X02xxxN (R) SENSITIVE GATE SCR FEATURES IT(RMS) = 1.4A VDRM = 200V to 800V Low IGT < 200 A A K A G DESCRIPTION The X02xxxN series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose high volume applications using surface mount technology. SOT223 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) * IT(AV) * ITSM I2t Parameter RMS on-state current (180 conduction angle) Mean on-state current (180 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Value Unit Ttab= 90C 1.4 A Ta=75C 1.0 A Ttab= 90C 0.9 A Ta=75C 0.64 A tp = 8.3 ms 25 A tp = 10 ms 22.5 A tp = 10 ms 2.5 A2s 30 A/s - 40, + 150 - 40, + 125 C 260 C dI/dt Critical rate of rise of on-state current diG /dt = 0.1 A/s. IG = 10 mA Tstg Tj Storage and operating junction temperature range Tl Maximum lead temperature for soldering during 10s * : With 5cm2 copper (e=35m) surface under tab. Symbol VDRM VRRM Voltage Parameter Repetitive peak off-state voltage Tj = 125C RGK = 1K May 1998 Ed: 1A Unit B D M N 200 400 600 800 V 1/5 X02xxxN THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient * 60 C/W Rth(j-t) Junction to tab for DC 25 C/W * : With 5cm2 copper (e=35m) surface under tab. GATE CHARACTERISTICS (maximum values) PG (AV)= 0.2 W PGM = 3 W (tp = 20 s) IGM = 1.2 A (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol Sensitivity Test Conditions 02 IGT VD=12V (DC) RL=140 Tj= 25C MIN MAX 200 Unit 03 05 20 20 200 50 VGT VD=12V (DC) RL=140 Tj= 25C MAX 0.8 V VGD VD=VDRM RL=3.3k RGK = 1 K Tj= 125C MIN 0.1 V IRG =10A Tj= 25C MIN 8 V tgd VD=VDRM ITM= 3 x IT(AV) dIG/dt = 0.1A/s IG = 10mA Tj= 25C TYP 0.5 s IH IT= 50mA RGK = 1 K Tj= 25C MAX 5 mA IL IG=1mA RGK = 1 K Tj= 25C MAX 6 mA VTM ITM= 2.8A tp= 380s Tj= 25C MAX 1.5 V IDRM IRRM VD = VDRM RGK = 1 K VR = VRRM Tj= 25C MAX 5 A Tj= 110C MAX 200 A dV/dt VD=67%VDRM RGK = 1 K Tj= 110C TYP tq ITM= 3 x IT(AV) VR=35V dI/dt=10A/s tp=100s dV/dt=2V/s VD= 67%VDRM RGK = 1 K Tj= 110C MAX VRGM 15 20 15 100 ORDERING INFORMATION X 02 03 CURRENT M N PACKAGE : N = SOT223 SCR TOP GLASS 2/5 A SENSITIVITY VOLTAGE V/s s X02xxxN Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Ttab). Ttab (o C) -85 P (W) 1.4 P (W) 1.4 360 O Rth(j-t) 1.2 1.2 DC 1.0 = 180 0.8 = 120 0.6 = 90 0.4 = 60 0.2 0.2 0.4 0.6 Rth(j-a) 0.8 o -105 0.6 o o 0.4 = 30 o 0.0 0.0 1.0 1.2 -115 0.2 I T(AV)(A) 0.8 -95 1.0 o o Tamb ( C) 1.4 Fig.3 : Average on-state current versus tab temperature. 0.0 0 20 40 60 80 100 -125 140 120 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) I T(AV) (A) 1.00 1.6 DC 1.4 1.2 1.0 0.8 0.10 o = 180 0.6 Standard foot print , e(Cu)=35 m 0.4 0.2 o tp(s) Ttab ( C) 0.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] Ih[Tj=25 o C] 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 25 o 10.0 9.0 Tj initial = 25 C 20 8.0 7.0 15 6.0 Igt 5.0 10 4.0 3.0 2.0 5 Ih 1.0 0.0 -40 Number of cycles Tj(oC) -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 3/5 X02xxxN Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). I TSM (A). I2 t (A2 s) I TM (A) 100 100 Tj initial = 25oC Tj initial o 25 C I TSM 10 10 Tj max Tj max Vto =1.05V Rt =0.150 1 I2 t VTM (V) tp(ms) 1 1 4/5 10 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 X02xxxN PACKAGE MECHANICAL DATA SOT223 (Plastic) DIMENSIONS V1 REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. t A C V A1 B1 V2 e1 D B H E e Weight : 0.11 g FOOT PRINT A1 S O A A1 B B1 C D e e1 E H O S t V V1 V2 1.50 0.02 2.95 0.65 0.25 6.30 1.70 0.10 3.15 0.85 0.35 6.70 2.3 4.6 3.30 6.70 0.63 0.85 1.10 0.059 0.001 0.090 0.026 0.010 0.248 0.067 0.004 0.124 0.033 0.014 0.264 0.091 0.181 3.70 0.130 0.146 7.30 0.264 0.287 0.65 0.67 0.025 0.026 0.026 1.05 0.033 0.041 1.30 0.043 0.051 10 max 10 min 16max 10 min 16max MARKING Type Marking X0202BN X2B X0202DN X2D X0202MN X2M X0202NN X2N X0203BN X3B X0203DN X3D X0203MN X3M X0203NN X3N X0205BN X5B X0205DN X5D X0205MN X0205NN X5M X5N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. 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