DMP510DL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits VDSS RDS(ON) max -50V 10 @ VGS = -5V ID TA = +25C -180mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability ideal for high-efficiency power management applications. Applications Mechanical Data Case: SOT23 Case Material: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) General Purpose Interfacing Switch Power Management Functions Analog Switch D SOT23 D G S G S Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number DMP510DL-7 DMP510DL-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 DMP510DL Document number: DS38183 Rev. 1 - 2 Mar 3 YM 51D 51D = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) Y or Y = Year (ex: C = 2015) M = Month (ex: 9 = September) 2017 E Apr 4 2018 F May 5 Jun 6 1 of 6 www.diodes.com 2019 G Jul 7 2020 H Aug 8 Sep 9 2021 I Oct O 2022 J Nov N Dec D September 2015 (c) Diodes Incorporated DMP510DL Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Continuous Drain Current (Note 6) VGS = -5V TA = +25C TA = +70C ID IS IDM Value -50 30 -180 -130 -0.5 -1.2 Units V V Value 310 405 500 251 -55 to +150 Units mW C/W mW C/W C mA A A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Electrical Characteristics Steady State (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Steady State Symbol PD RJA PD RJA TJ, TSTG Symbol Min Typ Max Unit BVDSS IDSS IGSS -50 -1 100 V A nA VGS = 0V, ID = -250A VDS = -50V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS (ON) gFS -0.8 0.25 -2.0 10 V S VDS = VGS, ID = -1mA VGS = -5V, ID = -0.1A VDS = -25V, ID = -0.1A Ciss Coss Crss 24.6 4.8 2.8 2.8 2.6 11.1 7.2 pF pF pF ns ns ns ns tD(ON) tR tD(OFF) tF Test Condition VDS = -25V, VGS = 0V, f = 1.0MHz VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1" x 1" FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP510DL Document number: DS38183 Rev. 1 - 2 2 of 6 www.diodes.com September 2015 (c) Diodes Incorporated DMP510DL 1.0 0.6 VGS = -10V VDS = -5V VGS = -5.0V 0.8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.9 0.7 0.6 VGS=-4.0V 0.5 0.4 VGS = -3.0V 0.3 0.2 VGS = -2.5V 0.1 0.5 -55 25 0.4 85 150 0.3 0.2 0.1 VGS = -2.0V 0.0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 VGS = -4.5V 3 VGS = -10V 2 1 0 0 0.1 0.2 0.3 0.4 1.5 2 2.5 3 3.5 4 4.5 5 Figure 2. Typical Transfer Characteristic 5 4 1 VGS, GATE-SOURCE VOLTAGE (V) 0.5 0.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 10 9 8 7 6 5 4 ID = -100mA 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage Figure 4. Typical Transfer Characteristic 2 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 125 150 VGS = -10V 4 125 85 3 25 2 -55 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMP510DL Document number: DS38183 Rev. 1 - 2 3 of 6 www.diodes.com 1.8 VGS = -10V, ID = -200mA 1.6 1.4 1.2 VGS = -4.5V, ID = -50mA 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Temperature September 2015 (c) Diodes Incorporated 6 VGS(TH), GATE THERSHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMP510DL 5 VGS = -4.5V, ID = -50mA 4 3 VGS = -10V, ID = -200mA 2 1 0 -50 -25 0 25 50 75 100 125 2 1.8 ID = -1mA 1.6 1.4 ID = -250A 1.2 1 150 -50 -25 TJ, JUNCTION TEMPERATURE () 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs. Ambient Temperature 0.6 100 CT, JUNCTION CAPACITANCE (pF) VGS = 0V 0.5 IS, SOURCE CURRENT (A) 0 0.4 0.3 TA = 85oC 0.2 TA = 125oC TA = 25oC TA = 150oC 0.1 f=1MHz Ciss 10 Coss Crss TA = -55oC 1 0 0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance 10 ID, DRAIN CURRENT (A) RDS(ON) Limited PW =100s PW =1ms 1 PW =10ms 0.1 PW =100ms PW =1s 0.01 TJ(Max) = 150 TC = 25 Single Pulse DUT on 1*MRP Board VGS= 10V PW =10s DC 0.001 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. SOA, Safe Operation Area DMP510DL Document number: DS38183 Rev. 1 - 2 4 of 6 www.diodes.com September 2015 (c) Diodes Incorporated DMP510DL r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RJA(t) = r(t) * RJA RJA = 404/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 12. Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. All 7 H K1 GAUGE PLANE 0.25 J K a M A L1 L C B SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 8 All Dimensions in mm D G F Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMP510DL Document number: DS38183 Rev. 1 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com September 2015 (c) Diodes Incorporated DMP510DL IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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