DEVELOPMENT DATA This data sheet contains advance information and BYD77 SERIES specifications are subject to change without notice. piue binder, tab / EPITAXIAL AVALANCHE DIODES Rectifier diodes in hermetically sealed leadless SMID*-envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching characteristics and are capable of absorbing reverse transient energy (e.g. during flashover in a picture tube), These properties make the diodes very suitable for use in switched-mode power supplies and in general high-frequency circuits, where low conduction and switching losses are essential. QUICK REFERENCE DATA BYD77A B Cc D E F G Repetitive peak reverse voltage VRRM_ max. 50 | 100 | 150 | 200 | 250) 300 | 400 V Continuous reverse voltage VR max. 50 100 | 150 | 200 | 250 | 300 | 400 V Average forward current IF(Ay) max. 2 2 2 2 '1,85 | 1,85 |1,85 A Non-repetitive peak forward current lesm max. 25 25| 25 | 25) 25) 25| 25A Non-repetitive peak reverse energy ERsy max. 20 20| 20] 20; 20; 20; 20 mJ Reverse recovery time ter < 25 25} 25) 25] 50] 50) 50 ns MECHANICAL DATA Dimensions in mm Fig. 1 SOD-87. ~ 3,5+0,2 ~ + 0,3 7293596.1 1,9 @D1= +01 The diodes may be either type-branded or colour-coded. The coloured end indicates the cathode. * Surface-mounted implosion diode. g Mullard ) ( 1986 1 BYD77 SERIES RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) BYo77A | 8|C|O]E|F |G Repetitive peak reverse voltage Vrram max. 50 ; 100] 150) 200 | 250 | 300 | 400 Vv Continuous reverse voltage VR max. 50 | 100] 150 | 200 | 250; 300 | 400 V Average forward current square wave; 6 = 0,5 Ttp = 105 C lF(AV) max. 2 2 2 2 | 1,85 | 1,85 | 1,85 Tamb = 60 C; p.c.b. mounting Ie(ay) max. 0,85 | 0,85 0,85 |}0,85 | 08; 08| 0,8 Repetitive peak forward current lERM max. 15 15] 151 15! 131 131 13 A >> Non-repetitive peak forward current (t = 10 ms; half sine-wave) Tj = Tj max Prior to surge; with reapplied Varm lFSmM max. 25 A Non-repetitive peak reverse avalanche energy; with inductive load switched off: IR = 600 mA at Tj = 25 OC prior to surge ERsm max. 20 mJ IR = 400 mA at Tj = Tj max prior to surge ERSM max. 10 mJ Storage temperature Tstg 65 to + 175 oC Junction temperature Tj max. 175 oC THERMAL RESISTANCE Influence of mounting method 1, Thermal resistance from junction to tie-point Rthj-tp = 30 K/W 2. Thermal resistance from junction to ambient when mounted on a 1,5 mm thick epoxy-glass printed- circuit board; Cu-thickness > 40 pm; Fig 2. Rthj-a = 150 KW 50 4,5 ae 50 4 02,5 oll 1,25 7Z96389 Fig 2. Mounted on a printed-circuit board. 2 July 1986 ( Mullard g Epitaxial avalanche diodes BYD77 SERIES VEVELOUPMEN!I VDAIA CHARACTERISTICS Tj = 25 C unless otherwise specified BYD77A B Cc D E F G Reverse avalanche breakdown voltage IR =0,1mA ViBR)R > 55] 110! 165 | 220| 275 | 330 | 440 V Forward voltage* Ip = 1A; 7; = Tj max Ve < 0,74 | 0,74 | 0,74 | 0,74 | 0,83 .|0,83 }0,83 V IF=1A Ve < 0,95 | 0,95 | 0,95 | 0,95 | 1,05 | 1,05 | 1,05 Vv Reverse current VR = VRRMmax IR < 1 1 1 1 1 1 1 pA VR = VRRMmax: Tj = 165 oC IR < 100 | 100] 100 | 100} 100 | 100; 100 pA Reverse recovery time when switched from Ilr = 0,5 A tolRp =1A; measured at Ip = 0,25 A ter < 25| 25! 251 251: 50! 50] 50 ns 7Z94647 7294648 0 0,4 0,8 1,2 16 0 0,4 0,8 1,2 1,6 Ve CV} Ve tv} Fig. 3 BYD77A; B;C; D. Fig.4 BYD77E; F;G. Maximum forward voltage. Maximum forward voltage. Tj = 25 9C; Tj= 175 C, Tj =259C;---Tj= 175 9C, * Measured under pulse conditions to avoid excessive dissipation. @ M87-1106/RST Mullard ) [ 1986 3