DMP510DL
Document number: DS38183 Rev. 1 - 2
1 of 6
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September 2015
© Diodes Incorporated
DMP510DL
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
VDSS
RDS(ON) max
ID
TA = +25°C
-50V
10Ω @ VGS = -5V
-180mA
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Ordering Information (Note 4)
Part Number
Case
Packaging
DMP510DL-7
SOT23
3,000/Tape & Reel
DMP510DL-13
SOT23
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
Code
C
D
E
F
G
H
I
J
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT23
Top View
Equivalent Circuit
Top View
D
GS
e3
D
S
G
51D = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y or Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
51D
YM
DMP510DL
Document number: DS38183 Rev. 1 - 2
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September 2015
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DMP510DL
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-50
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current (Note 6) VGS = -5V
Steady
State
TA = +25°C
TA = +70°C
ID
-180
-130
mA
Maximum Continuous Body Diode Forward Current (Note 6)
IS
-0.5
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
-1.2
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
PD
310
mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
405
°C/W
Total Power Dissipation (Note 6)
PD
500
mW
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
251
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-50
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS = -50V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
-0.8
-2.0
V
VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance
RDS (ON)
10
Ω
VGS = -5V, ID = -0.1A
Forward Transconductance
gFS
0.25
S
VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
24.6
pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
4.8
pF
Reverse Transfer Capacitance
Crss
2.8
pF
Turn-On Delay Time
tD(ON)
2.8
ns
VDD = -30V, ID = -0.27A,
RGEN = 50Ω, VGS = -10V
Turn-On Rise Time
tR

2.6

ns
Turn-Off Delay Time
tD(OFF)
11.1
ns
Turn-Off Fall Time
tF

7.2

ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP510DL
Document number: DS38183 Rev. 1 - 2
3 of 6
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September 2015
© Diodes Incorporated
DMP510DL
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS = -2.5V
VGS = -3.0V
VGS = -10V
VGS=-4.0V
VGS = -5.0V
VGS = -2.0V
0
1
2
3
4
5
0 0.1 0.2 0.3 0.4 0.5 0.6
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
VGS = -10V
VGS = -4.5V
0
1
2
3
4
5
6
7
8
9
10
0 2 4 6 8 10 12 14 16 18 20
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
ID = -100mA
0
1
2
3
4
5
0 0.1 0.2 0.3 0.4 0.5 0.6
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
-55℃
25℃
85℃
150℃
125℃
VGS = -10V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
VGS = -4.5V, ID = -50mA
VGS = -10V, ID = -200mA
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
VDS = -5V
125℃
-55℃
25℃
85℃
150℃
DMP510DL
Document number: DS38183 Rev. 1 - 2
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September 2015
© Diodes Incorporated
DMP510DL
0
1
2
3
4
5
6
-50 -25 0 25 50 75 100 125 150
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
VGS = -4.5V, ID = -50mA
VGS = -10V, ID = -200mA
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.3 0.6 0.9 1.2 1.5
IS, SOURCE CURRENT (A)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
TA = 125oC TA = 85oC
TA = 25oC
TA = -55oC
VGS = 0V
TA = 150oC
1
10
100
0 5 10 15 20 25 30 35 40
CT, JUNCTION CAPACITANCE (pF)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
Crss
Coss
Ciss
0.001
0.01
0.1
1
10
0.1 1 10 100
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. SOA, Safe Operation Area
PW =10s
PW =10ms
PW =100µs
DC
RDS(ON) Limited
PW =1ms
PW =100ms
TJ(Max) = 150℃ TC = 25℃
Single Pulse
DUT on 1*MRP Board
VGS= 10V
PW =1s
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
VGS(TH), GATE THERSHOLD VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Ambient
Temperature
ID = -250μA
ID = -1mA
DMP510DL
Document number: DS38183 Rev. 1 - 2
5 of 6
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September 2015
© Diodes Incorporated
DMP510DL
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIME (sec)
Figure 12. Transient Thermal Resistance
D=Single Pulse
D=0.005
D=0.01
D=0.02
D=0.05
D=0.1
D=0.3
D=0.5 D=0.9
RθJA(t) = r(t) * RθJA
RθJA = 404℃/W
Duty Cycle, D = t1 / t2
D=0.7
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110

8°
All Dimensions in mm
Dimensions
Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
XE
Y
C
Z
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
DMP510DL
Document number: DS38183 Rev. 1 - 2
6 of 6
www.diodes.com
September 2015
© Diodes Incorporated
DMP510DL
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