Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
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▼ Simple Drive Requirement BVDSS 200V
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▼ Low On-resistance RDS(ON) 380mΩ
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▼ Fast Switching Characteristics ID8.6A
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
W/℃
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-c Thermal Resistance Junction-case Max. 1.8 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W
Data & specifications subject to change without notice 201112031
Storage Temperature Range -55 to 150
36
69
Linear Derating Factor 0.55
8.6
5.5
Parameter Rating
200
AP09N20H/J
40
-55 to 150
Parameter
8.6
± 30
GDSTO-251(J)
GDSTO-252(H)
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial applications at power dissipation levels to approximately 50
watts. The through-hole version (AP09N20J) is available for low-
profile applications.
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 200 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.24 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A - - 380 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=5A - 3.7 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=200V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=160V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=--
nA
QgTotal Gate Charge3ID=8.6A - 23 37 nC
Qgs Gate-Source Charge VDS=160V - 4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 13 - nC
td(on) Turn-on Delay Time3VDD=100V - 12 - ns
trRise Time ID=8.6A - 74 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 36 - ns
tfFall Time RD=11.6Ω-44-ns
Ciss Input Capacitance VGS=0V - 500 800 pF
Coss Output Capacitance VDS=25V - 90 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage3IS=8.6A, VGS=0V - - 1.3 V
trr Reverse Recovery Time IS=8.6A, VGS=0V, - 225 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 2260 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=8.6A.
3.Pulse width <300us , duty cycle <2%.
AP09N20H/J
± 30V ±100
AP09N20H/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
0
1
2
3
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=5A
VGS =10V
0
2
4
6
8
10
12
14
16
18
024681012
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25 oC10V
8.0V
7.0V
5.0V
VG=4.0V
0
2
4
6
8
10
024681012
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150 oC10V
8.0V
7.0V
VG=4.0V
5.0V
0
1
2
3
4
5
6
7
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25 oCTj=150 oC
1
2
3
4
5
-50 0 50 100 150
Tj , Junction Temperature ( o C )
VGS(th) (V)
AP09N20H/J
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fi
g
10. Effective Transient Thermal Impedanc
e
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
10
100
1000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
0
3
6
9
12
15
0 6 12 18 24 30
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
VDS =100V
VDS =120V
VDS =160V
ID=8.6A
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Thermal Response (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
1
10
100
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25 oC
Single Pulse
1ms
10ms
100ms
1s
DC
