June. 2011. Version1.2 MagnaChip Semiconductor Ltd.
2
MDS1526 – Single N-Channel Trench MOSFET 30V
Part Number Temp. Range Package Packing Quantity Rohs Status
MDS1526URH -55~150oC SOIC-8 Tape & Reel 3000 units Halogen Free
Electrical Characteristics (T
J
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - - V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.3 1.9 2.7
Drain Cut-Off Current IDSS VDS = 30V, VGS = 0V - - 1
µA
TJ=55oC - - 5
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
Drain-Source ON Resistance RDS(ON)
VGS = 10V, ID = 9A - 9.6 11.0
mΩ TJ=125oC - 13.9 16.0
VGS = 4.5V, ID = 7A - 13.7 16.4
Forward Transconductance gfs VDS = 5V, ID = 9A - 22 - S
Dynamic Characteristics
Total Gate Charge Qg(10V)
VDS = 15.0V, ID = 9A,
VGS = 10V
7.8 11.2 14.5
nC
Total Gate Charge Qg(4.5V) 3.8 5.4 7.0
Gate-Source Charge Qgs - 2.0 -
Gate-Drain Charge Qgd - 1.8 -
Input Capacitance Ciss
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
485 692 900
pF
Reverse Transfer Capacitance Crss 47 68 88
Output Capacitance Coss 97 139 180
Turn-On Delay Time td(on)
VGS = 10V, VDS = 15.0V,
ID = 9A, RG = 3.0Ω
- 5.9 -
ns
Rise Time tr - 4.0 -
Turn-Off Delay Time td(off) - 18.6 -
Fall Time tf - 8.6 -
Gate Resistance Rg f=1 MHz 0.5 1.7 3.0 Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 9A, VGS = 0V - 0.83 1.1 V
Body Diode Reverse Recovery Time trr IF = 9A, dl/dt = 100A/µs - 17.8 26.7 ns
Body Diode Reverse Recovery Charge Qrr - 8.9 13.3 nC
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 14.8A, VDD = 27V, VGS = 10V.
3. T < 10sec