Single N-channel Trench MOSFET 30V, 16.1A, 11.0m General Description Features The MDS1526 uses advanced MagnaChip's MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1526 is suitable for DC/DC converter and general purpose applications. VDS = 30V ID = 16.1A @VGS = 10V RDS(ON) < 11.0m @VGS = 10V < 16.4m @VGS = 4.5V 100% UIL Tested 100% Rg Tested D 6(D) 7(D) 8(D) 5(D) 2(S) G 4(G) 3(S) 1(S) S Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS 20 V o TC=25 C 16.1 o TC=70 C Continuous Drain Current (1) 12.8 ID o TA=25 C 11.3 TA=70oC 9.1(3) Pulsed Drain Current IDM 40 o Power Dissipation TC=25 C 5.0 TC=70oC 3.2 PD TA=25oC A W 2.5(3) TA=70oC Single Pulse Avalanche Energy A (3) 1.6(3) (2) Junction and Storage Temperature Range EAS 38 TJ, Tstg -55~150 Symbol Rating RJA 50 RJC 24.6 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case June. 2011. Version1.2 1 Unit o C/W MagnaChip Semiconductor Ltd. MDS1526 - Single N-Channel Trench MOSFET 30V MDS1526 Part Number Temp. Range MDS1526URH Package Packing Quantity Rohs Status SOIC-8 Tape & Reel 3000 units Halogen Free o -55~150 C Electrical Characteristics (TJ = 25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.9 2.7 Drain Cut-Off Current IDSS Gate Leakage Current IGSS VDS = 30V, VGS = 0V TJ=55oC VGS = 20V, VDS = 0V VGS = 10V, ID = 9A Drain-Source ON Resistance Forward Transconductance - 1 - 5 - - 0.1 - 9.6 11.0 - 13.9 16.0 VGS = 4.5V, ID = 7A - 13.7 16.4 VDS = 5V, ID = 9A - 22 - 7.8 11.2 14.5 3.8 5.4 7.0 - 2.0 - - 1.8 - 485 692 900 TJ=125oC RDS(ON) gfs - V A m S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 15.0V, ID = 9A, VGS = 10V VDS = 15.0V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss 47 68 88 Output Capacitance Coss 97 139 180 Turn-On Delay Time td(on) - 5.9 - Rise Time Turn-Off Delay Time tr td(off) VGS = 10V, VDS = 15.0V, ID = 9A, RG = 3.0 Fall Time tf Gate Resistance Rg f=1 MHz VSD IS = 9A, VGS = 0V nC pF - 4.0 - - 18.6 - - 8.6 - 0.5 1.7 3.0 - 0.83 1.1 V - 17.8 26.7 ns - 8.9 13.3 nC ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF = 9A, dl/dt = 100A/s Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. EAS is tested at starting Tj = 25, L = 0.1mH, IAS = 14.8A, VDD = 27V, VGS = 10V. 3. T < 10sec June. 2011. Version1.2 2 MagnaChip Semiconductor Ltd. MDS1526 - Single N-Channel Trench MOSFET 30V Ordering Information 18 3.5V Drain-Source On-Resistance [m] ID, Drain Current [A] 4.0V 4.5V 15 5.0V 8.0V VGS = 10V 10 3.0V 5 0 0.0 15 VGS = 4.5V 12 VGS = 10V 9 6 3 0 0.5 1.0 1.5 2.0 2.5 3.0 5 10 20 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 40 1.8 Notes : VGS=10V ID=9A 1.6 RDS(ON) [m ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 15 ID, Drain Current [A] VDS, Drain-Source Voltage [V] 1.4 1.2 1.0 ID = 9A 30 20 TA = 25 10 0.8 0.6 -50 0 -25 0 25 50 75 100 125 2 150 4 6 8 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 16 Notes : 1 10 IDR, Reverse Drain Current [A] ID, Drain Current [A] Notes : VDS = 5V 12 8 TA=25 4 VGS = 0V TA=25 0 10 10 -1 0 0 1 2 3 4 5 0.3 VGS, Gate-Source Voltage [V] 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-Drain voltage [V] Fig.5 Transfer Characteristics June. 2011. Version1.2 0.4 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDS1526 - Single N-Channel Trench MOSFET 30V 20 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Note : ID = 9A 900 Capacitance [pF] VGS, Gate-Source Voltage [V] 8 6 4 Ciss 600 300 Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 2 Crss 0 0 0 0 2 4 6 8 10 5 10 12 15 20 25 30 VDS, Drain-Source Voltage [V] Q G, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 25 Operation in This Area is Limited by R DS(on) 2 20 1 ms ID, Drain Current [A] ID, Drain Current [A] 10 10 ms 1 10 100 ms 1s 10s DC 0 10 15 10 5 Single Pulse TJ=Max rated TC=25 -1 10 0 25 10 -1 10 0 1 50 75 100 125 150 2 10 10 T C, Case Temperature [] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 2 Z JC, Thermal Response 10 D=0.5 1 10 0.2 0.1 0.05 0 10 0.02 0.01 single pulse -1 10 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve June. 2011. Version1.2 4 MagnaChip Semiconductor Ltd. MDS1526 - Single N-Channel Trench MOSFET 30V 1200 10 8 Leads, SOIC Dimensions are in millimeters unless otherwise specified DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. June. 2011. Version1.2 5 MagnaChip Semiconductor Ltd. MDS1526 - Single N-Channel Trench MOSFET 30V Physical Dimensions