Preliminary data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
September 2010 Doc ID 17158 Rev 3 1/12
12
STAC4932F
RF power transistors
HF/VHF/UHF N-channel MOSFETs
Features
■Excellent thermal stability
■Common source push-pull configuration
■POUT = 1000 W min. (1200 W typ.) with 26 dB
gain @ 123 MHz
■Pulse conditions: 1 msec - 10%
■In compliance with the 2002/95/EC
European directive
■ST air cavity packaging technology - STAC®
package
Description
The STAC4932F is a N-channel MOS field-effect
RF power transistor. It is intended for 100 V pulse
applications up to 250 MHz. This device is
suitable for use in industrial, scientific and medical
applications.
The STAC4932B benefits from the latest
generation of efficient, patent-pending package
technology, otherwise known as STAC®.
Figure 1. Pin connection
STAC244F
Air cavity
1. Drain
2. Gate 3. Source
(Bottom side)
1
1
2
23
Table 1. Device summary
Order code Marking Package Packaging
STAC4932F STAC4932F STAC244F Plastic tray
www.st.com
Contents STAC4932F
2/12 Doc ID 17158 Rev 3
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STAC4932F Electrical data
Doc ID 17158 Rev 3 3/12
1 Electrical data
1.1 Maximum ratings
1.2 Thermal data
Table 2. Absolute maximum ratings (TCASE = 25°C)
Symbol Parameter Value Unit
V(BR)DSS(1)
1. TJ = 150 °C
Drain source voltage 200 V
VDGR Drain-gate voltage (RGS = 1 MΩ)200V
VGS Gate-source voltage ±20 V
TJMax. operating junction temperature 200 °C
TSTG Storage temperature -65 to +150 °C
Table 3. Thermal data (1 msec - 10%)
Symbol Parameter Value Unit
RthJC Junction - case thermal resistance 0.075 °C/W
Electrical characteristics STAC4932F
4/12 Doc ID 17158 Rev 3
2 Electrical characteristics
TCASE = +25 °C
2.1 Static
2.2 Dynamic
Table 4. Static (per side)
Symbol Test conditions Min. Typ. Max. Unit
V(BR)DSS(1)
1. TJ = 150 °C
VGS = 0 V IDS = 100 mA 200 250 V
IDSS VGS = 0 V VDS = 100 V 1 mA
IGSS VGS = 20 V VDS = 0 V 250 nA
VTH ID = 250 mA 2.0 4.0 V
VDS(ON) VGS = 10 V ID = 10 A 3.6 V
GFS VDS = 10 V ID = 2.5 A 6 S
CISS VGS = 0 V VDS = 100 V f = 1 MHz 570 pF
COSS VGS = 0 V VDS = 100 V f = 1 MHz 134 pF
CRSS VGS = 0 V VDS = 100 V f = 1 MHz 8 pF
Table 5. Pulse / 1 mec - 10 %
Symbol Test conditions Min. Typ. Max. Unit
POUT VDD = 100 V, IDQ = 2 x 250 mA, f = 123 MHz 1000 1200 - W
hDVDD = 100 V, IDQ = 2 x 250 mA, POUT = 1000 W,
f = 123 MHz 60 - %
Gain VDD = 100 V, IDQ = 2 x 250 mA, POUT = 1000 W,
f = 123 MHz 26 - dB
STAC4932F Impedance
Doc ID 17158 Rev 3 5/12
3 Impedance
Figure 2. Current conventions
Note: Measured gate to gate and drain to drain, respectively.
Table 6. Impedance data
Freq. (MHz) ZIN (Ω)Z
DL(Ω)
123 MHz (Pulse) TBD TBD
Typical performances STAC4932F
6/12 Doc ID 17158 Rev 3
4 Typical performances
Figure 3. Maximum safe operating area
Figure 4. Transient thermal impedance
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STAC4932F Typical performances
Doc ID 17158 Rev 3 7/12
Figure 5. Transient thermal model
Figure 6. Power gain vs. output power
#
#
# &
#
#
# &
#
#
# &
#
#
# &
2
2
2 /HM
2
2
2 /HM
2
2
2 /HM
2
2
2 /HM
!-V
12
14
16
18
20
22
24
26
28
30
0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300
Power Gain (dB)
Output Power (watts)
100V 90V
AM06084v1
Freq = 123 MHz
Idq = 2x 100mA
Pulse width = 1msec
Duty cycle = 10%
Typical performances STAC4932F
8/12 Doc ID 17158 Rev 3
Figure 7. Efficiency vs. output power
0
10
20
30
40
50
60
70
80
0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300
Efficiency (%)
Output Power (watts)
100V 90V
Freq = 123 MHz
Idq = 2x 100mA
Pulse width = 1msec
Duty cycle = 10%
AM06085v1
STAC4932F Package mechanical data
Doc ID 17158 Rev 3 9/12
5 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Table 7. STAC244F package dimensions
Dim.
mm. Inch
Min Max Min Max
A 5.10 5.59 200 220
A1 4.32 4.83 170 190
B 4.32 5.33 170 210
C 9.65 9.91 380 390
D 19.61 20.02 772 788
E 20.45 20.70 805 815
F 0.08 1.15 0.003 0.006
G 0.89 1.14 0.035 0.045
H 1.45 1.70 0.057 0.067
I 3.18 4.32 0.125 0.170
J 9.27 9.53 0.365 0.375
Package mechanical data STAC4932F
10/12 Doc ID 17158 Rev 3
Figure 8. Package dimensions
!-V
STAC4932F
12/12 Doc ID 17158 Rev 3
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