TGA4915-CP 7 W Ka Band Packaged Power Amplifier Key Features and Performance * * * * * * * Frequency Range: 26 - 31 GHz 38 dBm Typical Psat @ Pin =21 dBm 22 dB Nominal Gain 15 dB Typical Return Loss 0.25m pHEMT Technology Bias Conditions: Vd = 6V, Idq = 4.2 A Package Dimensions: 0.526 x 0.650 x 0.073 in Primary Applications * * Product Description Preliminary Measured Performance The TriQuint TGA4915-CP is a compact 7 Watt High Power Amplifier for Ka band applications. The part is designed using TriQuint's proven standard 0.25 um gate Power pHEMT production process. Bias Conditions: Vd=6 V Idq=4.2 A 40 39 38 Power (dBm) 37 36 35 Psat 34 P1dB 33 32 The part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals and point to point radio. 31 30 24 25 26 27 28 29 30 31 32 Gain (dB) Frequency (GHz) 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 Output Input 24 25 26 27 28 29 30 31 32 33 34 Frequency (GHz) Datasheet subject to change without notice. 1 TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Apr 2009 (c) Rev A Return Loss (dB) The TGA4915-CP provides a nominal 38 dBm of output power at an input power level of 21 dBm with a small signal gain of 22 dB. Satellite Ground Terminals Point to Point TGA4915-CP TABLE I MAXIMUM RATINGS 1/ Symbol Parameter + Positive Supply Voltage - Negative Supply Voltage Range V V + I Value 8V -3V TO 0V Positive Supply Current (Quiescent) 8A | IG | Gate Supply Current 124 mA PIN Input Continuous Wave Power 27 dBm PD Power Dissipation TCH Operating Channel Temperature 200 C TM Mounting Temperature (30 Seconds) 210 C TSTG Notes 50 W 2/ -65 to 150 C Storage Temperature 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and/or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Junction operating temperature will directly affect the device median lifetime. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. . 2 TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Apr 2009 (c) Rev A TGA4915-CP TABLE II RF CHARACTERIZATION TABLE (TA = 25 C, Nominal) (Vd = 6 V, Id = 4.2 A) SYMBOL PARAMETER TEST CONDITION TYPICAL UNITS Gain Small Signal Gain F = 26-31 GHz 22 dB IRL Input Return Loss F = 26-31 GHz 15 dB ORL Output Return Loss F = 26-31 GHz 15 dB PWR Output Power @ P1dB F = 26-31 GHz 38 dBm 3 TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Apr 2009 (c) Rev A TGA4915-CP TABLE III THERMAL INFORMATION Parameter Test Conditions TCH (C) JC (C/W) Tm (hours) JC Thermal Resistance (Channel to Backside of Package) VD = 6 V ID = 4.2 A PDISS = 25.2 W 128 2.3 7.4 E+6 JC Thermal Resistance (Channel to Backside of Package) Vd = 8 V Id = 7.1 A @ Psat Pdiss = 50 W Pout = 7 W (RF) 200 2.3 2.3 E+4 . Note: Carrier at 85 C baseplate temperature. Worst case is at saturated output power when DC power consumption rises to 57 W with 7 W RF power delivered to the load. Power dissipated is 50 W and the temperature rise in the channel is 115 C. Median Lifetime (Tm) vs. Channel Temperature 1.E+13 Median Lifetime (Hours) 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 FET3 1.E+04 25 50 75 100 125 150 175 200 Channel Temperature ( C) 4 TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Apr 2009 (c) Rev A TGA4915-CP Measured Fixtured Data 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 Output Input 24 25 26 27 28 29 30 31 32 33 Return Loss (dB) Gain (dB) Bias Conditions: Vd = 6 V, Id = 4.2 A 34 Frequency (GHz) 40 39 Power (dBm) 38 37 36 35 Psat 34 P1dB 33 32 31 30 24 25 26 27 28 29 30 31 32 Frequency (GHz) 5 TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Apr 2009 (c) Rev A TGA4915-CP Measured Fixtured Data Bias Conditions: Vd = 6 V, Id = 4.2 A 40 Output Power (dBm) & Gain (dB) 36 32 28 24 20 16 12 8 4 0 -10 -5 0 5 10 Input Power (dBm) 15 20 25 25GHz_Power 25GHz_Gain 27GHz_Power 27GHz_Gain 29GHz_Power 29GHz_Gain 31GHz_Power 31GHz_Gain 4 3.6 16 Ids, Top Ids, Lower PAE 3.4 Ids(A) 18 14 3.2 12 3 10 2.8 8 2.6 6 2.4 4 2.2 2 2 0 -10 -5 0 5 10 15 20 PAE (%) 3.8 20 @ 30 GHz 25 Pin(dBm) 6 TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Apr 2009 (c) Rev A TGA4915-CP Package Pinout Diagram 2 3 4 VG1 VD1 VD2 1 RF IN TGA4915-CP 5 RF OUT 8 7 6 VG2 VD3 VD4 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Apr 2009 (c) Rev A TGA4915-CP Mechanical Drawing 2 3 0.650 4 0.582 0.504 Top View 1 0.349 0.325 0.301 5 TGA4915-CP 0.349 0.325 0.301 0.147 0.073 +/- 0.005 Side View 0.333 0.526 6 0.458 7 0.391 8 0.263 0.135 0.068 0.000 0.000 0.194 4X O0.078 0.003 1.8542 .005 LID SUBSTRATE STACK . 0.000 Dimensioned in inches 0.8153 0.0028/ 0.0024 0.032 +0.003/-0.002 0.0000 DIMENSIONS IN INCHES GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Apr 2009 (c) Rev A TGA4915-CP Assembly of a TGA4915-CP into a Module Manual Assembly for Prototypes 1. Clean the module with Acetone. Rinse with alcohol and DI water. Allow the module to fully dry. 2. To improve the thermal and RF performance, we recommend attaching a heatsink to the bottom of the package. If the TGA4915-CP is mounted to the heatsink with mounting screws, we recommend an indium shim or other compliant material be inserted between the TGA4915-CP and the heatsink to reduce thermal contact resistance due to air gaps. The TGA4915-CP may also be attached to the heatsink using SN63 solder or any other Tin/Lead solder. The TGA4915-CP may also be mounted with DieMat DM6030HK conductive epoxy or similar thermally and electrically conductive epoxy. 3. The DC and RF interconnects may be gold bondwires or gold ribbons. The RF interconnects should be as short as possible. A minimum of two 1 mil wires are recommended for the RF Input, RF Output, Vg, and Vd1 and Vd3. Six bondwires are recommended for Vd2 and Vd4. ORDERING INFORMATION PART PACKAGE STYLE TGA4915-CP CARRIER PLATE 9 TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Apr 2009 (c) Rev A