AP09N20H/J Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Low On-resistance Fast Switching Characteristics BVDSS RDS(ON) ID D 200V 380m 8.6A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D The TO-252 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP09N20J) is available for lowprofile applications. S TO-252(H) G D S TO-251(J) Rating Units Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage V ID@TC=25 Continuous Drain Current, V GS @ 10V 30 8.6 ID@TC=100 Continuous Drain Current, V GS @ 10V 5.5 A 36 A 69 W 0.55 W/ 40 mJ 8.6 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation Linear Derating Factor 2 A EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Value Unit Rthj-c Symbol Thermal Resistance Junction-case Max. 1.8 /W Rthj-a Thermal Resistance Junction-ambient Max. 110 /W Parameter Data & specifications subject to change without notice 201112031 AP09N20H/J o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 200 - 0.24 - V V/ BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A - - 380 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=5A - 3.7 - S VDS=200V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=160V, VGS=0V - - 100 uA Gate-Source Leakage VGS= 30V - - 100 nA ID=8.6A - 23 37 nC o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 3 VGS=0V, ID=1mA Min. Qg Total Gate Charge Qgs Gate-Source Charge VDS=160V - 4 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 13 - nC 3 td(on) Turn-on Delay Time VDD=100V - 12 - ns tr Rise Time ID=8.6A - 74 - ns td(off) Turn-off Delay Time RG=10,VGS=10V - 36 - ns tf Fall Time RD=11.6 - 44 - ns Ciss Input Capacitance VGS=0V - 500 800 pF Coss Output Capacitance VDS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Min. Typ. IS=8.6A, VGS=0V - - 1.3 V Source-Drain Diode Symbol Parameter 3 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=8.6A, VGS=0V, - 225 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 2260 - nC Notes: 1.Pulse width limited by safe operating area. o 2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25 , IAS=8.6A. 3.Pulse width <300us , duty cycle <2%. AP09N20H/J 18 10 10V 8.0V T C =25 o C 16 8 12 ID , Drain Current (A) 14 ID , Drain Current (A) 10V 8.0V 7.0V T C =150 o C 7.0V 10 8 6 6 4 5.0V 4 2 5.0V V G =4.0V 2 V G =4.0V 0 0 0 2 4 6 8 10 0 12 2 4 6 8 10 12 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.8 3 2.4 I D =5A V GS =10V Normalized RDS(ON) Normalized BVDSS (V) 2 2 1 1.6 1.2 0.8 0.4 0 0 -50 0 50 100 T j , Junction Temperature ( o 150 -50 0 50 100 150 o C) T j , Junction Temperature ( C ) Fig 3. Normalized BV DSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature 5 7 6 4 VGS(th) (V) 5 IS(A) 4 3 o o T j =150 C T j =25 C 3 2 2 1 1 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP09N20H/J 15 f=1.0MHz 1000 Ciss V DS =100V V DS =120V V DS =160V 9 C (pF) VGS , Gate to Source Voltage (V) I D =8.6A 12 Coss 100 6 Crss 3 0 10 0 6 12 18 24 30 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (R thjc) 100 1ms 10 ID (A) 10ms 100ms 1s 1 T c =25 o C Single Pulse DC 0 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q