GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFOR M ANC E CH ARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
2224-6L
6 Watts, 22 Volts, Class C
Microwave 2200-2400 MHz
GENERAL DESCRIPTION
The 2224-6L is a COMMON BASE transistor capable of providing 6 Watts,
Class C output power over the band 2200-2400 MHz. The transistor includes
input prematching for full Broadband capability. Gold metalization and
diffused ballasting are used to provide high reliability and supreme
ruggedn ess. The transist or uses a full y hermetic High Temperatu r e Solder
Sealed package.
CASE OUTLINE
55LV STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 22 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 40 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 1.25 Amps
Maximum Temperatu res
Storage Temperature - 40 to + 200 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 2200-2400 MHz
Vcc = 22 Volts
Pout = 6.0 Watts
6.0
7.0 40
1.2
10:1
Watts
Watts
dB
%
BVces
BVebo
Hfe
Cob
θ
jc
Collector to Emitter Breakdo wn
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
Ic = 10 mA
Ie = 5 mA
Vce = 5 V, Ic = 1 A
Vcb = 22 F = 1 MHz
Tc = 25 C
o
40
3.5
20 7 120
8.0
Volts
Volts
pF
C/W
o
Initial Issue December 15, 1994
2224-6L
August 1996
