Features * Operating Voltage: 3.3V * Access Time: - 15 ns (AT60142F) * Very Low Power Consumption * * * * * * * * * - Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns - Standby: 3.3 mW (Typ) Wide Temperature Range: -55 to +125C TTL-Compatible Inputs and Outputs Asynchronous Designed on 0.25 m Radiation Hardened Process No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2@125C Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019 500 Mils Wide FP36 Package ESD Better than 4000V Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208 Description The AT60142F is a very low power CMOS static RAM organized as 524 288 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Rad Hard 512K x 8 Very Low Power CMOS SRAM AT60142F Utilizing an array of six transistors (6T) memory cells, the AT60142F combines an extremely low standby supply current (Typical value = 1 mA) with a fast access time at 15 ns or better over the full military temperature range. The high stability of the 6T cell provides excellent protection against soft errors due to noise. The AT60142F is processed according to the methods of the latest revision of the MIL PRF 38535 or ESCC 9000. It is produced on a radiation hardened 0.25 m CMOS process. 4408H-AERO-05/10 1 AT60142F Block Diagram Pin Configuration A0 A1 A2 A4 CS I/O1 I/O2 Vcc GND I/O3 I/O4 WE A5 A6 A7 A8 A9 36 - pin -Flatpack - 500 Mils A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 NC A18 A17 A16 A15 OE I/O8 I/O7 GND Vcc I/O6 I/O5 A14 A13 A12 A11 A10 N/C 2 4408H-AERO-05/10 Pin Description Table 1. Pin Names Name Description A0 - A18 Address Inputs I/O1 - I/O8 Data Input/Output CS Chip Select WE Write Enable OE Output Enable Vcc Power Supply GND Ground Table 2. Truth Table(1) CS WE OE Inputs/Outputs Mode H X X Z Deselect/ Power-down L H L Data Out Read L L X Data In Write L H H Z Output Disable Note: 3 1. L=low, H=high, X= L or H, Z=high impedance. AT60142F 4408H-AERO-05/10 AT60142F Electrical Characteristics Absolute Maximum Ratings* Supply Voltage to GND Potential: ....................... -0.5V + 4.6V *NOTE: Voltage range on any input: ...................... GND -0.5V to 4.6V Voltage range on any ouput: ..................... GND -0.5V to 4.6V Storage Temperature: ................................... -65C to + 150C Output Current from Output Pins: ................................ 20 mA Electrostatic Discharge Voltage: ............................... > 4000V (MIL STD 883D Method 3015.3) Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure between recommended DC operating and absolute maximum rating conditions for extended periods may affect device reliability. Military Operating Range Operating Voltage Operating Temperature 3.3 + 0.3V -55C to + 125C Military Recommended DC Operating Conditions Parameter Description Vcc Supply voltage GND Ground Min Typ Max Unit 3 3.3 3.6 V 0.0 0.0 0.0 V VIL Input low voltage GND - 0.3 0.0 0.8 V VIH Input high voltage 2.2 - VCC + 0.3 V Description Min Typ Max Unit Capacitance Parameter Note: Cin(1) Input capacitance - - 12 pF Cout(1) Output capacitance - - 12 pF 1. Guaranteed but not tested. 4 4408H-AERO-05/10 DC Parameters Parameter Minimum Typical Maximum Unit Input leakage current -1 - 1 A IOZ(1) Output leakage current -1 - 1 A VOL(2) Output low voltage - - 0.4 V VOH(3) Output high voltage 2.4 - - V IIX (1) Description 1. GND < VIN < VCC, GND < VOUT < VCC Output Disabled. 2. VCC min. IOL = 8 mA 3. VCC min. IOH = -4 mA. Consumption TAVAV/TAVAW Test Condition AT60142F-15 Unit Value Standby Supply Current - 2 mA max Standby Supply Current - 1.8 mA max Read Dynamic Operating Current 15 ns 25 ns 50 ns 1 s 180 150 75 10 mA max ICCOP(4) Write Dynamic Operating Current 15 ns 25 ns 50 ns 1 s 150 130 120 100 mA max Symbol Description ICCSB (1) ICCSB1 (2) ICCOP(3) 1. 2. 3. 4. 5 CS >VIH CS > VCC - 0.3V F = 1/TAVAV, Iout = 0 mA, WE = OE = VIH, VIN = GND/VCC, VCC max. F = 1/TAVAW, Iout = 0 mA, WE = VIL, OE = VIH , VIN = GND/VCC, VCC max. AT60142F 4408H-AERO-05/10 AT60142F Data Retention Mode Atmel CMOS RAM's are designed with battery backup in mind. Data retention voltage and supply current are guaranteed over temperature. The following rules insure data retention: 1. During data retention chip select CS must be held high within VCC to VCC -0.2V. 2. Output Enable (OE) should be held high to keep the RAM outputs high impedance, minimizing power dissipation. 3. During power-up and power-down transitions CS and OE must be kept between VCC + 0.3V and 70% of VCC. 4. The RAM can begin operation > tR ns after VCC reaches the minimum operation voltages (3V). Figure 1. Data Retention Timing Data Retention Characteristics Parameter Description Min Typ TA = 25C Max Unit VCCDR VCC for data retention 2.0 - - V tCDR Chip deselect to data retention time 0.0 - - ns tR Operation recovery time tAVAV - - ns ICCDR (2) Data retention current - 0.700 1.3 mA 1. 2. (1) TAVAV = Read cycle time. CS = VCC, VIN = GND/VCC. 6 4408H-AERO-05/10 AC Characteristics Temperature Range:................................................ -55 +125C Supply Voltage:........................................................ 3.3 +0.3V Input Pulse Levels: .................................................. GND to 3.0V Input Rise and Fall Times:....................................... 3ns (10 - 90%) Input and Output Timing Reference Levels: ............ 1.5V Output Loading IOL/IOH:............................................ See Figure 2 Figure 2. AC Test Loads Waveforms 7 AT60142F 4408H-AERO-05/10 AT60142F Write Cycle Symbol Parameter AT60142F-15 Unit Value TAVAW Write cycle time 15 ns min TAVWL Address set-up time 0 ns min TAVWH Address valid to end of write 8 ns min TDVWH Data set-up time 7 ns min TELWH CS low to write end 12 ns min TWLQZ Write low to high Z(1) 6 ns max TWLWH Write pulse width 8 ns min TWHAX Address hold from end of write 0 ns min TWHDX Data hold time 0 ns min TWHQX Write high to low Z(1) 3 ns min Notes: 1. Parameters guaranteed, not tested, with output loading 5 pF. (See "AC Test Loads Waveforms" on page 7.) Figure 3. Write Cycle 1. WE Controlled, OE High During Write E Figure 4. Write Cycle 2. WE Controlled, OE Low E 8 4408H-AERO-05/10 Figure 5. Write Cycle 3. CS Controlled(1) E Note: 9 The internal write time of the memory is defined by the overlap of CS Low and W LOW. Both signals must be activated to initiate a write and either signal can terminate a write by going in active mode. The data input setup and hold timing should be referenced to the active edge of the signal that terminates the write. Data out is high impedance if OE= VIH. AT60142F 4408H-AERO-05/10 AT60142F Read Cycle Symbol Parameter AT60142F-15 Unit Value TAVAV Read cycle time 15 ns min TAVQV Address access time 15 ns max TAVQX Address valid to low Z 5 ns min TELQV Chip-select access time 15 ns max TELQX CS low to low Z(1) 5 ns min TEHQZ CS high to high Z(1) 6 ns max TGLQV Output Enable access time 6 ns max TGLQX OE low to low Z(1) 2 ns min TGHQZ OE high to high Z (1) 5 ns max Note: 1. Parameters guaranteed, not tested, with output loading 5 pF. (See "AC Test Loads Waveforms" on page 7.) Figure 6. Read Cycle nb 1: Address Controlled (CS = OE = VIL, WE = VIH) Figure 7. Read Cycle nb 2: Chip Select Controlled (WE = VIH) 10 4408H-AERO-05/10 Ordering Information Part Number Temperature Range Speed Package Flow 25C 15 ns/3.3V FP36.5 grounded lid Engineering Samples AT60142F-DS15M-E 5962-0520802QYC -55 to +125C 15 ns/3.3V FP36.5 grounded lid QML Q 5962-0520802VYC -55 to +125C 15 ns/3.3V FP36.5 grounded lid QML V -55 to +125C 15 ns/3.3V FP36.5 grounded lid QML V RHA -55 to +125C 15 ns/3.3V FP36.5 grounded lid ESCC 5962R0520802VYC AT60142F-DS15-SCC (3) (1) 25C 15 ns/3.3V Die Engineering Samples -55 to +125C 15 ns/3.3V Die QML V 5962-0520802QXC -55 to +125C 15 ns/3.3V FP36.5 QML Q 5962-0520802VXC -55 to +125C 15 ns/3.3V FP36.5 QML V 5962R0520802VXC -55 to +125C 15 ns/3.3V FP36.5 QML V RHA 930105202 -55 to +125C 15 ns/3.3V FP36.5 ESCC AT60142F-DD15M-E AT60142F-DD15MSV(1) (2) Not recommended for new designs Note: 1. Contact Atmel for availability. 2. Will be replaced by SMD part number when available. 3. Will be replaced by ESCC part number when available. 11 AT60142F 4408H-AERO-05/10 AT60142F Package Drawings 36-lead Flat Pack (500 Mils) Notes: 1. package DC : lid is NOT connected to GROUND 2. package DS : lid is connected to GROUND 12 4408H-AERO-05/10 Document Revision History Changes from Rev. E to Rev. F 1. Split datasheet into two separate documents: removed AT60142FT from this document. Please refer to document 7726 on the Atmel web site. Changes from Rev. F to Rev. G 1. Suppression of version AT60142G 2. Update of "Absolute Maximum Ratings" section Changes from Rev. G to Rev. H 1. In "Features" section page 1 : - "MeV/mg/cm2" unit replaced by "MeV/mg/cm2@125C" 2. In "AC Characteristics" section page 7 : - "See figure 1" replaced by "See figure 2" 3. In "Ordering Information" section page 11 : - 13 All parts supplied in FP36.5 without gounded lid are not recommended for new designs. AT60142F 4408H-AERO-05/10 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Biometrics/Imaging/HiRel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00 Fax: (33) 4-76-58-34-80 Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 Literature Requests www.atmel.com/literature Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Atmel's Terms and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel's products are not authorized for use as critical components in life support devices or systems. (c)2007 Atmel Corporation. All rights reserved. Atmel (R) and combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of others. Printed on recycled paper. 4408H-AERO-05/10 /xM