June. 2011. Version1.2 MagnaChip Semiconductor Ltd.
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MDS1526 – Single N-Channel Trench MOSFET 30V
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (1)
TC=25oC
ID
16.1
A
TC=70oC 12.8
TA=25oC 11.3(3)
TA=70oC 9.1(3)
Pulsed Drain Current IDM 40 A
Power Dissipation
TC=25oC
PD
5.0
W
TC=70oC 3.2
TA=25oC 2.5(3)
TA=70oC 1.6(3)
Single Pulse Avalanche Energy (2) EAS 38 mJ
Junction and Storage Temperature Range TJ, Tstg -55~150 oC
Thermal Characteristics
Characteristics Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient (1) RθJA 50 oC/W
Thermal Resistance, Junction-to-Case RθJC 24.6
MDS1526
Single N-channel Trench MOSFET 30V, 16.1A, 11.0mΩ
Features
VDS = 30V
ID = 16.1A @VGS = 10V
RDS(ON)
< 11.0mΩ @VGS = 10V
< 16.4mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
General Description
The MDS1526 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDS1526 is suitable for DC/DC converter and
general purpose applications.
D
G
S
1(S)
2(S)
3(S)
4(G)
8(D)
7(D)
6(D) 5(D)
June. 2011. Version1.2 MagnaChip Semiconductor Ltd.
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MDS1526 – Single N-Channel Trench MOSFET 30V
Ordering Information
Part Number Temp. Range Package Packing Quantity Rohs Status
MDS1526URH -55~150oC SOIC-8 Tape & Reel 3000 units Halogen Free
Electrical Characteristics (T
J
=
25
o
C)
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - - V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.3 1.9 2.7
Drain Cut-Off Current IDSS VDS = 30V, VGS = 0V - - 1
µA
TJ=55oC - - 5
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
Drain-Source ON Resistance RDS(ON)
VGS = 10V, ID = 9A - 9.6 11.0
mΩ TJ=125oC - 13.9 16.0
VGS = 4.5V, ID = 7A - 13.7 16.4
Forward Transconductance gfs VDS = 5V, ID = 9A - 22 - S
Dynamic Characteristics
Total Gate Charge Qg(10V)
VDS = 15.0V, ID = 9A,
VGS = 10V
7.8 11.2 14.5
nC
Total Gate Charge Qg(4.5V) 3.8 5.4 7.0
Gate-Source Charge Qgs - 2.0 -
Gate-Drain Charge Qgd - 1.8 -
Input Capacitance Ciss
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
485 692 900
pF
Reverse Transfer Capacitance Crss 47 68 88
Output Capacitance Coss 97 139 180
Turn-On Delay Time td(on)
VGS = 10V, VDS = 15.0V,
ID = 9A, RG = 3.0Ω
- 5.9 -
ns
Rise Time tr - 4.0 -
Turn-Off Delay Time td(off) - 18.6 -
Fall Time tf - 8.6 -
Gate Resistance Rg f=1 MHz 0.5 1.7 3.0 Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 9A, VGS = 0V - 0.83 1.1 V
Body Diode Reverse Recovery Time trr IF = 9A, dl/dt = 100A/µs - 17.8 26.7 ns
Body Diode Reverse Recovery Charge Qrr - 8.9 13.3 nC
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 14.8A, VDD = 27V, VGS = 10V.
3. T < 10sec
June. 2011. Version1.2 MagnaChip Semiconductor Ltd.
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MDS1526 – Single N-Channel Trench MOSFET 30V
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On
-
Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On
-
Resistance Variation with
Temperature
Fi
g.4 On
-
Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VGS=10V
ID=9A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
2 4 6 8 10
0
10
20
30
40
Notes :※
ID = 9A
TA = 25℃
RDS(ON) [mΩ ],
Drain-Source On-Resistance
VGS, Gate to Source Volatge [V]
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
10-1
100
101
TA=25℃
Notes :※
VGS = 0V
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
0 1 2 3 4 5
0
4
8
12
16
VGS, Gate-Source Voltage [V]
TA=25℃
Notes :※
VDS = 5V
ID, Drain Current [A]
5 10 15 20
0
3
6
9
12
15
18
VGS = 10V
VGS = 4.5V
Drain-Source On-Resistance [mΩ]
ID, Drain Current [A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
5
10
15
20
8.0V
4.5V
3.5V
VGS = 10V
5.0V
4.0V
3.0V
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
June. 2011. Version1.2 MagnaChip Semiconductor Ltd.
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MDS1526 – Single N-Channel Trench MOSFET 30V
Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current
v
s.
Case Temperature
Fig.11 Transient Thermal Response
Curve
0 2 4 6 8 10 12
0
2
4
6
8
10
Note : I※D = 9A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
25 50 75 100 125 150
0
5
10
15
20
25
ID, Drain Current [A]
TC, Case Temperature [ ]℃
10-4 10-3 10-2 10-1 100101102103
10-2
10-1
100
101
102
Notes :※
Duty Factor, D=t1/t2
PEAK TJ = PDM
* Zθ JC
* Rθ JC
(t) + TC
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ JC
, Thermal Response
t1, Rectangular Pulse Duration [sec]
0 5 10 15 20 25 30
0
300
600
900
1200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;※
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
10-1 100101102
10-1
100
101
102
1 ms
1s
100 ms
DC
10 ms
10s
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max rated
TC=25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
June. 2011. Version1.2 MagnaChip Semiconductor Ltd.
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MDS1526 – Single N-Channel Trench MOSFET 30V
Physical Dimensions
8 Leads, SOIC
Dimensions are in millimeters unless otherwise specified
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.
