Application and design manual
for High Performance RF products
May 2010
Date of release: May 2010
Document order number: 9397 750 16881
Printed in the Netherlands
© 2010 NXP B.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner. The information presented in this document does not form part of any quotation or contract,
is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
RF Manual 14th edition
RF Manual 14th edition
4NXP Semiconductors RF Manual 14th edition
NXP’s RF Manual makes
design work much easier
High Performance RF for the most demanding applications
NXP’s RF Manual – one of the most important reference tools on the market for
today’s RF designers – features our complete range of RF products, from low to
high power signal conditioning & high speed data converters.
What’s new?
This RF Manual features new applications, such as: point-to-point communication, radar, VSAT, MoCA
(Multimedia over Coax Alliance), NIM (Network Interface Module for TV reception), Digital Satellite Set-top-box
RF (Plasma) lighting, medical imaging, microwave furnaces and Mobile platforms. And we describe thoroughly new
developments in our main technologies SiGe:C QUBiC and LDMOS.
New products families have been added to our broad portfolio, like: Quad pin diodes, 6th and 7th generation SiGe:C
wideband transistors, variable gain amplifiers, LNA's for wireless infrastructures, LNA’s and MOSFETs for STB and a
full line-up of high speed converters. And of course the latest additions and improvements are included: GPS LNA’s,
medium power amplifiers, LO generators and CATV modules.
Our base station offering has grown extensively by e.g. a comprehensive set of best in class Doherty amplifier designs,
a broad selection of medium power, variable gain and low noise amplifiers and our JESD204A-compliant, high speed
DACs and ADCs.
Last but not least, we expanded our cross reference list with 40% to over 1.200 items.
A strong foundation in RF
Shipping billions of RF products annually, NXP is a true industry leader in high performance RF. Our RF small signal
products are widely installed in satellites, cellular base stations, mobile devices, cars, TV tuners and CATV. We’re a
leader in high power RF for cellular infrastructure, broadcast/ISM and Radar applications. With our new, serialized
signal processing architectures with JESD204A-compliant high-speed converters, we are enabling a transition to more
compact, higher performance systems.
Our IP extends far beyond our packaged products to our patented high performance processes. From high-power
LDMOS for power amplifiers, CMOS processes for our high-speed converters, and the most advanced SiGe:C (QUBiC4)
for RF small signal transistors, MMICs and ICs. Our in-house process and technology portfolio sets us apart.
What’s more, producing over 65 million units per day, we control our front- and back-end manufacturing quality and cost
structures with internal 8-inch IC fabs in the Netherlands and Singapore and assembly plants in Thailand, Taiwan and
China. Our processses are all AEC100 certified for supply into the most quality-conscious customers and applications.
5NXP Semiconductors RF Manual 14th edition
NXP’s firsts in RF
1963 – First transistors and diodes on 0.75 inch wafers
1964 – First RF wideband transistor with 1.5 GHz max
1970 – BFR90, a 5 GHz RF wideband transistor
1978 – BFQ33, a 14 GHz RF wideband transistor
1989 – Output matching in common emitter base station transistors
1992 – Highest power broadcast bipolar devices
1996 – Highest performance 2 GHz LDMOS
2004 – Gen5 LDMOS which becomes the industry’s most advanced process for power amplifiers
2006 – Fully integrated Doherty transistors
2007 – Industry’s first fully integrated, silicon-based IC solution for satellite: TFF1004HN
2008 – High speed data converters based on JESD204A standard
2009 – 1kW single transistor (BLF578) power amplifier for FM radio (88 to 108 MHz)
2009 – State-of-the-art, next generation SiGe:C BiCMOS QUBiC4Xi technology
“I’m proud to present the latest edition of our RF Manual. It covers NXP’s entire range of RF products in one comprehensive manual,
and I’m convinced that you’ll find the 14th edition even more useful in your daily design work.”
Kind regards,
John Croteau
Sr. Vice President & General Manager
Business Line High Performance RF
RF Manual web page
www.nxp.com/rfmanual
6NXP Semiconductors RF Manual 14th edition
Contents
1.1 Mobile Communication Infrastructure ________________________________________________________________ 9
1.1.1 Base stations (all cellular standards and frequencies) _____________________________________________ 9
1.1.2 Point-to-point _______________________________________________________________________________ 12
1.2 Microwave & mmWave ____________________________________________________________________________ 14
1.2.1 VSAT _______________________________________________________________________________________ 14
1.2.2 Microwave products for Avionics, L- and S-band Radar applications _______________________________ 16
1.3 Fixed Communication Infrastructure ________________________________________________________________ 18
1.3.1 CATV optical (optical node with multiple out-ports) _____________________________________________ 18
1.3.2 CATV electrical (line extenders) _______________________________________________________________ 19
1.3.3 Broadcast / ISM (industrial, scientific & medical) ________________________________________________ 20
1.4 TV, NIM (STB) and Satellite_________________________________________________________________________ 21
1.4.1 Network interface module (NIM) for TV reception _______________________________________________ 21
1.4.2 Basic TV tuner _______________________________________________________________________________ 23
1.4.3 MoCA (Multimedia over Coax Alliance) _________________________________________________________ 24
1.4.4 Satellite outdoor unit, low noise block (LNB) for multiple users ____________________________________ 25
1.4.5 Satellite Multi Switch Box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV ________________________________ 26
1.4.6 Digital Satellite Set Top Box (high definition) ____________________________________________________ 27
1.5 Consumer Mobile _________________________________________________________________________________ 28
1.5.1
Mobile Platforms (GPS / TV on mobile / FM radio / Reference clock / CMMB / LTE) ___________________________ 28
1.5.2 A 2.4 & 5 GHz front-end for WLAN (802.11n Dual Concurrent) ____________________________________ 29
1.5.3 2-way radio / family radio system ______________________________________________________________ 30
1.5.4 DECT front-end / DECT in-house base station __________________________________________________ 31
1.6 Automotive & Industrial ___________________________________________________________________________ 32
1.6.1 Active antenna ______________________________________________________________________________ 32
1.6.2 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission ______ 33
1.6.3 Tire pressure monitoring system_______________________________________________________________ 34
1.6.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL) _________________________________________ 35
1.6.5 E-metering, RF generic front-end with a single antenna / ZigBee __________________________________ 36
1.6.6 RF Plasma Lighting___________________________________________________________________________ 37
1.6.7 Medical Imaging _____________________________________________________________________________ 38
1.6.8 RF Microwave furnace application _____________________________________________________________ 39
2. Technologies & focus products ____________________________________________________________________ 40
2.1 Get the fastest TTFF with GPS LNAs that use proven QUBiC4X SiGe:C ____________________________ 40
2.2 Always the right match with our latest 6th and 7th generation SiGe:C wideband transistors ____________ 41
2.3 NXP Medium-Power MMICs BGA7xxx for broadband applications ________________________________ 42
2.4 Low-noise LO generators for microwave & mmWave radios _______________________________________ 43
2.5 Complete satellite portfolio for all LNB architectures ____________________________________________ 44
2.6 VSAT, 2-way communication via satellite ________________________________________________________ 46
2.7 NXP CATV C-family for the Chinese SARFT standard ____________________________________________ 48
2.7.1 NXP GaAs HFC CATV solutions CGY888C, CGD942C and CGD944C ______________________________ 51
2.8 Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks ____________________ 52
2.9 Doherty amplifier technology for state-of-art wireless infrastructure _______________________________ 54
2.10 Boost efficiency and lower system cost in wireless infrastructure with GaN _________________________ 56
2.11 Looking for the leader in SiGe:C? You've just found us! __________________________________________ 57
2.12 Microwave / Radar ___________________________________________________________________________ 59
2.13 Digital broadcasting at its best ________________________________________________________________ 61
7NXP Semiconductors RF Manual 14th edition
3. Product portfolio _________________________________________________________________________________ 62
3.1 New products _______________________________________________________________________________ 62
3.2 RF diodes ___________________________________________________________________________________ 64
3.2.1 Varicap diodes ______________________________________________________________________________ 64
3.2.2 PIN diodes _________________________________________________________________________________ 65
3.2.3 Band-switch diodes __________________________________________________________________________ 67
3.2.4 Schottky diodes _____________________________________________________________________________ 67
3.3 RF Bipolar transistors ________________________________________________________________________ 68
3.3.1 Wideband transistors ________________________________________________________________________ 68
3.4 RF ICs ______________________________________________________________________________________ 71
3.4.1 MMICs _____________________________________________________________________________________ 71
3.4.2 Low noise LO generators for VSAT and general microwave applications ____________________________ 73
3.5 RF MOS transistors _________________________________________________________________________ 74
3.5.1 JFETs _____________________________________________________________________________________ 74
3.5.2 MOSFETs __________________________________________________________________________________ 76
3.6 RF Modules ________________________________________________________________________________ 78
3.6.1 CATV Reverse Hybrids _______________________________________________________________________ 78
3.6.2 CATV Push-Pulls ____________________________________________________________________________ 78
3.6.3 CATV power doublers _______________________________________________________________________ 79
3.6.4 CATV optical receivers _______________________________________________________________________ 79
3.7 RF power transistors ________________________________________________________________________ 80
3.7.1 Base Station transistors _____________________________________________________________________ 80
3.7.2 Broadcast / ISM (industrial, scientific, medical) RF power transistors ______________________________ 83
3.7.3 Microwave LDMOS RF power transistors _______________________________________________________ 84
3.8 High Speed Data Converters ________________________________________________________________ 85
3.8.1 High Speed ADCs ___________________________________________________________________________ 85
3.8.2 High Speed DACs ___________________________________________________________________________ 85
4. Design support __________________________________________________________________________________ 86
4.1 S-Parameters _______________________________________________________________________________ 86
4.2 Simulation models ___________________________________________________________________________ 86
4.2.1 Spice models ______________________________________________________________________________ 86
4.2.2 RF Power device simulation models ____________________________________________________________ 87
4.3 Application notes ____________________________________________________________________________ 87
4.4 Demo boards _______________________________________________________________________________ 87
4.4.1 IC, MMIC and SiGe:C transistor demo boards ___________________________________________________ 87
4.4.2 RF power transistor demo boards _____________________________________________________________ 87
4.4.3 High Speed Converter demo boards ___________________________________________________________ 88
4.5 Samples of products in development ___________________________________________________________ 88
4.6 Samples of released products ________________________________________________________________ 88
4.7 Datasheets _________________________________________________________________________________ 88
4.8 Design-in support ___________________________________________________________________________ 88
4.9 NEW: interactive selection guides ____________________________________________________________ 88
5. Cross-references & replacements __________________________________________________________________ 89
5.1 Cross-references: Manufacturer types versus NXP types _________________________________________ 89
5.2 Cross-references: NXP discontinued types versus NXP replacement types _________________________ 98
6. Packing and packaging information _______________________________________________________________ 100
6.1 Packing quantities per package with relevant ordering code _____________________________________ 100
6.2 Marking codes list __________________________________________________________________________ 102
7. Abbreviations ___________________________________________________________________________________ 104
8. Contacts and web links __________________________________________________________________________ 105
9. Product index ___________________________________________________________________________________ 106
8NXP Semiconductors RF Manual 14th edition
9NXP Semiconductors RF Manual 14th edition
1.1 Mobile Communication Infrastructure
Above diagram shows a simplified base station block diagram with its two main branches: transmit (upper half, TX) and receive (lower half, RX).
Walking along the transmit branch, after the interfacing into the signal processing part, one first encounters the digital to analog converters (DAC), which include a
serial interface in our case (SER). The transmit signal then passes a low-pass filter block (LPF) and is being upconverted in the IQ mixer stage. Next follows a variable
gain amplifier (VGA), a bandpass filter (TX BPF) and the power amplifier board with a medium power amplifier- (MPA) and the high power amplifier (HPA)stages.
An isolater and duplexer are the last two basic blocks up to the antenna. A feedback line is provided to monitor the transmitted signal. The TX signal is “sampled”,
down-converted in a mixer, amplified (VGA), bandpassfiltered (BPF) and converted to digital by an analog to digital converter (SER ADC), with a high speed serial
interface.
The main RX branch of the base station starts at the duplexer, is amplified by a low noise amplifier (LNA) and band pass filtered (RX BPF) very close to the antenna in
a “tower mounted amplifier”. A further amplifier (LNA) then feeds into the down conversion mixer; the I and Q base band signals are further amplified (VGA) and via
a low pass filter (LPF) fed into the respective ADC’s (SER I-ADC and SER Q-DAC).
The serial interface in turn connects to the base band signal processing unit. The synchronizing “heartbeats” in the diagram are controlled by phase locked loops
(PLL) with or without a voltage controlled oscillator (VCO). Microcontrollers (μC) provide local control and monitoring functions within the building blocks.
The colored building blocks can all be sourced by NXP and are discussed in the following paragraphs.
brb411
RF POWER BOARD
MPA HPA ISOLATOR
VGA
LNA
VGA
VGABPF
LPF
LPF
LPF
LPF
LNA
ANTENNA
TX/RX
RX BPF
TX BPF
TOWER
MOUNTED
AMPLIFIER
DUPLEXER
VGA
mixer
PLL VCOPLL
PLL
IQ MIXER
0
90
MIXER
MIXER
PLL VCO
PLL VCO
IQ MIXER
0
90
MIXER
MIXER
SER ADC
SER I-ADC
SER Q-ADC
SER Q-DAC
SER I-DAC
µC
µC
INTERFACING
SIGNAL
PROCESSING
Processing
RF small signal RF power
Dataconverters
1.1.1 Base stations (all cellular standards and frequencies)
See also brochure: 'Your partner in Mobile Communication Infrastructure design': document number: 9397 750 16837.
Application diagram
10 NXP Semiconductors RF Manual 14th edition
Product highlight:
high power transistor BLF7G20L(S)-300P
NXP's LDMOS Gen6 and Gen7 enable the world's most efficient base
station designs by combining very high intrinsic (Si technology) and
extrinsic (amplifier design) efficiencies. Gen7 is specifically designed
for Doherty amplifiers.
Features
`unrivalled ruggedness
` very consistent device performance
` highest Doherty amplifier efficiencies to date
`300 W peak power; 35 W average power in push pull package
`low thermal resistance design for very reliable operation
Recommended products
Function Sub function frange Type PL(AV) ηDGpMode of operation
MHz W % dB
HPA
(high power
amplifier - single
transistors)
driver 10 - 2200 BLF6G21-10G 0.6 15 18.5 WCDMA. TD-SCDMA. GSM. EDGE
MMIC driver 700 - 1000 BLM6G10-30 2 11.5 29 WCDMA
final 700 - 1000 BLF6G10-160RN 32 27 22.5 WCDMA
688 - 1000 BLF6G10-200RN 40 28.5 20 WCDMA
final 1800 - 2000 BLF6G20-230PRN 65 32 17.5 WCDMA
final 1805 - 1880 BLF7G20L(S)-200 50 30 17 WCDMA
final 1805 - 1880 BLF7G20L(S)-250P 70 30 17 WCDMA
final 1805 - 1880 BLF7G20L(S)-300P 85 30 17 WCDMA
MMIC driver 2100 - 2200 BLM6G22-30 2 9 29.5 WCDMA
integrated Doherty driver 2010 - 2025 BLD6G21L-50 8 42 13.5 TD-SCDMA
2110 - 2170 BLD6G22L-50 8 38 13.3 WCDMA
final 2000 - 2200
BLF7G22L-130 30 32 18.5 WCDMA
BLF6G22-180PN 50 27.5 17.5 WCDMA
BLF6G22-180RN 40 25 16 WCDMA
final 2110 - 2170 BLF7G22L(S)-200 55 17 28 WCDMA
final 2300 - 2400 BLF7G24L(S)-100(G) 24 18 28 WCDMA
driver
2500 - 2700
BLF6G27-10 2 20 19 WiMAX
final BLF6G27-135 20 22.5 16 WiMAX
BLF7G27L-200P 20 25 16.5 WiMAX
driver 3400 - 3600 BLF6G38-10 2 20 14 WiMAX
final BLF6G38-100 18.5 21.5 13 WiMAX
Function Freq band
(MHz)
PPEAK
(dBm)
POUT-AVG
(dBm)
VDS
(V)
Gain
(dB)
Drain Eff.
(%) Type Main transistor Peak transistor
HPA
(high power
amplifier - Doherty
designs)
728-768 58 50 32 19 47 SYM BLF6G10LS-200RN BLF6G10LS-200RN
869-894 58 50 32 19 46 SYM BLF6G10-200RN BLF6G10-200RN
925-960 58.9 50 32 22 44 SYM / MMPP 1/2 BLF6G10-260PRN 1/2 BLF6G10-260PRN
1805-1880 58.2 50 28 16 42 SYM / MPPM BLF7G20LS-250P BLF7G20LS-250P
1930-1990 58 50 32 15.5 37 SYM BLF6G20-230PRN BLF6G20-230PRN
2110-2170 58 50 32 15 40 SYM BLF6G22-180PN BLF6G22-180PN
2300-2400 49.5 42 28 14.5 43 SYM 1/2 BLF7G27-75P 1/2 BLF7G27-75P
2500-2700 52.5 44.5 28 14 38 SYM 1/2 BLF6G27-150P 1/2 BLF7G27-150P
3400-3600 51 43 28 11.5 32 SYM BLF6G38-50 BLF6G38-50
11NXP Semiconductors RF Manual 14th edition
Product highlight:
medium power amplifier BGA7124 MMIC
The BGA7124 MMIC is a one-stage driver amplifier, offered in a
low-cost ultra small SOT908 leadless package.
It delivers 25 dBm output power at 1 dB gain compression and a
superior performance for various narrowband-tuned application
circuits for frequencies up to 2700 MHz.
Features
`400 MHz to 2700 MHz frequency operating range
` 16 dB small signal gain at 2 GHz
` 27 dBm output power at 1 dB gain compression
` Integrated active biasing
` 3.3 V / 5 V single supply operation
` Simple quiescent current adjustment
` 1 μA shutdown mode
Function Sub function Max. sampling
frequency Type # of bits Interface
Dataconverters
dual channel DAC
650 Msps DAC1405D650 14 LVCMOS
160 Msps DAC1405D160 14 LVCMOS
125 Msps DAC1401D125 14 LVCMOS
750 Msps DAC1408D750 14 JESD204A
single channel ADC
80 Msps ADC1207S080 12 LVCMOS
125 Msps ADC1415S125 14 LVCMOS&LVDS DDR
125 Msps ADC1410S125 14 LVCMOS&LVDS DDR
dual channel ADC 125 Msps ADC1412D125 14 LVCMOS&LVDS DDR
125 Msps ADC1413D125 14 JES204A
Function Product Package Type
Discrete
attenuator RF diode PIN diode
SOT753 BAP64Q
SOT753 BAP70Q
Various^ BAP64
Function Product Package Type
LNA (low noise
amplifier) &
Mixer
RF transistor SiGe:C
transistor SOT343F BFU725F/N1
RF MMIC SiGe:C MMIC SOT650
BGU7051
BGU7052
BGU7053
BGU7054
Function Product Package Type
VGA
(variable gain
amplifier)
MMIC SiGe:C MMIC SOT617
BGA7202*
BGA7203*
BGA7204*
BGA7350*
BGA7351*
Function Product Package Type
MPA
(medium power
amplifier)
MMIC
MMIC SOT89 BGA6589
SiGe:C MMIC
SOT908 BGA7124
SOT89 BGA7024
SOT908 BGA7127
SOT89 BGA7027
SOT908 BGA7130*
SOT908 BGA7133*
* = check status at 3.1 new products, as this type has not been released yet
for mass production.
^ = SOD523, SOD323, SOT23 & SOT323
12 NXP Semiconductors RF Manual 14th edition
1.1.2 Point-to-point
Application diagram
brb406
INDOOR UNIT
OUTDOOR UNIT
REF REF
to/from
IDU
LNA
VGA2
IF
MPA
BUF
PMU PMU
MPX
PLL VCO
MPX
LPF
BPF
ANTENNA
DATA
INTERFACE
ANALOG
VGA
0
90
POWER
SUPPLY
DIGITAL
SIGNAL
PROCESSOR
LNA2 LNA1
VGA2
VGA1
VGA1VGA1
SYNTH PLL
PLL
IF1
MPA PA
PLL VCO 0
90
Recommended products
Indoor unit
Function Product Package Type
VGA 1
(variable gain
amplifier)
MMIC SiGe:C
MMIC SOT617
BGA7202*
BGA7203*
BGA7204*
Function Product Package Type
MPA (medium
power
amplifier)
MMIC
MMIC SOT89
BGA6289
BGA6489
BGA6589
SiGe:C
MMIC
SOT908 BGA7124
SOT89 BGA7024
SOT908 BGA7127
SOT89 BGA7027
SOT908 BGA7130*
BGA7133*
Function Product Package Type
IF
IF gain block SiGe:C
MMIC
SOT363
BGA2800
BGA2801
BGA2815
BGA2816
MMIC
General
purpose
wideband
amplifiers
BGM1012
BGA2714
BGA2748
BGA2771
Function Product Package Type
LNA
RF MMIC SiGe:C
MMIC
SOT891 BGU7003
SOT650
BGU7051*
BGU7052*
BGU7053*
BGU7054*
RF transistor
SiGe:C
transistor SOT343F BFU725F/N1
Wideband
transistor
SOT343R BFG425W
BFG424W
SOT143R BFG325/XR
Function Product Package Type
VGA 2
(variable gain
amplifier)
MMIC SiGe:C
MMIC SOT617
BGA7350*
BGA7351*
* = check status at 3.1 new products, as this type has not been released yet for
mass production.
13NXP Semiconductors RF Manual 14th edition
Outdoor unit
Function Product Package Type
VGA 1
(variable gain
amplifier)
MMIC SiGe:C
MMIC SOT617
BGA7202*
BGA7203*
BGA7204*
Function Product Package Type
MPA (medium
power
amplifier)
MMIC
MMIC SOT89
BGA6289
BGA6489
BGA6589
SiGe:C
MMIC
SOT908 BGA7124
SOT89 BGA7024
SOT908 BGA7127
SOT89 BGA7027
SOT908 BGA7130*
BGA7133*
Function Product Package Type
Buffer RF transistor SiGe:C
transistor SOT343F BFU725F/N1
Function Product Package Type
LNA 2
RF transistor SiGe:C
transistor SOT343F BFU725F/N1
MMIC SiGe:C
MMIC SOT891 BGU7003
Function Product Package Type
IF 1
IF gain block SiGe:C
MMIC
SOT363
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
MMIC
General
purpose
wideband
amplifiers
BGM1014
BGM1013
BGM1012
BGA2714
Function Product Package Type
VGA 2
(variable gain
amplifier)
MMIC SiGe:C
MMIC SOT617
BGA7202*
BGA7203*
BGA7204*
BGA7350*
BGA7351*
Function Product Package Type
PLL RF IC SiGe:C IC SOT616
TFF1003HN
TFF1007HN*
TFF11xxxHN*^
Function Product Package Type
Oscillator RF transistor
Wideband
transistor SOT343R BFG424W
BFG425W
SiGe:C
transistor SOT343F BFU725F/N1
Function Product Package Type
Synth RF diode Varicap
diode SOD523 BB202
* = check status at 3.1 new products, as this type has not been released yet for
mass production.
^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.2
Product highlight:
medium power amplifier BGA7124 MMIC
The BGA7124 MMIC is a one-stage driver amplifier, offered in a low-
cost ultra small SOT908 leadless package. It delivers 25 dBm output
power at 1 dB gain compression and a superior performance for
various narrowband-tuned application circuits for frequencies up to
2700 MHz.
Features
`400 MHz to 2700 MHz frequency operating range
`16 dB small signal gain at 2 GHz
`27 dBm output power at 1 dB gain compression
`Integrated active biasing
`3.3 V / 5 V single supply operation
`Simple quiescent current adjustment
`1 μA shutdown mode
14 NXP Semiconductors RF Manual 14th edition
1.2.1 VSAT
Application diagram
brb405
INDOOR UNIT OUTDOOR UNIT
REF REF ANTENNA
to/from
IDU
LNA
IF
IF2
IF1
BUF
BUF
PMU PMU
MPX MPX OMT
MOD
DEMOD
DATA
INTERFACE
POWER
SUPPLY
DIGITAL
SIGNAL
PROCESSOR
LNA2
PA
LNA1
IF1
SYNTH PLL
PLL´ N
1.2 Microwave & mmWave
Recommended products VSAT
Indoor unit
Function Product Package Type
IF
IF gain block SiGe:C MMIC
SOT363
BGA2800
BGA2801
BGA2815
BGA2816
MMIC
General purpose
wideband
amplifiers
BGM1012
BGA2714
BGA2748
BGA2771
Function Product Package Type
LNA RF transistor
SiGe:C transistor SOT343F BFU725F/N1
Wideband
transistor
SOT343R BFG425W
BFG424W
SOT143R BFG325/XR
15NXP Semiconductors RF Manual 14th edition
Recommended products VSAT
Outdoor unit
Function Product Package Type
IF
IF gain block SiGe:C MMIC
SOT363
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
MMIC
General purpose
wideband
amplifiers
BGM1014
BGM1013
BGM1012
BGA2714
Function Product Package Type
LNA2 RF transistor SiGe:C transistor SOT343F BFU725F/N1
MMIC SiGe:C MMIC SOT891 BGU7003
Function Product Package Type
PLL RF IC SiGe:C IC SOT616
TFF1003HN
TFF1007HN*
TFF11xxxHN*^
Function Product Package Type
Oscillator RF transistor
Wideband
transistor SOT343R BFG424W
BFG425W
SiGe:C transistor SOT343F BFU725F/N1
Function Product Package Type
Synth RF diode Varicap diode SOD523 BB202
Function Product Package Type
Buffer RF transistor SiGe:C transistor SOT343F BFU725F/N1
* = check status at 3.1 new products, as this type has not been released yet for mass production.
^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.2
Product highlight:
TFF1003HN
The TFF1003HN is a Ku band frequency generator intended for
low phase noise Local Oscillator (LO) circuits for Ku band VSAT
transmitters and transceivers. The specified phase noise complies
with IESS-308 from Intelsat.
Features
`Phase noise compliant with IESS-308 (Intelsat)
`LO generator with VCO range from 12.8 GHz to 13.05 GHz
`Input signal 50 MHz to 815 MHz
`Divider settings 16, 32, 64, 128 or 256
16 NXP Semiconductors RF Manual 14th edition
1.2.2 Microwave products for Avionics, L- and S-band Radar applications
Application diagram
brb410
RF signals
RF small signal
RF power
control and timing
local oscillator signal
local oscillator
video
RF POWER BOARD
MPA
VGA
LNA
IF amplifier
HPA ISOLATOR
WAVEFORM
GENERATOR
DISPLAY
AND
CONTROL
ANTENNA
DRIVE
DETECTOR
PLL VCO
duplexer
mixer
mixer
PLL VCO
video, timing, bias voltage,
control and data
I-f signals
Recommended products
Application Function Name Package MHz W % dB V
Avionics
power
transistors
driver BLL6H0514-25 SOT467C 500 - 1400 25 (min) 50 19 50 PULSED RF; class AB
final BLA6H0912-500 SOT634A 960 - 1215 450 50 17 50 PULSED RF; class AB
final BLA6H1011-600 SOT539A 1030 - 1090 600 52 19 50 PULSED RF; class AB
final BLA6G1011-200R SOT502A2 1030 - 1090 200 65 20 28 PULSED RF; class AB
L-Band
power
transistors
driver BLL6H0514-25 SOT467C 500 - 1400 25 (min) 50 19 50 PULSED RF; class AB
final BLL6H1214-500 SOT539A 1200 - 1400 500 (min) 50 17 50 PULSED RF; class AB
final BLL6H1214L(S)-250 SOT502 1200 - 1400 250 55 17 50 Pulsed RF
final BLL6HL(S)0514-130 SOT1135 500 - 1400 130 50 18 50 Pulsed RF
S-band
power
transistors
driver BLS6G2731-6G SOT975C 2700 - 3100 6 33 15 32 PULSED RF; class AB
driver BLS6G3135-20 SOT608A 3100 - 3500 20 45 15.5 32 PULSED RF; class AB
driver BLS6G3135S-20 SOT608B 3100 - 3500 20 45 15.5 32 PULSED RF; class AB
final BLS6G2731-120 SOT502A 2700 - 3100 120 48 13.5 32 PULSED RF; class AB
final BLS6G2731S-120 SOT502B 2700 - 3100 120 48 13.5 32 PULSED RF; class AB
final BLS6G2933S-130 SOT922-1 2900 - 3300 130 47 12.5 32 PULSED RF; class AB
final BLS6G3135-120 SOT502A 3100 - 3500 120 43 11 32 PULSED RF; class AB
final BLS6G3135S-120 SOT502B 3100 - 3500 120 43 11 32 PULSED RF; class AB
final BLS7G2933P-200 pallet 2900 - 3300 200 45 11 32 PULSED RF; class AB
final BLS7G2731P-200 pallet 2700 - 3100 200 45 11 32 PULSED RF; class AB
final BLS6G2731S-130 SOT922 2700 - 3100 130 49 13 32 Pulsed RF
17NXP Semiconductors RF Manual 14th edition
Function Product Package Type
Discrete attenuator RF diode PIN diode Various^ BAP64
^ = SOD523, SOD323, SOT23 & SOT323
Function Product Package Type
LNA (low noise
amplifier) & Mixer RF transistor SiGe:C transistor SOT343F BFU725F/N1
Function Product Package Type
IF amplifier MMIC
SiGe:C MMIC
SOT363
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
General purpose
wideband
amplifiers
BGM1014
BGM1013
BGM1012
Function Product Package Type
PLL/VCO
LO generator RF IC SiGe:C IC SOT616
TFF1003HN
TFF1007HN*
TFF11xxxHN*^
Function Product Package Type
VGA
(variable gain
amplifier)
MMIC SiGe:C MMIC SOT617
BGA7202*
BGA7203*
BGA7204*
BGA7350*
BGA7351*
Function Product Package Type
MPA
(medium power
amplifier)
MMIC SiGe:C MMIC
SOT908 BGA7124
SOT89 BGA7024
SOT908 BGA7127
SOT89 BGA7027
SOT908 BGA7130*
SOT908 BGA7133*
MMIC SOT89 BGA6589
* = check status at 3.1 new products, as this type has not been released yet for mass production.
^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.2
Product highlight:
The BLS6G2933P-200 is the first LDMOS based, industry standard
pallet available on the market. This pallet offers more than 40%
efficiency includes the complete bias network and can be used
as direct replacement for current solutions.
Features
`P1 dB> 200 W
`Efficiency > 40%
`Industry standard footprint
`50 Ω in/out matched for entire bandwidth
`Lightweight heat sink included
18 NXP Semiconductors RF Manual 14th edition
1.3.1 CATV optical (optical node with multiple out-ports)
Application diagram
bra852
coax out
port 1
RF pre-
amplifier
splitter
duplex
filter
RF power
amplifier
RF forward
receiver
fiber in
coax out
port 2
coax out
port 3
coax out
port 4
Recommended products
Function Product Frequency Package Type
RF forward
receiver
Forward
path receiver 870 MHz
SOT115 BGO807
SOT115 BGO807CE
SOT115 BGO827
Function Product Frequency Gain (dB) Type
RF
pre-amplifier
Push-Pulls 870 MHz 18 - 19 BGY885A
21 - 22 BGY887
Power doubler 870 MHz 18.2 - 18.8 BGD812
Function Product Frequency Gain (dB) Type
RF power
amplifier
Power
doublers 870 MHz 20.5 - 22.5 CGD942C
23 - 25 CGD944C
Product highlight:
BGO807CE
BGO807CE is an integrated optical receiver module that provides
high output levels and includes an integrated temperature
compensated circuitry. In your optical node design, BGO807CE
enables a high performance/ price ratio and ruggedness. When
upgrading an HFC network from analog to digital our BGO807CE
is the perfect fit.
Features
` Excellent linearity
` Low noise
` Excellent flatness
` Standard CATV outline
` Rugged construction
` Gold metallization ensures excellent reliability
` High optical input power range
1.3 Fixed Communication Infrastructure
Note: looking for MoCA and Satellite Multi Switch Boxes? See chapter 1.4 TV, STB and Satellite.
19NXP Semiconductors RF Manual 14th edition
1.3.2 CATV electrical (line extenders)
Application diagram
duplex
filter duplex
filter
RF pre-
amplifier RF power
amplifier
RF reverse
amplifier
coax in coax out
bra505
Recommended products
Function Product Frequency Gain (dB) Type
RF
pre-amplifier Push-Pulls
550 MHz
33.5 - 35.5 BGY588N
33.5 - 35.5 BGY588C
26.2 - 27.8 BGY587B
600 MHz 21 - 22 BGY687
750 MHz
33.5 - 35.2 BGE788C
33.5 - 34.5 BGE788
18 - 19 BGY785A
21 - 22 BGY787
870 MHz
18 - 19 BGY885A
21 - 22 BGY887
33.5 - 34.5 BGY888
34.5 - 36.5 CGY888C
1000 MHz
18 - 19 BGY1085A
22 CGY1041*
24 CGY1043*
28 CGY1047
29 CGY1049*
32 CGY1032*
Function Product Frequency Gain (dB) Type
RF reverse
amplifier
Reverse
hybrids
5-75 MHz 29.2 - 30.8 BGY68
5-120 MHz 24.5 - 25.5 BGY66B
5-200 MHz 23.5 - 24.5 BGY67A
All available in SOT115 package.
* = check status at 3.1 new products, as this type has not been released yet for
mass production.
Function Product Frequency Gain (dB) Type
RF power
amplifier
Power
doublers
550 MHz 18-19 BGD502
750 MHz
19.5 - 20.5 BGD704
18.2 - 18.8 BGD712
18.2 - 18.8 BGD712C
20 - 20.6 BGD714
870 MHz
18 - 19 BGD802
18.2 - 18.8 BGD812
19.7 - 20.3 BGD814
20.5 - 22.5 CGD942C
23 - 25 CGD944C
1000 MHz
21 CGD1040Hi
23 CGD1042H
23 CGD1042Hi
25 CGD1044H
25 CGD1044Hi
26 CGD1046Hi*
Product highlight:
CGD1046Hi
CGD1046Hi* with a very high-output power level is primarily
designed for use in fiber deep-optical-node applications (N+1/2/3).
This 1 GHz hybrid amplifier solution offers an extended temperature
range, high power overstress capabilities in case of surges and high
ESD levels resulting in a low cost of ownership. It’s designed for
durability and offering superior ruggedness.
Features
`High-output power
`High power gain for power doublers
`Extremely low noise
`Dark Green products
`GaAs HFET dies for high-end applications
`Rugged construction
`Superior levels of ESD protection
`Integrated ringwave protection
`Design optimized for digital channel loading
`Temperature compensated gain response
`Optimized heat management
`Excellent temperature resistance
20 NXP Semiconductors RF Manual 14th edition
1.3.3 Broadcast / ISM (industrial, scientific & medical)
Application diagram
typ. 0.5 kW
DVB-T
typ. 5 kW DVB-T
output power
TV exciter
DVB-T
Driver stages
amplifiers
harmonic
filter power
monitor
8× final
Recommended products
Function Type frange PL(AV) nDGpMode of operation
MHz W % dB
driver BLF871(S) 0 - 1000 100 47 21 2-TONE
0 - 1000 24 33 22 DVB-T
driver BLF881(S) 0 - 1000 140 49 21 2-TONE
0 - 1000 33 34 21 DVB-T
driver BLF571 0 - 1000 20 70 27.5 CW
final BLF573(S) 0 - 1000 300 70 27.2 CW
final BLF574 0 - 1000 500 70 26.5 CW
final BLF578 0 - 1000 1200 71 24 PULSED RF
0 - 1000 1000 75 26 CW
final BLF645 0 - 1400 100 45 18 2-TONE
0 - 1400 100 56 18 CW
final BLF878 470 - 860 75 32 21 DVB-T
470 - 860 300 46 21 DVB-T
final BLF888 470 - 860 250 46 19 2-TONE
470 - 860 110 31 19 DVB-T
final BLF888A(S) 470 - 860 250 46 19 2-TONE
470 - 860 115 32 19 DVB-T
final BLF177 28 - 108 150 >35 20 CW class AB
BLF278 108 - 225 250 - 300 50 - 80 14 - 20 CW class AB
Product highlight:
NXP’s 50 V high voltage LDMOS process enables highest power
and unequalled ruggedness.
BLF888A: delivers the highest power level for digital broadcasting
available to date.
Features
`Best broadband efficiency
` Highest power devices
` Unrivalled ruggedness
` Low-thermal resistance design for very reliable operation
` Very consistent device performance
21NXP Semiconductors RF Manual 14th edition
1.4.1 Network interface module (NIM) for TV reception
Application diagram
brb403
RF input
RF SW
VGA
WB LNA
surge
RF output
CONVENTIONAL
TUNER OR
SILICON TUNER
Make a high performance active splitter in a NIM tuner
with BGU703x.
Nowadays more flexibility in design and more complicated
signal handling is required for a TV tuner. A front-end of
a TV signal receiver is no longer just a tuned receiver, but
has evolved into a RF Network Interface Module (NIM) with
tuned demodulators, active splitters and re-modulators. The
active splitter requires an LNA with excellent linearity. We
have developed a new series of LNA/ VGA MMICs (BGU703x)
designed specifically for high linearity (IP3O of 29 dBm) in low
noise applications like an active splitter in a NIM tuner.
Save energy with BF11x8
The BF11x8 series are small signal RF switching MOSFETs
which can be used for switching RF signals up to 1 GHz. With
the use of the BF11x8 series as a RF switch you can save a
considerable amount of energy. When a recording device
(DVD-R, HDD-R, VCR, DVR) is powered off people can remain
watching TV, although the antenna is looped via the recording
device. Without using BF11x8 the antenna signal is lost. At the
moment the power of the recording device is on, the BF11x8
is open, so the RF signal travels via the recording device to
the TV tuner. At the moment the power of the recording
device is completely off, the BF11x8 closes. This ensures that
the RF signal is looped through directly to the TV tuner and
that TV reception is guaranteed. Energy is saved because the
recording device can be powered off.
1.4 TV, NIM (STB) and Satellite
Note: looking for TV on Mobile? See chapter 1.5.1 Handset.
22 NXP Semiconductors RF Manual 14th edition
Recommended products
Function Product Package Type
RF Switch /
PLT switch MOSFET
5V Silicon RF
switch
SOT23 BF1107
SOT143B BF1108
SOT143R BF1108R
SOT343 BF1108W
SOT343R BF1108WR
3.3V Silicon
RF Switch
SOT143B BF1118
SOT143R BF1118R
SOT343 BF1118W
SOT343R BF1118WR
Note: Using the BF1108 as passive loop through switch between the RF input
and output of a NIM tuner can save considerable energy. For example, when the
HDR is not in used, the TV signal can still be distributed to the TV without having
to power up the active splitter circuit in the HDR. That is because the BF1108 RF
switch is closed when no power is supplied to it, and is open when it is powered
on. For 3.3 V applications, the BF1118 can be used instead.
Function Product Package Type
VGA
RF BiMOS
MMIC
Wideband
transistor
with gain
levels of 5 dB
and 10 dB,
plus a bypass
mode.
SOT363 BGU7033*^
Wideband
transistor
with gain
level of 10dB
and a bypass
mode.
SOT363 BGU7032*^
LNA
Wideband
transistor
with gain
level of 10dB
SOT363 BGU7031*^
RF bipolar
transistor
Wideband
transistor
SOT143 BFG520
BFG540
SOT89 BFQ540
* = check status at 3.1 new products, as this type has not been released yet for
mass production.
^ = this new series of LNA MMICs is designed specically for high linearity (IP3O
of 29 dBm), low noise application like those in an active splitter or NIM tuner.
Housed in a 6-pin SOT363 plastic SMD package, these MMICs are equipped
with internal bias and matched to 75 ohms internally. For the VGAs, current
consumption is < 5mA during the bypass mode. Only 2 external components are
needed, thus saving precious circuit board space!
Function Product Package Type
AGC control
amplifier MOSFET
2 – in – 1 with
band switch
@ 5V
SOT363 BF1215
2 – in – 1
@ 5V SOT363 BF1216
5V SOT343 BF1217
Note: given that there is now an LNA before the MOSFET, the gain of these
MOSFETs is made slightly lower and the cross-modulation higher. That way, the
MOSFET would not be constantly under AGC even under nominal RF input level.
Product highlight:
BF11x8 silicon RF switch, MOSFET
This switch is a combination of a depletion type field-effect transistor
and a band switching diode in an SOT143 or SOT343 package.
The low insertion loss and high isolation capabilities of this device
provide excellent RF switching functions. The gate of the MOSFET
can be isolated from ground with the diode, resulting in low losses.
Integrated diodes between gate and source and between gate and
drain protect against excessive input voltage surges.
Features
`Specially designed for low loss RF switching up to 1 GHz
`Easy to design-in
`Power ON: low losses
`Power OFF: high isolation
`ON or OFF, ZERO power consumption
23NXP Semiconductors RF Manual 14th edition
1.4.2 Basic TV tuner
Application diagram
bra500
RF input
MOSFET
VAGC
From antenna,
cable, active splitter,
etc.
MOPLL
IC
IF
Recommended products
Function Product Package Type
Input filter Varicap
diode
VHF low
SOD323 BB152
SOD523 BB182
SOD882T BB182LX
VHF high
SOD323 BB153
SOD523 BB178
SOD523 BB187
SOD882T BB178LX
SOD882T BB187LX
UHF
SOD323 BB149A
SOD882T BB179LX
SOD523 BB179
SOD523 BB189
Function Product Package Type
RF
pre-amplifier MOSFET
5 V
SOT143 BF1201
SOT143 BF1202
SOT143 BF1105
SOT143 BF1211
SOT143 BF1212
2-in-1 @ 5 V
SOT363 BF1102R
SOT363 BF1203
SOT363 BF1204
SOT363 BF1205
SOT363 BF1205C
SOT363 BF1206
SOT363 BF1207
SOT666 BF1208
SOT666 BF1208D
SOT363 BF1210
SOT363 BF1214
SOT363 BF1218
2-in-1 @ 3 V SOT666 BF1206F
V
Function Product Package Type
Bandpass
filter
Varicap
diode
VHF low
SOD323 BB152
SOD882T BB182LX
SOD523 BB182
VHF high
SOD323 BB153
SOD882T BB178LX
SOD523 BB178
SOD882T BB187LX
SOD523 BB187
UHF
SOD323 BB149A
SOD882T BB179LX
SOD523 BB179
SOD523 BB189
Function Product Package Type
Oscillator Varicap
diode
VHF low
SOD323 BB152
SOD882T BB182LX
SOD523 BB182
VHF high
SOD323 BB153
SOD882T BB178LX
SOD523 BB178
SOD882T BB187LX
SOD523 BB187
UHF
SOD323 BB149A
SOD882T BB179LX
SOD523 BB179
SOD523 BB189
Function Product Package Type
RF
pre-amplifier MOSFET
2-in-1 with
band switch
@ 5V
SOT363 BF1215
2-in-1 @ 5V SOT363 BF1216
5V SOT343 BF1217
Product highlight: BF1206F dual gate mosfet double
amplifier specified for low power applications
The device consists of two dual gate mosfet amplifiers in a small
SOT666 flatlead package. The BF1206F is a true low power device
specified for low voltage and low currents, intended for use in mobile
applications where power consumption is critical. Performance
is suitable for application at supply voltages of 3 Volts and
draincurrents of 4 mA.
Features
`Low power specified
` Two amplifiers in one small SOT666 package
` Shared gate 2 and Source leads
` Each amplifier is biased by an external bias resistor
` Excellent noise and crossmodulation performance
24 NXP Semiconductors RF Manual 14th edition
1.4.3 MoCA (Multimedia over Coax Alliance)
Application diagram
brb401
15 dB
MoCA
Chip
BALUN
LPF
Diplexer/
BPF
Cable
Connection
PA
T/R
ON/OFF
Switched
1 Bit Attenuator
ON/OFF
Tx
Rx
BALUN
Recommended products
Function Product Package Type
SPDT switch RF diode PIN diode
SOD523 BAP64-02
SOD323 BAP64-03
SOT23 BAP64-04
SOT323 BAP64-04W
SOT23 BAP64-05
SOT323 BAP64-05W
SOT23 BAP64-06
SOT323 BAP64-06W
SOD822T BAP64LX
Function Product Package Type
PA (power
amplifier) MMIC SiGe:C
MMIC
SOT908 BGA7124
SOT89 BGA7024
SOT908 BGA7127
SOT89 BGA7027
Product highlight:
medium power amplifier BGA7124 MMIC
The BGA7124 MMIC is a one-stage driver amplifier, offered in a low-
cost ultra small SOT908 leadless package. It delivers 25 dBm output
power at 1 dB gain compression and a superior performance for
various narrowband-tuned application circuits for frequencies up to
2700 MHz.
Features
`400 MHz to 2700 MHz frequency operating range
`16 dB small signal gain at 2 GHz
`27 dBm output power at 1 dB gain compression
`Integrated active biasing
`3.3 V / 5 V single supply operation
`Simple quiescent current adjustment
`1 μA shutdown mode
25NXP Semiconductors RF Manual 14th edition
1.4.4 Satellite outdoor unit, low noise block (LNB) for multiple users
Application diagram
horizontal
antenna
brb022
H low
IF out 1
low
3rd
stage
LNA
(4 x 2)
IF
SWITCH
oscillator
vertical
antenna
2nd
stage
LNA
1st
stage
LNA
3rd
stage
LNA
2nd
stage
LNA
1st
stage
LNA
BIAS IC
IF amplifier
IF
amplifier
IF out 2
IF
amplifier
V low
IF amplifier
H high
high oscillator
IF amplifier
V high
IF amplifier
BIAS IC
mixer
mixer
mixer
mixer
Recommended products
Function Product Package Type
Oscillator
RF bipolar
transistor
Wideband
transistor
SOT343 BFG424W
SOT343F BFG424F
RF transistor SiGe:C
transistor SOT343F BFU725F/N1
Function Product Package Type
1st stage
IF
amplifier
MMIC
General
purpose
amplifier
SOT363 BGA2711
SOT363 BGA2712
SOT363 BGA2748
SOT363 BGA2714
SOT363 BGA2717
IF gain block
SOT363 BGA2800
SOT363 BGA2801
SOT363 BGA2815
SOT363 BGA2816
SOT363 BGA2850
SOT363 BGA2865
SOT363 BGA2866
RF bipolar
transistor
Wideband
transistor
SOT343 BFG424W
SOT343F BFG424F
Function Product Package Type
IF switch RF diode PIN diode
various BAP64^
various BAP51^
various BAP1321^
various BAP50^
various BAP63^
^ = also available in ultra small leadless package SOD882T.
Function Product Package Type
Output
stage IF
amplifier
MMIC
General
purpose
amplifier
SOT363 BGA2709
SOT363 BGA2776
SOT363 BGM1014
SOT363 BGM1012
SOT363 BGA2716
IF gain block#
SOT363 BGA2800
SOT363 BGA2801
SOT363 BGA2815
SOT363 BGA2816
SOT363 BGA2850
SOT363 BGA2865
SOT363 BGA2866
RF bipolar
transistor
Wideband
transistor SOT343 BFG325
# = When using one of our IF gain blocks (BGA28xx) as output stage IF amplier,
you do not need an output inductor anymore.
Function Product Package Type
3rd stage LNA RF transistor SiGe:C
transistor SOT343F BFU725F/N1
Function Product Package Type
Mixer RF transistor SiGe:C
transistor SOT343F BFU725F/N1
Product highlight:
BGA28xx-family, IF gain blocks
The BGA28xx IF gain blocks are Silicon Monolitic Microwave
Integrated Circuit (MMIC) wideband amplifiers with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
Features
`Internally matched to 50 Ω
`Reverse isolation > 30 dB up to 2 GHz
`Good linearity with low second order and third order products
`Unconditionally stable (K > 1)
26 NXP Semiconductors RF Manual 14th edition
1.4.5 Satellite Multi Switch Box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV
Application diagram
brb023
output
amplifiers
input
amplifiers
LNB
input
amplifier
terrestrial
satellite dishe(s)
terrestrial
input
coax out to STB
coax out to STB
coax out to STB
coax out to STB
SWITCH MATRIX
FOR 4 × 4,
NEEDS 16
(SINGLE) PIN
DIODES
Recommended products
Function Product Package Type
Input
amplifier
terrestrial
MMIC
General
purpose
medium
power
amplifier
SOT89
BGA6289
BGA6489
BGA6589
BGA7024
SOT908 BGA7124
Function Product Package Type
Input
amplifier
LNB
MMIC
General
purpose
amplifier
SOT363 BGA2771
SOT363 BGA2776
SOT363 BGA2709
SOT363 BGM1012
RF bipolar
transistor
Wideband
transistor
SOT343 BFG325
SOT343 BFG425W
SOT143 BFG520
SOT143 BFG540
SiGe:C
transistor SOT343F BFU725F/N1
Function Product Package Type
Switch
matrix
RF diode PIN diode Various
BAP50^
BAP51^
BAP63^
BAP64^
BAP70^
BAP1321^
RF transistor SiGe:C
transistor SOT343F BFU725F/N1
^ = also available in ultra small leadless package SOD882T.
Function Product Package Type
Output
amplifier
MMIC
General
purpose
medium
power
amplifier
SOT89
BGA6289
BGA6489
BGA6589
BGA7024
SOT908 BGA7124
General
purpose
amplifier
SOT363 BGM1011
SOT363 BGM1013
SOT363 BGM1014
RF bipolar
transistor
Wideband
transistor
SOT223 BFG135
SOT223 BFG 591
SOT223 BFG198
SOT143 BFG540
SiGe:C
transistor SOT343F BFU725F/N1
Product highlight:
PIN diodes for switching matrix
Together with outstanding RF performance, this component simplify
design-in because of its extremely low forward resistance, diode
capacitance and series inductance. Significant board space saving
by supplying a range of high compact package options – including
SOD523, SOD323 and leadless SOD882T.
Features
`High isolation, low distortion, low insertion loss
`Low forward resistance (Rd) and diode capacitance (Cd)
`Ultra-small package options
27NXP Semiconductors RF Manual 14th edition
1.4.6 Digital Satellite Set Top Box (high definition)
Application diagram
brb435
Balun
Coax-in
(HD)
Satellite
System
on Chip
(SoC)
Recommended products
Function Product Package Type
LNA MMIC
Medium
Power
Amplifier
SOT89
BGA6289
BGA6489
BGA6589
Product highlight:
BGA6489 MMIC medium power amplifier
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband
medium power amplifier with internal matching circuit in a 4-pin
SOT89 plastic low thermal resistance SMD package.
The BGA6489 provides high-quality performance in satellite
applications from 250 MHz - 2.15 GHz.
Features
`20 dBm output power
`Single supply voltage needed
28 NXP Semiconductors RF Manual 14th edition
1.5.1
Mobile Platforms (GPS / TV on mobile / FM radio / Reference clock / CMMB^ / LTE)
^ = Chinese Multimedia Mobile Broadcasting (CMMB)
Application diagram
TUNER
brb402
MULTI-BAND
TRANSCEIVER
CMMB DECODER
FM RADIO
TRANSCEIVER
GPS RECEIVER
VCTCXO
CLK BUFFER
APPLICATION
GPS RF GPS BB
ANALOG TV RECEIVER
DECODER VIDEO PROCESSOR
BB
PROCESSING
LNA
LNA
LNA
LNA
LNA
Vref
Vref
1.5 Consumer Mobile
Note: looking for MoCA and Satellite Multi Switch Boxes? See chapter 1.4 TV, STB and Satellite.
Recommended products
Function Product Package Type
LTE LNA MMIC SiGe:C
MMIC SOT891 BGU7003
Function Product Package Type
FM radio
LNA Transistor
Wideband
transistor SOT323 BFR93AW
BFS505
SiGe:C MMIC SOT891 BGU7003
J-FET SOT23 BF510
Function Product Frequency Package Type
GPS LNA MMIC SiGe:C
MMIC
SOT891 BGU7003
SOT886 BGU7005
SOT886 BGU7007*
Function Product Package Type
CMMB LNA Transistor
Wideband
transistor SOT343 BFG425W
SiGe:C
transistor SOT343F BFU725F/N1
MMIC SiGe:C MMIC SOT891 BGU7003
* = check status at 3.1 new products, as this type has not been released yet for
mass production.
^ = also in SOD523
Function Product Package Type
TV on Mobile
LNA
Transistor
Wideband
transistor SOT343 BFG425W
SiGe:C
transistor SOT343F BFU725F/N1
MMIC SiGe:C MMIC SOT891 BGU7003
Function Product Frequency Package Type
TV on
Mobile
tuning diode
RF diode Varicap
diode^ SOT882T
BB202LX
BB178LX
BB179LX
BB181LX
BB182LX
BB184LX
BB187LX
Function Product Frequency Package Type
Reference
clock
CLK buffer Wideband
transistor SOT323 BFR93AW
VCTCXO Wideband
transistor SOT363A BFM520
Product highlight:
BGU7003 SiGe:C MMIC
Manufactured in NXP’s latest SiGe:C process, this high-frequency
RF MMIC delivers high-quality reception with extended battery life.
It is a cost-effective, silicon based alternative to GaAs devices, and
offers higher integration and easier design-in than discrete bipolar
transistors.
Features
`Low-noise, high-gain microwave MMIC
`Maximum stable gain = 19 dB at 1.575 GHz
`110-GHz fT-Silicon Germanium technology
`Optimized performance at low (5-mA) supply current
`Extemely thin, leadless 6-pin SOT891 package
`Integrated biasing and shutdown for easy integration
29NXP Semiconductors RF Manual 14th edition
1.5.2 A 2.4 & 5 GHz front-end for WLAN (802.11n Dual Concurrent)
Application diagram
bra502
antenna
low pass
lter
bandpass
lter
medium
power
amplier
Tx
Rx
APPLICATION
CHIP SET
PActrl
SPDT
SPDT
switch
LNA
Recommended products
Function Product Package Type
Medium
power
amplifier
MMIC Medium power
amplifier
SOT89 BGA7024
BGA7027
SOT908 BGA7124
BGA7127
Function Product Package Type
LNA RF Transistor SiGe:C
transistor SOT343F BFU725F/N1
MMIC SiGe:C MMIC SOT891 BGU7003
Product highlight:
medium power amplifier BGA7127 MMIC
The BGA7127 MMIC is a one-stage driver amplifier, offered in a
low-cost ultra small SOT908 leadless package. It delivers 28 dBm
output power at 1 dB gain compression and a superior performance
for various narrowband-tuned application circuits for frequencies up
to 2700 MHz.
Features
`400 MHz to 2700 MHz frequency operating range
`13 dB small signal gain at 2 GHz
`28 dBm output power at 1 dB gain compression
`Integrated active biasing
`3.3 V / 5 V single supply operation
`Simple quiescent current adjustment
`1 μA shutdown mode
30 NXP Semiconductors RF Manual 14th edition
1.5.3 2-way radio / family radio system
Application diagram
bra850
LOW
FREQUENCY
CHIP SET
SPDT
switch VCO
mixerfilterLNAfilterantenna
buffer
VCOdriverPAfilter
Recommended products
Function Product Package Type
SPDT Switch RF diode
Bandswitch
diode
SOD523 BA277
SOD323 BA591
PIN diode various BAP51^
various BAP1321^
Function Product Package Type
LNA
RF bipolar
transistor
Wideband
transistor
SOT23 PBR951
SOT323 PRF957
SOT323 PRF947
SiGe:C
transistor SOT343F BFU725F/N1
MMIC Low noise
wideband ampl.
SOT343R BGA2001
SOT343R BGA2003
Function Product Package Type
Driver
RF bipolar
transistor
Wideband
transistor
SOT323 PRF957
SOT23 PBR951
MMIC
Amplifier SOT363 BGA2031/1
Gen. purpose
wideband ampl.
SOT363 BGA2771
SOT363 BGA2776
^ = also available in ultra small leadless package SOD882T
Function Product Package Type
Mixer
RF bipolar
transistor
Wideband
transistor
SOT343 BFG410W
SOT343 BFG425W
SOT343 BFG480W
MMIC Linear mixer SOT363 BGA2022
Function Product Package Type
Buffer RF bipolar
transistor
Wideband
transistor
SOT23 PBR951
SOT323 PRF957
SOT323 PRF947
SOT416 PRF949
Function Product Package Type
Power
amplifier MMIC
Gen. purpose
wideband
ampl.
SOT89
BGA6289
BGA6489
BGA6589
BGA7024
BGA7027
Function Product Package Type
VCO Varicap
diodes
VCO varicap
diodes
SOD523 BB198
SOD323 BB156
Product highlight:
PRF957 silicon NPN UHF wideband transistor
Silicon NPN UHF wideband transistor in a surface mount 3-pin
SOT323 package is primarily intended for wideband applications
in the RF front end. The transistor is widely built as LNA, power
amplifier, driver and buffer in the UHF band application.
Features
`Small 3-pin plastic surface mounted package
`Low noise (1.3 dB at 1 GHz) and high power gain (15 dB at 1 GHz)
`Gold metallization ensures excellent reliability
31NXP Semiconductors RF Manual 14th edition
1.5.4 DECT front-end
Application diagram
bra911
CHIPSETswitch
LNAantenna
PAfilter
Recommended products
Function Product Package Type
RF Switch RF diode PIN Diode
various BAP51^
various BAP55^
various BAP142^
various BAP63^
various BAP64^
various BAP1321^
^ = also available in ultra small leadless package SOD882T.
DECT in-house base station
Application diagram
bra910
CHIPSET
SPDT
switch VCO
mixerfilterLNA filterantenna
buffer
VCOdriverPAfilter
Recommended products
Function Product Package Type
RF Switch RF diode PIN Diode
various BAP51^
various BAP55^
various BAP142^
various BAP63^
various BAP64^
various BAP1321^
Function Product Package Type
Mixer
RF bipolar
transistor
Wideband
transistor
SOT343 BFG410W
SOT343 BFG425W
SOT343 BFG480W
SiGe:C
transistor SOT343F BFU725F/N1#
MMIC Linear mixer SOT363 BGA2022
# = also for 5.8 GHz
Product highlight:
BAP64xx PIN diode for RF switch
Operating up to 3 GHz with high-voltage handling capabilities,
NXP’s PIN diodes are ideal for a wide range of wireless
communication application. Together with outstanding RF
performance, this component simplify design-in because of its
extremely low forward resistance, diode capacitance and series
inductance.
Significant board space saving by supplying a range of high
compact package options – including SOD523, SOD323 and
leadless SOD882T.
Features
`Operate up to 3 GHz
`High isolation, low distortion, low insertion loss
`Low forward resistance (Rd) and diode capacitance (Cd)
`Ultra-small package options
32 NXP Semiconductors RF Manual 14th edition
1.6 Automotive & Industrial
1.6.1 Active antenna
Application diagram
Recommended products
Function Product Package Type
1st stage
LNA MMIC Low noise wideband
amplifier
SOT343R BGA2001
SOT343R BGA2003
Function Product Package Type
2nd stage
LNA MMIC General purpose
wideband amplifier
SOT363 BGM1013
SOT363 BGM1011
SOT363 BGA2715
SOT363 BGA2748
Function Product Package Type
3rd stage
LNA
RF transistor SiGe:C transistor SOT343F BFU725F/N1
MMIC SiGe:C MMIC SOT891 BGU7003
Product highlight:
BGU7003 SiGe:C MMIC
Manufactured in NXP’s latest SiGe:C process, this high-frequency
RF MMIC delivers high-quality reception with extended battery life.
It is a cost-effective, silicon based alternative to GaAs devices, and
offers higher integration and easier design-in than discrete bipolar
transistors.
Features
`Low-noise, high-gain microwave MMIC
`Maximum stable gain = 19 dB at 1.575 GHz
`110-GHz fT-Silicon Germanium technology
`Optimized performance at low (5-mA) supply current
`Extemely thin, leadless 6-pin SOT891 package
`Integrated biasing and shutdown for easy integration
brb215
1st
stage
LNA
antenna
2nd
stage
LNA
3rd
stage
LNA
CHIPSET
Note: looking for GPS? See chapter 1.5.1 Handset.
33NXP Semiconductors RF Manual 14th edition
1.6.2 Remote keyless entry, RF generic front-end with dedicated antenna for
reception and transmission
bra851
LOW
FREQUENCY
CHIP SET
VCO
mixer
receiver
transmitter
filterLNAfilter
antenna
antenna
buffer
LOW
FREQUENCY
CHIP SET
VCOdriverPAfilter
Recommended products
Function Product Package Type
LNA
RF bipolar
transistor
Wideband
transistor
SOT23 PBR951
SOT323 PRF957
SOT323 PRF947
MMIC
Low noise
wideband ampl. SOT343R
BGA2001
BGA2002^
BGA2003
SiGe:C MMIC SOT891 BGU7003
Function Product Package Type
Driver
RF bipolar
transistor
Wideband
transistor
SOT323 PRF957
SOT23 PBR951
MMIC
Amplifier SOT363 BGA2031/1
Gen. purpose
wideband ampl.
SOT363 BGA2771
SOT363 BGA2776
Function Product Package Type
VCO Varicap
diodes
VCO varicap
diodes
SOD323 BB148
SOD323 BB149A
SOD523 BB198
SOD323 BB156
^ = automotive qualied
Function Product Package Type
Mixer
RF bipolar
transistor
Wideband
transistor
SOT343 BFG410W
SOT343 BFG425W
SOT343 BFG480W
MMIC Linear mixer SOT363 BGA2022
Function Product Package Type
Buffer RF bipolar
transistor
Wideband
transistor
SOT23 PBR951
SOT323 PRF957
SOT323 PRF947
SOT416 PRF949
Function Product Package Type
Power
amplifier
RF bipolar
transistor
Wideband
transistor
SOT323 PRF957
SOT23 PBR951
MMIC
Amplifier SOT363 BGA2031/1
Gen. purpose
wideband
ampl.
SOT363 BGA2771
SOT363 BGA2776
SOT908 BGA7124
Product highlight:
NXP varicap diodes for VCO
Varicap diodes are principally used as voltage varicap capacitors with
their diode function a secondary option. These devices are ideal for
voltage controlled oscillators (VCO) in ISM band applications.
Features
` Excellent linearity
` Excellent matching
` Very low series resistance
` High capacitance ratio
Application diagram
34 NXP Semiconductors RF Manual 14th edition
1.6.3 Tire pressure monitoring system
Application diagram
Recommended products
Function Product Package Type
PA RF bipolar
transistor
Wideband
transistor
SOT23 BFR92A
SOT323 BFR92AW
SOT23 BFR94A^
SOT323 BFR93AW
SOT323 BFR94AW^
Function Product Package Type
Driver
RF bipolar
transistor
Wideband
transistor
SOT323 PRF957
SOT23 PBR951
MMIC
Amplifier SOT363 BGA2031/1
Gen. pupose
wideband ampl.
SOT363 BGA2771
SOT363 BGA2776
Function Product Package Type
VCO Varicap diodes VCO varicap diodes SOD523 BB198
SOD323 BB156
^ = automotive qualied
Product highlight:
BFR94AW silicon NPN transistor
It is designed for use in RF amplifiers, mixers and oscillators
with signal frequencies up to 1 GHz. This silicon NPN transistor
encapsulated in a plastic SOT323 (S-mini) package. The BFR92AW
uses the same crystal as the SOT23 version, BFR92A.
Features
`High power gain
`Gold metallization ensures excellent reliability
`SOT323 (S-mini) package
`AUTOMOTIVE QUALIFIED
driver VCO
PA
filter
antenna
SENSOR
brb216
35NXP Semiconductors RF Manual 14th edition
1.6.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL)
Application diagram
bra501
AGC &
hum filter
FM input
filter
& AGC
AM LNA
IF limiter
amplifier FM de-
modulator
1st
mixer
oscillator
IF
bandpass
filter 2nd
mixer
1st
mixer 2nd
mixer
oscillator
FM MPX
AM audioDET
f V
variable
BW filter
RF input
filter IF
amplifier AM de-
modulator
IF
bandpass
filter
IF
bandpass
filter
Recommended products
Function Product Package Type
AM LNA RF transistor JFET SOT23 BF862
Function Product Package Type
FM input
filter & AGC RF diode
Varicap
diode
SOT23 BB201^
SOT23 BB207
PIN diode SOD523 BAP70-02
SOD323 BAP70-03
^ = OIRT
Function Product Package Type
AGC &
hum filter RF diode PIN diode SOT363 BAP70AM
Function Product Package Type
Oscillator RF diode Varicap
diode
SOD323 BB156
SOD523 BB208-02
Note 1:
All these recommended discrete products are applicable for
NICEPACS, CCC and DDICE: NICE:TEA6840H,TEA6845H,TEA684
6H, NICEPACS:TEA6848H,TEA6849H; CCC:TEF6901H,TEF6903H;
DDICE:TEA6721HL. All these recommended discrete products are
applicable excluding AM LNA in: DICE2:TEF6730HWCE.
Note 2:
Phone and portable radio (IC:TEA5767/68) use varicap BB202 as FM
oscillator.
Product highlight:
BF862 Junction Field Effect Transistor
Our Tuning component portfolio contains excellent products for car
radio reception applications, playing a vital role for in-vehicle media
platforms. The NXP devices for this application ensure excellent
reception quality and ease of design in. Performance is demonstrated
in reference designs.
High performance Junction Fet BF862, specially designed for car
radio AM amplifiers.
Features
` High transition frequency and optimized input capacitance for
excellent sensitivity
`High transfer admittance resulting in high gain
` Encapsulated in the versatile and easy to use SOT23 package
36 NXP Semiconductors RF Manual 14th edition
1.6.5 E-metering, RF generic front-end with a single antenna / ZigBee
Application diagram
bra850
E-METERING
CHIP SET
SPDT
switch VCO
mixerfilterLNAfilterantenna
buffer
VCOdriverMPAfilter
Recommended products
Function Product Package Type
SPDT Switch RF diode
Bandswitch
diode
SOD523 BA277
SOD323 BA591
PIN diode various BAP51^
various BAP1321^
Function Product Package Type
LNA
RF transistor
SiGe:C transistor
SOT343F BFU725F /N1
MMIC
Low noise
wideband ampl.
SOT343R BGA2001
SOT343R BGA2003
SiGe:C MMIC SOT891 BGU7003
Function Product Package Type
Driver
RF bipolar
transistor
Wideband
transistor SOT343 BFG425W
MMIC
Amplifier SOT363 BGA2031/1
Gen. purpose
wideband ampl.
SOT363 BGA2771
SOT363 BGA2776
^ = also available in ultra small leadless package SOD882T.
Function Product Package Type
Mixer
RF bipolar
transistor
Wideband
transistor
SOT343 BFG410W
SOT343 BFG425W
SOT343 BFG480W
MMIC Linear mixer SOT363 BGA2022
Function Product Package Type
Buffer RF bipolar
transistor
Wideband
transistor
SOT23 PBR951
SOT323 PRF957
SOT323 PRF947
SOT416 PRF949
Function Product Package Type
Medium power
amplifier
RF bipolar
transistor
Wideband
transistor SOT343 BFG21W
MMIC
Gen. purpose
wideband
ampl.
SOT89
BGA6289
BGA6489
BGA6589
SOT908 BGA7124
SOT908 BGA7127
Function Product Package Type
VCO Varicap
diodes
VCO varicap
diodes
SOD523 BB198
SOD323 BB156
Product highlight:
BGA7127 MMIC medium power amplifier
The BGA7127 MMIC is a one-stage driver amplifier, offered in a
low-cost ultra small SOT908 leadless package. It delivers 27 dBm
output power at 1 dB gain compression and a superior performance
for various narrowband-tuned application circuits for frequencies up
to 2700 MHz.
Features
`400 MHz to 2700 MHz frequency operating range
`16 dB small signal gain at 2 GHz
`27 dBm output power at 1 dB gain compression
`Integrated active biasing
`3.3 V / 5 V single supply operation
`Simple quiescent current adjustment
`1 μA shutdown mode
37NXP Semiconductors RF Manual 14th edition
1.6.6 RF Plasma Lighting
Application diagram
brb436
oscillator MPA HPA
RF (plasma) bulb
CONTROLLER
Recommended products
Function Type frange
(MHz)
PL
W
Gp
dB Mode of operation
driver BLF571 0 - 1000 20 27.5 1-TONE; 2-TONE; CW
final BLF573S 0 - 1000 300 27.2 1-TONE; 2-TONE; CW
final BLF574 0 - 1000 400 26.5 1-TONE; 2-TONE; CW
final BLF578 0 - 1000 1200 24 1-TONE; PULSED RF
0 - 1000 1000 24 1-TONE; CW
final BLF645 0 - 1300 100 18 2-TONE
0 - 1300 100 17 CW
final BLF 278 108 - 225 250 16 class AB
final BLF 177 28 - 108 150 19 class B
Function Product Package Type
MPA (medium
power
amplifier)
MMIC
MMIC SOT89
BGA6289
BGA6489
BGA6589
SiGe:C MMIC
SOT908 BGA7124
SOT89 BGA7024
SOT908 BGA7127
SOT89 BGA7027
SOT908 BGA7130*
BGA7133*
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Product highlight:
NXP's 50 V high voltage LDMOS process enables highest power
at unprecedented ruggedness levels necessary for this kind of
application.
BLF578: 1000 W CW operation - highest power LDMOS
Features
`Highest power device
`Unprecedented ruggedness
`Low-thermal resistance design for very reliable operation
`Very consistent device performance
`Broadband device for flexible use
38 NXP Semiconductors RF Manual 14th edition
1.6.7 Medical Imaging
Application diagram
Recommended products
Function Type frange
(MHz)
PL
W
Gp
dB
driver BLF871(S) 0 - 1000 100 21
driver BLF881 0 - 1000 120 21
driver BLF571 0 - 1000 20 27.5
final BLF573S 0 - 1000 300 27.2
final BLF574 0 - 1000 400 26.5
final BLF578 0 - 1000 1200 24
final BLF645 0 - 1300 100 18
Product highlight:
NXP’s line of 50 V High voltage LDMOS devices enable highest
power output and feature unequalled ruggedness for pulsed
operation in MRI and NMR applications. The high power densities
enable very compact amplifier design.
Features
`Best broadband efficiency
`Highest power (density) devices
`Unrivalled ruggedness
`Very consistent device performance
brb434
RF coils
Gradient coils
Magnet
RF amplifier
X GRADIENT
AMPLIFIER
Y GRADIENT
AMPLIFIER WAVEFORM
GENERATOR
Z GRADIENT
AMPLIFIER
RF
ELECTRONICS COMPUTER
ADC
IMAGE
DISPLAY
39NXP Semiconductors RF Manual 14th edition
1.6.8 RF Microwave furnace application
Application diagram
brb418
antenna
MPAoscillator HPA
isolator
CONTROLLER
Recommended products
Function Type frange
MHz
PL(AV)
W
nD
%
GP
dB Availability
Driver BLF6G24-12 2000 - 2200 40 27.5 17 Q3 2010
Final BLF6G24-180PN 2000 - 2200 50 27.5 17.5 Q3 2010
Final BLF7G24L (S)-250P 2500 - 2700 20 25 16.5 Q3 2010
Product highlight:
NXP’s 6th and 7th generation LDMOS technology together with
advanced package concepts enable best in class performing power
amplifiers. The unsurpassed ruggedness and low thermal resistance
in connection with the high intrinsic efficiency make these transistors
ideally suited for the furnace application.
Features
`Excellent ruggedness
`Very consistent device performance
`Low thermal resistance design for unrivalled reliability
`Very easy to design with
Function Product Package Type
MPA (medium
power
amplifier)
MMIC
MMIC SOT89
BGA6289
BGA6489
BGA6589
SiGe:C MMIC
SOT908 BGA7124
SOT89 BGA7024
SOT908 BGA7127
SOT89 BGA7027
SOT908 BGA7130*
BGA7133*
* = check status at 3.1 new products, as this type has not been released yet for mass production.
40 NXP Semiconductors RF Manual 14th edition
2.1 Get the fastest TTFF^ with GPS LNAs that use proven QUBiC4X SiGe:C
^ TTFF = Time-To-First-Fix
NXP GPS LNAs BGU7003, BGU7005, BGU7006 and BGU7007
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology and available in
the industry’s smallest package, this highly integrated GPS LNAs reduce cost while delivering
better sensitivity, greater immunity against jamming signals, and higher linearity.
Features
`Requires only 4 external components (including decoupling)
to build complete GPS front-end.
`Requires only one external matching component
`Low current consumption (5 mA)
`Low noise figure (NF): 0.8 - 0.9 dB at 1.575 GHz
`Low current consumption in power-down mode (<1 μA)
`ESD protection on all pins
`Supply voltage: max 2.85 V, optimized for 1.8 V
`Proven, robust QUBiC4X SiGe:C process technology
(fT = 110 GHz)
These LNAs designed for GPS receiver applications, are
produced in NXP’s industry-leading QUBiC4X process, a
0.25-µm SiGe:C technology. They have very low noise figures
and superior linearity performance, so they help to improve
overall sensitivity, which in turn leads to faster
Time-To-First-Fix (TTFF) and better tracking.
The proven QUBiC4X process improves overall RF performance
and means the LNAs are less expensive and offer higher, more
flexible performance than their GaAs counterparts.
They restore sensitivity, provide greater immunity against
out-of-band cellular signals, reduce filtering requirements,
and lower overall cost. They can be placed close to the GPS
antenna, minimizing the noise figure. Additional gain amplifies
the GPS signal and raises the on-board signal-to-jammer ratio.
The GPS receiver can be put close to the primary phone
antenna, for the best GSM/UMTS performance, while the GPS
antenna can be placed far away. This improves antenna-to-
antenna isolation and results in higher performance.
2. Technologies & focus products
@ 1.575 GHz
Type Package
supply
voltage supply current insertion power
gain
noise
figure input power at 1 dB gain compression input third-order intercept point
Vcc Icc |s21|2NF PI(1dB) IP3i
V mA dB dB dBm dBm
Min Max Min Typ Max Min Typ Max Typ
Vcc =
1.8 V,
Min
Vcc =
1.8 V,
Typ
Vcc = 2.5 V,
Icc = 5 mA
Vcc =
2.85 V,
Min
Vcc =
2.85 V,
Typ
Vcc =
1.8 V,
Min
Vcc =
1.8 V,
Typ
Vcc = 2.5 V,
Icc = 5 mA
Vcc =
2.85 V,
Min
Vcc =
2.85 V,
Typ
BGU7003 SOT891 2.2 2.85 3 - 15 16 18.3 20 0.8 - - -20 - - - - 0 - -
BGU7005 SOT886 1.5 2.85 - 4.5 - - 16.5** - 0.9 -14 -11 - -11 -8 5 9 - 5 12
BGU7006* WLCSP*** 1.5 2.85 - 3.8 - - 16.5** - 0.9 -14 -11 - -12 -9 1 4 - 5 9
BGU7007* SOT886 1.5 2.85 - 4.8 - - 18**** - 0.9 -14 -11 - -11 -8 5 9 - 5 12
* = check status at 3.1 new products, as this type has not been released yet for mass production.
** = 16.5 dB without jammer / 17.5 dB with jammer
*** = 5 solder bumps, pitch 220 µm
**** = 18 dB without jammer / 19 dB with jammer
41NXP Semiconductors RF Manual 14th edition
2.2 Always the right match with our latest 6th and 7th generation SiGe:C
wideband transistors
Meet the trend towards higher frequencies. With NXP Semiconductors’ latest SiGe:C microwave
NPN transistors, you get high switching frequencies plus extremely high gain and low noise. All this
in an easy-to-use SOT343F package. It’s the ideal solution for applications up to 30 GHz.
Benefits
`Plastic surface-mount SOT343F package
`SiGe:C process delivers high switching frequency from
a silicon-based device
`Cost-effective alternative to GaAs devices
`RoHS compliant
Applications
`Low noise amplifier (LNA) for microwave communications
systems
`2nd stage LNA and mixer in direct broadcast satellite (DBS)
low-noise blocks (LNBs)
`GPS systems
`Satellite radio
`WLAN/WiMAX and CDMA applications, LTE
`DVB, CMMB
The NPN microwave transistors deliver an unbeatable blend of
high switching frequency, high gain and very low noise. Thanks
to the ultra-low noise figures, they are perfect for your sensitive
RF receivers particularly those for high-performance cell
phones. Alternatively, with the high cut-off frequencies, they
are your ideal solution for microwave applications in the 10 GHz
to 30 GHz range, such as satellite TV receivers and automotive
collision avoidance radar.
These new 6th and 7th generation SiGe:C wideband transistors
get their outstanding performance from our innovative silicon-
germanium-carbon (SiGe:C) BiCMOS process. QUBiC4X was
designed specifically to meet the needs of real-life, high-
frequency applications and delivers an unrivalled fusion of
high power gain and excellent dynamic range. It combines the
performance of gallium-arsenide (GaAs) technologies with the
reliability of a silicon-based process. In addition, with these
transistors, you don’t need a biasing IC or negative biasing
voltage. So it’s a much more cost-effective solution than GaAs
pHEMT devices.
Full portfolio overview of 6th and 7th generation RF
wideband transistors at chapter 3.3.1
42 NXP Semiconductors RF Manual 14th edition
2.3 NXP Medium-Power MMICs BGA7xxx for broadband applications
Broadband QUBiC4 MMICs for all 400-2700 MHz applications
Produced in NXP’s proven QUBiC4 Si BiCMOS process, these MMICs bring improved thermal
performance and added-value features to all 400-2700 MHz applications − at a lower cost than
GaAs versions.
tailor gain or P1dB for specific platform requirements. Between
475-625 MHz and 1.15-1.5 GHz gain flatness is unrivalled. NXP
Medium Power MMICs operate at low current consumption
and offer a fast shut-down function to save as much power
as possible. With ESD protection, active biasing and SOT89
package availability, design-in is simplified and requires a
minimum of external components.
Base station
The high power level of these MMICs makes them an excellent
choice for mobile-infrastructure applications. They offer the
highest gain overall all base stations frequencies. The quiescent-
current feature allows for high efficiency and linearity in Class-AB
operation. The bias circuitry delivers a stable performance over
temperature and supply variations. The integrated shutdown
function is a power-saving feature and can be used for fast
shutdown. The MMICs can be tuned for any band between
VHF and 2.7 GHz.Unbeatable thermal performance (30 °C/W)
improves overall quality and reliability.
eMetering
These MMICs are also very well suited to eMetering applications
in the 900-2400 MHz ISM band. High integration and single-
supply operation mean that the MMICs can be combined with
just a few other components to create a full-featured solution.
The MMICs can be operated on battery power (with an energy-
saving shutdown mode) and are tunable between Class A and
AB. They can also work on a power-line network, so they support
gas metering with or without a power connection. The built-
in reliability and quality of a silicon-based process provides
longevity, as does the improved ESD performance.
Features
`ESD protection at all pins
`Single-supply operation (3.3 or 5 V)
`Integrated active biasing
`Fast shutdown
`Quiescent current adjustment
`Two package options, smallest leadless package (3 x 3 mm)
and leaded SOT-89
Applications
`Wireless infrastructure (base station, repeater)
`eMetering
`Broadband CPE (MoCA)
`Satellite Master Antenna TV (SMATV)
`Industrial applications
`W-LAN / ISM / RFID
Manufactured in NXP’s breakthough QUBiC4 process, these
MMICs deliver a comparable level of RF performance as their
GaAs equivalents, but at a lower cost and with additional
features, like thermal performance and ESD robustness. The
QUBiC4 process makes it possible to support even more
features, including active biasing, quiescent adjustment, VGA
interfaces, and a power-saving shutdown mode. To increase
design flexibility, all the MMICs support single-supply (3.3/5 V)
operation. And, to save space, they are available in the smallest
package size (3 x 3 mm) and with leadless options.
MoCA
These MMICs are exceptionally well-suited for use a MoCA
(Multimedia over Cable Alliance) PA in both the STB and in PC
dongles. The MMICs offer the system designer the ability to
Supply Shutdown control RF performance RF performance
Type Package fVcc Icc VI(D)L(SHDN) VI(D)H(SHDN) II(D)L(SHDN) Typ @ f = 940 MHz Typ @ f = 1960 MHz
Typ Typ Max Min Max Min Max Typ Gp PL(1dB) OIP3 NF Gp PL(1dB) OIP3 NF
(MHz) (V) (mA) (mA) (V) (V) (V) (V) (µA) dB dBm dBm dB dB dBm dBm dB
BGA7124 SOT908 leadless 400 - 2700 5 130 200 0 0.7 2.5 Vbias 4 22 25 38 5 16 24 38 5
BGA7024 SOT89 leaded 400 - 2700 5 110 - - - - - - 22 24 38 3 16 25 38 4
BGA7127* SOT908 leadless 400 - 2700 5 180 325 0 0.7 2.5 Vbias 4 20 28 44 3 13 28 43 5
BGA7027* SOT89 leaded 400 - 2700 5 170 - - - - - - 19 28 41 3 12 28 43 4
BGA7130* SOT908 leadless 400 - 2700 5 - - 0 0.7 2.5 Vbias 4 18 30 45 4 12 30 45 4
BGA7133* SOT908 leadless 400 - 2700 5 - - 0 0.7 2.5 Vbias 4 18 33 46 4 12 33 47 4
The specications of the BGA7130 and BGA7133 are target specications until development is completed.
* = check status at 3.1 new products, as this type has not been released yet for mass production.
43NXP Semiconductors RF Manual 14th edition
2.4 Low-noise LO generators for microwave & mmWave radios
NXP LO generators (integrated VCO/PLL) TFF11xxxHN
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology, these highly integrated,
alignment-free LO generators are low power consumption and low-spurious solutions that simplify
design-in and lower the total cost of ownership.
These low-noise local-oscillator (LO) generators, optimized
for use in many different microwave applications between
7 and 15 GHz, deliver highly accurate performance in a small
footprint. They require no alignment or frequency modification
on the production line, so they simplify manufacturing. High
integration saves board space and makes design-in easier,
for lower overall cost and faster development, enabling quick
time-to-market.
Since these ICs are manufactured in NXP’s industry-leading
QUBiC4X SiGe:C process, they offer better overall RF
performance, are more robust than their GaAs equivalents,
and consume much less power. The process technology also
enables higher integration, for added features. NXP owns the
industrial base for production (wafer fab, test, assembly),
so volume supplies can be assured.
The TFF1003HN is the basis for the entire family of LO
generators. It has VCO coverage of 12.8 to 13.05 GHz and
accepts input signals from 50 to 816 MHz. The divider can be set
for 16, 32, 64, 128, or 256, and the output level is -5 dBm with a
stability of ±2 dB. The family of LO generators is completed by
a range of 18 different devices operating in a center frequency
ranging from 7 to 15 GHz. The RF performance of all these
devices is consistent with the TFF1003HN.
All the LO generators have very low power dissipation typical
330 mW, and all are available in a space-saving 24-pin HVQFN
package.
Features
`TFF11xxxHN family: Lowest noise LO generators for
a full family in range 7 to 15 GHz
`Maximum power consumption for all types, typical 330 mW
`Phase-noise compliant with IESS-308 (Intelsat)
`Proven QUBiC4X SiGe:C technology (120-GHz fT process)
`External loop filter
`Differential input and output
`Lock-detect output
`Internally stabilized voltage reference for loop filter
`24-pin HVQFN (SOT616-1) package
Applications : TFF11xxxHN family
`Industrial/Medical Test and Measurement Equipment
`Electronic Warfare (EW)
`Electronic Countermeasures (ECM)
`Point to Point
`Point to Multi-Point
`Satellite Communication
Full portfolio overview of low noise LO generators for
general microwave applications at chapter 3.4.2
44 NXP Semiconductors RF Manual 14th edition
2.5 Complete satellite portfolio for all LNB architectures
NXP satellite LNB devices BFU725F/N1 and BGA28xx
Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are
manufactured in NXP’s groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technology and are
the latest additions to NXP’s leading portfolio for satellite LNB.
BFU725F/N1 RF transistor
The BFU725F/N1 is a RF transistor that can be used in the
LNA part and as a mixer for a DBS LNB. In either application,
it delivers low power consumption, good noise and linearity,
and the lowest cost compared to GaAs pHEMT solution.
BFU725F/N1 as mixer in Ku-band LNB
`Power consumption: 2 mA at 5 V
`Single supply: 3, 5, or 6 V
`Noise, Single Side Band: 7 dB (including BPF)
`Linearity: better than 0 dBm OIP3
`Gain, SSB: 2 dB (including BPF)
`RF/LO/IF Match: better than 12/15/18 dB
`Broadband unconditionally stable
`LO-RF isolation better than 18 dB
BFU725F/N1 as 2nd or 3rd stage LNA in Ku-band LNB
`Power consumption: 11 mA at 5 V
`Single supply: 3, 5, or 6 V
`Noise, SSB: typically 1.3 dB
`Linearity: better than 10 dBm OIP3
`Gain, SSB: typically 10.5 dB
`In/Out match: better than 7/12 dB
`Broadband unconditionally stable
BFU725F/N1 as LNA for C-band LNB
`Power consumption: 7 mA at 5 V
`Single supply: 5 or 6 V
`Noise: 0.65 dB
`Linearity: better than 10 dBm OIP3
`Gain: 15 dB
`In/Out Match: better than 10 dB
`Broadband unconditionally stable
BGA28xx MMICs as IF amplifiers (1st stage & output stage)
For compatibility with existing designs, the series uses a
market standard package, the SOT363 and the pin-compliant
SOT363F package. The pinning is identical to NXP’s current
gain block family, and the blocks deliver similar noise figures.
New features include flatter gain, a gain slope of 0.5 dB,
improved P1dB vs. Icc, and no necessity of an output inductor
(also not at high P1dB models).
`Internally matched at 50 Ω
`Gain slope 0.5 dB
`Single supply current
- At 3.3 V or 5 V
`Reverse isolation: >30 dB up to 2 GHz
`Best-in-class linearity vs current consumption
`Noise figure: 4 to 6 dB at 1 GHz
`Unconditionally stable (K > 1)
`High compression point models work without output inductor
`6-pin SOT363 plastic SMD package
These products – the BFU725F/N1 transistor for LNA and
mixer applications, and the BGA28xx series of MMICs
for IF amplifiers – are the most recent additions to NXP’s
45NXP Semiconductors RF Manual 14th edition
Quick reference satellite IF gain MMICs
Satellite outdoor unit, LNB for multiple users
horizontal
antenna
brb022
H low
IF out 1
low
3rd
stage
LNA
(4 x 2)
IF
SWITCH
oscillator
vertical
antenna
2nd
stage
LNA
1st
stage
LNA
3rd
stage
LNA
2nd
stage
LNA
1st
stage
LNA
BIAS IC
IF amplifier
IF
amplifier
IF out 2
IF
amplifier
V low
IF amplifier
H high
high oscillator
IF amplifier
V high
IF amplifier
mixer
mixer
mixer
mixer
Type Package
@ Fu@ 1 GHz Gain (dB) @
VsIs@-3dB NF Gain OIP3 250 950 1550 2150
(V) (mA) (GHz) (dB) (dB) (dBm) (MHz) (MHz)
(MHz) (MHz)
BGA2800 SOT363 3.3 9.7 >3 3.4 20.2 11.5 20.0 20.2 20.6 20.6
BGA2801 SOT363 3.3 12.4 3.0 3.6 22.1 13.6 22.3 22.1 23.0 23.8
BGA2815 SOT363 3.3 16.4 >3 3.4 25.4 18.2 26.2 25.4 25.5 25.8
BGA2816 SOT363 3.3 19.6 2.3 2.8 31.2 16.1 32.0 31.2 30.6 28.7
BGA2850 SOT363 5.0 7.7 >3 3.9 23.3 8.7 22.9 23.2 23.9 24.0
BGA2865 SOT363 5.0 22.7 2.6 3.7 31.9 20.9 31.2 31.8 32.6 31.4
BGA2866 SOT363 5.0 15.4 >3 3.6 23.4 17.7 23.0 23.3 24.0 24.3
No output inductor necessary when using the new BGA28xx IF Gain blocks at the output stage.
leading portfolio for satellite LNB. They join the other
discrete products, including oscillators, amplifiers, switches,
and biasing, to provide complete coverage for all LNB
architectures.
Since the transistor and the MMICs are manufactured in NXP’s
industry-leading QUBiC4X SiGe:C and QuBiC4+ process,
they offer better overall RF performance and are more robust
than their GaAs equivalents for the lowest cost. The process
technology also enables higher integration, for added features.
NXP owns the industrial base for production (wafer fab, test,
assembly), so volume supplies can be assured.
NOTE: Also look at chapter 1.4.4 satellite outdoor unit.
46 NXP Semiconductors RF Manual 14th edition
2.6 VSAT, 2-way communication via satellite
Design a Ku-band VSAT transmitter or transceiver that meets IESS-308
NXP Ku-band RF LO Generator IC’s for VSAT
The TFF100xHN family are Ku-band RF PLLs, with integrated VCO intended for low phase-noise
Local Oscillator (LO) circuits in Ku-band VSAT transmitters and transceivers. Manufactured in a high-
performance SiGe:C process, it delivers extremely low phase noise and complies with the IESS-308
from Intelsat.
Features
`Phase noise compliant with IESS-308 (Intelsat)
`Differential input and output
`Divider settings at 16, 32, 64, 128 or 256
`Lock-detect output
`SiGe:C technology (120-GHz fT process)
`HVQFN24 (SOT616-1) package
Applications
`VSAT block-up-converters
`VSAT down conversion
`Local oscillator signal generation
VSAT networks are commonly used to transmit narrowband
data, such as point-of-sale transactions for credit cards, or to
transmit broadband data that supports satellite Internet access
to a remote location, VoIP, or video.
The network typically consists of a dish antenna, an outdoor
unit, and an indoor unit. The outdoor unit is used for
frequency translation between RF and IF, and usually includes
a microwave-based uplink/downlink separator, a Low Noise
Block (LNB) for receiving the downlink signals, and a Block Up
Converter (BUC).
The VSAT IC’s can be used to create the LO generator for a
linear BUC (meaning the IF or RF conversion is done by mixing
with an LO).
To enable precise frequency and time multiplexing, the
downlink signal provides an accurate frequency reference of 10
MHz. The indoor unit frequency multiplexes this with the uplink
IF signal, and the LO signal in the BUC needs to be frequency
locked to the reference.
The TFF100xHN IC’s are housed in a 24-pin HVQFN (SOT616-1)
package. The pins have been assigned for optimal performance.
Three voltage domains are used to separate the block on the
IC, and two pins for each output (OUT-P) and OUT-N) have been
reserved to match a typical layout using a linewidth of Z = 50 Ω
microstrip on a 20-mil RO4003 board (1.1 mm).
The ground pins have been placed next to the reference input
and the output, and, to minimize crossings in the application,
all the supply pins are on the same side of the IC.
47NXP Semiconductors RF Manual 14th edition
Typical VSAT network
Satellite
HUBVSATs
Satellite
HUBVSATs
Complete LO generator for linear BUC with TFF1003HN
brb200
LF LF
/1305
(/960)
156.25 kHz
(208.83 kHz)
13.05 GHz settings
(12.8 GHz settings)
12.8~13.05
on-chip VCO203.90625 (200) MHz
clean up PLL build around VCXO
narrow bandwidth
203.90625 (200) MHz > 13.05 (12.8) GHz
TFF1003 @ DIV = 64 PLL with on-chip VCO
TFF1003HN
band
pass
filter
band
pass
filter
solid
state
power
amp
amp
/64
(/48) PFD PFD
from
indoor
unit
synchronized QPSK data on L band carrier in the range 0.95~1.45 GHz (extended range: 0.95~1.7 GHz)
10 MHz
/64
mixer
Type Package fIN(REF)
VCC ICC
PLL phase noise
@ N=64 @ 100 kHz
PLL Output buffer Input
fo(RF)
PoRLout(RF) Si
Typ Max Typ Max Min
MHz V mA dBc/Hz (GHz) dBm dB dBm
TFF1003HN SOT616 50~815 3.3 100 -92 12.8~13.05 -5 -10 -10
TFF1007HN SOT616 230.46~234.38 3.3 100 -104 14.75~15 -3 -10 -10
48 NXP Semiconductors RF Manual 14th edition
2.7 NXP CATV C-family for the Chinese SARFT standard
Connecting people, protecting your network
Specially designed for the Chinese Hybrid Fiber Coax (HFC) infrastructure, NXP CATV C-family
offers you a total solution for cable TV networks. It is both flexible enough for connecting rural
communities as part of China’s ‘Connecting every village’ program and powerful enough for
upgrading major cities from analog to high-end digital services. All C-type devices are compliant
with the Chinese State Administration for Radio, Film and Television (SARFT) standard, and cover
most HFC applications in the 550 - 870 MHz range.
Products
`BGY588C, BGE788C, CGY888C and BGY835C push-pull
amplifiers
`BGD712C, CGD944C and CGD942C power doublers
`BGO807C and BGO807CE optical receiver
Features
`Excellent linearity, stability and reliability
`High power gain
`Extremely low noise
`Silicon Nitride passivity
`GaAs HFET dies for high end devices
Benefits
`Compliant with Chinese SARFT HFC networks standard
`Transparent cap allows confirmation of product authenticity
`Rugged construction
Further extending our high quality CATV portfolio, this
new family lets you address an even wider range of HFC
applications. Dedicated solutions for the implementation
of CATV systems in China, our C-type devices deliver the
performance you need for modern TV infrastructures.
The BGY588C, BGE788C and BGD712C devices cover the
frequency range from 550 MHz to 750 MHz. Extending the
C-family portfolio into the high-end segment, the CGD944C,
CGD942C, CGY888C and BGO807C operate between 40 MHz
and 870 MHz and have been specifically tested under Chinese
raster conditions. Manufactured using our GaAs HFET die
process, the CGD942C, and CGD944C are high-gain, high-
performance 870 MHz power doublers. They are capable of
satisfying the demanding requirements of top-end applications
including high-power optical nodes.
Our GaAs HFET MMIC dies are providing ‘by design’ the
best ESD protection levels with no needs for external TVS
components normally used with GaAs pHEMT devices.
All CATV C-type devices feature a see-through cap that makes
it easy to distinguish them from counterfeit products.
49NXP Semiconductors RF Manual 14th edition
BGY588C, BGE788C, CGY888C and BGY835C
The last stage of an HFC network structure is called a
terminating amplifier or ‘user amplifier’ as it is close to the
subscribers. Each terminating amplifier requires a single
module such as BGY588C for 550 MHz, BGE788C for 750 MHz
and CGY888C for 860 MHz systems. These modules are fitting
perfectly in the Chinese ‘Connecting to Every Village’ projects.
BGD712C
The BGD712C is a 750 MHz, 18 dB power doubler module.
It has been designed for 750 MHz optical nodes including
ordinary or optical receivers and distribution amplifiers. It can
also be used in line extender amplifiers together with a 750 MHz
push-pull module, such as BGY785A or BGY787. As such it can be
used widely in Chinese ‘Connecting to Every Village’ projects.
bra821
IN
port OUT
port
BGD712CBGY785A
BGY787
EQPAD
bra820
IN
port OUT
port
BGY588C
BGE788C
BGY835C
CGY888C
EQPAD
CGD944C and CGD942C
Our full GaAs power doublers modules, CGD942C and
CGD944C offer high output power and better CTB and
CSO than other modules. Designed for high-end HFC
networks containing optical nodes with multiple out-ports,
these modules enable each port to directly cover at least
125 subscribers. These two devices are ideal when used in
upgrading HFC networks to 860 MHz.
BGO807CE
BGO807CE is an integrated optical receiver module that
provides high output levels and includes an integrated
temperature compensated circuitry. In your optical node
design, BGO807CE enables a high performance/ price ratio
and ruggedness. When upgrading an HFC network from
analog to digital our BGO807CE is the perfect fit.
bra823
BGY885A
BGO807CE
BGD812
H
LOUT
port 1
BGD812
H
LOUT
port 2
EQPAD
PAD
PAD
bra822
(N + 1) RF switch
BGY885A
BGD812
BGY887
BGO807CE
BGO807CE
CGD942C/CGD944C
H
LOUT
port 1
CGD942C/CGD944C
H
LOUT
port 2
CGD942C/CGD944C
H
LOUT
port 3
CGD942C/CGD944C
H
LOUT
port 4
EQ
PAD
PAD
PAD
PAD
PAD
50 NXP Semiconductors RF Manual 14th edition
C-family application information
Application BGY588C BGE788C CGY888C BGD712C BGO807C CGD944C CGD942C
Optical node ••••
Optical receiver ••••
Distribution amplifier ••••
Line extender amplifier ••••
Terminating amplifier •••
Push-pull amplifiers
Parameters BGY588C BGE788C CGY888C BGY835C
Power gain (dB) typ. 34.5 34.2 35.5 34
Slope (dB) range 0.2 - 1.7 0.3 - 2.3 1.5 typ. 1.5 typ.
Composite triple beat (dBc) max. -57 -49 -66 -60
Composite 2nd order distortion (dBc) max. -62 -52 -64 -55
Noise (@ fMAX) (dB) max. 8 8 3 typ. 7
Total current comsumption (mA) typ. 325 305 280 340
Frequency range (MHz) range 40 - 550 40 - 750 40 - 870 40 - 870
Power doublers
Parameters BGD712C CGD944C CGD942C
Power gain (dB) typ. 18.5 25 23
Slope (dB) range 0.5 - 1.5 1 - 2 1 - 2
Composite triple beat (dBc) max. -62 -66 -66
Composite 2nd order distortion (dBc) max. -63 -67 -67
Noise (@ fMAX) (dB) max. 7 5 5
Total current comsumption (mA) typ. 395 450 450
Frequency range (MHz) range 40 - 750 40 - 870 40 - 870
Optical receiver
Parameters BGO807C BGO807CE
Responsivity (V/W) min. 800 800
Slope (dB) range 0 - 2 0 - 2
Third order intermodulation distortion (dB) max. -71 -71
Second order intermodulation distortion (dB) max. -54 -53
Noise (@ fMAX) pA/Sqrt (Hz) max. 8.5 8.5
Total current consumption (mA) typ. 190 190
Frequency range (MHz) range 40 - 870 40 - 870
Connector - / SCO / FCO
51NXP Semiconductors RF Manual 14th edition
2.7.1 NXP GaAs HFC CATV solutions CGY888C, CGD942C and CGD944C
Complete GaAs amplifier solutions for Chinese HFC networks
These high-performance GaAs solutions, specially designed for the Chinese SARFT HFC standard,
provide complete functionality in a format that reduces chip-count and lowers overall cost.
Products
`870-MHz push-pull amplifier: CGY888C
`870-MHz power doublers: CGD942C (23-dB gain),
CGD944C (25-dB gain)
Features
`GaAs HFET process for best performance and
lowest chip-count
`Excellent linearity, stability, and reliability
`High power gain
`Extremely low noise
`Excellent return-loss properties
Benefits
`Fully compliant with Chinese SARFT HFC networks standard
`Transparent cap confirms product authenticity
`Rugged construction
`Unconditionally stable
`Thermally optimized design
Applications
`Hybrid Fiber Coax (HFC) applications
`Line extenders
`Trunk amplifiers
`Fiber deep-optical-node (N+0/1/2)
To support Chinese HFC CATV infrastructure applications
as a single-source supplier, NXP offers the C-family,
a complete line of dedicated RF amplifier modules that
deliver the very high level of performance required for
next-generation HFC TV networks.
The family includes the 870-MHz push-pull amplifier
CGY888C, a GaAs upgrade of NXP’s industry-leading
BGY888 and BGY835C products, and two 870-MHz power
doublers: the CGD942C, which has a typical gain of 23 dB,
and the CGD944C, with a typical gain of 25 dB.
The modules are flexible enough to connect rural
communities as part of China’s ‘Connect Every Village’
project, and powerful enough to upgrade major cities
from analog to high-end digital services.
The modules have been tested under Chinese raster conditions
and fully comply with the Chinese SRAFT standard. They also
cover most HFC applications in the range of 550 to 870 MHz
and are compatible with previous generations of NXP HFC
solutions, so they can be used to upgrade existing networks to
a higher level of performance.
Produced in NXP’s advanced GaAs HFET die process, the
modules deliver excellent linearity with extremely low noise,
and work seamlessly together. The GaAs process improves
performance and, by reducing chip count, saves overall cost.
It offers stronger signal strength than Si, so there are fewer
amplifiers required, and it provides superior ESD protection
compared to GaAs pHEMT processes, so there’s no need for
external TVS components. The CGY888C is well suited for
use in the last stage of an HFC network, which is known as
a terminating amplifier or a user amplifier since it is close to
subscribers.
The CGD942C and the CGD944C offer higher output power
and better CTB and CSO than other power doublers, so they
are ideal for use in HFC networks that have optical nodes with
multiple out-ports. The modules enable each port to cover at
least 125 subscribers directly.
All the C-family modules are delivered with transparent
caps that make it easy to distinguish them from
counterfeit products.
Unmatched new ESD protection levels:
All new standard NXP CATV SOT115 hybrids, power doublers
or push pulls, released in 2009 and onwards will have a build-in
extra protection on top of the existing one for very high level
ESD surges. Those surge levels will leave our devices without
any damage or destruction. Human body or biased ESD levels
will increase respectively to 2000 V and 1500 V which is making
now NXP CATV devices the most ESD robust product on the
market today.
52 NXP Semiconductors RF Manual 14th edition
New CATV GaAs platform lay-out
2.8 Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks
NXP high-gain power doublers CGD104xHi and push-pulls CGY104x
Designed for 1-GHz “sustainable networks,” these high-performance GaAs devices enable
extended bandwidth and higher data rates. They deliver increased network capacity and make way
for high-end services like HDTV, VoIP, and digital simulcasting.
Key features
`Excellent linearity, stability, and reliability
`High power gain for power doublers
`Extremely low noise
`Dark Green products
`GaAs HFET dies for high-end applications
`Rugged construction
`Superior levels of ESD protection
`Integrated ringwave protection
`Design optimized for digital channel loading
`Temperature compensated gain response
`Optimized heat management
`Excellent temperature resistance
Key benefits
`Simple upgrade to 1-GHz capable networks
`Low total cost of ownership
`High power-stress capability
`Highly automated assembly
Key applications
`Hybrid Fiber Coax (HFC) applications
`Line extenders
`Trunk amplifiers
`Fiber deep-optical-node (N+0/1/2)
`Bridgers
The NXP power doublers CGD104xH and CGD104xHi are ideal
for use in line extenders and trunk amplifiers. They support
fiber deep-optical-node applications (N+0/1/2), delivering
the highest output power on the market today. The GaAs HFET
die process delivers high gain, excellent CTB and CSO ratings,
along with lower current.
The new NXP CGY1047x push-pull family is the first line-up on
the market combining very low noise, best-in-class distortion
parameters, and low “carbon footprint” capabilities. It delivers
the best performance for the lowest power consumption,
so it reduces OPEX and CO2 emissions
All of NXP’s 1-GHz solutions are designed for durability and
offer superior ruggedness, an extended temperature range,
high power overstress capabilities, and extremely high ESD
levels. As a result, they also reduce the cost of ownership.
The GaAs die is inserted in a HVQFN package that is then
mounted on thermal vias that manage heat transfer to the
heat sink. Temperature-control circuitry keeps the module’s
high performance stable over a wide range of temperature.
Assembly is fully automated and requires almost no human
intervention, so repeatability remains very high.
53NXP Semiconductors RF Manual 14th edition
CATV 1- GHz power doublers
Parameters CGD1040Hi CGD1042H CGD1042Hi CGD1044H CGD1044Hi CGD1046Hi*
Power gain (dB) typ. 21 23 23 25 25 27
Slope cable equivalent (dB) typ. 1.5 1.5 1.5 1 1.5 0.5 - 2.0
Composite triple beat (dB) typ. -69 -69 -69 -69 -69 -73
Composite 2nd order distortion (dB) typ. -68 -68 -68 -68 -68 -68
Noise (@fMAX) (dB) max. 666665
Total current consumption (mA) typ. 440 450 440 450 440 460
Frequency range (MHz) range 40 - 1003 40 - 1003 40 - 1003 40 - 1003 40 - 1003 40 - 1003
CATV 1-GHz push-pulls
Parameters CGY1041 CGY1043 CGY1049* CGY1032*
Power gain (dB) typ. 22 24 30 33
Slope cable equivalent (dB) typ. 1.5 1.5 2 1.5
Composite triple beat (dB) typ. -62 -64 -62 -62
Composite 2nd order distortion (dB) typ. -62 -64 -64 -64
Noise (@fMAX) (dB) max. 5.5 5.5 4.5 4.5
Total current consumption (mA) typ. 250 250 250 250
Frequency range (MHz) range 40 - 1003 40 - 1003 40 - 1003 40 - 1003
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Quick reference data CATV 1 GHz power doublers and push pulls
An optical node with multiple out-ports using the CGD1040Hi / CGD1042Hi / CGD1044Hi / CGD1046Hi
bra822
(N + 1) RF switch
CGD104xHi
H
LOUT
port 1
CGD104xHi
H
LOUT
port 2
CGD104xHi
H
LOUT
port 3
CGD104xHi
H
LOUT
port 4
EQ
PAD
PAD
PAD
PAD
PAD
Upcoming products
Additional push-pulls, currently under development, will
extend the capabilities of the power doublers even further,
supporting almost all modern HFC applications. The push-pull
CGY1041 will deliver a gain of 21 dB, the CGY1043 a gain of
23 dB, the CGY1049 a gain of 29 dB and the CGY1032 a gain of
32 dB. NXP is also developing a new, highly integrated power
doubler. The CGD1046Hi will deliver, in one IC, a 26-dB power
gain with 60-dBmV output power and excellent ESD protection,
for the ultimate in high-quality, distortionless devices.
54 NXP Semiconductors RF Manual 14th edition
2.9 Doherty amplifier technology for state-of-art wireless infrastructure
Best in class PA designs enable considerable energy savings
NXP’s latest power amplifier designs enable wireless infrastructure to run with significantly higher
energy efficiency – towards “Green Base Stations”. In order to achieve the highest efficiencies
currently possible, NXP combines its latest generations LDMOS technology (Gen6 & 7) with the
Doherty concept. This way, the optimized intrinsic performance of our LDMOS technology combines
perfectly with the extrinsic Doherty technology into very efficient, high gain, readily linearizable, and
lower operation cost power amplifiers.
Developed by W.H. Doherty in 1936, the Doherty amplifier remained largely dormant because
the dominant mobile communication system modulation techniques (FM, GMSK and EDGE) did
not require high peak-to-average ratio (PAR) signals. However, the high power added efficiency
architecture of the Doherty amplifier has made it the preferred option for today's service providers
for base stations transmitting 3G, 4G or multi-carrier standards.
NXP’s Doherty amplifiers ensure high-efficiency while maintaining a very similar peak power
capability of two transistors combined. The input and output sections are internally matched,
benefiting the amplifier designs with high gain and good gain flatness and phase linearity over a
wide frequency band.
Key features & benefits
`Contains splitter, main- and peak amplifier, delay lines
and combiner in one package
- 40% efficiency @ 10 W average power
- no additional tuning in manufacturing
`Design is as easy as with a single class AB transistor
`Ideally suited for space-constrained applications
(e.g. remote radio heads, antenna arrays)
`Currently available for TD-S-CDMA (BLD6G21L(S)-50) and
W-CDMA (BLD22L(S)-50); see chapter 3.7.1.4 for details
Integrated Doherty
NXP can even offer the world’s first fully integrated Doherty
designs: From the outside these devices look like an ordinary
transistor. In fact, they are completely integrated Doherty
amplifiers that deliver the highest efficiency levels for base
station applications. With the ease of design-in of an ordinary
class AB transistor, they also provide significant
space and cost savings.
55NXP Semiconductors RF Manual 14th edition
Key features & benefits
`Most efficient Doherty amplifier designs available to date
`Production proven, very consistent designs
`NXP’s LDMOS provides unsurpassed ruggedness
`Currently available for the following frequency bands:
- 728 - 821 MHz
- 869 - 960 MHz
- 1805 - 1880 MHz (DCS)
- 1930 - 1990 MHz (PCS)
- 1880 - 2025 MHz (TD-SCDMA)
- 2110 - 2170 MHz (UMTS / LTE)
- 2300 - 2400 MHz (WiBRO / LTE)
- 2500 - 2700 MHz (WiMAX / LTE)
- 3300 - 3800 MHz (WiMAX)
All our product demonstrators are supported by
comprehensive support documentation and hardware.
Please see chapter 3.7.1.7 for a complete list of available
designs.
Discrete Doherty amplifiers
Next to the integrated versions, NXP also offers product
demonstrators for very efficient, high power, discrete 2- and
3- way Doherty amplifiers. The 2 way designs based on the
BLF7G22LS-130 device deliver 47.0 dBm (50 W) with 43%
efficiency and 15.7 dB gain for W-CDMA applications.
Our flagship 3-way Doherty demonstrator even achieves 48%
efficiency at 48 dBm (63 W) average output power and 15.0 dB
gain with a 2 carrier W-CDMA signal. The current design covers
the W-CDMA standard for band 1 operation and is tailored
towards high yield, minimum tuning, volume manufacturing.
Featured Doherty designs
Freq band
(MHz)
PPEAK
(dBm)
POUT-AVG
(dBm)
VDS
(V)
Gain
(dB)
Drain Eff.
(%)
Type Main transistor Peak transistor
728-756 59.1 50.5 32 19 40 SYM BLF6G10-260PM BLF6G10-260PM
790-821 58 50 32 19 47 SYM BLF6G10LS-200RN BLF6G10LS-200RN
869-894 58 50 32 19 46 SYM BLF6G10-200RN BLF6G10-200RN
925-960 58.9 50 32 22 44 SYM / MMPP BLF6G10-260PRN BLF6G10-260PRN
1805-1880 58.2 50 28 16 42 SYM / MPPM BLF7G20LS-250P BLF7G20LS-250P
1930-1990 58 50 32 15.5 37 SYM BLF6G20-230PRN BLF6G20-230PRN
2110-2170 58 50 32 15 40 SYM BLF6G22-180PN BLF6G22-180PN
2300-2400 49.5 42 28 14.5 43 SYM 1/2 BLF7G27-75P 1/2 BLF7G27-75P
2500-2700 52.5 44.5 28 14 38 SYM 1/2 BLF6G27-150P 1/2 BLF7G27-150P
3400-3600 51 43 28 11.5 32 SYM BLF6G38-50 BLF6G38-50
56 NXP Semiconductors RF Manual 14th edition
2.10 Boost efficiency and lower system cost in wireless infrastructure with GaN
NXP GaN technology for RF power
This new gallium-nitride (GaN) technology, the result of a collaborative development effort,
enables high-power amplifiers that deliver very high efficiency in next-generation wireless
communication systems.
Features
`Power density that is up to five times higher than Si LDMOS
`50 V operation
`High gain
`High efficiency
`High reliability
`Low parasitics
Benefits
`High frequency combined with high power
`Broadband operation that lets a single power amplifier
function at multiple frequencies
`Enabling technology for next-generation, high-power, Switch
Mode Power Amplifier (SMPA) architectures
`Lowers system costs and operational expenditures
`Ideal for tower-top base stations
Applications
`Cellular base stations
`WiMAX
`Broadcast
`Radar
Collaborating with United Monolithic Semiconductors and
the Fraunhofer Institute for Applied Solid State Physics, NXP
Semiconductors is developing a gallium-nitride (GaN) process
technology that boosts performance of next-generation RF
power amplifiers.
The new GaN process, with its high frequency combined
with high power, puts NXP in the ideal position of being able
to support future applications while continuing to evolve its
well-established LDMOS technology.
The GaN technology delivers numerous benefits to
manufacturers of infrastructure equipment. Using the GaN
technology in a transmitter represents a significant cost savings
in system manufacturing, along with major improvements in
system performance and flexibility.
Most of today’s base station power amplifiers are limited to
specific applications. The new GaN-based technology lets
operators use a “universal transmitter” to switch between
systems and frequencies, so they can instantly meet demands
in the base station’s coverage area. GaN transistors enable
much more efficient power amplifiers and as a result drive
down the operational costs of telecom operators.
GaN transistors can operate at much higher junction
temperatures than Si- and GaAs-based devices, so GaN is
an ideal candidate for environments with reduced cooling
capabilities, such as tower-top base stations. Also, with its high
power densities, GaN has the potential to expand into other
areas, including high-power broadcast applications, where
solid-state power amplifiers built with vacuum tubes are still
the norm.
NXP’s first GaN broadband power amplifiers are expected
to be available in 2010, with Switch Mode Power Amplifiers
(SMPAs) following quickly thereafter.
Performance (targets)
Saturated output power at 50 V 100 W
Frequency 2.2 GHz
Maximum PAE 68%
Linear power gain 19 dB
2C-WCDMA linear efciency with DPD 40% at –52 dBc IM3 at 8 dB OPBO
Assembly of GaN power bar in standard ceramic package
57NXP Semiconductors RF Manual 14th edition
2.11 Looking for the leader in SiGe:C? You've just found us!
NXP QUBiC4 process technology
NXP's innovative high performance SiGe:C QUBiC4 process allows customers to incorporate
more functionality into devices with less space, competitive cost, superb reliability and significant
manufacturing advantages. Our state-of-the-art QUBiC4 technology and extensive IP availability
speeds the migration from GaAs components to silicon by enabling cutting-edge products with
best in class low-noise performance, linearity, power consumption, immunity to out-of-band signals,
spurious performance and output power. NXP’s QUBiC is a mature process in mass production
since 2002 with continuous performance upgrades since then. The QUBiC4 process is automotive
qualified and dual sourced in two high volume NXP-owned 8 inch waferfabs providing flexible, low
cost manufacturing with high yields and very low ppm in the field.
QUBiC4 in 3 variants, each having it’s benefits for specific
application areas:
QUBiC4+
The QUBiC4+ BiCMOS process features 0.25 μm CMOS with
5 metal layers for integration of dense digital logic based
smart functionality, a rich set of active and passive devices for
high-frequency mixed-signal designs including thick top metal
layers for high quality inductors. The device set; includinges a
37 GHz FT NPNs with 3.8 V breakdown voltage (BVce0) and
low noise figure (NF < 1.1 @ 2 GHz), 7 GHz fT VPNPs, a 28 GHz
high voltage NPN with 5.9 V breakdown voltage, differential
and single ended varicaps with Q-factor>30, scalable
inductors with Q-factor>20, 800 MHz FT lateral PNP’s,
0.25 μm CMOS, 137, 220 & 12 to 2000 ohm/sq. poly and
active resistors, a 270 ohm/sq. SiCr thin film resistor, a
5.7 fF/μm2 oxide capacitor and an 5 fF/μm2 MIM capacitor,
1 to 6 fF/μm2 oxide capacitors and various other devices
including L-PNPs, isolated NMOS, 3.3 V CMOS and RF-CMOS
transistorscapacitor. The QUBiC4+ process is: silicon based
and , ideal for applications up to 5 GHz (Ft = 37 GHz ,
NF < 1.1 dB @ 1.2 GHz) and e.g. for medium power amplifiers
up to 33 dBm.
QUBiC4X
The QUBiC4X BiCMOS process is a SiGe:C based extension
of the QUBiC process for high-frequency mixed signal designs
and offers on top of features the a rich set of devices for QUBiC
high-frequency mixed-signal designs; including also a 140 GHz
FT NPN with 2.5 V breakdown voltage and very low noise figure
(NF < 1.0 @ 10GHz). s, 0.25 μm CMOS, 220, a variety of resistors, a
5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor.
The QUBiC4X: first SiGe:C process is, ideal for applications
typically up to 30 GHz (Ft = 137 GHz , NF < 0.8dB @ 10 GHz)
and ultra low noise applications, e.g. LNAs and mixers.
QUBiC4Xi
The QUBiC4Xi BiCMOS process further enhances the QUBiC4X
process and offers additionally a features a set of devices for
high-frequency mixed-signal designs; including 180 GHz FT
NPNs with 1.4 V breakdown voltage and ultra-low noise figure
(NF < 0.7 @ 10 Ghz), 0.25 μm CMOS, several resistors,
a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MI capacitor.
QUBiC4Xi is the: newest SiGe:C process improved on Ft
(> 200 GHz) and even lower noise figure (NF < 0.5 7 dB @
10 GHz) and is, ideal for applications beyond 30 GHz, e.g.
LO generators.
58 NXP Semiconductors RF Manual 14th edition
Features QUBiC4/4+/4DG QUBiC4X QUBiC4X
Release for production 2002/2004/2006 2006 2008
CMOS/Bipolar CMOS 0.25um, Bipolar 0.4um,
Double poly, Deep trench, Si
CMOS 0.25um, Bipolar LV 0.4um,
Double poly, Deep trench, SiGe:C
CMOS 0.25um, Bipolar LV 0.3um,
Double poly, Deep trench, SiGe:C
LV NPN Ft/Fmax (GHz) 37/90 (Si) 137/180 (SiGe:C) 180/200 (SiGe:C)
HV NPN Ft/Fmax (GHz) 28/70 (Si) 60/120 (SiGe:C) tbd (SiGe:C)
NPN BVce0: HV/LV ** 5.9 / 3.8 V 3.2 / 2.0 V 2.5 / 1.4 V
V-PNP Ft / BVcb0 (GHz / V) 7 / >9 planned planned
CMOS Voltage /
Dual Gate
2.5 / 3.3 V 2.5 V 2.5 V
Noise figure NPN (dB) 2GHz: 1.1 10GHz: 1.0 10GHz: 0.7
RFCMOS Ft (GHz) NMOS 58, PMOS 19 NMOS 58, PMOS 19 NMOS 58, PMOS 19
Isolation (60 dB @ 10 GHz) STI and DTI STI and DTI STI and DTI
Interconnection
(AlCu with CMP W Plugs)
5 LM, 3 µm top Metal 5 LM, 3 µm top Metal
2 µm M4
5 LM, 3 µm top Metal
Capacitors NW, DN, Poly-Poly
5fF/um2 MIM
NW, DN, Poly-Poly
5fF/um2 MIM
NW, DN, Poly-Poly
5fF/um2 MIM
Resistors (Ohm/sq) Poly (64/220/330/2K), Active (12, 57),
High Precision SiCr (270)
Poly (64/220/330/2K), Active (12, 57),
High Precision SiCr tbd
Poly (64/220/330/2K), Active (12, 57),
High Precision SiCr tbd
Varicaps (single-ended &
differential)
2x single ended, Q > 40
3x differential, Q 30-50
2x single ended, Q > 40
3x differential, Q 30-50
2x single ended, Q > 40
3x differential, Q 30-50
Inductors (1.5nH @ 2 Ghz)
- scalable
Q > 21, Thick Metal, Deep trench isolation,
High R substrate
Q > 21, Thick Metal, Deep trench isolation,
High R substrate
Q > 21, Thick Metal, Deep trench isolation,
High R substrate
Other devices LPNP, Isolated NMOS LPNP, Isolated-NMOS tbd LPNP, Isolated-NMOS tbd
Mask count 31 / 32 (MIM) / 33 (DG) 35 (MIM) 35 (MIM)
QUBiC4+
BiCMOS
ft/f max
= 37/90 GHz
+DG
+TFR
+VPNP
+HVNPN
-4ML
SiGe
ft/ fmax
= 137/180 GHz
QUBiC4X
SiGe:C
ft/ fmax
= 180/200 GHz
QUBiC4Xi
QUBiC4+
`Baseline, 0.25um CMOS, single poly, 5 metal
`Digital gate density 26k gates/mm2
`fT/fMAX= 37/90 GHz
`+TFR – Thin Film Resistor
`+DG – Dual Gate Oxide MOS
`+HVNPN – High Voltage NPN
`+VPNP – Vertical PNP
`-4ML – high density 5fF/µm2 MIM capacitor
`Wide range of active and high quality passive devices
`Optimized for up to 5GHz applications
QUBiC4X
`SiGe:C process
`fT/fMAX= 137/180 GHz
`optimized for up to 15 GHz applications
QUBiC4Xi
`Improves fT/fMAX up to 180/200 GHz
`Optimized for ultra-low noise for microwave above 10 GHz
59NXP Semiconductors RF Manual 14th edition
2.12 Microwave / Radar
NXP, your partner in High Performance microwave applications
NXP has a 50+ years history in semiconductor technology and component design. For more
than 3 decades we are leading in providing high performance RF technologies for microwave
applications. The company has built a strong position in the field of RF small signal and power
transistors for microwave amplifiers with a solid and growing, and best-in-class Si devices and
processing technologies.
We were the first semiconductor company to supply S-band
transistors (2700 - 3500 MHz) based on laterally diffused
metal-oxide-silicon (LDMOS). To further strengthen our
position towards the future, we currently develop new high
power and high-bandwidth technologies based on gallium
nitride (GaN) material.
Another enabling technology is NXP’s BICMOS process QUBiC
that is available in several variants with fT up to 200 GHz, each
specialized to address specific small signal RF applications.
The product portfolio encompasses:
- Low noise amplifiers (LNA)
- Variable gain amplifiers (VGA)
- Mixers,
- Local oscillators (LO)
- LO Generators
Coming from a component background, NXP now also focuses
on architectural breakthroughs by highly integrated products
for microwave and millimeter wave. One example is a family of
LO Generators from 7G Hz to 15 GHz with integrated
Phase-Locked Loop and Voltage Controlled Oscillator.
Another example is an integrated RF power module in S-band
(3.1-3.5 GHz) at 200 W. Both products are highlighted in the
following:
RF small signal product highlight:
LO generators TFF11xxxHN
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process
technology, these highly integrated, alignment-free LO
generators are low-power, low-spurious solutions that simplify
design-in and lower the total cost of ownership.
Features
`Lowest noise LO generators for 7 to 15 GHz range
`Maximum power consumption for all types, typical 330 mW
`Phase-noise compliant with IESS-308 (Intelsat)
`Proven QUBiC4X SiGe:C technology (120 GHz fT process)
`External loop filter
`Differential input and output
`Lock-detect output
`Internally stabilized voltage reference for loop filter
RF Power product highlight !
The BLS6G2933P-200 is the first LDMOS based, industry
standard pallet produced by NXP. This pallet offers more than
40% efficiency and includes the complete bias network for
S-band applications.
60 NXP Semiconductors RF Manual 14th edition
Features:
`Reduces component count and considerably simplifies radar
system design
`P1 dB output power 200 W
`Efficiency > 40%
`Industry standard footprint
`50 Ω in/out matched for entire bandwidth
`Lightweight heat sink included
` The advantages of LDMOS in comparison with Bipolar
- Higher gain and better efficiency
- Better ruggedness – overdrive without risk to 5 dB
- Improved pulse droop and insertion phase
- Very consistent performance – no tuning required
- Improved thermal characteristics, no thermal runaway
- Non-toxic packaging and ROHS compliance
For a complete list of products see the respective small
signal and power microwave pages
Microwave applications and bands of operation
System Frequency
VHF and UHF <1 GHz
L-Band 1200 - 1400 MHz
S-Band 2700 - 3500 MHz
X-band 8000 - 12000 MHz
Commercial Avionics
DME (Distance Measuring Equipment) 978 - 1215 MHz
Transponders
Mode A / Mode S / Mode C / TCAS 1030 - 1090 MHz
Military Avionics
IFF Transponders (Identification, Friend or Foe) 1030 - 1090 MHz
TACAN (Tactical Air Navigation) 960 - 1215 MHz
JTIDS / MIDS
(Joint Tactical Information Distribution System) 960 - 1215 MHz
Marine radar 9300 - 9500 MHz
61NXP Semiconductors RF Manual 14th edition
brb339
typ. 0.5 kW
DVB-T
typ. 5 kW DVB-T
output power
TV exciter
DVB-T
Driver stages
amplifiers
harmonic
filter power
monitor
8× final
2.13 Digital broadcasting at its best
The BLF881 / BLF888 transistor line-up enables today’s most powerful and
efficient digital broadcast transmitter applications
BLF881
The transistor is based on NXP’s new 50V LDMOS technology,
and features 140 W RF output power for broadcast transmitter
and industrial applications. An unmatched device, the BLF881
can be used in the HF to 1 GHz range. The excellent
ruggedness and broadband performance of this device makes
it ideal for digital transmitter applications – either stand alone
or as a driver in combination with the high-power transistor
BLF888.
The BLF881 is also available in an earless version: BLF881S,
enabling an even more compact PCB design.
BLF888
Also based on the new 50 V technology created by NXP, the
BLF888 is the most powerful LDMOS broadcast transistor
to date. The 500 W LDMOS device is specifically designed
for digital broadcast transmitter applications. The transistor
delivers 110 W average power for a DVB-T signal over the full
UHF band from 470 MHz to 860 MHz. The excellent efficiency
and ruggedness of this device makes it ideal as the final stage
for advanced digital transmitter applications
Key benefits
`50 V operations to achieve highest power levels in the
market
`Best-in-class ruggedness designed into all devices
`Best broadband efficiency
`Best-in-class design support
`Very low thermal resistance design for unrivalled reliability
Key applications
`Analogue and digital TV transmitters
frange PL(AV) nDGp@VDS Mode of
operation
Device (MHz) W % dB V
BLF881(S) 0 - 1000 120 48 21 50 2-TONE
0 - 1000 30 31 21 50 DVB-T
BLF888 470 - 860 250 46 19 50 2-TONE
470 - 860 110 31 19 50 DVB-T
62 NXP Semiconductors RF Manual 14th edition
3. Product portfolio
NXP RF product catalog:
http://www.nxp.com/rf
3.1 New products
DEV = In development
CQS = Customer qualification samples
RFS = Release for supply
Type Application / Description Status
May 2010
Planned
release Chapter
NEW: RF diodes
BAP64Q Quad pin diodes for e.g. discrete attenuators RFS Released 3.2.2
BAP70Q Quad pin diodes for e.g. discrete attenuators RFS Released 3.2.2
NEW: SiGe:C transistors
BFU610F 6st generation wideband transistor DEV Q4 2010 3.3.1
BFU630F 6st generation wideband transistor DEV Q4 2010 3.3.1
BFU660F 6st generation wideband transistor DEV Q4 2010 3.3.1
BFU690F 6st generation wideband transistor DEV Q4 2010 3.3.1
BFU710F 7th generation wideband transistor DEV Q4 2010 3.3.1
BFU730F 7th generation wideband transistor DEV Q4 2010 3.3.1
BFU760F 7th generation wideband transistor DEV Q4 2010 3.3.1
BFU790F 7th generation wideband transistor DEV Q4 2010 3.3.1
NEW: Automotive Qualified Wideband MMIC and transistors
BGA2002 Low noise wideband amplifier MMIC RFS Released 3.4.1
BFR94A RF wideband transistor RFS Released 3.3.1
BFR94AW RF wideband transistor RFS Released 3.3.1
NEW: SiGe:C MMICs LNA's for GPS and STB
BGU7005 SiGe:C MMIC, incl matching output for GPS LNA, 16.5 dB RFS Released 3.4.1
BGU7006 SiGe:C MMIC, GPS LNA in wafer level chip-scale package (WLCSP) DEV Q4 2010 3.4.1
BGU7007 SiGe:C MMIC, incl matching output for GPS LNA, 18 dB DEV Q1 2011 3.4.1
BGU7031 SiGe:C LNA for STB tuning CQS Q3 2010 3.4.1
BGU7032 SiGe:C LNA for STB tuning CQS Q3 2010 3.4.1
BGU7033 SiGe:C LNA for STB tuning CQS Q3 2010 3.4.1
NEW: Mosfets
BF1215 Double mosfet for STB tuning, world class cross modulation performance RFS Released 3.5.2
BF1216 Double mosfet for STB tuning, world class cross modulation performance RFS Released 3.5.2
BF1217 Single mosfet for STB tuning, world class cross modulation performance RFS Released 3.5.2
BF1218 Double mosfet for TV tuning RFS Released 3.5.2
BF1118 series Mosfet RF switches for antenna loop through RFS Released 3.5.2
NEW: Medium power amplifier MMICs
BGA7124 Medium power amplifier, 24 dBm P1dB, leadless SOT908 RFS Released 3.4.1
BGA7024 Medium power amplifier, 24 dBm P1dB, leaded SOT89 RFS Released 3.4.1
BGA7127 Medium power amplifier, 27 dBm P1dB, leadless SOT908 RFS Released 3.4.1
BGA7027 Medium power amplifier, 27 dBm P1dB, leaded SOT89 RFS Released 3.4.1
BGA7130 Medium power amplifier, 30 dBm P1dB, leadless SOT908 DEV Q1 2011 3.4.1
BGA7133 Medium power amplifier, 33 dBm P1dB, leadless SOT908 DEV Q1 2011 3.4.1
NEW: Variable Gain Amplifiers (VGA)
BGA7350 Dual IF VGA, control range 24 dB DEV Q4 2010 3.4.1
BGA7351 Dual IF VGA , control range 28 dB DEV Q1 2011 3.4.1
BGA7202 Tx RF VGA, 0.7 - 2.2 GHz DEV Q4 2010 3.4.1
BGA7203 Tx RF VGA , 2.1 - 2.8 GHz DEV Q1 2011 3.4.1
BGA7204 Tx RF VGA, 0.7 - 2.8 GHz DEV Q1 2011 3.4.1
NEW: SiGe:C LNA's for wireless infrastructures
BGU7051 Low Noise Amplifier 900 MHz DEV Q1 2011 3.4.1
BGU7052 Low Noise Amplifier 1.9 GHz DEV Q2 2011 3.4.1
BGU7053 Low Noise Amplifier 2.5 GHz DEV Q2 2011 3.4.1
BGU7054 Low Noise Amplifier 3.5 GHz DEV Q3 2011 3.4.1
63NXP Semiconductors RF Manual 14th edition
Type Application / Description Status
May 2010
Planned
release Chapter
NEW: RF IC's & MMICs for e.g. satellite, VCO/PLL
BGA2800 Satellite IF gain block RFS Released 3.4.1
BGA2801 Satellite IF gain block RFS Released 3.4.1
BGA2815 Satellite IF gain block RFS Released 3.4.1
BGA2816 Satellite IF gain block RFS Released 3.4.1
BGA2850 Satellite IF gain block RFS Released 3.4.1
BGA2865 Satellite IF gain block RFS Released 3.4.1
BGA2866 Satellite IF gain block RFS Released 3.4.1
TFF1003HN Low noise LO generator for VSAT applications RFS Released 3.4.2
TFF1007HN Low noise LO generator for VSAT applications CQS Q3 2010 3.4.2
TFF11070HN Low noise LO generator for general microwave applications CQS Q3 2010 3.4.2
TFF11073HN Low noise LO generator for general microwave applications CQS Q3 2010 3.4.2
TFF11077HN Low noise LO generator for general microwave applications CQS Q3 2010 3.4.2
TFF11080HN Low noise LO generator for general microwave applications CQS Q3 2010 3.4.2
TFF11084HN Low noise LO generator for general microwave applications CQS Q3 2010 3.4.2
TFF11088HN Low noise LO generator for general microwave applications CQS Q3 2010 3.4.2
TFF11092HN Low noise LO generator for general microwave applications CQS Q3 2010 3.4.2
TFF11096HN Low noise LO generator for general microwave applications CQS Q3 2010 3.4.2
TFF11101HN Low noise LO generator for general microwave applications CQS Q3 2010 3.4.2
TFF11105HN Low noise LO generator for general microwave applications CQS Q3 2010 3.4.2
TFF11110HN Low noise LO generator for general microwave applications CQS Q3 2010 3.4.2
TFF11115HN Low noise LO generator for general microwave applications CQS Q3 2010 3.4.2
TFF11121HN Low noise LO generator for general microwave applications CQS Q3 2010 3.4.2
TFF11126HN Low noise LO generator for general microwave applications CQS Q3 2010 3.4.2
TFF11139HN Low noise LO generator for general microwave applications CQS Q3 2010 3.4.2
TFF11145HN Low noise LO generator for general microwave applications CQS Q3 2010 3.4.2
TFF11152HN Low noise LO generator for general microwave applications CQS Q3 2010 3.4.2
NEW: RF CATV modules
CGY1041 1 GHz, 21 dB gain Push Pull, GaAs HFET SOT115 CQS Q2 2010 3.6.2
CGY1043 1 GHz, 23 dB gain Push Pull, GaAs HFET SOT115 CQS Q2 2010 3.6.2
CGY1049 1 GHz, 29 dB gain Push Pull, GaAs HFET SOT115 DEV Q3 2010 3.6.2
CGY1032 1 GHz, 32 dB gain Push Pull, GaAs HFET SOT115 DEV Q3 2010 3.6.2
CGD1046Hi 1 GHz, 26 dB gain Power Doubler, GaAs HFET SOT115 CQS Q2 2010 3.6.3
BGO807CE 870 MHz, forward path optical receiver, SOT115 RFS Released 3.6.4
NEW: RF High Speed Data Converters
ADC1613D series Dual 16-bit ADC up to 65/80/105/125Msps with serial interface CQS Released 3.8.1
ADC1610S series Single 16-bit ADC up to 65/80/105/125Msps CQS Released 3.8.1
ADC1415S series Single 14-bit ADC up to 65/80/105/125Msps with input buffer CQS Released 3.8.1
ADC1413D series Dual 14-bit ADC up to 65/80/105/125Msps with serial interface CQS Released 3.8.1
ADC1412D series Dual 14-bit ADC up to 65/80/105/125Msps CQS Q3 2010 3.8.1
ADC1410S series Single 14-bit ADC up to 65/80/105/125Msps CQS Released 3.8.1
ADC1215S series Single 12-bit ADC up to 65/80/105/125Msps with input buffer CQS Released 3.8.1
ADC1213D series Dual 12-bit ADC up to 65/80/105/125Msps with serial interface CQS Released 3.8.1
ADC1212D series Dual 12-bit ADC up to 65/80/105/125Msps CQS Q3 2010 3.8.1
ADC1210S series Single 12-bit ADC up to 65/80/105/125Msps CQS Released 3.8.1
ADC1115S125 Single 11-bit ADC up to 125Msps with input buffer CQS Released 3.8.1
ADC1113D125 Dual 11-bit ADC up to 125Msps with serial interface CQS Released 3.8.1
ADC1015S series Single 10-bit ADC up to 65/80/105/125Msps with input buffer CQS Released 3.8.1
ADC1010S series Single 10-bit ADC up to 125Msps CQS Released 3.8.1
DAC1408D series Dual 14-bit DAC up to 650/750 Msps CQS Q3 2010 3.8.2
DAC1405D series Dual 14-bit DAC up to 650/750 Msps RFS Released 3.8.2
DAC1208D series Dual 12-bit DAC up to 650/750 Msps CQS Q3 2010 3.8.2
DAC1205D series Dual 12-bit DAC up to 650/750 Msps RFS Released 3.8.2
DAC1008D series Dual 10-bit DAC up to 650/750 Msps CQS Q3 2010 3.8.2
DAC1005D series Dual 10-bit DAC up to 650/750 Msps RFS Released 3.8.2
NEW: RF Power cellular transistors
BLF7G24L(S)-100(G) Power Gen7 LDMOS transistor for base station applications DEV Q4 2010 3.7.1.4
BLF7G27L(S)-75P Power Gen7 LDMOS transistor for base station applications DEV Q2 2010 3.7.1.4
BLF7G27L(S)-50BN Power LDMOS transistor for base station applications DEV Q2 2010 3.7.1.4
BLF7G27L(S)-100 Power Gen7 LDMOS transistor for base station applications DEV Q2 2010 3.7.1.4
BLF7G27L(S)-140 Power Gen7 LDMOS transistor for base station applications DEV Q3 2010 3.7.1.4
BLF7G22L(S)-250P Power Gen7 LDMOS transistor for base station applications DEV Q2 2010 3.7.1.3
BLF7G20L(S)-300P Power Gen7 LDMOS transistor for base station applications DEV Q3 2010 3.7.1.2
BLF7G20L(S)-200 Power Gen7 LDMOS transistor for base station applications DEV Q3 2010 3.7.1.2
BLF7G20L(S)-250P Power Gen7 LDMOS transistor for base station applications DEV Q3 2010 3.7.1.2
BLF6G10L(S)-40BRN Power LDMOS transistor for base station applications DEV Q2 2010 3.7.1.1
BLF6G10L(S)-260PRN Power LDMOS transistor for base station applications DEV Q2 2010 3.7.1.1
BLF6G07L(S)-260PBM Power LDMOS transistor for base station applications DEV Q2 2010 3.7.1.1
NEW: RF Power Broadcast transistors
BLF573 High Voltage RF Power transistor for broadcast/ISM DEV Q2 2010 3.7.2.1
BLF888A(S) High Voltage RF Power transistor for broadcast/ISM DEV Q3 2010 3.7.2.1
NEW: RF Power Microwave transistors
BLS7G2729S-300P RF Power transistors for S band DEV Q4 2010 3.7.3.3
BLS6G2933P-200 High voltage RF Power pallet for S band DEV Q3 2010 3.7.3.3
BLS7G2731P-200 High voltage RF Power pallet for S band DEV Q4 2010 3.7.3.3
64 NXP Semiconductors RF Manual 14th edition
3.2 RF diodes
3.2.1 Varicap diodes
Why choose NXP semiconductors’ varicap diodes:
`Reference designs for TV and radio tuning
`Direct matching process
`Small tolerances
`Short leadtimes
`Complete portfolio covering broad frequency range and variety in package (including leadless)
`Reliable volume supply
VCO and FM radio tuning varicap diodes
Type Package
Number
of
diodes
Confi-
guration
@ f = 1 MHz rs
typ
rs
max @ f =
Cd
min
Cd
typ
Cd
max
@ VR
=
Cd
min
Cd
typ
Cd
max
@ VR
=Cd1/
Cd2
min
Cd1/
Cd2
max
@ V1
=
@ V2
=
(pF) (pF) (pF) (V) (pF) (pF) (pF) (V) (V) (V) (Ω) (Ω) (MHz)
BB145B SOD523 1 SG 6.4 - 7.2 1 2.55 - 2.95 4 2.2 - 1 4 - 0.6 470
BB156 SOD323 1 SG 14.4 16 17.6 1 4.2 4.8 5.4 7.5 2.7 3.9 1 7.5 0.4 0.7 470
BB198 SOD523 1 SG 25 - 28.5 1 4.8 - 6.8 4 - - - - - 0.8 100
BB199 SOD523 1 SG 36.5 - 42.5 0.5 11.8 - 13.8 2 2.8 - 0.5 2 0.25 - 100
BB201 SOT23 2 CC 89 95 102 1 25.5 27.6 29.7 7.5 3.1 3.8 1 7.5 0.25 0.5 100
BB202^^ SOD523 1 SG 28.2 - 33.5 0.2 7.2 - 11.2 2.3 2.5 - 0.2 2.3 0.35 0.6 100
BB202LX^^ SOD882T 1 SG 28.2 - 33.5 0.2 7.2 - 11.2 2.3 2.5 - 0.2 2.3 0.35 - 100
BB207^ SOT23 2 CC 76 81 86 1 25.5 27.6 29.7 7.5 2.6 3.3 1 7.5 0.2 0.4 100
BB208-02^ SOD523 1 SG 19.9 - 23.2 1 4.5 - 5.4 7.5 3.7 5.2 1 7.5 0.35 0.5 100
BB208-03^ SOD323 1 SG 19.9 - 23.2 1 4.5 - 5.4 7.5 3.7 5.2 1 7.5 0.35 0.5 100
^ = Including special design for FM car radio (CREST-IC:TEF6860). Type of connection:
^^ = Including special design for mobile phone tuner ICs. SG: Single
CC: Common Cathode
TV / VCR / DVD / HDD varicap diodes - UHF tuning
Type Package
@ f = 1 MHz rs
typ
rs
max @ f = @
Cd = ∆Cd/
Cd
@ V1
=
@ V2
=@
Ns
=
Cd
min
Cd
typ
Cd
max
@ VR
=Cd1/Cd2
min
Cd1/Cd2
typ
Cd1/Cd2
max
@ V1
=
@ V2
=
(pF) (pF) (pF) (V) (V) (V) (Ω) (Ω) (MHz) (pF) (V) (V)
Matched
BB149 SOD323 1.9 2.1 2.25 28 8.2 9 10 1 28 - 0.75 470 9 2 0.5 28 10
BB149A SOD323 1.951 2.1 2.225 28 8.45 9 10.9 1 28 0.6 0.75 470 9 2 1 28 10
BB179 SOD523 1.951 2.1 2.225 28 8.45 9 10.9 1 28 0.6 0.75 470 9 2 1 28 10
BB179B SOD523 1.9 2.1 2.25 28 8.45 9 10 1 28 0.6 0.75 470 9 2 1 28 10
BB179BLX SOD882T 1.9 - 2.25 28 - 9 - 1 28 0.65 - 470 9 2 1 28 10
BB179LX SOD882T 1.95 2.1 2.22 28 8.45 9 10.9 1 28 0.65 - 470 30 2 1 28 5
BB184 SOD523 1.87 2 2.13 10 6 7 - 1 10 0.65 - 470 9 2 1 10 5
BB189 SOD523 1.89 2.04 2.18 25 6.3 7.3 - 2 25 0.65 0.7 470 9 1.8 2 25 10
Unmatched
BB135 SOD323 1.7 - 2.1 28 8.9 - 12 0.5 28 - 0.75 470 9 - - - -
Bold = Highly recommended product
NEW : Varicap selection guide on www.nxp.com/varicaps
Easy-to-use parametric filters help you to choose
the right varicap for your design.
65NXP Semiconductors RF Manual 14th edition
TV / VCR / DVD / HDD varicap diodes - VHF tuning
Type Package
@ f = 1 MHz rs
typ
rs
max @ f = @ Cd
=∆Cd/
Cd
@ V1
=
@ V2
=@ Ns
=
Cd
min
Cd
typ
Cd
max
@ VR
=Cd1/
Cd2
min
Cd1/
Cd2
typ
Cd1/
Cd2
max
@ V1
=
@ V2
=
(pF) (pF) (pF) (V) (V) (V) (Ω) (Ω) (MHz) (pF) (V) (V)
Matched
BB148 SOD323 2.4 2.6 2.75 28 14.5 15 - 1 28 - 0.9 100 12 2 0.5 28 10
BB152 SOD323 2.48 2.7 2.89 28 20.6 22 - 1 28 1 1.2 100 30 2 1 28 10
BB153 SOD323 2.361 2.6 2.754 28 13.5 15 - 1 28 0.65 0.8 100 30 2 1 28 10
BB178 SOD523 2.361 2.6 2.754 28 13.5 15 - 1 28 0.65 0.8 100 30 2 1 28 10
BB178LX SOD882T 2.36 2.6 2.75 28 13.5 15 - 1 28 0.7 - 470 30 2 1 28 5
BB182 SOD523 2.48 2.7 2.89 28 20.6 22 - 1 28 1 1.2 100 30 2 1 28 10
BB182LX SOD882T 2.48 2.7 2.89 28 - 22 - 1 28 1 - 100 30 2 1 28 10
BB187 SOD523 2.57 2.75 2.92 25 11 - - 2 25 - 0.75 470 - 2 2 25 10
BB187LX SOD882T 2.57 2.75 2.92 25 11 - - 2 25 - 0.75 470 - 2 2 25 10
Unmatched
BB131 SOD323 0.7 - 1.055 28 12 - 16 0.5 28 - 3 470 9 - - - -
BB181 SOD523 0.7 - 1.055 28 12 - 16 0.5 28 - 3 470 9 - - - -
BB181LX SOD882T 0.7 - 1.055 28 - 14 - 0.5 28 2 - 470 9 - - - -
BBY40 SOT23 4.3 - 6 25 5 - 6.5 3 25 - 0.7 200 25 - - - -
Bold = Highly recommended product
3.2.2 PIN diodes
Why choose NXP Semiconductors’ PIN diodes:
` Broad portfolio
` Unrivalled performance
` Short leadtimes
` Low series inductance
` Low insertion loss
` Low capacitance
PIN diodes : typical rD @ 1 mA ≤ 2, switching diodes
Type Package Number of
diodes Conf VR max
(V)
IF max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA @ VR
= 0 V @ VR = 1 V @ VR = 20 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
typ
(pF)
Cd max
(pF)
BAP65LX SOD882T 1 SG 30 100 - - 0.94 - 0.49 0.9 0.61 0.48 0.85 0.37 -
BAP65-02 SOD523 1 SG 30 100 - - 1 - 0.56 0.9 0.65 0.55 0.9 0.375 -
BAP65-03 SOD323 1 SG 30 100 - - 1 - 0.56 0.9 0.65 0.55 0.9 0.375 -
BAP65-05 SOT23 2 CC 30 100 - - 1 - 0.56 0.9 0.7 0.575 0.9 0.425 -
BAP65-05W SOT323 2 CC 30 100 - - 1 - 0.56 0.9 0.7 0.575 0.9 0.425 -
BAP63LX SOD882T 1 SG 50 100 2.3 3.3 1.87 3 1.19 1.8 0.34 0.29 - 0.24 0.3
BAP63-02 SOD523 1 SG 50 100 2.5 3.5 1.95 3 1.17 1.8 0.36 0.32 - 0.25 0.32
BAP63-03 SOD323 1 SG 50 100 2.5 3.5 1.95 3 1.17 1.8 0.4 0.35 - 0.27 0.32
BAP63-05W SOT323 2 CC 50 100 2.5 3.5 1.95 3 1.17 1.8 0.4 0.35 - 0.3 0.35
NEW :
Pin diode selection guide on www.nxp.com/pindiodes
Easy-to-use parametric filters help you to choose the
right pin diode for your design.
brb407
r
D
(Ω)
10−1102
101
200
100
600
500
400
300
700
Cd
(fF)
0
BAP65LX BAP65LX
BAP50LXBAP63LX
BAP63LX
BAP1321LX
BAP51LX
BAP142LX
BAP64LX
BAP1321LX BAP51LX
BAP142LX
BAP50LX
BAP64LX
BAP70-02
BAP70-02
Freq = 100 MHz, Cd @ VR = 0 V
rD @ 0.5 mA rD @ 10 mA
brb408
Insertion Loss (dB)
10−210110−1
10
15
5
20
25
Isolation
(dB)
0
BAP51LX
BAP70-20
BAP50LX
BAP64LX
BAP51LX
BAP142LX
BAP1321LX
BAP63LX
BAP65LX BAP65LX
BAP63LX
BAP1321LX
BAP142LX
BAP64LX
BAP50LX BAP70-02
Freq = 1800 MHz, Isolation @ VR = 0 V
Insertion Loss @ 0.5 mA
Insertion Loss @ 10 mA
Look for more graphs showing the Pin diode line-up at other
frequencies on our web site: www.nxp.com/pindiodes
66 NXP Semiconductors RF Manual 14th edition
PIN diodes : typical rD @ 1 mA = 2.2 - 2.4, switching diodes
Type Package Number of
diodes Conf VR max
(V)
IF max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA @ VR
= 0 V @ VR = 1 V @ VR = 20 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
typ
(pF)
Cd max
(pF)
BAP55LX SOD882T 1 SG 50 100 3.3 4.5 2.2 3.3 0.8 1.2 0.28 0.23 - 0.18 0.28
BAP1321-02 SOD523 1 SG 60 100 3.4 5 2.4 3.6 1.2 1.8 0.4 0.35 0.45 0.25 0.32
BAP1321-03 SOD323 1 SG 60 100 3.4 5 2.4 3.6 1.2 1.8 0.4 0.35 0.45 0.25 0.32
BAP1321-04 SOT23 2 SR 60 100 3.4 5 2.4 3.6 1.2 1.8 0.42 0.375 0.45 0.275 0.325
BAP1321LX SOD882T 1 SG 60 100 3.3 5 2.4 3.6 1.2 1.8 0.32 0.27 0.38 0.21 0.28
BAP142LX SOD882T 1 SG 50 100 3.3 5 2.4 3.6 1 1.8 0.25 0.22 - 0.16 0.26
PIN diodes : typical rD @ 1 mA = 3.2 - 3.6, switching diodes
Type Package Number
of diodes Conf VR max
(V)
IF max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA @ VR
= 0 V @ VR = 1 V @ VR = 20 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
typ
(pF)
Cd max
(pF)
BAP51LX SOD882T 1 SG 60 100 4.9 9 3.2 6.5 1.4 2.5 0.3 0.22 0.4 0.17 0.3
BAP51-02 SOD523 1 SG 60 50 5.5 9 3.6 6.5 1.5 2.5 0.4 0.3 0.55 0.2 0.35
BAP51-03 SOD323 1 SG 50 50 5.5 9 3.6 6.5 1.5 2.5 0.4 0.3 0.55 0.2 0.35
BAP51-04W SOT323 2 SR 50 50 5.5 9 3.6 6.5 1.5 2.5 0.4 0.3 0.55 0.2 0.35
BAP51-05W SOT323 2 CC 50 50 5.5 9 3.6 6.5 1.5 2.5 0.4 0.3 0.55 0.2 0.35
BAP51-06W SOT323 2 CA 50 50 5.5 - 3.6 - 2 - 0.4 0.3 - 0.2 -
PIN diodes : typical rD @ 1 mA = 10, attenuator/swithcing diodes
Type Package Number
of diodes Conf VR max
(V)
IF max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA @ VR =
0 V @ VR = 1 V @ VR = 20 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
typ
(pF)
Cd max
(pF)
BAP64Q SOT753 4 SR 100 100 20 40 10 20 2 3,8 0.52 0.37 - 0.23 0.35
BAP64-02 SOD523 1 SG 175 100 20 40 10 20 2 3.8 0.48 0.35 - 0.23 0.35
BAP64-03 SOD323 1 SG 175 100 20 40 10 20 2 3.8 0.48 0.35 - 0.23 0.35
BAP64-04 SOT23 2 SR 175 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35
BAP64-04W SOT323 2 SR 100 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35
BAP64-05 SOT23 2 CC 175 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35
BAP64-05W SOT323 2 CC 100 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35
BAP64-06 SOT23 2 CA 175 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35
BAP64-06W SOT323 2 CA 100 100 20 40 10 20 2 3.8 0.52 0.37 - 0.23 0.35
PIN diodes : typical rD @ 1 mA = 14 - 16, attenuator diodes
Type Package Number
of diodes Conf VR max
(V)
IF
max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA @ VR =
0 V @ VR = 1 V Cd
typ
(pF)
Cd
max
(pF)
@ VR =
(V)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
BAP50-02 SOD523 1 SG 50 50 25 40 14 25 3 5 0.4 0.3 0.55 0.22 0.35 5
BAP50-03 SOD323 1 SG 50 50 25 40 14 25 3 5 0.4 0.3 0.55 0.2 0.35 5
BAP50-04 SOT23 2 SR 50 50 25 40 14 25 3 5 0.45 0.35 0.6 0.3 0.5 5
BAP50-04W SOT323 2 SR 50 50 25 40 14 25 3 5 0.45 0.35 0.6 0.3 0.5 5
BAP50-05 SOT23 2 CC 50 50 25 40 14 25 3 5 0.45 0.3 0.5 0.35 0.6 1
BAP50-05W SOT323 2 CC 50 50 25 40 14 25 3 5 0.45 0.35 0.6 0.3 0.5 5
BAP50LX SOD882T 1 SG 50 50 26 40 14 25 3 5 0.4 0.28 0.55 0.19 0.35 5
BAP64LX^ SOD882T 1 SG 60 100 31 50 16 26 2.6 4.4 0.48 0.34 - 0.17 0.3 20
^ = attenuator / switching diode
PIN diodes : typical rD @ 1 mA = 40, attenuator diodes
Type Package Number
of diodes Conf VR max
(V)
IF max
(mA)
@ f = 100 MHz @ f = 1 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA @ VR
= 0 V @ VR = 1 V @ VR = 20 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
max
(pF)
Cd
typ
(pF)
BAP70Q SOT753 4 SR 50 100 77 100 40 50 5.4 7 0.6 0.43 - 0.25 0.3
BAP70-02 SOD523 1 SG 50 100 77 100 40 50 5.4 7 0.57 0.4 - 0.2 0.25
BAP70-03 SOD323 1 SG 50 100 77 100 40 50 5.4 7 0.57 0.4 - 0.2 0.25
BAP70-04W SOT323 2 SR 50 100 77 100 40 50 5.4 7 0.6 0.43 - 0.25 0.3
BAP70-05 SOT23 2 CC 50 100 77 100 40 50 5.4 7 0.6 0.43 - 0.25 0.3
BAP70AM SOT363 4 SR 50 100 77 100 40 50 5.4 7 0.57 0.4 - 0.2 0.25
Bold = highly recommended product SG = Single CC = Common Cathode
Bold Red = New, highly recommended product SR = Series CA = Common Anode
67NXP Semiconductors RF Manual 14th edition
3.2.3 Band-switch diodes
Why choose NXP Semiconductors’ bandswitch diodes:
`Reliable volume supplier
`Short leadtimes
`Low series Inductance
`Low Insertion loss
`Low capacitance
`High reverse Isolation
Type Package VR max
(V)
IF max
(mA)
rD max
(Ω)
@ IF =
(mA)
@ f =
(MHz)
Cd max
(pF)
@ VR =
(V)
@ f =
(MHz)
BA277 SOD523 35 100 0.7 2 100 1.2 6 1
BA591 SOD323 35 100 0.7 3 100 0.9 3 1
BA891 SOD523 35 100 0.7 3 100 0.9 3 1
BAT18 SOT23 35 100 0.7 5 200 1 20 1
Bold = Highly recommended product
3.2.4 Schottky diodes
Why choose NXP Semiconductors’ schottky diodes
`(Very) low diode capacitance
`(Very) low forward voltage
`Single and triple-isolated diode
`(Ultra / very) small package
Applications
` Digital applications:
- ultra high-speed switching
- clamping circuits
` RF applications:
- diode ring mixer
- RF detector
- RF voltage doubler
Low-capacitance Schottky diodes
Type Package Configuration VR max.
(V)
IF max.
(mA)
VF max.
(mV)
CD max.
(pF)
BAT17 SOT23 single 4 30 450 @ IF = 1 mA 1 @ VR = 0 V
PMBD353 SOT23 dual series 4 30 450 @ IF = 1 mA 1 @ VR = 0 V
PMBD354^ SOT23 dual series 4 30 450 @ IF = 1 mA 1 @ VR = 0 V
1PS76SB17 SOD323 single 4 30 450 @ IF = 1 mA 1 @ VR = 0 V
1PS66SB17 SOT666 triple isolated 4 30 450 @ IF = 1 mA 1 @ VR = 0 V
1PS79SB17 SOD523 single 4 30 450 @ IF = 1 mA 1 @ VR = 0 V
1PS88SB82 SOT363 triple isolated 15 30 340 @ IF = 1 mA 1 @ VR = 0 V
1PS70SB82 SOT323 single 15 30 340 @ IF = 1 mA 1 @ VR = 0 V
1PS70SB84 SOT323 dual series 15 30 340 @ IF = 1 mA 1 @ VR = 0 V
1PS70SB85 SOT323 dual c.c 15 30 340 @ IF = 1 mA 1 @ VR = 0 V
1PS70SB86 SOT323 dual c.a. 15 30 340 @ IF = 1 mA 1 @ VR = 0 V
1PS66SB82 SOT666 triple isolated 15 30 340 @ IF = 1 mA 1 @ VR = 0 V
1PS10SB82 SOD882 single 15 30 340 @ IF = 1 mA 1 @ VR = 0 V
^ Diodes have matched capacitance
NEW :
Schottky diode selection guide on www.nxp.com/rfschottkydiodes
Easy-to-use parametric filters help you to choose the right schottky
diode for your design.
68 NXP Semiconductors RF Manual 14th edition
3.3 RF Bipolar transistors
3.3.1 Wideband transistors
Why choose NXP Semiconductors’ wideband transistors
`Broad portfolio (1st - 7th generation)
`Short leadtimes
`Smallest packages
`Volume delivery
bra510
100
10
1
fT
(GHz)
0.1 0.5 1 2 5 10 20 50 100 200 500 1000
IC (mA)
0.2
(1)
(3)
(7) (9)
(27)
(25)
1st generation
2nd generation
3rd generation
4th generation
5th generation
7th generation
6th generation
(8) (10)
(18)
(15) (16)
(20) (21) (22) (23)
(29)
(38) (39) (40) (41)
(34) (35) (36) (37)
(32)
(33)
(26)
(30)
(31)
(11) (12)
(4)
(14)
(19)
Wideband transistors line-up per frequency
Wideband transistors
The fT-IC curve represents Transition Frequency (fT)
characteristics as a function of collector current (IC) for the six
generations of RF wideband transistors. A group of transistors
having the same collector current (IC) & similar transition
frequencies (fT) represents a curve. The curve number matches
products in the table, detailing their RF characteristics.
NEW : RF wideband transistor selection guide on
www.nxp.com/rftransistors
Easy-to-use parametric filters help you to choose the right RF wideband
transistor for your design.
PIN DECRIPTION
Type (see Fig.1)
1 collector
2 base
3 emitter
4 emitter
Type/X (see Fig.1)
1 collector
2 emitter
3 base
4 emitter
Type/XR (see Fig.2)
1 collector
2 emitter
3 base
4 emitter
21
34
Figure 1 Figure 2
69NXP Semiconductors RF Manual 14th edition
Wideband transistors (RF small signal)
RF power transistors for handheld equipment
Type
Package
VCEO (max)
(V)
IC (max)
(mA)
Ptot (max)
(mW)
Polarity
GUM (typ)
(dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
BFG10 SOT143 8 250 400 NPN 7 1900 1 3.6
BFG10/X SOT143 8 250 400 NPN 7 1900 1 3.6
BFG10W/X SOT343 10 250 400 NPN 7 1900 1 3.6
BLT50 SOT223 10 500 2000 NPN - - - -
BLT70 SOT223H 8 250 2100 NPN - - - -
BLT80 SOT223 10 250 2000 NPN - - - -
BLT81 SOT223 9.5 500 2000 NPN - - - -
RF wideband transistors generation 1 - 3
Type
Gemeration
Curve
Package
fT (typ) (GHz)
VCEO (max) (V)
IC (max) (mA)
Ptot (max) (mW)
Polarity
GUM (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
GUM (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
NF (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
NF (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
BFS17 1st 3 SOT23 1 15 25 300 NPN - - - - - - - - 4.5 500 2 5 - - - -
BFS17W 1st 3 SOT323 1.6 15 50 300 NPN - - - - - - - - 4.5 500 2 5 - - - -
BFT25 1st 1 SOT23 2.3 5 6.5 30 NPN 18 500 1 1 12 800 1 1 3.8 500 1 1 - - - -
BFG25A/X 2nd 18 SOT143B 5 5 6.5 32 NPN - - - - 18 1000 0.5 1 1.8 1000 0.5 1 - - - -
BFG25AW 2nd 18 SOT343N 5 5 6.5 500 NPN - - - - 16 2000 0.5 1 2 1000 1 1 - - - -
BFG25AW/X 2nd 18 SOT343N 5 5 6.5 500 NPN 16 1000 0.5 1 8 2000 0.5 1 2 1000 1 1 - - - -
BFG31 2nd 10 SOT223 5 -15 -100 1000 PNP 16 500 -70 -10 12 800 -70 -10 - - - - - - - -
BFG35 2nd 11 SOT223 4 18 150 1000 NPN 15 500 100 10 11 800 100 10 - - - - - - - -
BFG92A/X 2nd 7 SOT143B 5 15 25 400 NPN 16 1000 15 10 11 2000 15 10 2 1000 5 10 3 2000 5 10
BFG97 2nd 10 SOT223 5.5 15 100 1000 NPN 16 500 70 10 12 800 70 10 - - - - - - - -
BFQ149 2nd 10 SOT89 5 -15 -100 1000 PNP 12 500 -50 -10 - - - - 3.75 500 -50 -10 - - - -
BFQ18A 2nd 11 SOT89 4 18 150 1000 NPN - - - - - - - - - - - - - - - -
BFQ19 2nd 10 SOT89 5.5 15 100 1000 NPN 11.5 500 50 10 7.5 800 50 10 3.3 500 50 10 - - - -
BFR106 2nd 10 SOT23 5 15 100 500 NPN - - - - 11.5 800 30 6 3.5 800 30 6 - - - -
BFR92A 2nd 7 SOT23 5 15 25 300 NPN 14 1000 15 10 8 2000 15 10 3 2000 5 10 2.1 1000 5 10
BFR92AW 2nd 7 SOT323 5 15 25 300 NPN 14 1000 15 10 8 2000 15 10 2 1000 5 10 3 2000 5 10
BFS17A 2nd 4 SOT23 2.8 15 25 300 NPN - - - - 13.5 800 14 10 2.5 800 2 5 - - - -
BFS25A 2nd 18 SOT323 5 5 6.5 32 NPN - - - - 13 1000 0.5 1 1.8 1000 1 1 - - - -
BFT25A 2nd 18 SOT23 5 5 6.5 32 NPN - - - - 15 1000 0.5 1 1.8 1000 0.5 1 - - - -
BFT92 2nd 7 SOT23 5 -15 -25 300 PNP 18 500 -14 -10 - - - - 2.5 500 -5 -10 - - - -
BFT92W 2nd 7 SOT323 4 -15 -35 300 PNP 17 500 -15 -10 11 1000 -15 -10 2.5 500 -5 -10 3 1000 -5 -10
BFT93 2nd 9 SOT23 5 -12 -35 300 PNP 16.5 500 -30 -5 2.4 500 -10 -5 - - - -
BFT93W 2nd 9 SOT323 4 -12 -50 300 PNP 15.5 500 -30 -5 10 1000 -30 -5 2.4 500 -10 -5 3 1000 -10 -5
BFG135 3rd 16 SOT223 7 15 150 1000 NPN 16 500 100 10 12 800 100 10 - - - - - - - -
BFG198 3rd 15 SOT223 8 10 100 1000 NPN 18 500 50 8 15 800 50 8 - - - - - - - -
BFG590 3rd 22 SOT143B 5 15 200 400 NPN 13 900 80 4 7.5 2000 80 4 - - - - - - - -
BFG590/X 3rd 22 SOT143B 5 15 200 400 NPN 13 900 80 4 7.5 2000 80 4 - - - - - - - -
BFG591 3rd 22 SOT223 7 15 200 2000 NPN 13 900 70 12 7.5 2000 70 12 - - - - - - - -
BFG67 3rd 14 SOT143B 8 10 50 380 NPN 17 1000 15 8 10 2000 15 8 1.7 1000 15 8 2.5 2000 5 8
BFG67/X 3rd 14 SOT143B 8 10 50 380 NPN 17 1000 15 8 10 2000 15 8 1.7 1000 15 8 2.5 2000 5 8
BFG93A 3rd 8 SOT143B 6 12 35 300 NPN 16 1000 30 8 10 2000 30 8 1.7 1000 5 8 2.3 2000 5 8
BFG93A/X 3rd 8 SOT143B 6 12 35 300 NPN 16 1000 30 8 10 2000 30 8 1.7 1000 5 8 2.3 2000 5 8
BFG94 3rd 8 SOT223 6 12 60 700 NPN - - - - 13.5 1000 45 10 2.7 500 45 10 3 1000 45 10
BFQ591 3rd 22 SOT89 7 15 200 2250 NPN 11 900 70 12 5.5 2000 70 12 - - - - - - - -
BFQ67W 3rd 14 SOT323 8 10 50 300 NPN 13 1000 15 8 8 2000 15 8 1.3 1000 5 8 2.7 2000 15 8
BFR93A 3rd 8 SOT23 6 12 35 300 NPN 13 1000 30 8 7 2000 30 8 1.9 1000 5 8 3 2000 5 8
BFR94A^ 3rd 8 SOT23 6 12 35 300 NPN 13 1000 30 8 7 2000 30 8 1.9 1000 5 8 3 2000 5 8
BFR93AR 3rd 8 SOT23 6 12 35 300 NPN 13 1000 30 8 7 2000 30 8 1.9 1000 5 8 3 2000 5 8
BFR93AW 3rd 8 SOT323 5 12 35 300 NPN 13 1000 30 8 8 2000 30 8 1.5 1000 5 8 2.1 2000 5 8
BFR94AW^ 3rd 8 SOT323 5 12 35 300 NPN 13 1000 30 8 8 2000 30 8 1.5 1000 5 8 2.1 2000 5 8
Bold = Highly recommended product
Bold Red = New, highly recommended product
^ = automotive qualified
70 NXP Semiconductors RF Manual 14th edition
RF wideband transistors generation 4 - 4.5
Type
Gemeration
Curve
Package
fT (typ) (GHz)
VCEO (max) (V)
IC (max) (mA)
Ptot (max) (mW)
Polarity
GUM (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
NF (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
NF (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
PL(1dB) (typ) (dBmW)
@ VCE = (V)
@ f = (MHz)
@ IC = (mA)
IP3 (typ) (dBm)
@ IC = (mA)
@ VCE = (V)
BFG505 4th 19 SOT143B 9 15 18 150 NPN 13 2000 5 6 1.6 900 5 6 1.9 2000 1.25 6 4 6 900 5 10 5 6
BFG505/X 4th 19 SOT143B 9 15 18 150 NPN 13 2000 5 6 1.6 900 5 6 1.9 2000 1.25 6 4 6 900 5 10 5 6
BFG505W 4th 19 SOT343N 9 15 18 500 NPN 12 2000 5 6 1.6 900 5 6 1.9 2000 1.25 6 4 6 900 5 10 5 6
BFG505W/X 4th 19 SOT343N 9 15 18 500 NPN 12 2000 5 6 1.6 900 5 6 1.9 2000 1.25 6 4 6 900 5 10 5 6
BFG505W/XR 4th 19 SOT343R 9 15 18 500 NPN 12 2000 5 6 1.6 900 5 6 1.9 2000 1.25 6 4 6 900 5 10 5 6
BFG520 4th 20 SOT143B 9 15 70 300 NPN 13 2000 20 6 1.6 900 20 6 1.9 2000 5 6 17 6 900 20 26 20 6
BFG520/X 4th 20 SOT143B 9 15 70 300 NPN 13 2000 20 6 1.6 900 20 6 1.9 2000 5 6 17 6 900 20 26 20 6
BFG520/XR 4th 20 SOT143R 9 15 70 300 NPN 13 2000 20 6 1.6 900 20 6 1.9 2000 5 6 17 6 900 20 26 20 6
BFG520W 4th 20 SOT343N 9 15 70 500 NPN 11 2000 20 6 1.1 900 5 6 1.85 2000 5 6 17 6 900 20 26 20 6
BFG520W/X 4th 20 SOT343N 9 15 70 500 NPN 11 2000 20 6 1.1 900 5 6 1.85 2000 5 6 17 6 900 20 26 20 6
BFG540 4th 21 SOT143B 9 15 120 400 NPN 11 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
BFG540/X 4th 21 SOT143B 9 15 120 400 NPN 11 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
BFG540/XR 4th 21 SOT143R 9 15 120 400 NPN 11 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
BFG540W 4th 21 SOT343N 9 15 120 500 NPN 10 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
BFG540W/X 4th 21 SOT343N 9 15 120 500 NPN 10 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
BFG540W/XR 4th 21 SOT343R 9 15 120 500 NPN 10 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
BFG541 4th 21 SOT223 9 15 120 650 NPN 9 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
BFM505 4th 19 SOT363A 9 8 18 500 NPN 10 2000 5 3 1.1 900 1 3 1.9 2000 5 3 - - - - - - -
BFM520 4th 20 SOT363A 9 8 70 1000 NPN 9 2000 20 3 1.2 900 5 3 1.9 2000 5 3 - - - - - - -
BFQ540 4th 21 SOT89 9 15 120 1,200 NPN - - - - 1.9 900 40 8 - - - - - - - - - - -
BFQ67 4th 14 SOT23 8 10 50 300 NPN 8 2000 15 8 1.7 1000 15 8 2.7 2000 15 8 - - - - - - -
BFR505 4th 19 SOT23 9 15 18 150 NPN 10 2000 5 6 1.2 900 5 6 1.9 2000 5 6 4 6 900 5 10 5 6
BFR505T 4th 19 SOT416 9 15 18 150 NPN 10 2000 5 6 1.2 900 1.25 6 1.9 2000 1.25 6 5 6 900 5 10 5 6
BFR520 4th 20 SOT23 9 15 70 300 NPN 9 2000 20 6 1.1 900 5 6 1.9 2000 5 6 17 6 900 20 26 20 6
BFR520T 4th 20 SOT416 9 15 70 150 NPN 9 2000 20 6 1.1 900 5 6 1.9 2000 5 6 17 6 900 20 26 20 6
BFR540 4th 21 SOT23 9 15 120 500 NPN 7 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
BFS505 4th 19 SOT323 9 15 18 150 NPN 10 2000 5 6 1.2 900 1.25 6 1.9 2000 1.25 6 4 6 900 5 10 5 6
BFS520 4th 20 SOT323 9 15 70 300 NPN 9 2000 20 6 1.1 900 5 6 1.9 2000 5 6 17 6 900 20 26 20 6
BFS540 4th 21 SOT323 9 15 120 500 NPN 8 2000 40 8 1.3 900 10 8 2.1 2000 10 8 21 8 900 40 34 40 8
PBR941 4th 20 SOT23 8 10 50 360 NPN 9.5 2000 15 6 1.4 1000 5 6 2 2000 5 6 - - - - - - -
PBR951 4th 21 SOT23 8 10 100 365 NPN 8 2000 30 6 1.3 1000 5 6 2 2000 5 6 - - - - - - -
PRF947 4th 20 SOT323 8.5 10 50 250 NPN 10 2000 15 6 1.5 1000 5 6 2.1 2000 5 6 - - - - - - -
PRF949 4th 20 SOT416 9 10 50 150 NPN 10 2000 15 6 1.5 1000 5 6 2.1 2000 5 6 - - - - - - -
PRF957 4th 21 SOT323 8.5 10 100 270 NPN 9.2 2000 30 6 1.3 1000 5 6 1.8 2000 5 6 - - - - - - -
BFG310/XR 4.5 30 SOT143R 14 6 10 60 NPN 18 1800 5 3 - - - - 1 2000 1 3 1.8 3 1800 5 8.5 5 3
BFG310W/XR 4.5 30 SOT343R 14 6 10 60 NPN 18 1800 5 3 - - - - 1 2000 1 3 1.8 3 1800 5 8.5 5 3
BFG325/XR 4.5 31 SOT143R 14 6 35 210 NPN 18.3 1800 15 3 - - - - 1.1 2000 3 3 8.7 3 1800 15 19.4 15 3
BFG325W/XR 4.5 31 SOT343R 14 6 35 210 NPN 18.3 1800 15 3 - - - - 1.1 2000 3 3 8.7 3 1800 15 19.4 15 3
RF wideband transistors generation 5 - 7
Type
Gemeration
Curve
Package
fT (typ) (GHz)
VCEO (max) (V)
IC (max) (mA)
Ptot (max) (mW)
Polarity
GUM (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
NF (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
NF (typ) (dB)
@ f = (MHz)
@ IC = (mA)
@ VCE = (V)
PL(1dB) (typ) (dBmW)
@ VCE = (V)
@ f = (MHz)
@ IC = (mA)
IP3 (typ) (dBm)
@ IC = (mA)
@ VCE = (V)
BFG21W 5th 32 SOT343R - 4.5 500 600 NPN 10 1900 1 3.6 - - - - - - - - - - - - - - -
BFG403W 5th 25 SOT343R 17 4.5 3.6 16 NPN 22 2000 3 2 1 900 1 2 1.6 2000 1 2 5 1 900 1 6 1 1
BFG410W 5th 26 SOT343R 22 4.5 12 54 NPN 21 2000 10 2 0.9 900 1 2 1.2 2000 1 2 5 2 2000 10 15 10 2
BFG424F 5th 27 SOT343F 25 4.5 30 135 NPN 23 2000 25 2 0.8 900 2 2 1.2 2000 2 2 12 2 2000 25 22 25 2
BFG424W 5th 27 SOT343R 25 4.5 30 135 NPN 22 2000 25 2 0.8 900 2 2 1.2 2000 2 2 12 2 2000 25 22 25 2
BFG425W 5th 27 SOT343R 25 4.5 30 135 NPN 20 2000 25 2 0.8 900 2 2 1.2 2000 2 2 12 2 2000 25 22 25 2
BFG480W 5th 29 SOT343R 21 4.5 250 360 NPN 16 2000 80 2 1.2 900 8 2 1.8 2000 8 2 20 3.6 2000 1 28 80 2
BFU610F* 6th 34 SOT343F 40 5 10 50 NPN 21 5800 8 2 0.75 2400 1 2 1.4 5800 1 2 - - - - 14 8 5
BFU630F* 6th 35 SOT343F 40 5 30 130 NPN 28 2400 25 2 0.58 1500 5 2 0.73 2400 5 2 - - - - 23 25 5
BFU660F* 6th 36 SOT343F 40 5 70 200 NPN 28.5 1500 60 2 0.6 1500 20 2 0.75 2400 20 2 - - - - 30 60 5
BFU690F* 6th 37 SOT343F 40 5 100 300 NPN 25.6 1500 90 2 0.7 1500 50 2 0.9 2400 50 2 - - - - 35 90 5
BFU710F* 7th 38 SOT343F 70 2.8 10 30 NPN 16.5 12000 8 2 0.9 5800 2 2 1.7 12000 2 2 - - - - 14.5 8 2
BFU725F/N1
7th 33 SOT343F 70 2.8 40 136 NPN 18 5800 25 2 0.47 2400 5 2 0.7 5800 5 2 8 2 5800 25 19 25 2
BFU730F* 7th 39 SOT343F 70 2.8 30 130 NPN 20.3 5800 25 2 0.56 2400 5 2 1 5800 5 2 - - - - 20.5 25 2
BFU760F* 7th 40 SOT343F 70 2.8 70 200 NPN 25 2400 60 2 0.5 1500 20 2 0.6 2400 20 2 - - - - 23 60 2
BFU790F* 7th 41 SOT343F 70 2.8 100 250 NPN 20.4 2400 90 2 0.56 1500 50 2 0.7 2400 50 2 - - - - 24 90 2
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Bold = Highly recommended product
Bold Red = New, highly recommended product
71NXP Semiconductors RF Manual 14th edition
3.4 RF ICs
3.4.1 MMICs
Why choose NXP Semiconductors’ MMICs
`Reduced RF component count
`Easy circuit design-in
`Reduced board size
`Short time-to-market
`Broad portfolio
`Volume delivery
`Short leadtimes
`Excellent gain flatness^
`No output inductor necessary anymore^
^ = only for new satellite IF gain blocks, BGA28xx-family.
General-purpose wideband amplifiers (50 Ohm gain blocks)
Type Package
@ Fu(1) @ 1 GHz Gain(3) (dB) @ Limits
Vs Is @-3 dB NF Psat Gain(3) P1dB OIP3 100 2.2 2.6 3.0 Vs Is Ptot
(V) (mA) (GHz) (dB) (dBm) (dB) (dBm) (dBm) MHz GHz GHz GHz (V) (mA) (mW)
BGA2711 SOT363 5 12.6 3.6(2) 4.8 2.8 13.1 -0.7 8.3 13.0 14.1 13.8 12.7 6 20 200
BGA2748 SOT363 3 5.7 1.9 1.9(2) -2.3 21.8 -9.2 -1.9 14.8 17.6 15.0 11.9 4 15 200
BGA2771 SOT363 3 33.3 2.4 4.5 13.2(2) 21.4 12.1 21.9 20.3 20.4 17.9 15.5 4 50 200
BGA2776 SOT363 5 24.4 2.8 4.9 10.5 23.2(2) 7.2 18.6 22.4 23.2 21.8 19.3 6 34 200
BGA2709 SOT363 5 23.5 3.6 4.0 12.5 22.7 8.3 22 22.2 23.0 22.1 21.1 6 35 200
BGA2712 SOT363 5 12.3 3.2 3.9 4.8 21.3 0.2 11 20.8 21.9 21.2 19.3 6 25 200
BGM1011 SOT363 5 25.5 - 4.7 13.8 30(2) 12.2 23 25.0 37.0 32.0 28.0 6 35 200
BGM1012 SOT363 3 14.6(2) 3.6 4.8 9.7 20.1 5.6 18 19.5 20.4 19.9 18.7 4 50 200
BGM1013 SOT363 5 27.5 2.1 4.6 14.0 35.5(2) 12.0 22.7 35.2 31.8 29.7 26.1 6 35 200
BGM1014 SOT363 5 21.0(2) 2.5 4.2 12.9 32.3 11.2 20.5 30.0 34.1 30.5 26.4 6 30 200
BGA2714 SOT363 3 4.58 2.7 2.2 -3.4 20.4 -7.9 2.1 20.8 20.8 19.4 16.8 4 10 200
BGA2715 SOT363 5 4.3(2) 3.3 2.6 -4.0 21.7 -8.0 2.3 13.3 23.3 22.1 20.1 6 8 200
BGA2716 SOT363 5 15.9(2) 3.2 5.3 11.6 22.9 8.9 22.2 22.1 22.8 22.1 20.8 6 25 200
BGA2717 SOT363 5 8.0 3.2 2.3(2) 1.4 23.9 -2.6 10.0 18.6 25.1 24.0 22.1 6 15 200
Notes: (1) Upper -3 dB point, to gain at 1 GHz. (2) Optimized parameter (3) Gain = |S21|2
New general-purpose wideband amplifiers (50 Ohm gain blocks)
Type Package
@Fu @ 1 GHz Gain (dB) @
VsIs@-3 dB NF Gain OIP3 250 950 1550 2150
(V) (mA) (GHz) (dB) (dB) (dBm) (MHz) (MHz) (MHz) (MHz)
BGA2800 SOT363 3.3 9.7 >3 3.4 20.2 11.5 20.0 20.2 20.6 20.6
BGA2801 SOT363 3.3 12.4 3.0 3.6 22.1 13.6 22.3 22.1 23.0 23.8
BGA2815 SOT363 3.3 16.4 >3 3.4 25.4 18.2 26.2 25.4 25.5 25.8
BGA2816 SOT363 3.3 19.6 2.3 2.8 31.2 16.1 32.0 31.2 30.6 28.7
BGA2850 SOT363 5.0 7.7 >3 3.9 23.3 8.7 22.9 23.2 23.9 24.0
BGA2865 SOT363 5.0 22.7 2.6 3.7 31.9 20.9 31.2 31.8 32.6 31.4
BGA2866 SOT363 5.0 15.4 >3 3.6 23.4 17.7 23.0 23.3 24.0 24.3
No output inductor necessary when using the new BGA28xx IF Gain blocks at the output stage.
Bold Red = New, highly recommended product
2-stage variable gain linear amplifier
Type Package
@ Frequency
Range
@ 900 MHz @1900 MHz Limits
Vs Is Gain(1) DG(2) P1dB ACPR Gain(1) DG(2) P1dB ACPR Vs Is Ptot
(V) (mA) (dB) (dB) (dBm) (dBc) (dB) (dB) (dBm) (dBc) (V) (mA) (mW)
BGA2031/1 SOT363 3 51 800-2500 24 62 11 49 23 56 13 49 3.3 77 200
Notes: (1) Gain = GP, power gain. (2) DG = Gain control range
NEW : RF MMIC selection guide on www.nxp.com/mmics Easy-to-use
parametric filters help you to choose the right zRF MMIC for your design.
72 NXP Semiconductors RF Manual 14th edition
Wideband linear mixer
Type Package
@ RF Input IF Output @ 880 MHz @1900 MHz Limits
Vs Is Frequency
Range
Frequency
Range
NF Gain(1) OIP3 NF Gain(1) OIP3 Vs Is Ptot
(V) (mA) (dB) (dB) (dBm) (dB) (dB) (dBm) (V) (mA) (mW)
BGA2022 SOT363 3 6 800 - 2500 50 - 500 9 5 4 9 6 10 4 10 40
Notes: (1) Gain = GP, power gain. (2) DG = Gain control range
Low-noise wideband amplifiers
Type Package
@ @ 900 MHz @1800 MHz Gain(3) (dB) @ Limits
Vs Is NF Gain IIP3 NF Gain IIP3 100 1 2.6 3.0 Vs Is Ptot
(V) (mA) (dB) (dB) (dBm) (dB) (dB) (dBm) MHz GHz GHz GHz (V) (mA) (mW)
BGA2001 SOT343R 2.5 4 1.3 22(1) -7.4 1.3 19.5(1) -4.5 20 17.1 11.6 10.7 4.5 30 135
BGA2002^ SOT343R 2.5 4 1.3 22(1) -7.4 1.3 19.5(1) -4.5 20 17.1 11.6 10.7 4.5 30 135
BGA2003 SOT343R 2.5 10(2) 1.8 24(1) -6.5 1.8 16(1) -4.8 26 18.6 11.1 10.1 4.5 30 135
BGA2011 SOT363 3 15 1.5 19(3) 10 - - - 24 14.8 8 6.5 4.5 30 135
BGA2012 SOT363 3 7 - - - 1.7 16(3) 10 22 18.2 11.6 10.5 4.5 15 70
Notes: (1) MSG (2) Adjustable bias (3) |S21|2
^ = Automotive qualified
General-purpose, med. power ampl. (50 ohm gain blocks)
Type Package
@ @ 900 MHz @1800 MHz Gain(2) Limits
Vs (1) Is NF Gain(2) OIP3 P1dB NF Gain(2) OIP3 P1 dB 2.5 Vs (1) Is Ptot
(V) (mA) (dB) (dB) (dBm) (dBm) (dB) (dB) (dBm) (dBm) GHz (V) (mA) (mW)
BGA6289 SOT89 4.1 84 3.5 15 31 17 3.7 13 28 15 12 6 120 480
BGA6489 SOT89 5.1 78 3.1 20 33 20 3.3 16 30 17 15 6 120 480
BGA6589 SOT89 4.8 81 3.0 22 33 21 3.3 17 32 20 15 6 120 480
Notes: (1) Device voltage without bias resistor. (2) Gain = |S21|2
Medium power amplifier MMICs for all 400 - 2700 MHz applications
supply shutdown control RF performance RF performance
Type Package fVcc Icc VI(D)L(SHDN) VI(D)H(SHDN) II(D)L(SHDN) Typ @ f = 940 MHz Typ @ f = 1960 MHz
Typ Typ Max Min Max Min Max Typ Gp PL(1dB) OIP3 NF Gp PL(1dB) OIP3 NF
(MHz) (V) (mA) (mA) (V) (V) (V) (V) (µA) dB dBm dBm dB dB dBm dBm dB
BGA7124 SOT908 leadless 400 - 2700 5 130 200 0 0.7 2.5 Vbias 4 22 25 38 5 16 24 38 5
BGA7024 SOT89 leaded 400 - 2700 5 110 - - - - - - 22 24 38 3 16 25 38 4
BGA7127 SOT908 leadless 400 - 2700 5 180 325 0 0.7 2.5 Vbias 4 20 28 44 3 13 28 43 5
BGA7027 SOT89 leaded 400 - 2700 5 170 - - - - - - 19 28 41 3 12 28 43 4
BGA7130* SOT908 leadless 400 - 2700 5 - - 0 0.7 2.5 Vbias 4 18 30 45 4 12 30 45 4
BGA7133* SOT908 leadless 400 - 2700 5 - - 0 0.7 2.5 Vbias 4 18 33 46 4 12 33 47 4
The specications of the BGA7130 and BGA7133 are target specications until development is completed.
SiGe:C MMICs (for e.g. GPS):
Type Package
Supply
voltage Supply current
@ 1.575 GHz
Insertion
power gain
Noise
figure
Input power at 1 dB gain
compression
Input third-order intercept point
f1 = 1713 MHz, f2 = 1851 MHz
Vcc Icc |s21|2 NF PI(1 dB) IP3i
V mA dB dB dBm dBm
Min Max Min Typ Max Min Typ Max Typ
Vcc =
1.8 V,
Min
Vcc =
1.8 V,
Typ
Vcc =
2.5 V,
Icc =
5 mA
Vcc =
2.85 V,
Min
Vcc =
2.85 V
,
Typ
Vcc =
1.8 V,
Min
Vcc =
1.8 V,
Typ
Vcc =
2.5 V,
Icc =
5 mA
Vcc =
2.85 V,
Min
Vcc =
2.85
V,
Typ
BGU7003 SOT891 2.2 2.85 3 - 15 16 18,3 20 0,8 - - -20 - - - - 0 - -
BGU7005 SOT886 1.5 2.85 - 4.5 - - 16.5** - 0,9 -14 -11 - -11 -8 5 9 - 5 12
BGU7006* WLCSP*** 1.5 2.85 - 3.8 - - 16.5** - 0,9 -14 -11 - -12 -9 1 4 - 5 9
BGU7007* SOT886 1.5 2.85 - 4.8 - - 18**** - 0,9 -14 -11 - -11 -8 5 9 - 5 12
SiGe:C MMICs for Set-Top-Boxes
Type Package
Frequency
range Mode
@Gain (1) NF PL(1dB) OIP3 FL (2) RLout RLin
VCC ICC
(MHz) (V) (mA) (dB) (dB) (dBm) (dBm) (dB) (dB) (dB)
BGU7033* SOT363 40 - 1000
GP 10 dB 5 43 10 4.5 14 29 -0.2 12 18
GP 5 dB 5 43 5 6 9 29 -0.2 12 17
Bypass 5 4 -2 2.5 10 29 -0.2 8 8
BGU7032* SOT363 40 - 1000 GP 10 dB 5 43 10 4.5 13 29 -0.2 12 18
Bypass 5 4 -2 2.5 10 29 -0.2 8 8
BGU7031* SOT363 40 - 1000 GP 10 dB 5 43 10 4.5 13 29 -0.2 12 18
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Bold Red = New, highly recommended product
Notes: (1) Gain = GP, power gain, (2) Flatness of frequency response = FL
73NXP Semiconductors RF Manual 14th edition
SiGe:C MMICs Variable Gain Amplifiers
Type Package Control interface Vsup Isup frequency Gain
range
@ minimum attenuation @ maximum attenuation
Gain OIP3 NF Gain OIP3 NF
(V) (mA) (MHz) (dB) (dB) (dBm) (dB) (dB) (dBm) (dB)
BGA7202* SOT617 Analog 5 710 700 … 1450 27 24 45 6.5 -3 23.5 33.5
1450 … 2200 27 24 45 6.5 -3 23.5 33.5
BGA7203* SOT617 Analog 5 710 2100 … 2750 27 24 45 6.5 -3 23.5 33.5
BGA7204* SOT617 Parallel, serial 5 160 700 … 2750 31.5 24 37 6.5 -7.5 19 38
BGA7350* SOT617 Parallel, digital 5 240 50 … 250 24 18.5 - 6 -5.5 50 30
BGA7351* SOT617 Parallel, digital 5 240 28 18.5 - 6 -9.5 50 34
BGA7350 and BGA7351 are dual VGA products. The VGA function is twice on the chip.
BGA7350 and BGA7351 are designed for receiving.
SiGe:C MMIC LNA's for wireless infrastructures
Type Package Vsupply (typ) @ IC = @ f = Gass (typ) NF (typ) PL(1dB) (typ) OIP3 (typ) IRL ORL
(V) (mA) (MHz) (dB) (dB) (dBmW) (dBm) (dB) (dB)
BGU7051* SOT650 3.3 65 900 20.9 0.7 17.8 34 22 15.8
BGU7052* SOT650 3.3 65 1900 20.1 0.9 18 35.5 20 15
BGU7053* SOT650 3.3 65 2500 20 1 18 35 20 15
BGU7054* SOT650 3.3 65 3500 20 1.1 18 35 20 15
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Bold Red = New, highly recommended product
3.4.2 Low noise LO generators for VSAT and general microwave applications
Why choose NXP Semiconductors’ low noise LO generators
`Lowest total cost of ownership
`Alignment free concept
`Easy circuit design-in
`Improved LO stability
Low noise LO generators for VSAT applications
Type Package
fIN(REF) VCC ICC PLL phase noise @ N=64,
@100 kHz
PLL Output buffer Input
fo(RF) Po RLout(RF) Si
Typ Typ Max Typ Max Min
MHz V mA dBc/Hz (GHz) dBm dB dBm
TFF1003HN SOT616 50~815 3.3 100 -92 12.8~13.05 -5 -10 -10
TFF1007HN* SOT616 230.46~234.38 3.3 100 -104 14.75~15 -3 -10 -10
Low noise LO generators for general microwave applications
Type Package
fIN(REF) VCC ICC
PLL phase noise @
N=64
PLL Output buffer Input
fo(RF) Po RLout(RF) S
i
Typ Typ @ 100 kHz @ 10 MHz Min Typ Max Typ Max Min
MHz V mA dBc/Hz dBc/Hz GHz GHz GHz dBm dB dBm
TFF11070HN* SOT616 27 - 448 3.3 100 -95 -131 6.84 7.00 7.16 -5 -10 -10
TFF11073HN* SOT616 28 - 468 3.3 100 -95 -131 7.16 7.33 7.49 -5 -10 -10
TFF11077HN* SOT616 29 - 490 3.3 100 -95 -131 7.49 7.67 7.84 -5 -10 -10
TFF11080HN* SOT616 31 - 513 3.3 100 -95 -131 7.84 8.02 8.21 -5 -10 -10
TFF11084HN* SOT616 32 - 537 3.3 100 -95 -131 8.21 8.40 8.59 -5 -10 -10
TFF11088HN* SOT616 34 - 562 3.3 100 -95 -131 8.59 8.79 8.99 -5 -10 -10
TFF11092HN* SOT616 35 - 588 3.3 100 -95 -131 8.99 9.20 9.41 -5 -10 -10
TFF11096HN* SOT616 37 - 616 3.3 100 -95 -131 9.41 9.63 9.85 -5 -10 -10
TFF11101HN* SOT616 38 - 644 3.3 100 -95 -131 9.85 10.07 10.31 -5 -10 -10
TFF11105HN* SOT616 40 - 674 3.3 100 -95 -131 10.31 10.54 10.79 -5 -10 -10
TFF11110HN* SOT616 42 - 706 3.3 100 -95 -131 10.79 11.03 11.29 -5 -10 -10
TFF11115HN* SOT616 44 - 738 3.3 100 -95 -131 11.29 11.55 11.81 -5 -10 -10
TFF11121HN* SOT616 46 - 773 3.3 100 -95 -131 11.81 12.09 12.36 -5 -10 -10
TFF11126HN* SOT616 48 - 809 3.3 100 -95 -131 12.36 12.65 12.94 -5 -10 -10
TFF11139HN* SOT616 53 - 886 3.3 100 -95 -131 13.54 13.85 14.17 -5 -10 -10
TFF11145HN* SOT616 55 - 927 3.3 100 -95 -131 14.17 14.50 14.83 -5 -10 -10
TFF11152HN* SOT616 58 - 970 3.3 100 -95 -131 14.83 15.18 15.52 -5 -10 -10
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Bold Red = New, highly recommended product
74 NXP Semiconductors RF Manual 14th edition
3.5 RF MOS transistors
3.5.1 JFETs
Why choose NXP Semiconductors’ JFETs
`Reliable volume supplier
`Short leadtimes
`Broad portfolio
N-channel junction field-effect transistors for switching
Type Package
VDS IG
CHARACTERISTICS
IDSS -Vgsoff RDSON Crs ton toff
(V) (mA) (mA) (V) (Ω) (pF) (ns) (ns)
max max min max min max max min max typ max typ max
BSR56 SOT23 40 50 50 - 4 10 25 - 5 - - - 25
BSR57 SOT23 40 50 20 100 2 6 40 - 5 - - - 50
BSR58 SOT23 40 50 8 80 0.8 4 60 - 5 - - - 100
PMBFJ108 SOT23 25 50 80 - 3 10 8 - 15 4 - 6 -
PMBFJ109 SOT23 25 50 40 - 2 6 12 - 15 4 - 6 -
PMBFJ110 SOT23 25 50 10 - 0.5 4 18 - 15 4 - 6
PMBFJ111 SOT23 40 50 20 - 3 10 30 - typ.3 13 - 35 -
PMBFJ112 SOT23 40 50 5 - 1 5 50 - typ.3 13 - 35 -
PMBFJ113 SOT23 40 50 2 - 0.5 3 100 - typ.3 13 - 35 -
J108 SOT54 25 50 80 - 3 10 8 - 15 4 - 6 -
J109 SOT54 25 50 40 - 2 6 12 - 15 4 - 6 -
J110 SOT54 25 50 10 - 0.5 4 18 - 15 4 - 6
J111 SOT54 40 50 20 - 3 10 30 - typ.3 13 - 35 -
J112 SOT54 40 50 5 - 1 5 50 - typ.3 13 - 35 -
J113 SOT54 40 50 2 - 0.5 3 100 - typ.3 13 - 35 -
PMBF4391 SOT23 40 50 50 150 4 10 30 - 3.5 - 15 - 20
PMBF4392 SOT23 40 50 25 75 2 5 60 - 3.5 - 15 - 35
PMBF4393 SOT23 40 50 5 30 0.5 3 100 - 3.5 - 15 - 50
P-channel junction field-effect transistors for switching
Type Package
VDS IG
CHARACTERISTICS
IDSS -Vgsoff RDSON Crs ton toff
(V) (mA) (mA) (V) (Ω) (pF) (ns) (ns)
max max min max min max max min max typ max typ max
PMBFJ174 SOT23 30 50 20 135 5 10 85 typ.4 7 - 15 -
PMBFJ175 SOT23 30 50 7 70 3 6 125 typ.4 15 - 30 -
PMBFJ176 SOT23 30 50 2 35 1 4 250 typ.4 35 - 35 -
PMBFJ177 SOT23 30 50 1.5 20 0.8 2.25 300 typ.4 45 - 45 -
J174 SOT54 30 50 20 135 5 10 85 typ.4 7 - 15 -
J175 SOT54 30 50 7 70 3 6 125 typ.4 15 - 30 -
J176 SOT54 30 50 2 35 1 4 250 typ.4 35 - 35 -
J177 SOT54 30 50 1.5 20 0.8 2.25 300 typ.4 45 - 45 -
NEW : JFET selection guide on www.nxp.com/rffets
Easy-to-use parametric filters help you to choose the right
junction field effect transistor for your design.
75NXP Semiconductors RF Manual 14th edition
N-channel junction field-effect transistors for general RF applications
Type Package
VDS IG
CHARACTERISTICS
IDSS Vgsoff |Yfs| Crs
(V) (mA) (mA) (V) (mS) (pF)
max max min max min max min max min max
DC, LF and HF amplifiers
BF245A SOT54 30 10 2 6.5 <8 3 6.5 Typ.=1.1 -
BF245B SOT54 30 10 6 15 <8 3 6.5 Typ.=1.1 -
BF245C SOT54 30 10 12 25 <8 3 6.5 Typ.=1.1 -
BF545A SOT23 30 10 2 6.5 0.4 7.5 3 6.5 0.8 -
BF545B SOT23 30 10 6 15 0.4 7.5 3 6.5 0.8 -
BF545C SOT23 30 10 12 25 0.4 7.5 3 6.5 0.8 -
BF556A SOT23 30 10 3 7 0.5 7.5 4.5 - 0.8 -
BF556B SOT23 30 10 6 13 0.5 7.5 4.5 - 0.8 -
BF556C SOT23 30 10 11 18 0.5 7.5 4.5 - 0.8 -
Pre-amplifiers for AM tuners in car radios
BF861A SOT23 25 10 2 6.5 0.2 1.0 12 20 2.1 2.7
BF861B SOT23 25 10 6 15 0.5 1.5 16 25 2.1 2.7
BF861C SOT23 25 10 12 25 0.8 2 20 30 2.1 2.7
BF862 SOT23 20 10 10 25 0.3 2 35 - typ=1.9 -
RF stages FM portables, car radios, main radios & mixer stages
BF510(1) SOT23 20 10 0.7 3 typ. 0.8 2.5 0.4 0.5
BF511(1) SOT23 20 10 2.5 7 typ. 1.5 4 0.4 0.5
BF512(1) SOT23 20 10 6 12 typ. 2.2 6 0.4 0.5
BF513(1) SOT23 20 10 10 18 typ. 3 7 0.4 0.5
Low-level general purpose amplifiers
BFR30 SOT23 25 5 4 10 <5 1 4 1.5 -
BFR31 SOT23 25 5 1 5 <2.5 1.5 4.5 1.5 -
General-purpose amplifiers
BFT46 SOT23 25 5 0.2 1.5 <1.2 >1 1.5 -
AM input stages UHF/VHF amplifiers
PMBFJ308 SOT23 25 50 12 60 1 6.5 >10 1.3 2.5
PMBFJ309 SOT23 25 50 12 30 1 4 >10 1.3 2.5
PMBFJ310 SOT23 25 50 24 60 2 6.5 >10 1.3 2.5
PMBFJ620 SOT363 25 50 24 60 2 6.5 10 1.3 2.5
Bold = Highly recommended product
(1) Asymmetrical
76 NXP Semiconductors RF Manual 14th edition
3.5.2 MOSFETs
Why choose NXP Semiconductors’ MOSFETs
`Reference designs for TV tuning
`Short leadtimes
`Broad portfolio
`Smallest packages
`2-in-1 FETs for tuner applications
`Reliable volume supply
`Best performance MOSFETs for TV tuning
N-channel, single MOSFETs for switching
Type Package
VDS CHARACTERISTICS
IDIDSS V(p)GS RDSON Crs ton toff |S21(on)|2|S21(off)|2MODE
(V) (mA) (mA) (V) (Ω) (pF) (ns) (ns) (dB) (dB)
max max min max min max max min max typ max typ max max min
BSS83 SOT143 10 50 - - 0.1(2) 2(1) 45 typ.0.6 - 1 - 5 - - enh.
Silicon RF Switches
BF1107 SOT23 3 10 - 100(3) - 7(4) 20 - - - - - - 2.5 30 depl.
BF11085) SOT143B 3 10 - 100(3) - 7(4) 20 - - - - - - 3 30 depl.
BF1108R5) SOT143R 3 10 - 100(3) - 7(4) 20 - - - - - - 3 30 depl.
BF1108W SOT343 3 10 - 100 - 7(4) 20 - - - - - - 3 30 depl
BF1108WR SOT343R 3 10 - 100 - 7(4) 20 - - - - - - 3 30 depl
BF1118 SOT143B 3 10 - 100 - 7(4) 22 - - - - - - 3 30 depl
BF1118R SOT143R 3 10 - 100 - 7(4) 22 - - - - - - 3 30 depl
BF1118W SOT343 3 10 - 100 - 7(4) 22 - - - - - - 3 30 depl
BF1118WR SOT343R 3 10 - 100 - 7(4) 22 - - - - - - 3 30 depl
Bold = Highly recommended product
Bold Red = New, highly recommended product
N-channel, dual-gate MOSFETs
Type Package
VDS ID
CHARACTERISTICS
IDSX V(th)gs |Yfs| Cis Cos F @ 800 MHz VHF UHF
(V) (mA) (mA) (V) (mS) (pF) (pF) (dB)
max max min max min max min max typ typ typ
With external bias
BF908 SOT143 12 40 3 27 - -2 36 50 3.1 1.7 1.5 X X
BF908R SOT143R 12 40 3 27 - -2 36 50 3.1 1.7 1.5 X X
BF908WR SOT343R 12 40 3 27 - -2 36 50 3.1 1.7 1.5 X X
BF991 SOT143 20 20 4 25 - -2.5 10 - 2.1 1.1 1 X -
BF992 SOT143 20 40 - - - -1.3 20 - 4 2 1.2(7) X -
BF994S SOT143 20 30 4 20 - -2.5 15 - 2.5 1 1(7) X -
BF996S SOT143 20 30 4 20 - -2.5 15 - 2.3 0.8 1.8 - X
BF998 SOT143 12 30 2 18 - -2.0 21 - 2.1 1.05 1 X X
BF998R SOT143R 12 30 2 18 - -2.0 21 - 2.1 1.05 1 X X
BF998WR SOT343R 12 30 2 18 - -2.5 22 - 2.1 1.05 1 X X
Fully internal bias
BF1105 SOT143 7 30 8 16 0.3 1.2(6) 25 - 2.2(9) 1.2(8) 1.7 X X
BF1105R SOT143R 7 30 8 16 0.3 1.2(6) 25 - 2.2(9) 1.2(8) 1.7 X X
BF1105WR SOT343R 7 30 8 16 0.3 1.2(6) 25 - 2.2(9) 1.2(8) 1.7 X X
BF1109 SOT143 11 30 8 16 0.3 1.2(6) 24 - 2.2(9) 1.3(8) 1.5 X X
BF1109R SOT143R 11 30 8 16 0.3 1.2(6) 24 - 2.2(9) 1.3(8) 1.5 X X
BF1109WR SOT343R 11 30 8 16 0.3 1.2(6) 24 - 2.2(9) 1.3(8) 1.5 X X
Partly internal bias
BF904A SOT143 7 30 8 13 0.3 1(6) 22 30 2.2 1.3 2 X X
BF904AR SOT143R 7 30 8 13 0.3 1(6) 22 30 2.2 1.3 2 X X
BF904AWR SOT343R 7 30 8 13 0.3 1(6) 22 30 2.2 1.3 2 X X
BF909A SOT143 7 40 12 20 0.3 1(6) 36 50 3.6 2.3 2 X X
BF909AR SOT143R 7 40 12 20 0.3 1(6) 36 50 3.6 2.3 2 X X
BF909AWR SOT343R 7 40 12 20 0.3 1(6) 36 50 3.6 2.3 2 X X
NEW : RF MOSFET selection guide on www.nxp.com/rffets Easy-to-use parametric
filters help you to choose the right RF MOSFET for your design.
(1) Asymmetrical
(6) VGS(th)
(2) VGS(th)
(7) @ 200 MHz
(3) ID
(8) COSS
(4) VSG
(9) Cig
(5) Depletion FET
plus diode in one
package
77NXP Semiconductors RF Manual 14th edition
N-channel, dual-gate MOSFETs
Type Package
VDS ID
CHARACTERISTICS
IDSX V(th)gs |Yfs| Cis Cos F @ 800 MHz VHF UHF
(V) (mA) (mA) (V) (mS) (pF) (pF) (dB)
max max min max min max min max typ typ typ
Partly internal bias
BF1100 SOT143 14 30 8 13 0.3 1.2(6) 24 33 2.2 1.4 2 X X
BF1100R SOT143R 14 30 8 13 0.3 1.2(6) 24 33 2.2 1.4 2 X X
BF1100WR SOT343R 14 30 8 13 0.3 1.2(6) 24 33 2.2 1.4 2 X X
BF1101 SOT143 7 30 8 16 0.3 1(6) 25 - 2.2 1.2(8) 1.7 X X
BF1101R SOT143R 7 30 8 16 0.3 1(6) 25 - 2.2 1.2(8) 1.7 X X
BF1101WR SOT343R 7 30 8 16 0.3 1(6) 25 - 2.2 1.2(8) 1.7 X X
BF1102(R)(10) SOT363 7 40 12 20 0.3 1.2(6) 36 - 2.8(9) 1.6(8) 2 X X
BF1201 SOT143 10 301) 11 19 0.3 1.2(6) 23 35 2.6 0.9 1.9 X X
BF1201R SOT143R 10 301) 11 19 0.3 1.2(6) 23 35 2.6 0.9 1.9 X X
BF1201WR SOT343R 10 301) 11 19 0.3 1.2(6) 23 35 2.6 0.9 1.9 X X
BF1202 SOT143 10 30 8 16 0.3 1.2(6) 25 40 1.7 0.85 1.1 X X
BF1202R SOT143R 10 30 8 16 0.3 1.2(6) 25 40 1.7 0.85 1.1 X X
BF1202WR SOT343R 10 30 8 16 0.3 1.2(6) 25 40 1.7 0.85 1.1 X X
BF1203(11) SOT363 10 30 11 19 0.3 1.2(6) 23 35 2.6 0.9 1.9 X -
10 30 8 16 0.3 1.2 25 40 1.7 0.85 1.1 - X
BF1204(10) SOT363 10 30 8 16 0.3 1.2(6) 25 40 1.7 0.85 1.1 X X
BF1205C(11)(12)(13) SOT363 6 30 14 24 0.3 1 26 41 2.2 0.9 1.4 X -
6 30 9 17 0.3 1 28 43 2 0.85 1.4 - X
BF1205(11)(12)(13) SOT363 10 30 8 16 0.3 1.0 26 40 1.8 0.75 1.2 X -
7 30 8 16 0.3 1.0 26 40 2.0 0.85 1.4 - X
BF1206(11) SOT363 6 30 14 23 0.3 1.0 33 48 2.4 1.1 1.6 X -
6 30 9 17 0.3 1.0 29 44 1.7 0.85 1.4 - X
BF1206F(11) SOT666 6 30 3 6.5 0.3 1.0 17 32 2.4 1.1 1.1 X -
6 30 3 6.5 0.3 1.0 17 32 1.7 0.85 1.0 - X
BF1207(11)(13)(14) SOT363 6 30 13 23 0.3 1.0 25 40 2.2 0.9 1.4 X -
6 30 9 19 0.3 1.0 26 41 1.8 0.8 1.4 - X
BF1208(11)(12)(13) SOT666 6 30 14 24 0.3 1 26 41 2.2 0.9 1.4 X -
6 30 9 17 0.3 1 28 43 2 0.85 1.4 - X
BF1208D(11)(12)(13) SOT666 6 30 14 24 0.3 1 26 41 2.1 0.8 1.1 X -
6 30 10 20 0.3 1 25 40 2.1 0.85 1.4 - X
BF1210(11)(12) SOT363 6 30 14 24 0.3 1 26 41 2.2 0.9 1.4 X -
6 30 9 17 0.3 1 28 43 2 0.85 1.4 - X
BF1211 SOT143 6 30 11 19 0.3 1.0 25 40 2.1 0.9 1.3 X -
BF1211R SOT143R 6 30 11 19 0.3 1.0 25 40 2.1 0.9 1.3 X -
BF1211WR SOT343 6 30 11 19 0.3 1.0 25 40 2.1 0.9 1.3 X -
BF1212 SOT143 6 30 8 16 0.3 1.0 28 43 1.7 0.9 1.1 - X
BF1212R SOT143R 6 30 8 16 0.3 1.0 28 43 1.7 0.9 1.1 - X
BF1212WR SOT343 6 30 8 16 0.3 1.0 28 43 1.7 0.9 1.1 - X
BF1214(10) SOT363 6 30 13 23 0.3 1.0 25 35 2.2 0.9 1.4 X X
BF1218 (11/12/13) SOT363 6 30 14 24 0.3 1 26 41 2.1 0.8 1.1 X -
6 30 10 20 0.3 1 25 40 2.1 0.85 1.4 - X
Bold = Highly recommended product
Bold Red = New, highly recommended product
(1) Asymmetrcal
(2) VGS(th) (9) Cig
(3) ID (10) Two equal dual gate MOSFETs in one package
(4) VSG (11) Two low noise gain amplifiers in one package
(5) Depletion FET plus diode in one package (12) Transistor A: fully internal bias, transistor B: partly internal bias
(7) @200 MHz (13) Internal switching function
(8) COSS (14) Transistor A: partly internal bias, transistor B: fully internal bias
N-channel, dual gate MOSFETs for Set-Top-Boxes
Type Package
VDS ID
CHARACTERISTICS
IDSX V(th)gs |Yfs| Cis COS
F @ 800
MHz
X-Mod @ 40 dB
gain reduction
(V) (mA) (mA) (V) (mS) (pF) (pF) (dB) (dB)
max max max min max typ typ typ typ typ
BF1215 (1)(2)(3) SOT363 6 30 19.5 0.3 1 27 2.5 0.8 1.9 107
6 30 23 0.3 1 27 2.5 0.8 1.9 107
BF1216(1) SOT363 6 30 19.5 0.3 1 27 2.5 0.8 1.9 107
6 30 23 0.3 1 27 2.5 0.8 1.9 107
BF1217 SOT343 6 30 23 0.3 1 27 2.5 0.8 1.9 107
(1) Two low noise gain amplifiers in one package
(2) Transistor A: fully internal bias, transistor B: partly internal bias
(3) Internal switching function
Bold Red = New, highly recommended product
78 NXP Semiconductors RF Manual 14th edition
3.6.1 CATV Reverse Hybrids
Frequency
range Type number Gain Slope FL RLIN/RLOUT CTB XMOD CSO @ Ch @ Vo NF @ fMAX Itot
(dB) (dB) (dBmV) (mA)
5 -75 MHz BGY68 29.2 - 30.8 -0.2 - 0.5 ± 0.2 20/20 -68 -60 - 4 50 3.5 135
5 -120 MHz BGY66B 24.5 - 25.5 -0.2 - 0.5 ± 0.2 20/20 -66 -54 - 14 48 5 135
5 -200 MHz BGY67 21.5 - 22.5 -0.2 - 0.5 ± 0.2 20/20 -67 -60 - 22 50 5.5 230
BGY67A 23.5 - 24.5 -0.2 - 0.5 ± 0.2 20/20 -67 -59 - 22 50 5.5 230
5-200 MHz BGR269 34.5 - 35.5 0 - 0.6 ± 0.4 20/20 -57 -50 -70 28 50 5.2 160
3.6.2 CATV Push-Pulls
Frequency
range Type number Gain Slope FL RLIN/RLOUT CTB XMOD CSO @ Ch @ Vo NF @ fMAX Itot
(dB) (dB) (dBmV) (mA)
40 - 550 MHz
OM7650 33.2 - 35.5 0.2 - 2 - 10/10 -45 - -57 77 44 8 340
BGY588C 33.2 - 35.5 0.2 - 1.7 ± 0.5 16/16 -57 - -62 77 44 8 345
BGY585A 17.7 - 18.7 0.5 - 2 ± 0.2 20/20 -59 -62 -59 77 44 8 240
BGY587 21.5 - 22.5 0.2 - 1.5 ± 0.2 20/20 -57 -58 -54 77 44 7 240
BGY587B 26.2 - 27.8 0.5 - 2.5 ± 0.4 20/20 -57 -60 -57 77 44 6.5 340
BGY588N 33.5 - 35.5 0.5 - 1.5 ± 0.4 20/20 -57 -59 -62 77 44 6 340
40 - 600 MHz BGY685A 17.7 - 18.7 0.5 - 2.2 ± 0.2 20/20 -55 -60 -56 85 44 8.5 240
BGY687 21 - 22 0.8 - 2.2 ± 0.2 20/20 -54 -54 -52 85 44 6.5 240
40 - 750 MHz
OM7670 33.2 - 35.2 1/4 - 10/8 -43 - -54 110 44 8 340
BGY785A 18 - 19 0 - 2 ± 0.3 20/20 -53 -56 -53 110 44 7 240
BGE788C 33.2 - 35.2 0.3 - 2.3 ± 0.6 16/16 -49 - -52 110 44 8 325
BGY787 21 - 22 0 - 1.5 ± 0.5 20/20 -53 -52 -53 110 44 6.5 240
BGE787B 28.5 - 29.5 0.2 - 2.2 ± 0.5 20/20 -50 -54 -56 110 44 7 320
BGE788 33.5 - 34.5 0.5 - 2.5 ± 0.5 20/20 -49 -51 -52 110 44 7 320
40 - 870 MHz
BGY883 14.5 - 15.5 0 - 2 ± 0.3 20/20 -61 -61 -61 49 44 8.5 235
BGE885 16.5 - 17.5 0.2 - 1.2 ± 0.5 14/14 - - - 129 59 8 240
BGX885N 16.5 - 17.5 0.2 - 1.4 ± 0.3 20/20 - - - 129 59 8 240
BGY885A 18 - 19 0 - 2 ± 0.3 20/20 -61 -61 -61 49 44 8 240
BGY887 21 - 22 0.2 - 2 ± 0.3 20/20 -55 -61 -57 129 40 6.5 235
CGY888C 34.5 - 36.5 0.5 - 2.5 ± 0.5 20/20 -68 - -66 112 44 4.0 280
BGY835C 33.5 - 34.5 0.5 - 2.5 ± 0.6 21/21 -60 -59 -55 49 44 7.0 340
BGY887B 28.5 - 29.5 0.5 - 2.5 ± 0.5 20/20 -60 -60 -60 49 44 6.5 340
BGY888 33.5 - 34.5 0.5 - 2.5 ± 0.5 20/20 -60 -59 -55 49 44 7 340
40 -1003 MHz BGY1085A 18 - 19 0 - 2 ± 0.3 20/20 -53 -54 -56 150 44 7.5 240
3.6 RF Modules
Why choose NXP Semiconductors’ RF Modules
`Excellent linearity, stability and reliability
`Rugged construction
`Extremely low noise
`High power gain
`Low total cost of ownership
CATV types for Chinese (C-types) and 1GHz GaAs HFET
line ups
New in our CATV Hybrid portfolio are two families of products.
The C types are specially designed for the Chinese market,
customized for two major governmental projects.
And the GaAs HFET 1 GHZ complete line up for high end
applications all around the world.
Both families will be extended in the following months to cover
all of the twospecific market segments.
C types (China)
`CATV push pulls, chapter 3.6.2: BGY588C, BGE788C,
CGY888C
`CATV power doublers, chapter 3.6.3: BGD712C
`CATV optical receivers, chapter 3.6.4: BGO807C
1GHz GaAs HFET very high end Hybrids
`CATV push pulls, chapter 3.6.2 : CGY1047, CGY1041,
CGY1043
`CATV power doublers, chapter 3.6.3: CGD1040Hi,
CGD1042Hi, CGD1044Hi, CGD1046Hi, CGD1042H,
CGD1044H
NEW : CATV module selection guide on www.nxp.com/catv
Easy-to-use parametric filters help you to choose the right
CATV module for your design.
79NXP Semiconductors RF Manual 14th edition
CATV Push-Pulls 1 GHz
Freq range Type Gain Slope fl RLIN /RLOUT CTB Xmod CSO @ Ch @ Vout NF Itot
40-1003 MHz CGY1041* 22 1.0 - 2.0 dB ±0.8 20/18 dB -62 dBc -58 dBc -64 dBc 79NTSC+75digital 44 dBmV flat 5.5 dB 250 mA
40-1003 MHz CGY1043* 24 1.0 - 2.0 dB ±0.8 20/18 dB -62 dBc -58 dBc -64 dBc 79NTSC+75digital 44 dBmV flat 5.5 dB 250 mA
40-1003 MHz CGY1047 28 1.0 - 2.0 dB ±0.5 20/18 dB -62 dBc -58 dBc -64 dBc 79NTSC+75digital 44 dBmV flat 4.5 dB 250 mA
40-1003 MHz CGY1049* 30 1.5 - 2.5 dB ±0.8 20/18 dB -62 dBc -58 dBc -64 dBc 79NTSC+75digital 44 dBmV flat 4.5 dB 250 mA
40-1003 MHz CGY1032* 33 1.0 - 2.0 dB ±0.8 20/18 dB -62 dBc -58 dBc -64 dBc 79NTSC+75digital 44 dBmV flat 4.5 dB 250 mA
3.6.3 CATV power doublers
Frequency
range Type number Gain Slope FL RLIN /RLOUT CTB XMOD CSO @ Ch @ Vo NF @ fMAX Itot
(dB) (dB) (dBmV) (mA)
40 - 550 MHz BGD502 18 - 19 0.2 - 2.2 ± 0.3 20/20 -65 -68 -62 77 44 8 435
40 -750 MHz
BGD702 18 - 19 0.2 - 2 ± 0.5 20/20 -58 -62 -58 110 44 8.5 435
BGD702N 18 - 19 0.2 - 2 ± 0.25 20/20 -58 -62 -58 110 44 8.5 435
BGD712 18.2 - 18.8 0.5 - 1.5 ± 0.35 23/23 -62 -63 -63 112 44 7 410
BGD712C 18.2 - 18.8 0.5 - 1.5 ± 0.4 17/17 -62 - -63 112 44 7 410
BGD704 19.5 - 20.5 0 - 2 ± 0.5 20/20 -57 -61 -56 110 44 8.5 435
BGD714 20 - 20.6 0.5 - 1.5 ± 0.35 23/23 -61 -62 -62 112 44 7 410
40 - 870 MHz
BGD885 16.5 - 17.5 0.2 - 1.6 ± 0.5 20/20 - - - 129 59 8 450
BGD802 18 - 19 0.2 - 2 ± 0.5 20/20 -54 -59 -56 129 44 9 410
BGD812 18.2 - 18.8 0.4 - 1.4 ± 0.5 23/23 -58 -62 -60 132 44 7.5 410
BGD804 19.5 - 20.5 0.2 - 2 ± 0.5 20/20 -53 -61 -54 129 44 7.5 410
BGD814 19.7 - 20.3 0.4 - 1.4 ± 0.5 22/25 -57.5 -62 -59 132 44 7.5 410
BGD816L 21.2 - 21.8 0.5 - 1.5 ± 0.5 22/25 -55 -58 -56 129 44 7.5 375
CGD942C 20.5 - 22.5 1 - 2 ± 0.3 18/18 -66 -58 -68 132 48 3.5 450
CGD944C 23 - 25 1 - 2 ± 0.3 18/18 -66 -58 -68 132 48 3.5 450
40 - 1003 MHz
CGD1040Hi 21 1.5 0.5 -20/-20 -65 -68 -68 79 channels 50 <6 470
CGD1042Hi 23 1.5 0.5 -20/-20 -65 -68 -68 79 channels 50 <6 470
CGD1044Hi 25 1.5 0.5 -20/-20 -65 -68 -68 79 channels 50 <6 470
CGD1046Hi* 25 0 - 2.0 1 20/20 -73 -74 -68 79NTSC+75^ 44 5.0 460
CGD1042H 23 0 - 1.5 ± 0.3 17.5/20 -70 -67 -68 79 + 75^59 5.0 450
CGD1044H 25 0 - 1 ± 0.3 17.5/20 -70 -67 -68 79 + 75^59 5.0 450
^ = digital channels
3.6.4 CATV optical receivers
Frequency
range Type number S Slope FLSL RLout IMD3 IMD2 @fm @Pi NF @ fMAX Conn. Itot
(V/W) (dB) (dB) (MHz) (mW) (mA)
Forward Path Receiver
40 - 870 MHz
BGO807 800 0 - 2 1 11 -71 -55 854.5 1 8.5 205
BGO807/FC0 750 0 - 2 1 11 -71 -55 854.5 1 8.5 FC 205
BGO807/SC0 750 0 - 2 1 11 -71 -55 854.5 1 8.5 SC 205
BGO807C 800 0 - 2 1 11 -71 -54 854.4 1 8.5 205
BGO807CE 800 0 - 2 1 11 -71 -53 854.4 1 8.5 205
BGO807C/FC0 750 0 - 2 1 11 -71 -55 854.5 1 8.5 FC 205
BGO807C/SC0 750 0 - 2 1 11 -71 -55 854.5 1 8.5 SC 205
BGO827 800 0 - 2 1 11 -73 -57 854.5 1 8.5 205
BGO827/FC0 750 0 - 2 1 11 -73 -57 854.5 1 8.5 FC 205
BGO827/SC0 750 0 - 2 1 11 -73 -57 854.5 1 8.5 SC 205
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Bold Red = New, highly recommended product
Bold = Highly recommended product
NOTES: This table is for reference only.
For full data please refer to the latest datasheet.
For availability please check the NXP Sales office.
Description
Frequency range: minimum and maximum frequency in MHz at which data are characterized @Ch/@Vo. The number of channels
and the output voltage at which CTB, XMOD, CSO, IMD2 and IMD3 are characterized @fm. Measurement frequency is fm. Noise
Figure is in dB or Noise in pA/Sqrt(Hz). FLSL is Flatness straight line. S is Minimum responsivity of optical receivers.
80 NXP Semiconductors RF Manual 14th edition
3.7.1 Base Station transistors
http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/basestations/index.html#preview
Device naming conventions RF power base stations transistors
Why choose NXP Semiconductors‘ RF power transistors for base stations:
`Leading technology (generation 6 and 7 of LDMOS)
`Highest (system) efficiency
`Best ruggedness
`Advanced Doherty amplifier designs
`Industry’s first 3.8 GHz Doherty
`Industry’s first fully integrated Doherty amplifier
NXP offers complete line-ups of RF power transistors operation from 800 MHz right up to 3.8 GHz for base stations,
covering all cellular technologies (MC-GSM/EDGE, TDMA, (TD-S)CDMA, W-CDMA/UMTS) and WiMAX infrastructures.
3.7.1.1 0.7 - 1.0 GHz line-up
Function Type Package frange PL(AV) ηDGp@VDS
MHz W % dB V
driver BLF6G21-10G SOT538A 10 - 2200 0.7 15 18.5 28
driver BLM6G10-30 SOT834-1 700 - 1000 2 11.5 29 28
driver BLM6G10-30G SOT822-1 700 - 1000 2 11.5 29 28
driver BLF6G10(S)-45 SOT608 700 - 1000 1 7.8 22.5 28
driver BLF6G10L(S)-40BRN SOT1112A3/B3 728 - 960 2.5 15 15 23
final BLF6G10(LS)-135RN SOT502 700 - 1000 26.5 28 21 28
final BLF6G10(LS)-160RN SOT502 700 - 1000 32 27 22.5 32
final BLF6G10(LS)-200RN SOT502 688 - 1000 40 28.5 20 28
final BLF6G10L(S)-260PRN SOT539A3/B3 728 - 960 40 27 27 22
final BLF6G07L(S)-260PBM SOT1110A3/B3 728 - 810 60 31 21 28
B L F 6 G 22 L S -45 P R B N G
gullwing-shaped leads
specialty
option: current sense lead
enhanced ruggedness
push-pull device
P1dB power
option: earless package
option: low thermal resistivity
operating frequency (in 100MHz; maximum)
G: standard LDMOS
LDMOS technology generation
F: LDMOS transistor in ceramic package
C: LDMOS transistor in air cavity plastic (ACP) package
D: fully integrated Doherty amplifier
M: MMIC module
L: high frequency power transistor
B: semiconductor die made of Si
B L F 6 G 22 L S -45 P R B N G
gullwing-shaped leads
specialty
option: current sense lead
enhanced ruggedness
push-pull device
P1dB power
option: earless package
option: low thermal resistivity
operating frequency (in 100MHz; maximum)
G: standard LDMOS
LDMOS technology generation
F: LDMOS transistor in ceramic package
C: LDMOS transistor in air cavity plastic (ACP) package
D: fully integrated Doherty amplifier
M: MMIC module
L: high frequency power transistor
B: semiconductor die made of Si
3.7 RF power transistors
NEW : RF power transistor selection guide on www.nxp.com/rfpower
Easy-to-use parametric filters help you to choose the right RF
power transistor for your design.
81NXP Semiconductors RF Manual 14th edition
3.7.1.2 1.4 - 1.7 GHz line-up
Function Type Package frange PL(AV) ηDGp@VDS
MHz W % dB V
driver BLF6G15L(S)-40BRN SOT1112A3/B3 1475-1511 2,5 13 22 28
final BLF6G15L(S)-250PBRN SOT1110A3/B3 1475-1511 60 32.5 18 28
3.7.1.3 1.8 - 2.0 GHz line-up
Function Type Package frange PL(AV) ηDGp@VDS
MHz W % dB V
driver BLF6G21-10G SOT538A 10 - 2200 0.7 15 18.5 28
driver BLF6G20-40 SOT608A 1800 - 2000 2.5 15 18.8 28
driver BLF6G20(S)-45 SOT608B 1800 - 2000 2.5 14 19.2 28
final BLF6G20LS-75 SOT502 1800 - 2000 29.5 37.5 19 28
1800 - 2000 63 52 19 28
final BLF6G20(LS)-110 SOT502 1800 - 2000 25 32 19 28
final BLF6G20LS-140 SOT502B 1800 - 2000 35.5 30 16.5 28
final BLF6G20-180PN SOT539A 1800 - 2000 50 29.5 18 32
final BLF6G20(LS)-180RN SOT502B 1800 - 2000 40 27 17.2 30
final BLF6G20-230PRN SOT539A 1800 - 2000 65 32 17.5 28
final BLF7G20L(S)-140P SOT1121B3 1805 - 1880 20 31 17.5 28
final BLF7G20L(S)-90P SOT1121A3/B3 1805 - 1880 84 56 19 28
final BLF7G20L(S)-300P SOT539A3/B3 1805 - 1880 85 30 17 28
final BLF7G20L(S)-200 SOT502A3/B3 1805 - 1880 50 30 17 28
final BLF7G20L(S)-250P SOT539A3/B3 1805 - 1880 70 30 17 28
3.7.1.4 2.0 - 2.2 GHz line-up
Function Type Package frange PL(AV) ηDGp@VDS
MHz W % dB V
driver BLF6G21-10G SOT538A 10 - 2200 0.7 15 18.5 28
driver BLM6G22-30 SOT834-1 2100 - 2200 2 9 29.5 28
driver BLM6G22-30G SOT882-1 2100 - 2200 2 9 29.5 28
driver BLF6G22(S)-45 SOT608 2000 - 2200 2.5 13 18.5 28
driver BLF6G22L(S)-40BN SOT1112A3/B3 2110 - 2170 2.5 16 19 28
final BLF6G22LS-75 SOT502B 2000 - 2200 17 30.5 18.7 28
final BLF6G22LS-100 SOT502B 2000 - 2200 25 29 18.5 28
final BLF6G22L(S)-130 SOT502 2000 - 2200 30 28.5 17 28
final BLF7G22LS-130 SOT502B 2000 - 2200 30 32 18.5 28
final BLF6G22-180PN SOT539A 2000 - 2200 50 27.5 17.5 32
final BLF6G22(LS)-180RN SOT502 2000 - 2200 40 25 16 30
final BLF7G22L(S)-250PB SOT1110A3/B3 2110 - 2171 70 >17 30 28
integrated Doherty BLD6G21L(S)-50 SOT1130 2010 - 2025 8 42 13.5 28
integrated Doherty BLD6G22L(S)-50 SOT1130 2110 - 2170 8 38 13.3 28
3.7.1.5 2.3- 2.7 GHz line-up
Function Type Package frange PL(AV) ηDGp@VDS
MHz W % dB V
driver BLF6G27-10(G) SOT975 2500 - 2700 2 20 19 28
driver BLF6G27(S)-45 SOT608 2500 - 2700 7 24 18 28
driver BLF6G27(LS)-75 SOT502 2500 - 2700 9 23 17 28
driver BLF7G27L(S)-75P SOT1121A3/B3 2300 - 2400 10 26 17 28
driver BLF7G27L(S)-50BN SOT1112A3/B3 2500 - 2700 3 15 17 28
final BLF6G27(LS)-135 SOT502 2500 - 2700 20 22.5 16 32
final BLF7G27L(S)-100 SOT502A3/B3 2500 - 2700 14 24 17.5 28
final BLF7G24L(S)-100(G) SOT 502 A 2300 - 2400 14 24 18 28
final BLF7G27L(S)-140 SOT502A3/B3 2500 - 2700 20 22 17 28
final BLF7G27L(S)-200P SOT539 2500 - 2700 20 25 16.5 28
82 NXP Semiconductors RF Manual 14th edition
3.7.1.6 3.5 - 3.8 GHZ line-up
Function Type Package frange PL(AV) ηDGp@VDS
MHz W % dB V
driver BLF6G38-10(G) SOT975 3400 – 3600 2 20 14 28
driver BLF6G38(S)-25 SOT608 3400 – 3800 4.5 24 15 28
driver BLF6G38(LS)-50 SOT502 3400 – 3800 9 23 14 28
final BLF6G38(LS)-100 SOT502 3400 – 3600 18.5 21.5 13 28
Freq band (MHz) PPEAK
(dBm)
POUT-AVG
(dBm)
VDS
(V)
Gain
(dB)
Drain Eff.
(%) Type Main transistor Peak transistor
728-821 MHz
790-821 54.5 47.5 28 20 50 SYM 1/2 BLF7G10-300P 1/2 BLF7G10-300P
790-821 55.5 47 28 19 42 SYM 1/2 BLF6G10-260PRN 1/2 BLF6G10-260PRN
790-821 57.2 49.5 32 19 42 SYM BLF6G10LS-200RN BLF6G10LS-200RN
728-768 58 50 32 19 47 SYM BLF6G10LS-200RN BLF6G10LS-200RN
869-960 MHz
869-894 52 44 28 20 48 SYM BLF6G10S-45 BLF6G10S-45
869-894 52.7 44.5 28 15 50 3-WAY BLF6G10S-45 2x BLF6G10S-45
869-894 53 45 28 tbd tbd SYM 1/2 BLF7G10LS-160P 1/2 BLF7G10LS-160P
920-960 53 45 25 tbd tbd SYM 1/2 BLF7G10LS-160P 1/2 BLF7G10LS-160P
920-960 56.2 48 28 18.5 40 SYM BLF6G10-135RN BLF6G10-135RN
869-894 58 50 32 20.5 46 SYM BLF6G10-200RN BLF6G10-200RN
925-960 58.3 50 32 21 39 SYM / MMPP 1/2 BLF6G10-260PRN 1/2 BLF6G10-260PRN
925-960 58.9 50 32 22 44 SYM / MMPP 1/2 BLF6G10-260PRN 1/2 BLF6G10-260PRN
869-894 58 tbd 28 tbd tbd ASYM BLF6G10-200RN BLF7G10-300P
1476-1511 MHz
1476-1511 58 tbd 28 tbd tbd ASYM BLF6G15-250PB BLF6G15-250PB
1476-1511 58.1 49.6 28 16 42 ASYM BLF7G15LS-200 BLF7G15LS-300P
1805-1880 MHz (DCS)
1805-1880 52 44 27 14.5 42 SYM 1/2 BLC6G20-130PG 1/2 BLC6G20-130PG
1805-1880 52.5 44.5 28 16 44 SYM 1/2 BLF7G20LS-160P 1/2 BLF7G20LS-160P
1805-1880 55 47 32 16 38 SYM 1/2 BLF6G20-230PRN 1/2 BLF6G20-230PRN
1805-1880 55 47 28 15 40 SYM BLF6G18-140 BLF6G18-140
1805-1880 55.5 47 28 16 41 SYM 1/2 BLF7G20-250P 1/2 BLF7G20-250P
1805-1880 57.5 49.5 30 16 42 SYM BLF7G20LS-200 BLF7G20LS-200
1805-1880 57.9 50 32 15.5 37 SYM / MMPP BLF6G20-230PRN BLF6G20-230PRN
1805-1880 58.2 50 28 16 42 SYM / MPPM BLF7G20LS-250P BLF7G20LS-250P
1930-1990 MHz (PCS)
1930-1990 53 45 28 16.5 40 SYM BLF6G20-75 BLF6G20-75
1930-1990 55.2 46.4 28 16 39 SYM 1/2 BLF7G20LS-250P 1/2 BLF7G20LS-250P
1930-1990 56 48 31 15.3 38 SYM BLF6G20-140 BLF6G20-140
1930-1990 56 49 31 17 41 SYM 2x BLF6G20-75 2x BLF6G20-75
1930-1990 57.5 49.5 28 tbd tbd SYM BLF7G20LS-200 BLF7G20LS-200
1930-1990 58 50 32 15.5 37 SYM BLF6G20-230PRN BLF6G20-230PRN
1930-1990 58.2 50 28 16 40 SYM BLF7G20LS-250P BLF7G20LS-250P
1880-2025 MHz (TD-SCDMA)
2010-2025 47 39 28 14.4 41 SYM BLD6G21-50 BLF6G21-50
1880-2025 50 42 28 17 46 SYM 1/2 BLF7G20-90P 1/2 BLF7G20-90P
2010-2025 50 42 28 17.2 47.2 SYM 1/2 BLF7G20-90P 1/2 BLF7G20-90P
1880 - 1920 52.5 44.5 28 16 44 SYM 1/2 BLF7G20LS-160P 1/2 BLF7G20LS-160P
2110-2170 MHz (UMTS / LTE)
2110-2170 47 39 28 13 38 SYM BLD6G22-50 BLF6G22-50
2110-2170 54.7 46.5 28 16.5 43 SYM BLF6G22-100 BLF6G22-100
2110-2170 54.9 47 28 17 43 SYM BLF7G22-130 BLF7G22-130
2110-2170 55 47 28 15.5 38 SYM BLF6G22-130 BLF6G22-130
2110-2170 55.5 46.4 28 15 43 ASYM BLF7G22LS-130 BLF7G22LS-200
2110-2170 56 48 28 15 48 3-WAY BLF7G22-130 7G22-130/7G22-130
2110-2170 56.5 48.5 28 16.2 41 SYM BLF7G22-200 BLF7G22-200
2110-2170 57 49 32 14.5 41 ASYM BLF6G22-100 BLF6G22-180PN
2110-2170 58 50 32 15 40 SYM BLF6G22-180PN BLF6G22-180PN
2110-2170 58.5 51 tbd tbd tbd SYM BLF7G22LS-250P BLF7G22LS-250P
2110-2170 59 51 tbd tbd tbd 3-WAY BLF7G22LS-160 BLF7G22LS-160
2110-2170 55 47 28 17 43 SYM 1/2 BLF7G22LS-250P 1/2 BLF7G22LS-250P
2300-2400 MHz (WiBRO / LTE)
2300-2400 49.5 42 28 14.5 43 SYM 1/2 BLF7G27-75P 1/2 BLF7G27-75P
2300-2400 52 44.5 28 tbd tbd ASYM BLF7G27S-50 BLF7G27LS-100
2300-2400 52.5 45 28 tbd tbd SYM 1/2 BLF7G27LS-150P 1/2 BLF7G27LS-150P
2500-2700 MHz (WiMAX / LTE)
2570-2620 49.5 42 28 15 43 SYM 1/2 BLF7G27-75P 1/2 BLF7G27-75P
2500-2700 50 42 28 15 37.5 SYM BLF6G27-45 BLF6G27-45
2500-2600 52 44 28 14 40 ASYM BLF6G27-45 2x BLF6G27-45
2600-2700 52 44 28 14 40 ASYM BLF6G27-45 2x BLF6G27-45
2600-2700 52 44 28 14 40 ASYM BLF6G27-45 BLC6G27-100
2500-2700 52.5 44.5 28 14 38 SYM 1/2 BLF6G27-150P 1/2 BLF7G27-150P
2300-2400 52.5 45 28 tbd tbd SYM 1/2 BLF7G27LS-150P 1/2 BLF7G27LS-150P
2500-2700 55 47 28 tbd tbd ASYM BLF7G27LS-100 BLF7G27LS-140
2500-2700 56.5 tbd tbd tbd tbd ASYM BLF7G27L-140B BLF7G27L-250PB
3300-3800 MHz (WiMAX)
3400-3600 49.5 41.5 28 tbd tbd SYM 1/2 BLF7G38LS-75P 1/2 BLF7G38LS-75P
3400-3600 51 43 28 11.5 32 SYM BLF6G38-50 BLF6G38-50
3400-3600 52.5 44.5 28 tbd tbd SYM BLF7G38-75 BLF7G38-75
3.7.1.7 Power LDMOS Doherty designs
83NXP Semiconductors RF Manual 14th edition
3.7.2 Broadcast / ISM (industrial, scientific, medical) RF power transistors
http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/broadcast_ism/index.html#preview
Why choose NXP Semiconductors’ RF power transistors for broadcast / ISM applications:
`Highest power
`Best ruggedness
`Best broadband performance
`Best-in-class design support
`Very low thermal resistance design for unrivalled reliability
NXP’s leading LDMOS technologies together with advanced package concepts enable best in class performing
power amplifiers. We offer industry’s highest power and best ruggedness for all broadcast technologies.
Our portfolio includes transistors for Ultra High Frequency (UHF), Very High Frequency (VHF) and
High Frequency (HF) applications as well as covering ISM frequency bands.
3.7.2.1 0-1000 MHz (UHF/VHF/HF/ISM) LDMOS Line up
Function Type Package frange PL(AV) ηDGp@VDS Mode of operation
MHz W % dB V
driver
BLF871 SOT467C 0 - 1000 100 47 21 40 2-TONE
0 - 1000 24 33 22 40 DVB-T
driver BLF871S SOT467B 0 - 1000 100 47 21 40 2-TONE
0 - 1000 24 33 22 40 DVB-T
driver BLF881 SOT467C 0 - 1000 140 49 21 50 2-TONE
0 - 1000 33 34 21 50 DVB-T
driver BLF881S SOT467C 0 - 1000 140 49 21 50 2-TONE
0 - 1000 33 34 21 50 DVB-T
final BLF645 SOT540A 0 - 1400 100 45 18 32 2-TONE
0 - 1400 100 56 18 32 CW
driver BLF571 SOT467C 0 - 1000 20 70 27.5 50 CW
final BLF573 SOT502A3 0 - 1000 300 70 27.2 50 CW
final BLF573S SOT502B 0 - 1000 300 70 27.2 50 CW
final BLF574 SOT539A 0 - 1000 500 70 26.5 50 CW
final BLF578 SOT539A 0 - 1000 1200 71 24 50 PULSED RF
0 - 1000 1000 75 26 50 CW
3.7.2.2 470-876 MHz (UHF) LDMOS line up
Function Type Package frange PL(AV) ηDGp@VDS Mode of operation
MHz W % dB V
driver BLF871 SOT467C 0 - 1000 100 47 21 40 2-TONE
0 - 1000 24 33 22 40 DVB-T
driver BLF871S SOT467B 0 - 1000 100 47 21 40 2-TONE
0 - 1000 24 33 22 40 DVB-T
final BLF878 SOT979A 470 - 860 300 32 21 42 CW
470 - 860 75 46 21 42 DVB-T
driver BLF881S SOT467C 0 - 1000 120 48 21 50 2-TONE
0 - 1000 30 31 21 50 DVB-T
driver BLF881 SOT467C 0 - 1000 120 48 21 50 2-TONE
0 - 1000 30 31 21 50 DVB-T
final BLF888 SOT979A 470 - 860 250 46 19 50 2-TONE
470 - 860 110 31 19 50 DVB-T
final BLF888AS SOT539B 470 - 860 250 46 19 50 2-TONE
470 - 860 110 31 19 50 DVB-T
final BLF888A SOT539B 470 - 860 255 47 19 50 2-TONE
470 - 860 115 32 19 50 DVB-T
3.7.2.3 28-225 Mhz General purpose VDMOS
Function Type Package frange PL(AV) ηDGp@VDS Mode of operation
MHz W % dB V
final BLF177 SOT121B 28-108 150 >35 20 50 CW class AB
final BLF278 SOT262A1 108-225 250-300 50-80 14-20 50 CW class AB
84 NXP Semiconductors RF Manual 14th edition
3.7.3 Microwave LDMOS RF power transistors
http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/microwave_ldmos/index.html#preview
Device naming conventions RF power microwave transistors
Why choose NXP Semiconductors’ microwave RF power transistors
`High gain
`High efficiency
`Highest reliability
`Improved pulse droop and insertion phase
`Improved ruggedness - overdrive without risk to +5 dB
`Reduces component count and helps simplify L- and S-band radar design
`Uses non-toxic, ROHS compliant packages
3.7.3.1 Avionics LDMOS transistors
Function Type Package frange PLηDGp@VDS Mode of operation
MHz W % dB V
driver BLL6H0514-25 SOT467C 500 - 1400 25 (min) 50 19 50 PULSED RF; class AB
final BLA6H0912-500 SOT634A 960 - 1215 450 50 17 50 PULSED RF; class AB
final BLA6H1011-600 SOT539A 1030 - 1090 600 52 19 50 PULSED RF; class AB
final BLA6G1011-200R SOT502A2 1030 - 1090 200 65 20 28 PULSED RF; class AB
3.7.3.2 L-band LDMOS transistors
Function Type Package frange PLηDGp@VDS Mode of operation
MHz W % dB V
driver BLL6H0514-25 SOT467C 500 - 1400 25 (min) 50 19 50 PULSED RF; class AB
final BLL6H1214-500 SOT539A 1200 - 1400 500 (min) 50 17 50 PULSED RF; class AB
final BLL6H1214L(S)-250 SOT502 1200 - 1400 250 55 17 50 Pulsed RF
final BLL6HL(S)0514-130 SOT1135 1200 - 1400 130 50 18 50 Pulsed RF
3.7.3.3 S-band LDMOS transistors
Function Type Package frange PLηDGp@VDS Mode of operation
MHz W % dB V
driver BLS6G2731-6G SOT975C 2700 - 3100 6 33 15 32 PULSED RF; class AB
driver BLS6G3135-20 SOT608A 3100 - 3500 20 45 15.5 32 PULSED RF; class AB
driver BLS6G3135S-20 SOT608B 3100 - 3500 20 45 15.5 32 PULSED RF; class AB
final BLS6G2731-120 SOT502A 2700 - 3100 120 48 13.5 32 PULSED RF; class AB
final BLS6G2731S-120 SOT502B 2700 - 3100 120 48 13.5 32 PULSED RF; class AB
final BLS6G2933S-130 SOT922-1 2900 - 3300 130 47 12.5 32 PULSED RF; class AB
final BLS6G3135-120 SOT502A 3100 - 3500 120 43 11 32 PULSED RF; class AB
final BLS6G3135S-120 SOT502B 3100 - 3500 120 43 11 32 PULSED RF; class AB
final BLS7G2933P-200 pallet 2900 - 3300 200 45 11 32 PULSED RF; class AB
final BLS7G2731P-200 pallet 2700 - 3100 200 45 11 32 PULSED RF; class AB
final BLS6G2731S-130 SOT922 2700 - 3100 130 49 13 32 Pulsed RF
final BLS7G2729-300P SOT539A 2700-2900 300 50 15 32 Pulsed RF
final BLS7G2729S-300P SOT539B 2700-2900 300 50 15 32 Pulsed RF
B L S 6 G 2731 S -120 G
option: gullwing shaped leads
P1dB power
S: earless package
P: pallet
frequency band (in 100MHz; here: 2700-3100)
G: standard LDMOS (<=28V)
H: high voltage LDMOS (50V)
LDMOS technology generation
A: avionics frequency band operation
L: L-Band frequency operation
S: S-Band frequency operation
L: high frequency power transistor
B: semiconductor die made of Si
85NXP Semiconductors RF Manual 14th edition
3.8.1 High Speed ADCs
Type Description
Supply
Voltage
(V)
Power
Dissipation
(mW)
SFDR
(dBc)
SNR
(dBFS) Digital Interface Package
ADC1613D series
Dual 16-bit ADC up to 65/80/105/125Msps with serial interface
1.8 / 3.3 445 93 73.2 JESD204A HVQFN56 8x8
ADC1610S series
Single 16-bit ADC up to 65/80/105/125Msps
1.8 / 3.3 350 93 73.2 LVCMOS and LVDS/DRR HVQFN40 6x6
ADC1415S series
Single 14-bit ADC up to 65/80/105/125Msps with input buffer
1.8 / 3.3/5 550 91 73.2 LVCMOS and LVDS/DRR HVQFN40 6x6
ADC1413D series *
Dual 14-bit ADC up to 65/80/105/125Msps with serial interface
1.8 / 3.3 445 91 73.2 JESD204A HVQFN56 8x8
ADC1412D series
Dual 14-bit ADC up to 65/80/105/125Msps
1.8 / 3.3 350 91 73.2 LVCMOS and LVDS/DRR HVQFN64 9x9
ADC1410S series
Single 14-bit ADC up to 65/80/105/125Msps
1.8 / 3.3 350 91 73.2 LVCMOS and LVDS/DRR HVQFN40 6x6
ADC1215S series
Single 12-bit ADC up to 65/80/105/125Msps with input buffer
1.8 / 3.3/5 550 91 70.7 LVCMOS and LVDS/DRR HVQFN40 6x6
ADC1213D series
Dual 12-bit ADC up to 65/80/105/125Msps with serial interface
1.8 / 3.3 445 91 70.7 JESD204A HVQFN56 8x8
ADC1212D series *
Dual 12-bit ADC up to 65/80/105/125Msps
1.8 / 3.3 350 91 70.7 LVCMOS and LVDS/DRR HVQFN64 9x9
ADC1210S series
Single 12-bit ADC up to 65/80/105/125Msps
1.8 / 3.3 350 91 70.7 LVCMOS and LVDS/DRR HVQFN40 6x6
ADC1207S080
Single 12-bit ADC 80 Msps
5 840 90 71 parallel LVCMOS HTQFN48 7x7
ADC1206S series
Single 12-bit ADC 40/50/70 Msps
3.3 / 5.0 550 72 64 parallel CMOS and TTL QFP44
ADC1115S125
Single 11-bit ADC up to 125Msps with input buffer
1.8 / 3.3/5 790 90 66.7 LVCMOS and LVDS/DRR HVQFN40 6x6
ADC1113D125
Dual 11-bit ADC up to 125Msps with serial interface
1.8 / 3.3 635 90 66.7 JESD204A HVQFN56 8x8
ADC1015S series
Single 10-bit ADC up to 65/80/105/125Msps with input buffer
1.8 / 3.3/5 550 91 61.7 LVCMOS and LVDS/DRR HVQFN40 6x6
ADC1010S series
Single 10-bit ADC up to 125Msps
1.8 / 3.3 350 91 61.7 LVCMOS and LVDS/DRR HVQFN40 6x6
ADC1006S series
Single 10-bit ADC 50/70 Msps
3.3 / 5.0 550 71 59 parallel CMOS and TTL QFP44
3.8.2 High Speed DACs
Type Description
Supply
Voltage
(V)
Power
Dissipation
(mW)
SFDR
(dBc) Interpolation Package
DAC1408D series * Dual 14-bit DAC up to 650/750 Msps 1.8 / 3.3 850 77 2x, 4x, 8x HVQFN64 9x9
DAC1405D series Dual 14-bit DAC up to 650/750 Msps 1.8 / 3.3 550 77 2x, 4x, 8x HTQFP100 14x14
DAC1403D160 Dual 14-bit DAC 160 Msps 3.3 210 80 2x HTQFP80 12x12
DAC1401D125 Dual 14-bit DAC 125 Msps 3.3 105 88 - LQFP48
DAC1208D series Dual 12-bit DAC up to 650/750 Msps 1.8 / 3.3 850 77 2x, 4x, 8x HVQFN64 9x9
DAC1205D series Dual 12-bit DAC up to 650/750 Msps 1.8 / 3.3 550 80 2x, 4x, 8x HTQFP100 14x14
DAC1203D160 Dual 12-bit DAC 160 Msps 3.3 210 77 2x HTQFP80 12x12
DAC1201D125 Dual 12-bit DAC 125 Msps 3.3 105 65 - LQFP48
DAC1008D series Dual 10-bit DAC up to 650/750 Msps 1.8 / 3.3 850 77 2x, 4x, 8x HVQFN64 9x9
DAC1005D series Dual 10-bit DAC up to 650/750 Msps 1.8 / 3.3 550 77 2x, 4x, 8x HTQFP100 14x14
DAC1003D160 Dual 10-bit DAC 160 Msps 3.3 210 80 2x HTQFP80 12x12
DAC1001D125 Dual 10-bit DAC 125 Msps 3.3 105 65 - LQFP48
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Bold Red = New, highly recommended product
3.8 High Speed Data Converters
Analog performance, power optimization and ease of use are the perennial industry challenges
for high-speed data converters used in communications. For many years NXP has been quietly
developing data converters for captive applications. It is now opening it's high-speed data
converters to the entire market, offering a broad portfolio of highly competitive ADCs and DACs
featuring three different data interfaces, including the industry’s first implementation of the JEDEC
JESD204A serial data interface.
86 NXP Semiconductors RF Manual 14th edition
4. Design support
This chapter will make it easier to find and get hold of design-in information and materials,
with web links or references to the NXP representative / authorized distributor.
4.1 S-Parameters
S-Parameters help you to simulate the behaviour of our devices
to your specific adjustments for e.g. voltage, current.
Wideband transistors, FETs & MMICs
First, click on the type number, which takes you directly
to the corresponding product information page on the
NXP Semiconductors internet.
Second, scroll down on this product information page
to find the S-Parameters.
Wideband transistors
BF67 BFG540W BFR93AW
BFG135 BFG541 BFS17
BFG198 BFG590 BFS17A
BFG21W BFG591 BFS17W
BFG25A/X BFG93A BFS25A
BFG31 BFG94 BFS505
BFG35 BFG97 BFS520
BFG310/XR BFM505 BFS540
BFG310W/XR BFM520 BFT25
BFG325/XR BFQ149 BFT25A
BFG325W/XR BFQ18A BFT92
BFG403W BFQ19 BFT92W
BFG410W BFQ67 BFT93
BFG424F BFQ67W BFT93W
BFG424W BFR106 BFU725F/N1
BFG425W BFR505 BRF505T
BFG480W BFR520 PBR941
BFG505 BFR540 PBR951
BFG520 BFR92A PRF947
BFG520W BFR92AW PRF949
BFG540 BFR93A PRF957
FETs
BF1211 BF1212 BF511
BF1211R BF1212R BF513
BF1211WR BF1212WR BF862
MMICs
BGA2001 BGM1012 BGA6489
BGA2003 BGM1013 BGA6589
BGA2711 BGM1014 BGA2800
BGA2748 BGM2011 BGA2801
BGA2771 BGA2715 BGA2815
BGA2776 BGA2716 BGA2816
BGA2709 BGA2717 BGA2850
BGU7003 BGA2011 BGA2865
BGA2712 BGA2012 BGA2866
BGM1011 BGA6289
4.2 Simulation models
4.2.1 Spice models
Spice models help you to create the optimal performance
and to understand which external components have a certain
influence on that performance.
Wideband transistors, FETs & Varicaps diodes
First, click on the type number which takes you directly
to the corresponding product information page on the
NXP Semiconductors internet.
Second, scroll down on this product information page
to find the Spice models.
Wideband transistors
BFG10 BFG505 BFG92A/X BFR93AW
BFG10/X BFG505/X BFG93A BFS17
BFG10W/X BFG505W/X BFG94 BFS17A
BFG135 BFG520 BFG97 BFS17W
BFG198 BFG520/X BFM505 BFS25A
BFG21W BFG520/XR BFM520 BFS505
BFG25A/X BFG520W BFQ149 BFS520
BFG25AW/X BFG520W/X BFQ18A BFS540
BFG31 BFG540 BFQ19 BFT25A
BFG310/XR BFG540/X BFQ540 BFT92
BFG310W/XR BFG540/XR BFQ67 BFT92W
BFG325/XR BFG540W BFQ67W BFT93
BFG325W/XR BFG540W/X BFR106 BFT93W
BFG35 BFG540W/XR BFR505 PBR941
BFG403W BFG541 BFR505T PBR951
BFG410W BFG590 BFR520 PRF947
BFG424F BFG590/X BFR540 PRF949
BFG424W BFG591 BFR92A PRF957
BFG425W BFG67 BFR92AW
BFG480W BFG67/X BFR93A
FETs
BF862 BF908 BF909 BF998
BF904
Varicap diodes
BB145B BB156 BB201 BB208-02
BB149 BB179 BB202
BB149A BB179B BB207
Streamline your RF design with leading RF EDA software
Design kits of the NXP high performance RF small signal products.
NXP offers it’s RF small signal portfolio in leading RF Electronic Design Automation (EDA) software of: Ansoft Designer RF,
AWR Microwave Office and Agilent Advanced Design System (ADS), including installation manuals, on the NXP web:
www.nxp.com/models. To predict the behavior of a design by performing simulations, RF EDA software enables design
engineers to reduce the number of design cycles, lower the risks and make better RF component choice for RF applications.
87NXP Semiconductors RF Manual 14th edition
4.2.2 RF Power device simulation models
For easy design-in, NXP provides fully physics based, electro-
thermal models for the RF power transistors. These models are
available for Advanced Design System (ADS)® from Agilent and
for Microwave Office (MWO)® from Applied Wave Research
(AWR). Newly developed models per product are based on the
best in class RFLDMOS model, developed by NXP Research,
a recognized leader in physics based models. This concept
yields most reliable simulation results over a wide range of
electrical conditions. The standard models fully support DC,
AC, s-parameter (small signal), harmonic balance (large signal)
and time domain simulations. NXP RF power models allow
designers to assess the performance of complex PAsystems at
an early stage of the development process.
The available models come with all necessary libraries and
documentation, and can be downloaded at NXP’s website.
Product Type ADS
Model
MWO
Model Product Type ADS
Model
MWO
Model
BLF369 Y N BLF6G27(S)-45 Y Y
BLF3G21-6 Y N BLF6G27(LS)-135 Y N
BLF571 Y Y BLF6G27(LS)-75 Y N
BLF573(S) Y Y BLF6G38-10(G) Y N
BLF574 Y Y BLF6G38(LS)-100 Y N
BLF578 Y Y BLF6G38(LS)-50 Y Y
BLF645 Y N BLF6G38(S)-25 Y Y
BLF6G10(LS)-135RN N Y BLF7G22L(S)-130 Y N
BLF6G10L(S)-260PRN Y N BLF871(S) Y N
BLF6G10(S)-45 Y Y BLF878 Y N
BLF6G20-45 Y Y BLF881(S) Y N
BLF6G20(LS)-180RN Y N BLF888 Y N
BLF6G20(S)-230PRN Y N BLL6H0514-25 Y N
BLF6G20S-45 Y Y BLL6H1214-500 Y N
BLF6G21-10G Y N BLM6G22-30 Y N
BLF6G22(LS)-180RN Y N BLS6G3135(S)-120 Y N
BLF6G27-10(G) Y N BLS6G3135(S)-20 Y N
4.3 Application notes
http://www.nxp.com/products/all_appnotes/
For the application notes we refer you to chapter 1 of this
manual. For each application, we have given the recommended
application notes which are available on the internet (with
interactive link) or via your local NXP representative or authorized
distributor (look at the last chapter: Web Links and Contacts).
4.4 Demo boards
BGA2001 demo board
4.4.1 IC, MMIC and SiGe:C transistor demo boards
RF Small Signal demo boards are available (although limited)
via your local NXP representative or authorized distributor
(look at the last chapter: Web Links and Contacts).
RF small signal demo boards
BFU725F/N1 BGA2776 BGM1011 TFF11096HN
BGA2001 BGA2800 BGM1012 TFF11101HN
BGA2003 BGA2801 BGM1013 TFF11105HN
BGA2011 BGA2815 BGM1014 TFF11110HN
BGA2012 BGA2816 BGU7003 TFF11115HN
BGA2031 BGA2850 BGU7005 TFF11121HN
BGA2709 BGA2865 TFF1003HN TFF11126HN
BGA2711 BGA2866 TFF11070HN TFF11132HN
BGA2712 BGA6289 TFF11073HN TFF11139HN
BGA2714 BGA6489 TFF11077HN TFF11145HN
BGA2715 BGA6589 TFF11080HN TFF11152HN
BGA2716 BGA6589 TFF11084HN
BGA2748 BGA7024 TFF11088HN
BGA2771 BGA7124 TFF11092HN
BGU7005 demo board BGA7124 demo board
4.4.2 RF power transistor demo boards
Demo boards are available (although limited) via your local NXP
representative (see the last chapter: Web Links and Contacts).
88 NXP Semiconductors RF Manual 14th edition
4.4.3 High Speed Converter demo boards
High Speed Converter demo boards are available (although
limited) via your local NXP representative or authorized
distributor (look at the last chapter; Web Links and Contacts).
ADC Demo Boards DAC Demo Boards
Type Type
ADC1006S series DAC1001D125
ADC1010S series DAC1003D160
ADC1015S series DAC1005D series
ADC1113D125 DAC1201D125
ADC1115S125 DAC1203D160
ADC1206S series DAC1401D125
ADC1207S080 DAC1403D160
ADC1210S series DAC1405D series
ADC1212D series DAC1205D series
ADC1213D series DAC1408D series
ADC1215S series DAC1208D series
ADC1410S series DAC1008D series
ADC1412D series
ADC1413D series
Different versions available
via NXP sales representative
ADC1415S series
ADC1610S series
ADC1613D series
4.5 Samples of products in development
For development samples, please ask your local NXP
representative or authorized distributor (see last chapter:
Web Links and Contacts) to order the latest versions at the
RF development team.
4.6 Samples of released products
For all released and most non-released products for RF power,
samples are available in the sample warehouse. Look on the
home page of the NXP web site for the link to the online sample
store: www.nxp.com
4.7 Datasheets
For all released and most non-released products for RF power,
datasheets are available on the NXP Semiconductors internet.
Simply ‘clicking’ on a product type (in this manual chapter 1 or 2)
takes you to the corresponding product information page on the
NXP Semiconductors website.
4.8 Design-in support
If you need special design-in support from our design-in
engineers, please ask your local NXP representative or
authorized distributor (see last chapter: Web Links and Contacts),
to pass on your request to the RF development teams.
4.9 NEW: interactive selection guides
For all RF product groups, you can find easy-to-use parametric
filters to help you to chose the right device for your design, e.g.
www.nxp.com/mmics, click on selection guide.
89NXP Semiconductors RF Manual 14th edition
5. Cross-references & replacements
NXP cross-references:
http://www.nxp.com/search/
NXP end-of-life:
http://www.nxp.com/products/eol/
5.1 Cross-references: Manufacturer types versus NXP types
In alphabetical order of manufacturer type
Abbreviations:
BS diode
CATV PD
CATV PPA
CATV PPA/HG
CATV RA
FET
Standard
MMIC
Varicap
WB trs 1-4
WB trs 5-7
Band Switch Diode
CATV Power Doubler
CATV Push Pull Amplifier
CATV Push Pull Amplifier High Gain
CATV Reverse Amplifier
Field Effect Transistor
Standard
Monolithic Microwave Integrated Circuit
Varicap Diode
Wideband Transistor 1-4 generation
Wideband Transistor 5-7 generation
Manufacturer type Manufacturer NXP type Product family
10500 Microsemi BLA6H0912-500 Microwave
10502 Microsemi BLA6H0912-500 Microwave
0910-150M Microsemi BLF871 Broadcast
0910-300M Microsemi BLF878 Broadcast
0910-60M Microsemi BLF878 Broadcast
0912-45 Microsemi BLL6H0514-25 Microwave
1011LD200 Microsemi BLA6G1011-200R Microwave
1011LD300 Microsemi BLA6G1011-200R Microwave
1015MP Microsemi BLL6H0514-25 Microwave
1035MP Microsemi BLL6H0514-25 Microwave
1214-30 Microsemi BLL6H0514-25 Microwave
1214-32L Microsemi BLL6H0514-26 Microwave
1SS314 Toshiba BA591 BS diode
1SS356 Rohm BA591 BS diode
1SS381 Toshiba BA277 BS diode
1SS390 Rohm BA891 BS diode
1SV172 Toshiba BAP50-04 PIN diode
1SV214 Toshiba BB149 Varicap
1SV214 Toshiba BB149A Varicap
1SV215 Toshiba BB153 Varicap
1SV228 Toshiba BB201 Varicap
1SV231 Toshiba BB152 Varicap
1SV232 Toshiba BB148 Varicap
1SV233 Sanyo BAP70-03 PIN diode
1SV234 Sanyo BAP64-04 PIN diode
1SV239 Toshiba BB145B Varicap
1SV241 Sanyo BAP64-02 PIN diode
1SV246 Sanyo BAP64-04W PIN diode
1SV247 Sanyo BAP70-02 PIN diode
1SV248 Sanyo BAP50-02 PIN diode
1SV249 Sanyo BAP50-04W PIN diode
1SV250 Sanyo BAP50-03 PIN diode
1SV251 Sanyo BAP50-04 PIN diode
1SV252 Toshiba BAP50-04W PIN diode
Manufacturer type Manufacturer NXP type Product family
1SV254 Toshiba BB179 Varicap
1SV263 Sanyo BAP50-02 PIN diode
1SV264 Sanyo BAP50-04W PIN diode
1SV266 Sanyo BAP50-03 PIN diode
1SV267 Sanyo BAP50-04 PIN diode
1SV269 Toshiba BB148 Varicap
1SV270 Toshiba BB156 Varicap
1SV271 Toshiba BAP50-03 PIN diode
1SV278 Toshiba BB179 Varicap
1SV279 Toshiba BB179 Varicap
1SV282 Toshiba BB178 Varicap
1SV282 Toshiba BB187 Varicap
1SV283 Toshiba BB178 Varicap
1SV283 Toshiba BB187 Varicap
1SV284 Toshiba BB156 Varicap
1SV288 Toshiba BB152 Varicap
1SV290 Toshiba BB182 Varicap
1SV294 Sanyo BAP70-03 PIN diode
1SV305 Toshiba BB202 Varicap
1SV307 Toshiba BAP51-03 PIN diode
1SV308 Toshiba BAP51-02 PIN diode
1SV322 Toshiba BB202LX Varicap
1T362 PEC BB149 Varicap
1T362A PEC BB149A Varicap
1T363A PEC BB153 Varicap
1T368A PEC BB148 Varicap
1T369 PEC BB152 Varicap
1T379 PEC BB131 Varicap
1T397 PEC BB152 Varicap
1T399 PEC BB148 Varicap
1T402 PEC BB179B Varicap
1T403 PEC BB178 Varicap
1T404A PEC BB187 Varicap
1T405A PEC BB187 Varicap
90 NXP Semiconductors RF Manual 14th edition
Manufacturer type Manufacturer NXP type Product family
1T406 PEC BB182 Varicap
1T408 PEC BB187 Varicap
2729-125 Microsemi BLS6G2731-120 Microwave
2729-170 Microsemi BLS6G2731-120 Microwave
2731-100M Microsemi BLS6G2731-120 Microwave
2931-150 Microsemi BLS6G2731-120 Microwave
2F1G20DS RFHIC CGD1042H CATV PD
2F1G20P RFHIC CGY1041 CATV PP
2F1G22DS RFHIC CGD1042H CATV PD
2F1G23P RFHIC CGY1043 CATV PP
2F1G24DS RFHIC CGD1044H CATV PD
2F722DS RFHIC BGD816L CATV PD
2F8718P RFHIC BGY885A CATV PP
2F8719DS RFHIC BGD812 CATV PD
2F8720DS RFHIC BGD814 CATV PD
2F8723P RFHIC BGY887 CATV PP
2F8734P RFHIC CGY888C CATV PP
2N3330 Standard J176 FET
2N3331 Standard J176 FET
2N4220 Standard BF245A FET
2N4856 Standard BSR56 FET
2N4857 Standard BSR57 FET
2N4858 Standard BSR58 FET
2N5114 Standard J174 FET
2N5115 Standard J175 FET
2N5116 Standard J175 FET
2N5432 Standard J108 FET
2N5433 Standard J108 FET
2N5434 Standard J109 FET
2N5457 Standard BF245A FET
2N5458 Standard BF245A FET
2N5459 Standard BF245B FET
2N5653 Standard J112 FET
2N5654 Standard J111 FET
2SC4094 NEC BFG520/XR WB trs 1-4
2SC4095 NEC BFG520/XR WB trs 1-4
2SC4182 NEC BFS17W WB trs 1-4
2SC4184 NEC BFS17W WB trs 1-4
2SC4185 NEC BFS17W WB trs 1-4
2SC4186 NEC BFR92AW WB trs 1-4
2SC4226 NEC PRF957 WB trs 1-4
2SC4227 NEC BFQ67W WB trs 1-4
2SC4228 NEC BFS505 WB trs 1-4
2SC4247 Toshiba BFR92AW WB trs 1-4
2SC4248 Toshiba BFR92AW WB trs 1-4
2SC4315 Toshiba BFG520/XR WB trs 1-4
2SC4320 Toshiba BFG520/XR WB trs 1-4
2SC4321 Toshiba BFQ67W WB trs 1-4
2SC4325 Toshiba BFS505 WB trs 1-4
2SC4394 Toshiba PRF957 WB trs 1-4
2SC4536 NEC BFQ19 WB trs 1-4
2SC4537 Renesas BFR93AW WB trs 1-4
2SC4592 Renesas BFG520/XR WB trs 1-4
2SC4593 Renesas BFS520 WB trs 1-4
2SC4703 NEC BFQ19 WB trs 1-4
2SC4784 Renesas BFS505 WB trs 1-4
2SC4807 Renesas BFQ18A WB trs 1-4
2SC4842 Toshiba BFG540W/XR WB trs 1-4
2SC4899 Renesas BFS505 WB trs 1-4
2SC4900 Renesas BFG520/XR WB trs 1-4
2SC4901 Renesas BFS520 WB trs 1-4
2SC4988 Renesas BFQ540 WB trs 1-4
2SC5011 NEC BFG540W/XR WB trs 1-4
2SC5012 NEC BFG540W/XR WB trs 1-4
2SC5065 Toshiba PRF957 WB trs 1-4
2SC5085 Toshiba PRF957 WB trs 1-4
2SC5087 Toshiba BFG520/XR WB trs 1-4
2SC5088 Toshiba BFG540W/XR WB trs 1-4
2SC5090 Toshiba BFS520 WB trs 1-4
2SC5092 Toshiba BFG520/XR WB trs 1-4
2SC5095 Toshiba BFS505 WB trs 1-4
2SC5107 Toshiba BFS505 WB trs 1-4
2SC5463 Toshiba BFQ67W WB trs 1-4
2SC5593 Renesas BFG410W WB trs 5-7
2SC5594 Renesas BFG425W WB trs 5-7
2SC5623 Renesas BFG410W WB trs 5-7
Manufacturer type Manufacturer NXP type Product family
2SC5624 Renesas BFG425W WB trs 5-7
2SC5631 Renesas BFQ540 WB trs 1-4
2SC6023 Sanyo BFG424W WB trs 5-7
2SJ105GR Standard J177 FET
2SK163-K Renesas J113 FET
2SK163-L Renesas J113 FET
2SK163-M Renesas J113 FET
2SK163-N Renesas J113 FET
2SK210BL Renesas PMBFJ309 FET
2SK370BL Renesas J109 FET
2SK370GR Renesas J109 FET
2SK370V Renesas J109 FET
2SK381 Renesas J113 FET
2SK43 Renesas J113 FET
2SK435 Renesas J113 FET
2SK508 Renesas PMBFJ308 FET
3SK290 Renesas BF998WR FET
BA592 Infineon BA591 BS diode
BA595 Infineon BAP51-03 PIN diode
BA595 Infineon BAP70-03 PIN diode
BA597 Infineon BAP70-03 PIN diode
BA885 Infineon BAP70-03 PIN diode
BA892 Infineon BA891 BS diode
BA892-02V Infineon BA277 PIN diode
BA892-02V Infineon BA891 PIN diode
BA892V-02V-GS08 Vishay BA891 PIN diode
BA895 Infineon BAP70-02 PIN diode
BAR14-1 Infineon BAP70-03 PIN diode
BAR15-1 Infineon BAP70-03 PIN diode
BAR16-1 Infineon BAP70-03 PIN diode
BAR17 Infineon BAP50-03 PIN diode
BAR50-02L Infineon BAP50LX PIN diode
BAR50-02V Infineon BAP50-02 PIN diode
BAR50-02V Infineon BAP50-03 PIN diode
BAR50-02V Infineon BAP50-05 PIN diode
BAR50-03W Infineon BAP70-02 PIN diode
BAR60 Infineon BAP50-03 PIN diode
BAR61 Infineon BAP50-03 PIN diode
BAR63 Infineon BAP63-03 PIN diode
BAR63-02L Infineon BAP63-02 PIN diode
BAR63-02L Infineon BAP63LX PIN diode
BAR63-02V Infineon BAP63-02 PIN diode
BAR63-02W Infineon BAP63-02 PIN diode
BAR63-03W Infineon BAP63-03 PIN diode
BAR63-05 Infineon BAP63-05W PIN diode
BAR63-05W Infineon BAP63-05W PIN diode
BAR63V-02V-GS08 Vishay BAP63-02 PIN diode
BAR63V-05W-GS08 Vishay BAP63-05W PIN diode
BAR64-02LRH Infineon BAP64LX PIN diode
BAR64-02V Infineon BAP64-02 PIN diode
BAR64-02W Infineon BAP64-02 PIN diode
BAR64-03W Infineon BAP64-03 PIN diode
BAR64-04 Infineon BAP64-04 PIN diode
BAR64-04W Infineon BAP64-04W PIN diode
BAR64-05 Infineon BAP64-05 PIN diode
BAR64-05W Infineon BAP64-05W PIN diode
BAR64-06 Infineon BAP64-06 PIN diode
BAR64-06W Infineon BAP64-06W PIN diode
BAR64V-02V-GS08 Vishay BAP64-02 PIN diode
BAR64V-04-GS08 Vishay BAP64-04 PIN diode
BAR64V-05-GS08 Vishay BAP64-05 PIN diode
BAR64V-06-GS08 Vishay BAP64-06 PIN diode
BAR64V-06W-GS08 Vishay BAP64-06W PIN diode
BAR65-02L Infineon BAP65LX PIN diode
BAR65-02V Infineon BAP65-02 PIN diode
BAR65-02W Infineon BAP65-02 PIN diode
BAR65-03W Infineon BAP65-03 PIN diode
BAR65V-02V-GS08 Vishay BAP65-02 PIN diode
BAR66 Infineon BAP1321-04 PIN diode
BAR67-02W Infineon BAP1321-02 PIN diode
BAR67-03W Infineon BAP1321-03 PIN diode
BAT18-04 Infineon BAT18 PIN diode
BB304C Renesas BF1201WR FET
BB304M Renesas BF1201R FET
BB305C Renesas BF1201WR FET
BB305M Renesas BF1201R FET
91NXP Semiconductors RF Manual 14th edition
Manufacturer type Manufacturer NXP type Product family
BB403M Renesas BF909R FET
BB501C Renesas BF1202WR FET
BB501M Renesas BF1202R FET
BB502C Renesas BF1202WR FET
BB502M Renesas BF1202R FET
BB503C Renesas BF1202WR FET
BB503M Renesas BF1202R FET
BB535 Infineon BB149 Varicap
BB545 Infineon BB149A Varicap
BB555 Infineon BB179B Varicap
BB565 Infineon BB179 Varicap
BB601M Renesas BF1202 FET
BB639 Infineon BB148 Varicap
BB639 Infineon BB153 Varicap
BB640 Infineon BB152 Varicap
BB641 Infineon BB152 Varicap
BB659 Infineon BB178 Varicap
BB664 Infineon BB178 Varicap
BB664 Infineon BB187 Varicap
BB669 Infineon BB152 Varicap
BB814 Infineon BB201 Varicap
BB831 Infineon BB131 Varicap
BB833 Infineon BB131 Varicap
BB835 Infineon BB131 Varicap
BBY58-02V Infineon BB202 Varicap
BBY65 Infineon BB202 Varicap
BF1005S Infineon BF1105 FET
BF1009S Infineon BF1109 FET
BF1009SW Infineon BF1109WR FET
BF2030 Infineon BF1101 FET
BF2030R Infineon BF1101R FET
BF2030W Infineon BF1101WR FET
BF244A Standard BF245A FET
BF244B Standard BF245B FET
BF244C Standard BF245C FET
BF247A Standard J108 FET
BF247B Standard J108 FET
BF247C Standard J108 FET
BF256A Standard BF245A FET
BF256B Standard BF245B FET
BF256C Standard BF245C FET
BF770A Infineon BFR93A WB trs 1-4
BF771 Infineon PBR951 WB trs 1-4
BF771W Infineon BFS540 WB trs 1-4
BF772 Infineon BFG540 WB trs 1-4
BF775 Infineon BFR92A WB trs 1-4
BF775A Infineon BFR92A WB trs 1-4
BF775W Infineon BFR92AW WB trs 1-4
BF851A Standard BF861A FET
BF851B Standard BF861B FET
BF851C Standard BF861C FET
BF994S Vishay BF994S FET
BF996S Vishay BF996S FET
BF998 Infineon BF998 FET
BF998 Vishay BF998 FET
BF998-GS08 Vishay BF998 FET
BF998R Vishay BF998R FET
BF998R-GS08 Vishay BF998R FET
BF998RW Vishay BF998WR FET
BF998W Infineon BF998WR FET
BFG135A Infineon BFG135 WB trs 1-4
BFG193 Infineon BFG198 WB trs 1-4
BFG194 Infineon BFG31 WB trs 1-4
BFG196 Infineon BFG541 WB trs 1-4
BFG19S Infineon BFG97 WB trs 1-4
BFG235 Infineon BFG135 WB trs 1-4
BFP180 Infineon BFG505/X WB trs 1-4
BFP181 Infineon BFG67/X WB trs 1-4
BFP181T-GS08 Vishay BFG67/X WB trs 1-4
BFP182 Infineon BFG67/X WB trs 1-4
BFP183 Infineon BFG520/X WB trs 1-4
BFP183R Infineon BFG520/XR WB trs 1-4
BFP183T-GS08 Vishay BFG520/X WB trs 1-4
BFP183TW-GS08 Vishay BFG520W/X WB trs 1-4
BFP193 Infineon BFG540/X WB trs 1-4
BFP193W Infineon BFG540W/XR WB trs 1-4
Manufacturer type Manufacturer NXP type Product family
BFP196T-GS08 Vishay BFG540/X WB trs 1-4
BFP196TR-GS08 Vishay BFG540/XR WB trs 1-4
BFP196TRW-GS08 Vishay BFG540W/XR WB trs 1-4
BFP196TW-GS08 Vishay BFG540W/X WB trs 1-4
BFP196W Infineon BFG540W/XR WB trs 1-4
BFP280 Infineon BFG505/X WB trs 1-4
BFP405 Infineon BFG410W WB trs 5-7
BFP420 Infineon BFG425W WB trs 5-7
BFP450 Infineon BFG480W WB trs 5-7
BFP67-GS08 Vishay BFG67/X WB trs 1-4
BFP67R-GS08 Vishay BFG67/X WB trs 1-4
BFP740 Infineon BFU725F WB trs 5-7
BFP740F Infineon BFU725F WB trs 5-7
BFP81 Infineon BFG92A/X WB trs 1-4
BFP92A-GS08 Vishay BFG92A/X WB trs 1-4
BFP93A Infineon BFG93A/X WB trs 1-4
BFP93A-GS08 Vishay BFG93A/X WB trs 1-4
BFQ193 Infineon BFQ540 WB trs 1-4
BFQ19S Infineon BFQ19 WB trs 1-4
BFQ67-GS08 Vishay BFQ67W WB trs 1-4
BFR106 Infineon BFR106 WB trs 1-4
BFR180 Infineon BFR505 WB trs 1-4
BFR180W Infineon BFS505 WB trs 1-4
BFR181 Infineon BFR520 WB trs 1-4
BFR181T-GS08 Vishay BFR520 WB trs 1-4
BFR181TW-GS08 Vishay BFS520 WB trs 1-4
BFR181W Infineon BFS520 WB trs 1-4
BFR182 Infineon PBR941 WB trs 1-4
BFR182W Infineon PRF947 WB trs 1-4
BFR183 Infineon PBR951 WB trs 1-4
BFR183T-GS08 Vishay PBR951 WB trs 1-4
BFR183TW-GS08 Vishay PRF957 WB trs 1-4
BFR183W Infineon PRF957 WB trs 1-4
BFR193 Infineon PBR951 WB trs 1-4
BFR193TW-GS08 Vishay PRF957 WB trs 1-4
BFR193W Infineon PRF957 WB trs 1-4
BFR196T-GS08 Vishay BFR540 WB trs 1-4
BFR196TW-GS08 Vishay BFS540 WB trs 1-4
BFR35AP Infineon BFR92A WB trs 1-4
BFR92AL Freescale BFR92A WB trs 1-4
BFR92AW-GS08 Vishay BFR92AW WB trs 1-4
BFR92P Infineon BFR92A WB trs 1-4
BFR92W Infineon BFR92AW WB trs 1-4
BFR93A Infineon BFR93A WB trs 1-4
BFR93AL Freescale BFR93A WB trs 1-4
BFR93AW Infineon BFR93AW WB trs 1-4
BFR93AW-GS08 Vishay BFR93AW WB trs 1-4
BFR93-GS08 Vishay BFR93A WB trs 1-4
BFS17-GS08 Vishay BFS17 WB trs 1-4
BFS17-GS08 Vishay BFS17A WB trs 1-4
BFS17L Freescale BFS17 WB trs 1-4
BFS17P Infineon BFS17A WB trs 1-4
BFS17W Infineon BFS17W WB trs 1-4
BFS17W-GS08 Vishay BFS17W WB trs 1-4
BFS481 Infineon BFM505 WB trs 1-4
BFS483 Infineon BFM520 WB trs 1-4
BFT92 Infineon BFT92 WB trs 1-4
BFT93 Infineon BFT93 WB trs 1-4
BIC701C Renesas BF1105WR FET
BIC701M Renesas BF1105R FET
BIC702C Renesas BF1105WR FET
BIC702M Renesas BF1105R FET
BIC801M Renesas BF1105 FET
BSR111 Standard PMBFJ111 FET
BSR112 Standard PMBFJ112 FET
BSR113 Standard PMBFJ113 FET
BSR174 Standard PMBFJ174 FET
BSR175 Standard PMBFJ175 FET
BSR176 Standard PMBFJ176 FET
BSR177 Standard PMBFJ177 FET
CA901 Standard BGX885N CATV PPA
CA901A Standard BGX885N CATV PPA
CA922 Standard BGD885 CATV PD
CA922A Standard BGD885 CATV PD
CMY91 Infineon BGA2022 MMIC
CMY91 Infineon BGA2022 WB trs 1-4
92 NXP Semiconductors RF Manual 14th edition
Manufacturer type Manufacturer NXP type Product family
CXE1089Z RFMD BGA6489 MMIC
CXE1089Z RFMD BGA6589 MMIC
D5540185 Standard BGD502 CATV PD
D7540185 Standard BGD702 CATV PD
D7540200 Standard BGD704 CATV PD
D8640185 Standard BGD802 CATV PD
DME500 Microsemi BLAH0912-500 Microwave
EC2C03C Sanyo BB145B Varicap
F2046 POLYFET BLF542 Broadcast
F2048 POLYFET BLF543 Broadcast
F2247 POLYFET BLF522 Broadcast
FSD273TA Skyworks BB148 Varicap
FSD273TA Skyworks BB178 Varicap
HBFP0405 Agilent BFG410W WB trs 5-7
HBFP0420 Agilent BFG425W WB trs 5-7
HBFP0450 Agilent BFG480W WB trs 5-7
HSC277 Renesas BA277 BS diode
HSMP3800 Agilent BAP70-03 PIN diode
HSMP3802 Agilent BAP50-04 PIN diode
HSMP3804 Agilent BAP50-05 PIN diode
HSMP3810 Agilent BAP50-03 PIN diode
HSMP3814 Agilent BAP50-05 PIN diode
HSMP381B Agilent BAP50-03 PIN diode
HSMP381C Agilent BAP50-05 PIN diode
HSMP381F Agilent BAP64-05W PIN diode
HSMP3820 Agilent BAP1321-03 PIN diode
HSMP3822 Agilent BAP1321-04 PIN diode
HSMP3830 Agilent BAP64-03 PIN diode
HSMP3832 Agilent BAP64-04 PIN diode
HSMP3833 Agilent BAP64-06 PIN diode
HSMP3834 Agilent BAP64-05 PIN diode
HSMP3860 Agilent BAP50-03 PIN diode
HSMP3862 Agilent BAP50-04 PIN diode
HSMP3864 Agilent BAP50-05 PIN diode
HSMP386B Agilent BAP50-02 PIN diode
HSMP386E Agilent BAP50-04W PIN diode
HSMP386L Agilent BAP50-05W PIN diode
HSMP3880 Agilent BAP51-03 PIN diode
HSMP3890 Agilent BAP51-03 PIN diode
HSMP3892 Agilent BAP64-04 PIN diode
HSMP3894 Agilent BAP64-05 PIN diode
HSMP3895 Agilent BAP51-02 PIN diode
HSMP389B Agilent BAP51-02 PIN diode
HSMP389C Agilent BAP64-04 PIN diode
HSMP389F Agilent BAP51-05W PIN diode
HVB14S Renesas BAP50-04W PIN diode
HVC131 Renesas BAP65-02 PIN diode
HVC132 Renesas BAP51-02 PIN diode
HVC200A Renesas BB178 Varicap
HVC200A Renesas BB187 Varicap
HVC202A Renesas BB179 Varicap
HVC202B Renesas BB179B Varicap
HVC300A Renesas BB182 Varicap
HVC300B Renesas BB182 Varicap
HVC306A Renesas BB187 Varicap
HVC306B Renesas BB187 Varicap
HVC355B Renesas BB145B Varicap
HVC359 Renesas BB202 Varicap
HVC363A Renesas BB178 Varicap
HVC376B Renesas BB198 Varicap
HVC376B Renesas BB202 Varicap
HVD132 Renesas BAP51-02 PIN diode
HVU131 Renesas BAP65-03 PIN diode
HVU132 Renesas BAP51-03 PIN diode
HVU202(A) Renesas BB149 Varicap
HVU202(A) Renesas BB149A Varicap
HVU300A Renesas BB152 Varicap
HVU307 Renesas BB148 Varicap
HVU315 Renesas BB148 Varicap
HVU316 Renesas BB131 Varicap
HVU363A Renesas BB148 Varicap
HVU363A Renesas BB153 Varicap
HVU363B Renesas BB148 Varicap
IB0810M100 Integra BLF871 Broadcast
IB0912L30 Integra BLA6H0514-25 Microwave
IB0912L70 Integra BLA6H0514-25 Microwave
Manufacturer type Manufacturer NXP type Product family
IB0912M210 Integra BLA6H0514-25 Microwave
IB0912M500 Integra BLA6H0912-500 Microwave
IB0912M600 Integra BLA6H0912-500 Microwave
IB1011L15 Integra BLA6H0514-25 Microwave
IB1011L220 Integra BLA6G1011-200R Microwave
IB1011L40 Integra BLA6H0514-25 Microwave
IB1011L470 Integra BLA6H0912-500 Microwave
IB1011M140 Integra BLA6G1011-200R Microwave
IB1011M190 Integra BLA6G1011-200R Microwave
IB1011M250 Integra BLA6G1011-200R Microwave
IB1011S190 Integra BLA6G1011-200R Microwave
IB1011S250 Integra BLA6G1011-200R Microwave
IB1012S10 Integra BLA6H0514-25 Microwave
IB1012S20 Integra BLA6H0514-25 Microwave
IB2729M5 Integra BLS6G2731-6G Microwave
IB2729M90 Integra BLS6G2731-120 Microwave
IB2731M110 Integra BLS6G2731-120 Microwave
IB2731MH110 Integra BLS6G2731-120 Microwave
IB2931MH155 Integra BLS6G2731-120 Microwave
IB3134M100 Integra BLS6G3135S-120 Microwave
IB3135MH100 Integra BLS6G3135S-120 Microwave
IBP1214M700 Integra BLL6H1214-500 Microwave
IBP1214M700 Integra BLL6H1214-500 Microwave
IBP3135M150 Integra BLS6G3135S-120 Microwave
IDM175CW300 Integra BLF278 Broadcast
IDM500CW150 Integra BLF881 Broadcast
IDM500CW200 Integra BLF888 Broadcast
IDM500CW300 Integra BLF878 Broadcast
IDM500CW80 Integra BLF871 Broadcast
ILD1011M15 Integra BLL6H0514-25 Microwave
ILD1011M150 Integra BLA6G1011-200R Microwave
ILD1011M15HV Integra BLA6H0514-25 Microwave
ILD1011M160HV Integra BLA6G1011-200R Microwave
ILD1011M250 Integra BLA6G1011-200R Microwave
ILD1011M30 Integra BLA6H0514-25 Microwave
ILD1011M400 Integra BLA6H0912-500 Microwave
ILD1011M450HV Integra BLA6H0912-500 Microwave
ILD1011M550HV Integra BLA6H1011-600 Microwave
ILD1214M10 Integra BLL6H0514-25 Microwave
ILD2731M140 Integra BLS6G2731-120 Microwave
ILD3135M120 Integra BLS6G3135S-120 Microwave
ILP1214EL200 Integra BLS7G2933P-200 Microwave
INA-51063 Agilent BGA2001 MMIC
J270 Standard J177 FET
J308 Standard J108 FET
J309 Standard J109 FET
J310 Standard J110 FET
JDP2S01E Toshiba BAP65-02 PIN diode
JDP2S01U Toshiba BAP65-03 PIN diode
JDP2S02AFS Toshiba BAP51-02 PIN diode
JDP2S02AS Toshiba BAP51-03 PIN diode
JDP2S02T Toshiba BAP63-02 PIN diode
JDP2S04E Toshiba BAP50-02 PIN diode
JDS2S03S Toshiba BA891 BS diode
JTDA150A Microsemi BLF177 Broadcast
KP2310R Toko BAP64-04W PIN diode
KTK920BT KEC BF1108 FET
KTK920T KEC BF1108R FET
KV1835E Toko BB199 Varicap
LC421 POLYFET BLF544 Broadcast
MA2S077 Standard BA277 BS diode
MA2S357 Matsushita BB178 Varicap
MA2S357 Matsushita BB187 Varicap
MA2S372 Matsushita BB179 Varicap
MA2S374 Matsushita BB182 Varicap
MA2SV01 Renesas BB202 Varicap
MA357 Matsushita BB153 Varicap
MA366 Matsushita BB148 Varicap
MA368 Matsushita BB131 Varicap
MA372 Matsushita BB149 Varicap
MA372 Matsushita BB149A Varicap
MA4CP101A Matsushita BAP65-03 PIN diode
MA4P274-1141 Matsushita BAP51-03 PIN diode
MA4P275-1141 Matsushita BAP65-03 PIN diode
MA4P275CK-287 Matsushita BAP65-05 PIN diode
MA4P277-1141 Matsushita BAP70-03 PIN diode
93NXP Semiconductors RF Manual 14th edition
Manufacturer type Manufacturer NXP type Product family
MA4P278-287 Matsushita BAP70-03 PIN diode
MA4P789-1141 Matsushita BAP1321-03 PIN diode
MA4P789ST-287 Matsushita BAP1321-04 PIN diode
MAX2659 Maxim BGU7005 MMIC
MC7712 NEC BGY785A CATV PPA
MC7716 NEC BGY787 CATV PPA
MC7722 NEC BGY785A CATV PPA
MC7726 NEC BGY787 CATV PPA
MC-7831 NEC BGY885A CATV PP
MC-7831-HA NEC BGY1085A CATV PP
MC-7832 NEC BGY887 CATV PP
MC-7832-HA NEC CGY1041 CATV PP
MC-7833 NEC BGY887B CATV PP
MC-7836 NEC BGY887B CATV PP
MC-7836 NEC CGY1047 CATV PP
MC-7845 NEC BGD802 CATV PD
MC-7846 NEC CGD942C CATV PD
MC-7847 NEC CGD944C CATV PD
MC7852 NEC BGY885A CATV PPA
MC7866 NEC BGD816L CATV PD
MC-7881 NEC BGD802 CATV PD
MC-7882 NEC BGD814 CATV PD
MC-7883 NEC CGD942C CATV PD
MC-7884 NEC CGD944C CATV PD
MC-7891 NEC CGD1042H CATV PD
MC-7893 NEC CGD1042H CATV PD
MC-7894 NEC CDG1044H CATV PD
MC-7896 NEC CGD1044H CATV PD
MCH4009 Sanyo BFG424F WB trs 5-7
MD7P19130 Freescale BLF6G20LS-110 Base Station
MD7P19130H Freescale BLF6G20LS-75 Base Station
MD7P19130H (2) Freescale BLF6G20(LS)-180RN Base station
MDS400 Microsemi BLA6H0912-500 Microwave
MDS800 Microsemi BLA6H1011-600 Microwave
MHW10186N Freescale BGY1085A CATV PP
MHW10236N Freescale CGY1043 CATV PP
MHW10247AN Freescale CGD1044H CATV PD
MHW10276N Freescale CGY1047 CATV PP
MHW1224 Freescale BGY67 CATV RA
MHW1244 Freescale BGY67A CATV RA
MHW1253LA Freescale BGY67A CATV RA
MHW1254L Freescale BGY68 CATV RA
MHW1254LA Freescale BGY68 CATV RA
MHW1304L Freescale BGY68 CATV RA
MHW1304LA Freescale BGY68 CATV RA
MHW1304LAN Freescale BGY68 CATV RA
MHW1346 Freescale BGY67A CATV RA
MHW1353LA Freescale BGY67A CATV RA
MHW1354LA Freescale BGY68 CATV RA
MHW5182A Freescale BGY585A CATV PPA
MHW5185B Freescale BGD502 CATV PD
MHW5222A Freescale BGY587 CATV PPA
MHW5272A Freescale BGY587B CATV PPA/HG
MHW5342A Freescale BGY588N CATV PPA/HG
MHW5342T Freescale BGY588N CATV PPA/HG
MHW6182 Freescale BGY585A CATV PPA
MHW6182-6 Freescale BGY685A CATV PPA
MHW6182T Freescale BGY585A CATV PPA
MHW6185B Freescale BGD502 CATV PD
MHW6185T Freescale BGD502 CATV PD
MHW6205 Freescale BGD704 CATV PD
MHW6222 Freescale BGY587 CATV PPA
MHW6222B Freescale BGY687 CATV PPA
MHW6222T Freescale BGY587 CATV PPA
MHW6272 Freescale BGY587B CATV PPA
MHW6272T Freescale BGY587B CATV PPA
MHW6342 Freescale BGY588N CATV PPA
MHW6342T Freescale BGY588N CATV PPA
MHW7182B Freescale BGY785A CATV PPA
MHW7182C Freescale BGY785A CATV PPA
MHW7185C2 Freescale BGD712 CATV PD
MHW7185CL Freescale BGD712 CATV PD
MHW7205C Freescale BGD714 CATV PD
MHW7205CL Freescale BGD714 CATV PD
MHW7205CLN Freescale BGD714 CATV PD
MHW7222 Freescale BGY787 CATV PPA
Manufacturer type Manufacturer NXP type Product family
MHW7222A Freescale BGY787 CATV PPA
MHW7222B Freescale BGY787 CATV PPA
MHW7242A Freescale BGE787B CATV PPA/HG
MHW7272A Freescale BGE787B CATV PPA/HG
MHW7292 Freescale BGE787B CATV PPA/HG
MHW7292A Freescale BGE787B CATV PPA/HG
MHW7292AN Freescale BGE787B CATV PPA/HG
MHW7342 Freescale BGE788 CATV PPA/HG
MHW8142 Freescale BGY883 CATV PPA
MHW8182B Freescale BGY885A CATV PPA
MHW8182C Freescale BGY885A CATV PPA
MHW8182CN Freescale BGY885A CATV PP
MHW8185 Freescale BGD814 CATV PD
MHW8185L Freescale BGD812 CATV PD
MHW8188AN Freescale CGD942C CATV PD
MHW8205 Freescale BGD814 CATV PD
MHW820L Freescale BGD814 CATV PD
MHW8222BN Freescale BGY887 CATV PP
MHW8227A Freescale CGD942C CATV PD
MHW8227AN Freescale CGD942C CATV PD
MHW8247A Freescale CGD944C CATV PPA
MHW8247AN Freescale CGD944C CATV PD
MHW8292 Freescale BGY887B CATV PPA
MHW8342 Freescale BGY888 CATV PPA
MHW8342N Freescale CGY888C CATV PP
MHW9146 Freescale BGY883 CATV PPA
MHW9182B Freescale BGY1085A CATV PPA
MHW9182C Freescale BGY1085A CATV PPA
MHW9182CN Freescale BGY1085A CATV PP
MHW9186 Freescale BGY885A CATV PPA
MHW9186A Freescale BGY885A CATV PPA
MHW9187N Freescale CGD942C CATV PD
MHW9188AN Freescale CGD942C CATV PD
MHW9188N Freescale CGD942C CATV PD
MHW9227AN Freescale CGD942C CATV PD
MHW9242A Freescale CGD1042 CATV PD
MHW9247 Freescale CGD944C CATV PD
MHW9247A Freescale CGD944C CATV PD
MHW9247AN Freescale CGD944C CATV PD
MHW9247N Freescale CGD944C CATV PD
MHWJ5272A Freescale BGY587B CATV PPA
MHWJ7185A Freescale BGD712 CATV PD
MHWJ7205A Freescale BGD714 CATV PD
MHWJ7292 Freescale BGE787B CATV PPA/HG
MHWJ9182 Freescale BGY1085A CATV PPA
MMBF4391 Freescale PMBF4391 FET
MMBF4392 Freescale PMBF4392 FET
MMBF4393 Freescale PMBF4393 FET
MMBF4860 Freescale PMBFJ112 FET
MMBF5484 Freescale BFR31 FET
MMBFJ113 Freescale PMBFJ113 FET
MMBFJ174 Freescale PMBFJ174 FET
MMBFJ175 Freescale PMBFJ175 FET
MMBFJ176 Freescale PMBFJ176 FET
MMBFJ177 Freescale PMBFJ177 FET
MMBFJ308 Freescale PMBFJ308 FET
MMBFJ309 Freescale PMBFJ309 FET
MMBFJ310 Freescale PMBFJ310 FET
MMBFU310 Freescale PMBFJ310 FET
MMBR5031L Freescale BFS17 WB trs 1-4
MMBR5179L Freescale BFS17A WB trs 1-4
MMBR571L Freescale PBR951 WB trs 1-4
MMBR901L Freescale BFR92A WB trs 1-4
MMBR911L Freescale BFR93A WB trs 1-4
MMBR920L Freescale BFR93A WB trs 1-4
MMBR931L Freescale BFT25A WB trs 1-4
MMBR941BL Freescale PBR941 WB trs 1-4
MMBR941L Freescale PBR941 WB trs 1-4
MMBR951AL Freescale PBR951 WB trs 1-4
MMBR951L Freescale PBR951 WB trs 1-4
MMBV105GLT1 ONSemicond. BB156 Varicap
MMBV109LT1 ONSemicond. BB148 Varicap
MMG2001NT1 Freescale BGD816L CATV PD
MMG2001T1 Freescale BGD816L CATV PD
MPAL2731M15 Integra BLS6G2731-6G Microwave
MPAL2731M30 Integra BLS6G2731-6G Microwave
94 NXP Semiconductors RF Manual 14th edition
Manufacturer type Manufacturer NXP type Product family
MPAL3035M15 Integra BLS6G2731-6G Microwave
MPAL3035M30 Integra BLS6G2731-6G Microwave
MPF102 Standard BF245A FET
MPF970 Standard J174 FET
MPF971 Standard J176 FET
MRF10005 M/A- COM BLA6H0912-500 Microwave
MRF1000MB M/A- COM BLA6H0912-500 Microwave
MRF10031 M/A- COM BLA6H0912-500 Microwave
MRF1004MB M/A- COM BLA6H0912-500 Microwave
MRF10120 M/A- COM BLA6H0912-500 Microwave
MRF10150 M/A- COM BLL6H0514-25 Microwave
MRF10350 M/A- COM BLL6H0514-25 Microwave
MRF10502 M/A- COM BLL6H0514-25 Microwave
MRF1090MB M/A- COM BLA6H0912-500 Microwave
MRF1150MA M/A- COM BLA6H0912-500 Microwave
MRF1150MB M/A- COM BLA6H0912-500 Microwave
MRF134 M/A- COM BLF871 Broadcast
MRF136 M/A- COM BLF871 Broadcast
MRF136Y M/A- COM BLF881 Broadcast
MRF137 M/A- COM BLF881 Broadcast
MRF140 M/A- COM BLF177 Broadcast
MRF141 M/A- COM BLF177 Broadcast
MRF141G M/A- COM BLF278 Broadcast
MRF148A M/A- COM BLF175 Broadcast
MRF150 M/A- COM BLF177 Broadcast
MRF151 M/A- COM BLF177 Broadcast
MRF151A M/A- COM BLF177 Broadcast
MRF151G M/A- COM BLF278 Broadcast
MRF154 M/A- COM BLF574 Broadcast
MRF157 M/A- COM BLF574 Broadcast
MRF158 M/A- COM BLF871 Broadcast
MRF160 M/A- COM BLF871 Broadcast
MRF166C M/A- COM BLF871 Broadcast
MRF166W M/A- COM BLF881 Broadcast
MRF171A M/A- COM BLF881 Broadcast
MRF173 M/A- COM BLF871 Broadcast
MRF173CQ M/A- COM BLF871 Broadcast
MRF174 M/A- COM BLF881 Broadcast
MRF175GU M/A- COM BLF881 Broadcast
MRF175GV M/A- COM BLF278 Broadcast
MRF175LU M/A- COM BLF871 Broadcast
MRF176GU M/A- COM BLF881 Broadcast
MRF176GV M/A- COM BLF573S Broadcast
MRF177 M/A- COM BLF871 Broadcast
MRF18030ALR3(1) Freescale BLF6G21-30 Base Station
MRF18030ALR3(1) Freescale BLF6G20-45 Base Station
MRF18030ALSR3(1) Freescale BLF6G21-30 Base Station
MRF18030ALSR3(1) Freescale BLF6G20-45 Base Station
MRF18030BLR3(1) Freescale BLF6G21-30 Base Station
MRF18030BLR3(1) Freescale BLF6G20-45 Base Station
MRF18030BLSR3(1) Freescale BLF6G21-30 Base Station
MRF18030BLSR3(1) Freescale BLF6G20-45 Base Station
MRF18060AL(2) Freescale BLC6G20-75 Base Station
MRF18060BL(2) Freescale BLC6G20-75 Base Station
MRF18085AL(2) Freescale BLC6G20-75 Base Station
MRF18085BL (2) Freescale BLF7G20L(S)-300P Base station
MRF18085BL(2) Freescale BLC6G20-75 Base Station
MRF18090AR3(1) Freescale BLF6G20-110 Base Station
MRF18090B (2) Freescale BLF7G20L(S)-300P Base station
MRF18090B(2) Freescale BLF6G20-110 Base Station
MRF19030L(2) Freescale BLF6G21-30 Base Station
MRF19030L(2) Freescale BLF6G20-45 Base Station
MRF19045L(2) Freescale BLF6G20-45 Base Station
MRF19060L(2) Freescale BLF6G20-45 Base Station
MRF19085LR3(1) Freescale BLF6G20-110 Base Station
MRF19085LSR3(1) Freescale BLF6G20-110 Base Station
MRF19090R3 (1) Freescale BLF7G20L(S)-300P Base station
MRF19090R3(1) Freescale BLF6G20-110 Base Station
MRF19090SR3 (1) Freescale BLF7G20L(S)-300P Base station
MRF19090SR3(1) Freescale BLF6G20-110 Base Station
MRF19125 (2) Freescale BLF6G20(LS)-110 Base station
MRF19125(2) Freescale BLF6G20-140 Base Station
MRF21010LR1(1) Freescale BLF3G21-6 Base Station
MRF21010LSR1(1) Freescale BLF3G21-6 Base Station
MRF21030LR3(1) Freescale BLF6G22-30 Base Station
MRF21030LSR3(1) Freescale BLF6G22-45 Base Station
Manufacturer type Manufacturer NXP type Product family
MRF21045LR3(1) Freescale BLF6G22-45 Base Station
MRF21045LSR3(1) Freescale BLF6G22-45 Base Station
MRF21060L(2) Freescale BLF6G22-75 Base Station
MRF21085L(2) Freescale BLF6G22-100 Base Station
MRF21090(2) Freescale BLF6G22-100 Base Station
MRF21120R6(1) Freescale BLF6G22-130 Base Station
MRF21125(2) Freescale BLF6G22-130 Base Station
MRF21125SR3(1) Freescale BLF6G22-130 Base Station
MRF21180R6(1) Freescale BLF6G22-180 Base Station
MRF275G M/A- COM BLF881 Broadcast
MRF275L M/A- COM BLF871 Broadcast
MRF281SR1(1) Freescale BLF6G21-6 Base Station
MRF281ZR1(1) Freescale BLF6G21-6 Base Station
MRF282SR1(1) Freescale BLF1822-10 Base Station
MRF282ZR1(1) Freescale BLF1822-10 Base Station
MRF284LR1(1) Freescale BLF3G21-30 Base Station
MRF284LSR1(1) Freescale BLF3G21-30 Base Station
MRF313 M/A- COM BLF871 Broadcast
MRF314 M/A- COM BLF881 Broadcast
MRF316 M/A- COM BLF871 Broadcast
MRF317 M/A- COM BLF871 Broadcast
MRF321 M/A- COM BLF871 Broadcast
MRF323 M/A- COM BLF871 Broadcast
MRF327 M/A- COM BLF871 Broadcast
MRF372 (3) Freescale BLF881 Base station
MRF373ALR1 (2) Freescale BLF878 Base station
MRF374A (1) Freescale BLF881 Base station
MRF377H (2) Freescale BLF878 Base station
MRF377H(2) Freescale BLF872 Broadcast
MRF392 M/A- COM BLF881 Broadcast
MRF393 M/A- COM BLF871 Broadcast
MRF421 M/A- COM BLF871 Broadcast
MRF422 M/A- COM BLF177 Broadcast
MRF426 M/A- COM BLF871 Broadcast
MRF428 M/A- COM BLF177 Broadcast
MRF429 M/A- COM BLF177 Broadcast
MRF448 M/A- COM BLF573S Broadcast
MRF454 M/A- COM BLF871 Broadcast
MRF455 M/A- COM BLF871 Broadcast
MRF577 Freescale PRF957 WB trs 1-4
MRF5811L Freescale BFG93A/X WB trs 1-4
MRF5P20180HR6(1) Freescale BLF6G20-180P Base Station
MRF5P21045NR1 (1) Freescale BLD6G22L(S)-50 Base station
MRF5P21180HR6 (1) Freescale BLF6G22(LS)-180RN Base station
MRF5P21180HR6(1) Freescale BLF6G20-180P Base Station
MRF5S19060N(2) Freescale BLF6G20-75 Base Station
MRF5S19090HR3(1) Freescale BLF6G20-110 Base Station
MRF5S19090HSR3(1) Freescale BLF6G20-110 Base Station
MRF5S19100H (2) Freescale BLF7G20L(S)-140P Base station
MRF5S19100H(2) Freescale BLF6G20-110 Base Station
MRF5S19130H (2) Freescale BLF6G20(LS)-110 Base station
MRF5S19130H(2) Freescale BLF6G20-140 Base Station
MRF5S19150H (2) Freescale BLF6G20LS-140 Base station
MRF5S19150H(2) Freescale BLF6G22-150P Base Station
MRF5S21045N (2) Freescale BLD6G22L(S)-50 Base station
MRF5S21045N(2) Freescale BLF1822-10 Base Station
MRF5S21090HR3(1) Freescale BLF6G22-100 Base Station
MRF5S21090HSR3(1) Freescale BLF6G22-100 Base Station
MRF5S21100HR3(1) Freescale BLF6G22-100 Base Station
MRF5S21100HSR3(1) Freescale BLF6G22-100 Base Station
MRF5S21130HR3(1) Freescale BLF6G22-130 Base Station
MRF5S21130HSR3(1) Freescale BLF6G22-130 Base Station
MRF5S21150H(2) Freescale BLF6G22-150P Base Station
MRF5S9150H (2) Freescale BLF6G10(LS)-160RN Base station
MRF6P18190HR6(1) Freescale BLF6G20-180P Base Station
MRF6P21190HR6 (1) Freescale BLF7G22LS-130 Base station
MRF6P21190HR6(1) Freescale BLF6G20-180P Base Station
MRF6P3300H (2) Freescale BLF888 Base station
MRF6P3300H(2) Freescale BLF878 Broadcast
MRF6S18060N(2) Freescale BLF6G20-75 Base Station
MRF6S18100N(2) Freescale BLF6G20-110 Base Station
MRF6S18140H(2) Freescale BLF6G20-140 Base Station
MRF6S19060N(2) Freescale BLF6G20-75 Base Station
MRF6S19100H (2) Freescale BLF7G20L(S)-140P Base station
MRF6S19100H(2) Freescale BLF6G20-110 Base Station
MRF6S19100N(2) Freescale BLF6G20-110 Base Station
95NXP Semiconductors RF Manual 14th edition
Manufacturer type Manufacturer NXP type Product family
MRF6S19120H (2) Freescale BLF7G20L(S)-140P Base station
MRF6S19120H(2) Freescale BLF6G20-110 Base Station
MRF6S19140H (2) Freescale BLF6G20LS-75 Base station
MRF6S19140H(2) Freescale BLF6G20-140 Base Station
MRF6S19200H (2) Freescale BLF6G20-180PN,
BLF7G20L(S)-200 Base station
MRF6S20010 Freescale BLM6G22-30 Base Station
MRF6S20010 Freescale BLM6G22-30G Base Station
MRF6S20010N (2) Freescale BLM6G22-30 Base station
MRF6S20010N(2) Freescale BLF6G21-6 Base Station
MRF6S20010N(2) Freescale BLF1822-10 Base Station
MRF6S21050L(2) Freescale BLF6G22-45 Base Station
MRF6S21060N (2) Freescale BLF6G22LS-75 Base station
MRF6S21060N(2) Freescale BLF6G22-75 Base Station
MRF6S21100H (2) Freescale BLF6G22LS-100 Base station
MRF6S21100H(2) Freescale BLF6G22-100 Base Station
MRF6S21100N (2) Freescale BLF6G22LS-100 Base station
MRF6S21100N(2) Freescale BLF6G22-100 Base Station
MRF6S21140H (2) Freescale BLF6G22L(S)-130 Base station
MRF6S21140H(2) Freescale BLF6G22-130 Base Station
MRF6S21190H Freescale BLF6G22-180P Base Station
MRF6S21190H Freescale BLF6G22-180PN Base Station
MRF6S21190H (2) Freescale BLF7G22L(S)-200 Base station
MRF6S23100H (2) Freescale BLF7G27L(S)-75P Base station
MRF6S23100H (2) Freescale BLF7G27L(S)-75P Base station
MRF6S27015N Freescale BLF6G27-10 Base Station
MRF6S27015N (2) Freescale BLF6G27-10(G) Base station
MRF6S27015N (2) Freescale BLF6G27-10(G) Base station
MRF6S27050HR3 Freescale BLF6G27-45 Base station
MRF6S27050HSR3 Freescale BLF6G27S-45 Base station
MRF6S27085H Freescale BLF6G27LS-135 Base Station
MRF6S27085H (2) Freescale BLF7G27L(S)-140 Base station
MRF6S27085HR3 Freescale BLF6G27-135 Base station
MRF6S27085HS Freescale BLF6G27LS-75 Base Station
MRF6S27085HSR3 Freescale BLF6G27LS-135 Base station
MRF6V2010N (2) Freescale BLF571 Base station
MRF6V2010N(2) Freescale BLF244 Broadcast
MRF6V2010NBR1(18a) Freescale BLF872 Broadcast
MRF6V2010NR1(18a) Freescale BLF871 Broadcast
MRF6V2150N (2) Freescale BLF871 Base station
MRF6V2150N(2) Freescale BLF177 Broadcast
MRF6V2150NBR1(18a) Freescale BLF882 Broadcast
MRF6V2150NR1(18a) Freescale BLF881 Broadcast
MRF6V2300N (2) Freescale BLF573S Base station
MRF6V2300N(2) Freescale BLF369 Broadcast
MRF6V2300N(2) Freescale BLF378 Broadcast
MRF6V4300N (2) Freescale BLF573S Base station
MRF6VP11KH (1) Freescale BLF578 Base station
MRF6VP21KH (1) Freescale BLF578 Base station
MRF6VP2600H (1) Freescale BLF871 Base station
MRF6VP2600HR6(18o) Freescale BLF881 Broadcast
MRF6VP3450 Freescale BLF878 Broadcast
MRF6VP3450H (4) Freescale BLF878 Base station
MRF6VP41KH (2) Freescale BLF578 Base station
MRF7S15100H (2) Freescale BLF6G15L(S)-40BRN/
BLF6G15L(S)-250PBRN Base station
MRF7S18125AHS Freescale BLF6G20LS-140 Base Station
MRF7S18170H (2) Freescale BLF7G20L(S)-200 Base station
MRF7S18170H(2) Freescale BLF6G22-180 Base Station
MRF7S19080H (2) Freescale BLF6G20(LS)-110 Base station
MRF7S19080H(2) Freescale BLF6G20-110 Base Station
MRF7S19080HS Freescale BLF6G20LS-75 Base Station
MRF7S19100 Freescale BLF6G20LS-110 Base Station
MRF7S19100N (2) Freescale BLF6G20LS-75 Base station
MRF7S19100N(2) Freescale BLF6G20-110 Base Station
MRF7S19120N(1) Freescale BLF6G20-110 Base Station
MRF7S19120NR1 (1) Freescale BLF6G20LS-140 Base station
MRF7S19170H (2) Freescale BLF6G20-180PN,
BLF7G20L(S)-200 Base station
MRF7S19170H(2) Freescale BLF6G20-180 Base Station
"MRF7S19210H
PTFA192401F" Freescale BLF6G20-230PRN Base Station
MRF7S21080H (2) Freescale BLF6G22LS-100 Base station
MRF7S21110H (2) Freescale BLF6G22L(S)-130 Base station
MRF7S21110HS Freescale BLF6G22LS-100 Base Station
MRF7S21150H (2) Freescale BLF7G22LS-130 Base station
Manufacturer type Manufacturer NXP type Product family
MRF7S21170 Freescale BLF6G22LS-100 Base Station
MRF7S21170H (2) Freescale BLF6G22-180PN Base station
MRF7S21210H (2) Freescale BLF7G22L(S)-250P Base station
MRF7S27130H (2) Freescale BLF7G27L(S)-140 Base station
MRF7S38010H Freescale BLF6G38-10G Base Station
MRF7S38010H (2) Freescale BLF6G38(S)-25 Base station
MRF7S38040H Freescale BLF6G38LS-50 Base Station
MRF7S38040H (2) Freescale BLF6G38(LS)-50 Base station
MRF7S38040HR3 Freescale BLF6G28-50 Base station
MRF7S38040HSR3 Freescale BLF6G28LS-51 Base station
MRF8S18120H (2) Freescale BLF7G20L(S)-250P Base station
MRF9030L (2) Freescale BLF6G10(LS)-160RN Base station
MRF9030N (2) Freescale BLF6G10(LS)-160RN Base station
MRF9135L (2) Freescale BLF6G10(LS)-135RN Base station
MRF917 Freescale BFQ67W WB trs 1-4
MRF9200L (2) Freescale BLF6G10L(S)-260PRN Base station
MRF9210R3 (1) Freescale BLF6G10L(S)-260PRN Base station
MRF927 Freescale BFS25A WB trs 1-4
MRF9411L Freescale BFG520/X WB trs 1-4
MRF947 Freescale BFS520 WB trs 1-4
MRF947A Freescale PRF947 WB trs 1-4
MRF9511L Freescale BFG540/X WB trs 1-4
MRF957 Freescale PRF957 WB trs 1-4
MRFE6P3300H Freescale BLF878 Broadcast
MRFE6S9125N Freescale BLF6G10LS-135R Base Station
MRFE6S9125N (2) Freescale BLF6G10(LS)-135RN Base station
MRFE6S9130H (2) Freescale BLF6G10(LS)-135RN Base station
MRFE6S9135H (2) Freescale BLF6G10(LS)-200RN Base station
MRFE6S9135HS Freescale BLF6G10LS-135R Base Station
MRFE6S9160H (2) Freescale BLF6G10(LS)-160RN Base station
MRFE6S9201H (2) Freescale BLF6G10(LS)-200RN Base station
MRFE6S9205HS Freescale BLF6G10LS-200RN Base Station
MS1003 Microsemi BLF645 Broadcast
MS1004 Microsemi BLF888 Broadcast
MS1007 Microsemi BLF871 Broadcast
MS1008 Microsemi BLF871 Broadcast
MS1011 Microsemi BLF888 Broadcast
MS1051 Microsemi BLF871 Broadcast
MS1076 Microsemi BLF888 Broadcast
MS1078 Microsemi BLF871 Broadcast
MS1079 Microsemi BLF888 Broadcast
MS1204 Microsemi BLF645 Broadcast
MS1277 Microsemi BLF888 Broadcast
MS1278 Microsemi BLF888 Broadcast
MS1279 Microsemi BLF888 Broadcast
MS1280 Microsemi BLF888 Broadcast
MS1329 Microsemi BLF878 Broadcast
MS1453 Microsemi BLF881 Broadcast
MS1503 Microsemi BLF871 Broadcast
MS1506 Microsemi BLF881 Broadcast
MS1507 Microsemi BLF881 Broadcast
MS1509 Microsemi BLF871 Broadcast
MS1511 Microsemi BLF878 Broadcast
MS1533 Microsemi BLF645 Broadcast
MS2001 Microsemi BLF6G22-45 Broadcast
MS2003 Microsemi BLF6G22-45 Broadcast
MS2003 Microsemi BLF6G22-45 Broadcast
MS2005 Microsemi BLF6G22-45 Broadcast
MS2010 Microsemi BLF6G22-45 Broadcast
MS2176 Microsemi BLF878 Broadcast
MS2200 Microsemi BLA6H0912-500 Microwave
MS2207 Microsemi BLA6H0912-500 Microwave
MS2210 Microsemi BLA6G1011-200R Microwave
MS2215 Microsemi BLF177 Broadcast
MS2267 Microsemi BLA6G1011-200R Microwave
MS2321 Microsemi BLL6H0514-25 Microwave
MS24221 Microsemi BLA6G1011-200R Microwave
MS2441 Microsemi BLAH0912-500 Microwave
MS2472 Microsemi BLAH0912-500 Microwave
MS2473 Microsemi BLA6H1011-600 Microwave
MS2553 Microsemi BLL6H0514-25 Microwave
MS2575 Microsemi BLL6H0514-25 Microwave
MS3024 Microsemi BLF6G22-45 Broadcast
MSC1015MP Microsemi BLL6H0514-25 Microwave
MSC1175M Microsemi BLA6G1011-200R Microwave
MSC1400M Microsemi BLAH0912-500 Microwave
96 NXP Semiconductors RF Manual 14th edition
Manufacturer type Manufacturer NXP type Product family
MSC1450M Microsemi BLA6H0912-500 Microwave
MT4S200T Toshiba BFG424W WB trs 5-7
MT4S200U Toshiba BFG425W WB trs 5-7
MT4S34U Toshiba BFG410W WB trs 5-7
MV2109G ONSemicond. BB182LX Varicap
MW6IC2240N (2) Freescale BLF6G22LS-75 Base station
MW6S004NT1 (1) Freescale BLF6G21-10G Base station
MW7IC2725GNR1 Freescale BLF6G27-10G Base station
MW7IC2725N Freescale BLF6G27-10G Base Station
MW7IC2725N Infineon BLF6G27-10G Base Station
MW7IC2725NB Freescale BLF6G27-10 Base station
MW7IC2725NR1 Freescale BLF6G27-10 Base station
MW7IC2750GNR1 Freescale BLF6G27LS-75 Base station
MW7IC2750N (3) Freescale BLF6G27(LS)-75 Base station
MW7IC2750NR1 Freescale BLF6G27-75 Base station
MW7IC3825GN Freescale BLF6G38S-25 Base station
MW7IC3825N Freescale BLF6G38-25 Base station
MW7IC3825N (3) Freescale BLF6G38(S)-25 Base station
MW7IC3825NB Freescale BLF6G38-25 Base station
MW7IC915N (1) Freescale BLF6G10L(S)-260PRN Base station
NESG3032M14 NEC BFU725F WB trs 5-7
NESG3032M14 Infineon BFU725F WB trs 5-7
PD55012-E ST BLF571 Broadcast
PD55025-E ST BLF571 Broadcast
PD55035-E ST BLF571 Broadcast
PD57018-E ST BLL6H0514-25 Microwave
PD57030-E ST BLL6H0514-25 Microwave
PD57045-E ST BLL6H0514-25 Microwave
PD57060-E ST BLL6H0514-25 Microwave
PD57070-E ST BLL6H0514-25 Microwave
PD85015-E ST BLF571 Broadcast
PD85025C ST BLF571 Broadcast
PD85025-E ST BLF571 Broadcast
PD85035C ST BLF571 Broadcast
PD85035-E ST BLF571 Broadcast
PRF134 POLYFET BLF242 Broadcast
PRF134 Infineon BLF242 Broadcast
PRF136 POLYFET BLF244 Broadcast
PRF136 Infineon BLF244 Broadcast
PRF947B Motorola PRF947 WB trs 1-4
PRF947B Infineon PRF947 WB trs 1-4
PTF 180101S - 10 W Infineon BLF6G20-40 Base Station
PTF 191601E - 160 W Infineon BLF7G20L(S)-300P Base Station
PTF 210101M - 10 W Infineon BLD6G22L(S)-50 Base Station
PTF 210451E - 45 W Infineon BLF7G22L(S)-200 Base Station
PTF 210451F - 45 W Infineon BLF7G22L(S)-200 Base Station
PTF 240101S - 10 W Infineon BLF7G27L(S)-100 Base Station
PTF041501E-150W Infineon BLF647 Broadcast
PTF041501E-150W Infineon BLF647 Broadcast
PTF041501F-150W Infineon BLF647 Broadcast
PTF041501F-150W Infineon BLF647 Broadcast
PTF080101M-10W Infineon BLF1043 Base Station
PTF080101M-10W Infineon BLF1043 Base Station
PTF080101S-10W Infineon BLF1043 Base Station
PTF080101S-10W Infineon BLF1043 Base Station
PTF081301E-130W Infineon BLF4G10-120 Base Station
PTF081301E-130W Infineon BLF4G10-120 Base Station
PTF081301F-130W Infineon BLF4G10-120 Base Station
PTF081301F-130W Infineon BLF4G10-120 Base Station
PTF082001E-200W Infineon BLF6G10-200 Base Station
PTF082001E-200W Infineon BLF6G10-200 Base Station
PTF180101 Freescale BLF6G21-10G Base Station
PTF180101 Infineon BLF6G21-10G Base Station
PTFA 142401EL - 240 W Infineon BLF6G15L(S)-250PBRN Base Station
PTFA 142401FL - 240 W Infineon BLF6G15L(S)-250PBRN Base Station
PTFA 180701E - 70 W Infineon BLF6G20(LS)-110 Base Station
PTFA 180701F - 70 W Infineon BLF6G20(LS)-110 Base Station
PTFA 181001E - 100 W Infineon BLF6G20(LS)-180RN Base Station
PTFA 181001F - 100 W Infineon BLF6G20(LS)-180RN Base Station
PTFA 181001GL - 100 W Infineon BLF6G20(LS)-180RN Base Station
PTFA 191001E - 100 W Infineon BLF6G20(LS)-110 Base Station
PTFA 191001F - 100 W Infineon BLF6G20(LS)-110 Base Station
PTFA 192001E - 200 W Infineon BLF6G20-180PN Base Station
PTFA 192001F - 200 W Infineon BLF6G20-180PN Base Station
PTFA 192401E - 240 W Infineon BLF6G20-180PN Base Station
PTFA 192401F - 240 W Infineon BLF6G20-180PN Base Station
Manufacturer type Manufacturer NXP type Product family
PTFA 210301E - 30 W Infineon BLD6G22L(S)-50 Base Station
PTFA 210701E - 70 W Infineon BLF6G22LS-75 Base Station
PTFA 210701F - 70 W Infineon BLF6G22LS-75 Base Station
PTFA 211001E - 100 W Infineon BLF6G22LS-100 Base Station
PTFA 211801E - 180 W Infineon BLF7G22L(S)-250P Base Station
PTFA 211801F - 180 W Infineon BLF7G22L(S)-250P Base Station
PTFA 212001E - 200 W Infineon BLF6G22-180PN Base Station
PTFA 212001F - 200 W Infineon BLF6G22-180PN Base Station
PTFA 212002E - 200 W Infineon BLF7G22LS-130 Base Station
PTFA 212401E - 240 W Infineon BLF6G22-180PN Base Station
PTFA 212401F - 240 W Infineon BLF6G22-180PN Base Station
PTFA 240451E - 45 W Infineon BLF7G27L(S)-100 Base Station
PTFA 260451E - 45 W Infineon BLF6G27(LS)-75 Base Station
PTFA 260851E - 85 W Infineon BLF6G27L(S)-45BN Base Station
PTFA 260851F - 85 W Infineon BLF6G27(LS)-135 Base Station
PTFA 261301E - 130 W Infineon BLF7G27L(S)-200P Base Station
PTFA 261301F - 130 W Infineon BLF7G27L(S)-100 Base Station
PTFA 261702E - 170 W Infineon BLF7G27L(S)-140 Base Station
PTFA043002E-300W Infineon BLF878 Broadcast
PTFA043002E-300W Infineon BLF878 Broadcast
PTFA080551E-55W Infineon BLF6G10-45 Base Station
PTFA080551F-55W Infineon BLF6G10-45 Base Station
PTFA081501E-150W Infineon BLF6G10-160 Base Station
PTFA081501F-150W Infineon BLF6G10-160 Base Station
PTFA091201E-120W Infineon BLF4G10-120 Base Station
PTFA091201F-120W Infineon BLF4G10-120 Base Station
PTMA 210452EL - 45 W Infineon BLF6G22(S)-45 Base Station
PTMA 210452FL - 45 W Infineon BLF6G22(S)-45 Base Station
PZFJ108 Standard J108 FET
PZFJ109 Standard J109 FET
PZFJ110 Standard J110 FET
R0605250L Standard BGY66B CATV RA
R0605300L Standard BGY68 CATV RA
R2005240 Standard BGY67A CATV RA
RN142G Rohm BAP1321-03 PIN diode
RN142S Rohm BAP1321-02 PIN diode
RN242CS Rohm BAP51LX PIN diode
RN731V Rohm BAP50-03 PIN diode
RN739D Rohm BAP50-04 PIN diode
RN739F Rohm BAP50-04W PIN diode
S505T Vishay BF1101 FET
S505TR Vishay BF1101R FET
S505TRW Vishay BF1101WR FET
S5540220 Standard BGY587 CATV PPA
S595T Vishay BF1105 FET
S595TR Vishay BF1105R FET
S595TRW Vishay BF1105WR FET
S7540185 Standard BGY785A CATV PPA
S7540215 Standard BGY787 CATV PPA
S8740190 Standard BGD812 CATV PD
S8740220 Standard BGD814 CATV PD
S8740230 Standard BGD816L CATV PD
S949T Vishay BF1109 FET
S949TR Vishay BF1109R FET
S949TRW Vishay BF1109WR FET
S974T Vishay BF1109 FET
S974T-GS08 Vishay BF1109 FET
S974TR Vishay BF1109R FET
S974TR-GS08 Vishay BF1109R FET
S974TRW Vishay BF1109WR FET
S974TRW-GS08 Vishay BF1109WR FET
SA701 POLYFET BLF145 Broadcast
SA701 POLYFET BLF245 Broadcast
SA741 POLYFET BLF175 Broadcast
SD1018 Microsemi BLF881 Broadcast
SD1018-06 Microsemi BLF881 Broadcast
SD1019-05 Microsemi BLF645 Broadcast
SD1422 Microsemi BLF871 Broadcast
SD1485 Microsemi BLF888 Broadcast
SD56120 ST BLF871 Broadcast
SD56120M ST BLF881 Broadcast
SD57030 ST BLL6H0514-25 Microwave
SD57030-01 ST BLL6H0514-25 Microwave
SD57120 ST BLF578 Broadcast
SD702 POLYFET BLF246B Broadcast
SDV701Q AUK BB179 Varicap
97NXP Semiconductors RF Manual 14th edition
Manufacturer type Manufacturer NXP type Product family
SDV704Q AUK BB178 Varicap
SDV705Q AUK BB182 Varicap
SE701 POLYFET BLF245B Broadcast
SGA8343Z Sirenza BFG425W WB trs 5-7
SK701 POLYFET BLF544B Broadcast
SK701 POLYFET BLF545 Broadcast
SK702 POLYFET BLF546 Broadcast
SM341 POLYFET BLF177 Broadcast
SM704 POLYFET BLF147 Broadcast
SM704 POLYFET BLF246 Broadcast
SMP1302-004 Skyworks BAP50-05 PIN diode
SMP1302-005 Skyworks BAP50-04 PIN diode
SMP1302-011 Skyworks BAP50-03 PIN diode
SMP1302-074 Skyworks BAP50-05W PIN diode
SMP1302-075 Skyworks BAP50-04W PIN diode
SMP1302-079 Skyworks BAP50-02 PIN diode
SMP1304-001 Skyworks BAP70-03 PIN diode
SMP1304-011 Skyworks BAP70-03 PIN diode
SMP1307-001 Skyworks BAP70-03 PIN diode
SMP1307-011 Skyworks BAP70-03 PIN diode
SMP1320-004 Skyworks BAP65-05 PIN diode
SMP1320-011 Skyworks BAP65-03 PIN diode
SMP1320-074 Skyworks BAP65-05W PIN diode
SMP1321-001 Skyworks BAP1321-03 PIN diode
SMP1321-005 Skyworks BAP1321-04 PIN diode
SMP1321-011 Skyworks BAP1321-03 PIN diode
SMP1321-075 Skyworks BAP1321-04 PIN diode
SMP1321-079 Skyworks BAP1321-02 PIN diode
SMP1322-004 Skyworks BAP65-05 PIN diode
SMP1322-011 Skyworks BAP65-03 PIN diode
SMP1322-074 Skyworks BAP65-05W PIN diode
SMP1322-079 Skyworks BAP65-02 PIN diode
SMP1340-011 Skyworks BAP63-03 PIN diode
SMP1340-079 Skyworks BAP63-02 PIN diode
SMP1352-011 Skyworks BAP64-03 PIN diode
SMP1352-079 Skyworks BAP64-02 PIN diode
SMV1235-004 Skyworks BB181 Varicap
SMV1236-004 Skyworks BB156 Varicap
SR341 POLYFET BLF378 Broadcast
SR341 POLYFET BLF278 Broadcast
SR401 POLYFET BLF248 Broadcast
SR401 POLYFET BLF348 Broadcast
SR401 POLYFET BLF368 Broadcast
SR703 POLYFET BLF547 Broadcast
SR704U POLYFET BLF548 Broadcast
SST111 Standard PMBFJ111 FET
SST112 Standard PMBFJ112 FET
SST113 Standard PMBFJ113 FET
SST174 Standard PMBFJ174 FET
SST175 Standard PMBFJ175 FET
SST176 Standard PMBFJ176 FET
SST177 Standard PMBFJ177 FET
SST201 Standard BFT46 FET
SST202 Standard BFR31 FET
SST203 Standard BFR30 FET
SST308 Standard PMBFJ308 FET
SST309 Standard PMBFJ309 FET
SST310 Standard PMBFJ310 FET
SST4391 Standard PMBF4391 FET
SST4392 Standard PMBF4392 FET
SST4393 Standard PMBF4393 FET
SST4856 Standard BSR56 FET
SST4857 Standard BSR57 FET
SST4859 Standard BSR56 FET
SST4860 Standard BSR57 FET
SST4861 Standard BSR58 FET
Manufacturer type Manufacturer NXP type Product family
ST704 POLYFET BLF346 Broadcast
ST744 POLYFET BLF276 Broadcast
ST744 POLYFET BLF277 Broadcast
SVC201SPA Sanyo BB187 Varicap
TAN150 Microsemi BLF177 Broadcast
TAN250A Microsemi BLA6G1011-200R Microwave
TAN300 Microsemi BLA6G1011-200R Microwave
TBB1016 Renesas BF1204 FET
TCS450 Microsemi BLA6H0912-500 Microwave
TCS800 Microsemi BLA6H1011-600 Microwave
TMF3201J AUK BF1204 FET
TMF3202Z AUK BF1202WR FET
TMPF4091 Standard PMBF4391 FET
TMPF4092 Standard PMBF4392 FET
TMPF4093 Standard PMBF4393 FET
TMPF4391 Standard PMBF4391 FET
TMPF4392 Standard PMBF4392 FET
TMPF4393 Standard PMBF4393 FET
TMPFB246A Standard BSR56 FET
TMPFB246B Standard BSR57 FET
TMPFB246C Standard BSR58 FET
TMPFJ111 Standard PMBFJ111 FET
TMPFJ112 Standard PMBFJ112 FET
TMPFJ113 Standard PMBFJ113 FET
TMPFJ174 Standard PMBFJ174 FET
TMPFJ175 Standard PMBFJ175 FET
TMPFJ176 Standard PMBFJ176 FET
TMPFJ177 Standard PMBFJ177 FET
TPR400 Microsemi BLAH0912-500 Microwave
TPR500 Microsemi BLA6H0912-501 Microwave
TPR500A Microsemi BLA6H0912-502 Microwave
TSDF54040 Vishay BF1102 FET
TSDF54040-GS08 Vishay BF1102 FET
TSDF54040X-GS08 Vishay BF1102 FET
TSDF54040XR-GS08 Vishay BF1102R FET
UF2805B M/A- COM BLF871 Broadcast
UF28100H M/A- COM BLF871 Broadcast
UF28100M M/A- COM BLF871 Broadcast
UF28100V M/A- COM BLF871 Broadcast
UF2810P M/A- COM BLF871 Broadcast
UF28150J M/A- COM BLF881 Broadcast
UF2815B M/A- COM BLF871 Broadcast
UF2820P M/A- COM BLF871 Broadcast
UF2820R M/A- COM BLF871 Broadcast
UF2840G M/A- COM BLF881 Broadcast
UF2840P M/A- COM BLF881 Broadcast
UMIL100 Microsemi BLF871 Broadcast
UMIL100A Microsemi BLF871 Broadcast
UMIL60 Microsemi BLF878 Broadcast
UMIL80 Microsemi BLF878 Broadcast
uPC2709 NEC BGA2709 MMIC
uPC2711 NEC BGA2711 MMIC
uPC2712 NEC BGA2712 MMIC
uPC2745 NEC BGA2001 MMIC
uPC2746 NEC BGA2001 MMIC
uPC2748 NEC BGA2748 MMIC
uPC2771 NEC BGA2771 MMIC
uPC8112 NEC BGA2022 MMIC
UTV200 Microsemi BLF571 Broadcast
UTV8100B Microsemi BLF645 Broadcast
VAM80 Microsemi BLF878 Broadcast
VMIL100 Microsemi BLF645 Broadcast
VRF148A Microsemi BLF881 Broadcast
VRF150 Microsemi BLF177 Broadcast
VRF151 Microsemi BLF177 Broadcast
VRF151G Microsemi BLF878 Broadcast
98 NXP Semiconductors RF Manual 14th edition
NXP discontinued type Product family NXP Replacement type NXP
BA277-01 BS diode BA277
BA792 BS diode BA591
BAP142L PIN diode BAP142LX
BAP51-01 PIN diode BAP51LX
BAP51L PIN diode BAP51LX
BAP55L PIN diode BAP55LX
BB132 Varicap BB152
BB145 Varicap BB145B
BB145B-01 Varicap BB145B
BB151 Varicap BB135
BB157 Varicap BB187
BB178L Varicap BB178LX
BB179BL Varicap BB179BLX
BB179L Varicap BB179LX
BB181L Varicap BB181LX
BB182B Varicap BB182
BB182L Varicap BB182LX
BB187L Varicap BB187LX
BB190 Varicap BB149
BB202L Varicap BB202LX
BB804 Varicap BB207
BBY42 Varicap BBY40
BF1203 FET BF1203
BF689K WB trs BFS17
BF763 WB trs BFS17
BF851A FET BF861A
BF851A FET BF861A
BF851C FET BF861C
BF851C FET BF861C
BF992/01 FET BF992
BFC505 WB trs BFM505
BFC520 WB trs BFM520
BFET505 WB trs BFM505
BFET520 WB trs BFM520
BFG17A WB trs BFS17A
BFG197 WB trs BFG198
BFG197/X WB trs BFG198
BFG25AW/XR WB trs BFG25AW/X
BFG410W/CA WB trs BFG410W
BFG425W/CA WB trs BFG425W
BFG425W/CA WB trs BFG425W
BFG505/XR WB trs BFG505/X
BFG505W/XR WB trs BFG505
BFG520W/XR WB trs BFG520W/X
BFG590/XR WB trs BFG590/X
BFG590W WB trs BFG590
BFG590W/XR WB trs BFG590
BFG67/XR WB trs BFG67
BFG92A WB trs BFG92A/X
BFG92A/XR WB trs BFG92A/X
BFG93A/XR WB trs BFG93A/X
BFQ34/01 WB trs BFG35
BFR92 WB trs BFR92A
BFR92AR WB trs BFR92A
BFR92AT WB trs BFR92AW
BFR93 WB trs BFR92A
BFR93AT WB trs BFR93AW
NXP discontinued type Product family NXP Replacement type NXP
BFR93R WB trs BFR93A
BFU510 WB trs BFU725F/N1
BFU540 WB trs BFU725F/N1
BGA2031 WB trs BGA2031/1
BGD102/02 CATV BGD502
BGD102/04 CATV BGD502
BGD104 CATV BGD704
BGD104/04 CATV BGD704
BGD502/01 CATV BGD502
BGD502/01 CATV BGD502
BGD502/01 CATV BGD502
BGD502/01 CATV BGD502
BGD502/03 CATV BGD502
BGD502/03 CATV BGD502
BGD502/05 CATV BGD502
BGD502/07 CATV BGD502
BGD502/6M CATV BGD702
BGD502/C7 CATV BGD502
BGD502/R CATV BGD502
BGD504 CATV BGD704
BGD504/01 CATV BGD704
BGD504/02 CATV BGD704
BGD504/09 CATV BGD704
BGD602 CATV BGD702
BGD602/02 CATV BGD702
BGD602/07 CATV BGD702
BGD602/09 CATV BGD702
BGD602/14 CATV BGD702
BGD602D CATV BGD712
BGD702D CATV BGD712
BGD702D/08 CATV BGD712
BGD704/01 CATV BGD704
BGD704/07S CATV BGD704
BGD704/S9 CATV BGD704
BGD704N CATV BGD714
BGD802/09 CATV BGD802
BGD802N CATV BGD812
BGD802N CATV BGD812
BGD802N/07 CATV BGD812
BGD802N/07 CATV BGD812
BGD804N CATV BGD814
BGD804N CATV BGD814
BGD804N/02 CATV BGD814
BGD804N/02 CATV BGD814
BGD902 CATV BGD812
BGD902/07 CATV BGD902
BGD902L CATV BGD812
BGD904 CATV BGD814
BGD904/02 CATV BGD904
BGD904/07 CATV BGD904
BGD904L CATV BGD814
BGD906 CATV CGD942C
BGD906/02 CATV BGD906
BGE847BO CATV BGO827
BGE847BO CATV BGO827
BGE847BO CATV BGO827
BGE847BO/FC CATV BGO827/SC0
5.2 Cross-references: NXP discontinued types versus NXP replacement types
In alphabetical order of manufacturer discontinued type
Abbreviations:
BS diode Band Switch Diode
CATV Community Antenna Television System
FET Field Effect Transistor
Varicap Varicap Diode
WB trs Wideband Transistor
OM Optical Module
99NXP Semiconductors RF Manual 14th edition
NXP discontinued type Product family NXP Replacement type NXP
BGE847BO/FC0 CATV BGO827/SC0
BGE847BO/FC0 CATV BGO827/SC0
BGE847BO/FC1 CATV BGO827/SC0
BGE847BO/SC CATV BGO827/SC0
BGE847BO/SC0 CATV BGO827/SC0
BGE847BO/SC0 CATV BGO827/SC0
BGE887BO CATV BGO827
BGE887BO/FC CATV BGO827/SC0
BGE887BO/FC1 CATV BGO827/SC0
BGE887BO/SC CATV BGO827/SC0
BGO847/01 CATV BGO847
BGO847/01 CATV BGO847
BGO847/FC0 CATV BGO827/SC0
BGO847/FC0 CATV BGO827/SC0
BGO847/FC01 CATV BGO827/SC0
BGO847/FC01 CATV BGO827/SC0
BGO847/SC0 CATV BGO827/SC0
BGQ34/01 WB BFG35
BGU2003 WB trs BGA2003
BGX885/02 CATV BGX885N
BGY1085A/07 CATV BGY1085A
BGY584A CATV BGY585A
BGY585A/01 CATV BGY585A
BGY586 CATV BGY587
BGY586/05 CATV BGY587
BGY587/01 CATV BGY587
BGY587/01 CATV BGY587
BGY587/02 CATV BGY587
BGY587/02 CATV BGY587
BGY587/07 CATV BGY587
BGY587/09 CATV BGY587
BGY587B/01 CATV BGY587B
BGY587B/02 CATV BGY587B
BGY587B/09 CATV BGY587B
BGY588 CATV BGY588N
BGY588/04 CATV BGY588N
BGY66B/04 CATV BGY66B
BGY67/04 CATV BGY67
BGY67/09 CATV BGY67
BGY67/14 CATV BGY67
BGY67/19 CATV BGY67
BGY67A/04 CATV BGY67A
BGY67A/14 CATV BGY67A
BGY68/01 CATV BGY68
BGY685A/07 CATV BGY685A
BGY685AD CATV BGY785A
BGY685AD CATV BGY785A
BGY685AL CATV BGY785A
BGY687/07 CATV BGY687
BGY687/14 CATV BGY687
BGY687B CATV BGE787B
NXP discontinued type Product family NXP Replacement type NXP
BGY687B/02 CATV BGE787B
BGY785A/07 CATV BGY785A
BGY785A/09 CATV BGY785A
BGY785AD CATV BGY785A
BGY785AD/06 CATV BGY785A
BGY785AD/8M CATV BGY885A
BGY785AD/8M CATV BGY885A
BGY787/02 CATV BGY787
BGY787/07 CATV BGY787
BGY787/09 CATV BGY787
BGY847BO CATV BGO827
BGY847BO/SC CATV BGO827/SC0
BGY84A CATV BGY585A
BGY84A/04 CATV BGY585A
BGY84A/05 CATV BGY585A
BGY85 CATV BGY585A
BGY85A CATV BGY585A
BGY85A/04 CATV BGY585A
BGY85A/05 CATV BGY585A
BGY85H/01 CATV BGY585A
BGY86 CATV BGY587
BGY86/05 CATV BGY587
BGY87 CATV BGY587
BGY87/J1 CATV BGY587
BGY87B CATV BGY587B
BGY88 CATV BGY588N
BGY88/04 CATV BGY588N
BGY88/04 CATV BGY588N
BGY88/07 CATV BGY588N
BGY887/02 CATV BGY887
BGY887BO CATV BGO827
BGY887BO/FC CATV BGO827/FC0
BGY887BO/SC CATV BGO827/SC0
CGD914 CATV CGD1042H
CGY887A CATV CGY1043
CGY887B CATV CGY1047
GD923 CATV CGD942C
ON4520/09 CATV BGY687
ON4520/2 CATV BGY687
ON4594/M5 CATV BGY585A
ON4749 CATV BGY588N
ON4749 CATV BGY588N
ON4831-2 CATV BGY885A
ON4869 CATV BGY587
ON4876 CATV BGY1085A
ON4890 CATV BGD712
ON4890 CATV BGD712
ON4990 CATV BGD885
PMBT3640/AT WB trs BFS17
PN4392 FET PMBF4392
PN4393 FET PMBF4393
100 NXP Semiconductors RF Manual 14th edition
6.1 Packing quantities per package with relevant ordering code
6. Packing and packaging information
Package Package dimensions
L x W x H
Packing
quantity
Product
12NC ending
Packing
method
SOD323/SC-76 1.7 x 1.25 x 0.9 3,000 115 8 mm tape and reel
10,000 135 8 mm tape and reel
SOD523/SC-79 1.2 x 0.8 x 0.6
3,000 115 8 mm tape and reel
10,000 135 8 mm tape and reel
8,000 315 2 mm pitch tape and reel
20,000 335 2 mm pitch tape and reel
SOD882T 1.0 x 0.6 x 0.4 15,000 315 8 mm tape and reel
SOT23 2.9 x 1.3 x 0.9 3,000 215 8 mm tape and reel
10,000 235 8 mm tape and reel
SOT54 4.6 x 3.9 x 5.1
5,000 112 bulk, delta pinning
5,000 412 bulk, straight leads
10,000 116 tape and reel, wide pitch
10,000 126 tape ammopack, wide pitch
SOT89/SC-62 4.5 x 2.5 x 1.5 1,000 115 12 mm tape and reel
4,000 135 12 mm tape and reel
SOT115 44.5 x 13.65 x 20.4 100 112 4 tray/box
SOT121B 28.45 x 28.45 x 7.27 20 112 blister, tray
SOT143(N/R) 2.9 x 1.3 x 0.9 3,000 215 8 mm tape and reel
10,000 235 8 mm tape and reel
SOT223/SC-73 6.7 x 3.5 x 1.6 1,000 115 12 mm tape and reel
4,000 135 12 mm tape and reel
SOT307 10 x 10 x 1.75
1,500 518 13" tape and reel dry pack
96 551 1 tray dry pack
480 557 5 tray dry pack
SOT323/SC-70 2.0 x 1.25 x 0.9 3,000 115 8 mm tape and reel
10,000 135 8 mm tape and reel
SOT341 5.3 x 10.2 1,000 118 13'' tape and reel
658 112 tube
SOT343(N/R) 2.0 x 1.25 x 0.9 3,000 115 8 mm tape and reel
10,000 135 8 mm tape and reel
SOT343F 2.1 x 1.25 x 0.7 3,000 115 8 mm tape and reel
SOT360 6.5 x 4.4 x 0.9 2,500 118 16 mm tape and reel
SOT363/SC-88 2.0 x 1.25 x 0.9 3,000 115 8 mm tape and reel
10,000 135 8 mm tape and reel
SOT401 5 x 5 x 1.4 2,000 118 13" tape and reel
360 151 1 tray
SOT403 5.0 x 4.4 x 0.9 2,500 118 12 mm tape and reel
SOT416/SC-75 1.6 x 0.8 x 0.75 3,000 115 8 mm tape and reel
SOT467B 9.78 x 18.29 x 4.67 60 112 blister, tray
20 112 blister, tray
SOT467C 20.45 x 18.54 x 4.67 60 112 blister, tray
20 112 blister, tray
SOT502A 19.8 x 9.4 x 4.1 60 112 blister, tray
300 135 reel
SOT502B 19.8 x 9.4 x 4.1 60 112 blister, tray
100 118 reel
101NXP Semiconductors RF Manual 14th edition
Package Package dimensions
L x W x H
Packing
quantity
Product
12NC ending
Packing
method
SOT538A 5.1 x 4.1 x 2.6 160 112 blister, tray
SOT539A 31.25 x 9.4 x 4.65 60 112 blister, tray
300 135 reel
SOT540A 21.85 x 10.2 x 5.4 60 112 blister, tray
SOT608A 10.1 x 10.1 x 4.2
60 112 blister, tray
60 112 blister, tray
300 135 reel
SOT608B 10.1 x 10.1 x 4.2
60 112 blister, tray
100 118 reel
300 135 reel
SOT616 4.0 x 4.0 x 0.85
6,000 118 12 mm tape and reel
1,500 115 8 mm tape and reel
100 551 tray
SOT617 5 x 5 x 0.85 6,000 118 Tape and reel
SOT618 6 x 6 x 0.85
4,000 118 13" tape and reel
1,000 515 7" tape and reel dry pack
490 551 1 tray dry pack
2,450 157 5 tray
SOT638 14 x 14 x 1
1,000 518 13" tape and reel dry pack
90 551 1 tray dry pack
450 557 5 tray dry pack
SOT666 1.6 x 1.2 x 0.7 4,000 115 8 mm tape and reel
SOT684 8 x 8 x 0.85
1,000 518 13" tape and reel dry pack
260 151 1 tray
260 551 1 tray dry pack
1,300 157 5 tray dry pack
SOT724 8.7 x 3.9 x 1.47 2,500 118 16 mm tape and reel
SOT753 2.9 x 1.5 x 1.0 3,000 125 8 mm tape and reel
SOT778 6.0 x 6.0 x 0.85 490 551 tray
4,000 518 multiple trays
SOT822-1 15.9 x 11 x 3.6 180 127 tube
SOT834-1 15.9 x 11 x 3.15 180 127 tube
SOT886 1.45 x 1.0 x 0.5 5000 115 8 mm tape and reel
SOT891 1.0 x 1.0 x 0.5 5000 132 8 mm tape and reel
SOT908 3.0 x 3.0 x 0.85 6000 118 12 mm tape and reel
SOT922-1 17.4 x 9.4 x 3.88 60 112 blister, tray
SOT975B 6.5 x 6.5 x 3.3 180 112 blister, tray
100 118 Tape and reel
SOT975C 6.5 x 6.5 x 3.3 180 112 blister, tray
100 118 Tape and reel
SOT979A 31.25 x 10.2 x 5.3 60 112 blister, tray
SOT1110A 41.28 x 17.12 x 5.36 60 112 blister, tray
100 118 reel
SOT1121A 34.16 x 19.94 x 4.75 60 112 blister, tray
100 118 reel
SOT1121B 20.70 x 19.94 x 4.75 60 112 blister,tray
100 118 reel
SOT1130A 20.45 x 17.12 x 4.65 60 112 blister, tray
SOT1130B 9.91 x 17.12 x 4.65 60 112 blister, tray
SOT1135A 20.45 x 19.94 x 4.65 60 112 blister, tray
100 118 reel
102 NXP Semiconductors RF Manual 14th edition
Marking code Type Package
10% BAT18 SOT23
13% BB207 SOT23
20% BF545A SOT23
21% BF545B SOT23
22% BF545C SOT23
24% BF556A SOT23
25% BF556B SOT23
26% BF556C SOT23
28% BF861A SOT23
29% BF861B SOT23
30% BF861C SOT23
31% BFR505 SOT23
32% BFR520 SOT23
33% BFR540 SOT23
34% BFT25A SOT23
38% PMBFJ108 SOT23
39% PMBFJ109 SOT23
40% PMBFJ110 SOT23
41% PMBFJ111 SOT23
42% PMBFJ112 SOT23
47% PMBFJ113 SOT23
48% PMBFJ308 SOT23
49% PMBFJ309 SOT23
50% PMBFJ310 SOT23
1 BA277 SOD523
2 BB182 SOD523
7 BA891 SOD523
8 BB178 SOD523
9 BB179 SOD523
%1W BAP51-05W SOT323
%3A BGA6289 SOT89
%4A BGA6489 SOT89
%5A BGA6589 SOT89
%6G PMBF4393 SOT23
%6J PMBF4391 SOT23
%6K BGA7024 SOT89
%6K PMBF4392 SOT23
%6L BGA7027 SOT89
%6S PMBFJ176 SOT23
%6W PMBFJ175 SOT23
%6X PMBFJ174 SOT23
%6Y PMBFJ177 SOT23
%AB BF1210 SOT363
%E7 BGA2800 SOT363
%E8 BGA2801 SOT363
%E9 BGA2815 SOT363
%EA BGA2816 SOT363
%EB BGA2850 SOT363
%EC BGA2865 SOT363
%ED BGA2866 SOT363
%M1 BF908 SOT143
%M2 BF908R SOT143
%M3 BF909 SOT143
%M4 BF909R SOT143
%M5 BF909A SOT143
%M6 BF909AR SOT143
Marking code Type Package
%M7 BF904A SOT143
%M8 BF904AR SOT143
%M9 BSS83 SOT143
%MA BF991 SOT143
%MB BF992 SOT143
%MC BF904 SOT143
%MD BF904R SOT143
%ME BFG505 SOT143
%MF BFG520 SOT143
%MG BFG540 SOT143
%MH BFG590 SOT143
%MK BFG505/X SOT143
%ML BFG520/X SOT143
%MM BFG540/X SOT143
%MN BFG590/X SOT143
%MP BFG520/XR SOT143
%MR BFG540/XR SOT143
%MS BFG10 SOT143
%MT BFG10/X SOT143
%MU BFG25A/X SOT143
%MV BFG67/X SOT143
%MW BFG92A/X SOT143
%MX BFG93A/X SOT143
%MY BF1100 SOT143
%MZ BF1100R SOT143
1B% BGA2717 SOT363
1C% BAP50-05 SOT23
1N% BAP70-04W SOT323
2A% BF862 SOT23
2L BF1208 SOT666
2N BF1206F SOT666
2R BF1207F SOT666
4A BF1208D SOT666
4K% BAP64-04 SOT23
4L% BAP50-04 SOT23
4W% BAP64-04W SOT323
5K% BAP64-05 SOT23
5W% BAP64-05W SOT323
6F% BAP1321-04 SOT23
6K% BAP64-06 SOT23
6W% BAP50-04W SOT323
7K% BAP65-05 SOT23
8K% BAP70-05 SOT23
A1 BA591 SOD323
A1 BB208-02 SOD523
A1 BGA2001 SOT343
A1 BAP64Q SOT753
A2 BAP70Q SOT753
A2 BAT18 SOT23
A2 BB184 SOD523
A2 BB208-03 SOD323
A2% BGA2022 SOT363
A3 BAP64-03 SOD323
A3 BB198 SOD523
A3 BGA2003 SOT343
A3% BGA2031/1 SOT363
Marking code Type Package
A5 BAP51-03 SOD323
A5% BGA2011 SOT363
A6% BGA2012 SOT363
A7% BFG310W/XR SOT343
A8 BAP50-03 SOD323
A8% BFG325W/XR SOT343
A8% PMBFJ620 SOT363
A9 BAP70-03 SOD323
AC BGU7005 SOT886
B3 BGU7003 SOT891
B6- BGA2715 SOT363
B6% BFU725F SOT343F
B7% BGA2716 SOT363
BC% BFQ591 SOT89
BFG135 BFG135 SOT223
BFG198 BFG198 SOT223
BFG31 BFG31 SOT223
BFG35 BFG35 SOT223
BFG541 BFG541 SOT223
BFG591 BFG591 SOT223
BFG94 BFG94 SOT223
BFG97 BFG97 SOT223
BLT50 BLT50 SOT223
BLT70 BLT70 SOT223
BLT80 BLT80 SOT223
BLT81 BLT81 SOT223
C1% BGM1011 SOT363
C2% BGM1012 SOT363
C4% BGM1013 SOT363
C5% BGM1014 SOT363
D1 BFU610F SOT343F
D2 BFU630F SOT343F
D2 BAP63-03 SOD323
D3 BFU660F SOT343F
D3 BAP65-03 SOD323
D4 BFU690F SOT343F
D4% BFR30/B SOT23
D5 BFU710F SOT343F
D6 BFU730F SOT343F
D7 BFU760F SOT343F
D8 BFU790F SOT343F
E1% BFS17 SOT23
E1% BFS17/FD SOT23
E1% BFS17W SOT323
E2% BFS17A SOT23
E2% BGA2712 SOT363
E3% BGA2709 SOT363
E6% BFG17A SOT23
FB BFQ19 SOT89
FF BFQ18A SOT89
FG BFQ149 SOT89
G2 BA278 SOD523
G2% BGA2711 SOT363
G3% BGA2748 SOT363
G4% BGA2771 SOT363
G5% BGA2776 SOT363
6.2 Marking codes list
Search online on marking code: http://www.nxp.com/package/
In alphabetical order of marking code
In case a ‘%’ is given in the marking code, it means this type can be assembled at different assembly sites.
Instead of a ‘%’, you will find:
p = made in Hong-Kong
t = made in Malaysia
W = made in China
103NXP Semiconductors RF Manual 14th edition
Marking code Type Package
K1 BAP51-02 SOD523
K2 BAP51-05W SOD523
K4 BAP50-02 SOD523
K5 BAP63-02 SOD523
K6 BAP65-02 SOD523
K7 BAP1321-02 SOD523
K8 BAP70-02 SOD523
K9 BB199 SOD523
L1 BB202LX SOD882T
L2 BAP51LX SOD882T
L2 BB202 SOD523
L2% BF1203 SOT363
L3 BB178LX SOD882T
L3% BF1204 SOT363
L4 BB179LX SOD882T
L4% BF1205 SOT363
L5 BB179BLX SOD882T
L6 BB181LX SOD882T
L6% BF1206 SOT363
L7 BB182LX SOD882T
L8 BB187LX SOD882T
L9% BF1208 SOT363
LA BF1201WR SOT343
LA% BF1201 SOT143
LB% BF1201R SOT143
LD% BF1202 SOT143
LE BF1202WR SOT343
LE% BF1202R SOT143
LF% BF1211 SOT143
LG% BF1212 SOT143
LH% BF1211R SOT143
LK% BF1212R SOT143
M08 PMBFJ308 SOT23
M09 PMBFJ309 SOT23
M1% BFR30 SOT23
M10 PMBFJ310 SOT23
M2% BF1207 SOT363
M2% BFR31 SOT23
M3% BFT46 SOT23
M33 BF861A SOT23
M34 BF861B SOT23
M35 BF861C SOT23
M4% BF1215 SOT363
M5% BF1216 SOT363
M6% BF1205C SOT363
M65 BF545A SOT23
M66 BF545B SOT23
M67 BF545C SOT23
M7% BF1218 SOT363
M84 BF556A SOT23
M85 BF556B SOT23
M86 BF556C SOT23
MB BF998WR SOT343
MC BF904WR SOT343
MD BF908WR SOT343
Marking code Type Package
ME BF909WR SOT343
MF BF1100WR SOT343
MG BF909AWR SOT343
MG% BF994S SOT143
MH BF904AWR SOT343
MH% BF996S SOT143
MK BF1211WR SOT343
ML BF1212WR SOT343
MO% BF998 SOT143
MO% BF998R SOT143
N BB181 SOD523
N0 BFR505T SOT416
N0% BFM505 SOT363
N0% BFS505 SOT323
N1 BFG505W/X SOT343
N2 BFR520T SOT416
N2% BFM520 SOT363
N2% BFS520 SOT323
N3 BFG520W SOT343
N4 BFG520W/X SOT343
N4 BFQ540 SOT89
N4% BFS540 SOT323
N6% BFS25A SOT323
N7 BFG540W/X SOT343
N8 BFG540W/XR SOT343
N9 BFG540W SOT343
N9% BAP70AM SOT363
NA BF1105WR SOT343
NA% BF1105R SOT143
NB BF1109WR SOT343
NB% BF1109R SOT143
NC BF1101WR SOT343
NC% BF1101R SOT143
ND BFG424W SOT343
ND% BF1101 SOT143
NE BFG424F SOT343
NE% BF1105 SOT143
NF% BF1109 SOT143
NG% BF1108 SOT143
NH% BF1108R SOT143
P08 PMBFJ108 SOT23
P09 PMBFJ109 SOT23
P1 BFG21W SOT343
P1 BB131 SOD323
P10 PMBFJ110 SOT23
P11 PMBFJ111 SOT23
P12 PMBFJ112 SOT23
P13 PMBFJ113 SOT23
P2% BFR92A SOT23
P2% BFR92AW SOT323
P3 BFG403W SOT343
P4 BFG410W SOT343
P5 BB135 SOD323
P5 BFG425W SOT343
P6 BFG480W SOT343
Marking code Type Package
P7 BB147 SOD523
P8 BB148 SOD323
P9 BB149 SOD323
PB BB152 SOD323
PC BB153 SOD323
PE BB155 SOD323
PF BB156 SOD323
PL BB149A SOD323
R2% BFR93A SOT23
R2% BFR93AW SOT323
R5 BFR93AR SOT23
R7% BFR106 SOT23
R8% BFG93A SOT143
S BAP64-02 SOD523
S1% BFG310/XR SOT143
S2% BBY40 SOT23
S2% BFG325/XR SOT143
S3% BF1107 SOT23
S6% BF510 SOT23
S7% BF511 SOT23
S8% BF512 SOT23
S9% BF513 SOT23
SB% BF1214 SOT363
SC% BGU7031 SOT363
SC% BB201 SOT23
SD% BGU7032 SOT363
SE% BGU7033 SOT363
T5 BFG10W/X SOT343
V1 BFG25AW/X SOT343
V1% BFT25 SOT23
V10 BFT25A SOT23
V2% BFQ67 SOT23
V2% BFQ67W SOT323
V3% BFG67 SOT143
V4% BAP64-06W SOT323
V6% BAP65-05W SOT323
V8 BAP1321-03 SOD323
VA BF1217WR SOT343
VB BF1118W SOT343
VC BF1118WR SOT343
VC% BF1118 SOT143
VD% BF1118R SOT143
W1 BF1102 SOT363
W1% BFT92 SOT23
W1% BFT92W SOT323
W2% BF1102R SOT363
W4% BAP50-05W SOT323
W6% BAP51-04W SOT323
W7% BAP51-06W SOT323
W9% BAP63-05W SOT323
X BB187 SOD523
X1% BFT93 SOT23
X1% BFT93W SOT323
104 NXP Semiconductors RF Manual 14th edition
7. Abbreviations
3-way Doherty design using 3 discrete transistors
AM Amplitude Modulation
ASIC Application Specific Integrated Circuit
ASYM Asymmetrical design of Doherty (main and
peak device are different)
BPF Band Pass Filter
BUC Block Up Converter
CATV Community Antenna Television
CDMA Code Division Multiple Access
CMMB Chinese Multimedia Mobile Broadcasting
CMOS Complementary Metal Oxide Semiconductor
CQS Customer Qualification Samples
DAB Digital Audio Broadcasting
DECT Digital Enhanced Cordless
Telecommunications
DiSEqC Digital Satellite Equipment Control
DSB Digital Signal Processor
DVB Digital Video Broadcasting
EDGE Enhanced Data Rates for GSM Evolution
ESD Electro Static Device
FET Field Effect Transistor
FM Frequency Modulation
GaAs Gallium Arsenide
GaN Gallium Nitride
Gen Generation
GPS Global Positioning System
GSM Global System for Mobile communications
HBT Heterojunction Bipolar Transistor
HDTV High Definition Television
HF High Frequency (3-30 MHz)
HFC Hybrid Fiber Coax
HFET Heterostructure Field Effect Transistor
HPA High Power Amplifier
HVQFN Plastic thermally enHanced Very thin Quad
Flat pack No leads
IF Intermediate Frequency
ISM Industrial, Scientific, Medical - reserved
frequency bands
LDMOS Laterally Diffused Metal-Oxide-Semiconductor
LNA Low Noise Amplifier
LNB Low Noise Block
LO Local Oscillator
LPF Low Pass Filter
MESFET Metal Semiconductor Field Effect Transistor
MMIC Monolithic Microwave Integrated Circuit
MMPP Main and peak devices realized separately in
halves of push pull transistor
MPPM Main and peak device realized in same push
pull transistor (2 times)
MoCA Multimedia over Coax Alliance
MOSFET Metal–Oxide–Semiconductor Field Effect
Transistor
MPA Medium Power Amplifier
MRI Magnetic resonance imaging
NF Noise Figure
NIM Network Interface Module
NMR Nuclear magnetic resonance
PA Power Amplifier
PAR Peak to Average Ratio
PEP Peak Envelope Power
pHEMT pseudomorphic High Electron Mobility
Transistor
PLL Phase Locked Loop
QUBiC Quality BiCMOS
RF Radio Frequency
RFS Release for Supply
RoHS Restriction of Hazardous Substances
RX Receive
SARFT State Administration for Radio, Film and
Television
SER Serializer
SiGe:C Sillicon Germanium Carbon
SMATV Satellite Master Antenna Television
SMD Surface Mounted Device
SPDT Single Pole, Double Throw
SYM Symmetrical design of Doherty (main and peak
device are the same type of transistor)
TD-SCDMA Time Division-Synchronous Code Division
Multiple Access
TCAS Traffic Collision Avoidance Systems
TMA Tower Mounted Amplifier
TTFF Time to first fix
TX Transmit
UHF Ultra High Frequency (470-860MHz)
UMTS Universal Mobile Telecommunications System
VCO Voltage Controlled Oscillator
VGA Variable Gain Amplifier
VHF Very High Frequency (30-300MHz)
VoIP Voice over Internet Protocol
VSAT Very Small Aperture Terminal
WCDMA Wideband Code Division Multiple Access
WiMAX Worldwide Interoperability for Microwave
Access
WLAN Wireless Local Area Network
105NXP Semiconductors RF Manual 14th edition
8. Contacts and web links
Authorized distributors
Asia Pacific:
http://www.nxp.com/profile/sales/asia_pacific_dist
Europe / Africa / Middle East:
http://www.nxp.com/profile/sales/europe_dist
North America:
http://www.nxp.com/profile/sales/northamerica_dist
South America:
http://www.nxp.com/profile/sales/southamerica_dist
Local NXP Offices
Asia Pacific:
http://www.nxp.com/profile/sales/asia_pacific
Europe / Africa / Middle East:
http://www.nxp.com/profile/sales/europe
North America:
http://www.nxp.com/profile/sales/northamerica
South America:
http://www.nxp.com/profile/sales/southamerica
Web links
NXP Semiconductors:
http://www.nxp.com
NXP RF Manual web page:
http://www.nxp.com/rfmanual
NXP varicaps:
http://www.nxp.com/varicaps
NXP RF PIN diodes:
http://www.nxp.com/pindiodes
NXP RF Schottky diodes:
http://www.nxp.com/rfschottkydiodes
NXP RF MMICs:
http://www.nxp.com/mmics
NXP RF wideband transistors:
http://www.nxp.com/rftransistors
NXP RF power & base stations:
http://www.nxp.com/rfpower
NXP RF FETs:
http://www.nxp.com/rffets
NXP RF CATV electrical & optical:
http://www.nxp.com/catv
NXP RF applications:
http://www.nxp.com/rf
NXP application notes:
http://www.nxp.com/all_appnotes
NXP cross-references:
http://www.nxp.com/products/xref
NXP green packaging:
http://www.nxp.com/green_roadmap
NXP end-of-life:
http://www.nxp.com/products/eol
NXP Quality Handbook:
http://www.standardics.nxp.com/quality/handbook
NXP literature:
http://www.nxp.com/products/discretes/documentation
NXP packaging:
http://www.nxp.com/package
NXP sales offices and distributors:
http://www.nxp.com/profile/sales
NXP High Speed Converters
http://www.nxp.com/dataconverters
How to contact your authorized distributor or local NXP representative?
106 NXP Semiconductors RF Manual 14th edition
Type Portfolio
chapter
ADC1006S series 3.8.1
ADC1010S series 3.8.1
ADC1015S series 3.8.1
ADC1113D125 3.8.1
ADC1115S125 3.8.1
ADC1206S series 3.8.1
ADC1207S080 3.8.1
ADC1210S series 3.8.1
ADC1212D series 3.8.1
ADC1213D series 3.8.1
ADC1215S series 3.8.1
ADC1410S series 3.8.1
ADC1412D series 3.8.1
ADC1413D series 3.8.1
ADC1415S series 3.8.1
ADC1610S series 3.8.1
ADC1613D series 3.8.1
BA277 3.2.1
BA591 3.2.1
BA792 3.2.1
BA891 3.2.1
BAP1321-02 3.2.2
BAP1321-03 3.2.2
BAP1321-04 3.2.2
BAP1321LX 3.2.2
BAP142LX 3.2.2
BAP50-02 3.2.2
BAP50-03 3.2.2
BAP50-04 3.2.2
BAP50-04W 3.2.2
BAP50-05 3.2.2
BAP50-05W 3.2.2
BAP50LX 3.2.2
BAP51-02 3.2.2
BAP51-03 3.2.2
BAP51-04W 3.2.2
BAP51-05W 3.2.2
BAP51-06W 3.2.2
BAP51LX 3.2.2
BAP55LX 3.2.2
BAP63-02 3.2.2
BAP63-03 3.2.2
BAP63-05W 3.2.2
BAP63LX 3.2.2
BAP64-02 3.2.2
BAP64-03 3.2.2
BAP64-04 3.2.2
BAP64-04W 3.2.2
BAP64-05 3.2.2
BAP64-05W 3.2.2
BAP64-06 3.2.2
BAP64-06W 3.2.2
BAP64LX 3.2.2
BAP64Q 3.2.2
BAP65-02 3.2.2
BAP65-03 3.2.2
BAP65-05 3.2.2
BAP65-05W 3.2.2
BAP65LX 3.2.2
BAP70-02 3.2.2
BAP70-03 3.2.2
BAP70-04W 3.2.2
BAP70-05 3.2.2
BAP70AM 3.2.2
BAP70Q 3.2.2
BAT17 3.2.4
BAT18 3.2.3
BB131 3.2.1
BB135 3.2.1
BB145B 3.2.1
BB148 3.2.1
Type Portfolio
chapter
BB149 3.2.1
BB149A 3.2.1
BB152 3.2.1
BB153 3.2.1
BB156 3.2.1
BB178 3.2.1
BB178LX 3.2.1
BB179 3.2.1
BB179B 3.2.1
BB179BLX 3.2.1
BB179LX 3.2.1
BB181 3.2.1
BB181LX 3.2.1
BB182 3.2.1
BB182LX 3.2.1
BB184 3.2.1
BB184LX 3.2.1
BB185LX 3.2.1
BB187 3.2.1
BB187LX 3.2.1
BB189 3.2.1
BB198 3.2.1
BB199 3.2.1
BB201 3.2.1
BB202 3.2.1
BB202LX 3.2.1
BB207 3.2.1
BB208-02 3.2.1
BB208-03 3.2.1
BBY40 3.2.1
BF1100 3.5.2
BF1100R 3.5.2
BF1100WR 3.5.2
BF1101 3.5.2
BF1101R 3.5.2
BF1101WR 3.5.2
BF1102 3.5.2
BF1105 3.5.2
BF1105R 3.5.2
BF1105WR 3.5.2
BF1107 3.5.2
BF1108 3.5.2
BF1108R 3.5.2
BF1109 3.5.2
BF1109R 3.5.2
BF1109WR 3.5.2
BF1118 3.5.2.
BF1118R 3.5.2.
BF1118W 3.5.2.
BF1118WR 3.5.2.
BF1201 3.5.2
BF1201R 3.5.2
BF1201WR 3.5.2
BF1202 3.5.2
BF1202R 3.5.2
BF1202WR 3.5.2
BF1203 3.5.2
BF1204 3.5.2
BF1205 3.5.2
BF1205C 3.5.2
BF1206 3.5.2
BF1206 3.5.2
BF1207 3.5.2
BF1208 3.5.2
BF1208D 3.5.2
BF1210 3.5.2
BF1211 3.5.2
BF1211R 3.5.2
BF1211WR 3.5.2
BF1212 3.5.2
BF1212R 3.5.2
Type Portfolio
chapter
BF1212WR 3.5.2
BF1214 3.5.2
BF1215 3.5.2.
BF1216 3.5.2.
BF1217 3.5.2.
BF1218 3.5.2.
BF245A 3.5.1
BF245B 3.5.1
BF245C 3.5.1
BF5101) 3.5.1
BF5111) 3.5.1
BF5121) 3.5.1
BF5131) 3.5.1
BF545A 3.5.1
BF545B 3.5.1
BF545C 3.5.1
BF556A 3.5.1
BF556B 3.5.1
BF556C 3.5.1
BF861A 3.5.1
BF861B 3.5.1
BF861C 3.5.1
BF862 3.5.1
BF904 3.5.2
BF904R 3.5.2
BF904WR 3.5.2
BF908 3.5.2
BF908R 3.5.2
BF908WR 3.5.2
BF909 3.5.2
BF909R 3.5.2
BF909WR 3.5.2
BF991 3.5.2
BF992 3.5.2
BF994S 3.5.2
BF996S 3.5.2
BF998 3.5.2
BF998R 3.5.2
BF998WR 3.5.2
BFG10(X) 3.3.1
BFG10W/X 3.3.1
BFG135 3.3.1
BFG198 3.3.1
BFG21W 3.3.1
BFG25A/X 3.3.1
BFG25AW/X 3.3.1
BFG31 3.3.1
BFG310/XR 3.3.1
BFG310W/XR 3.3.1
BFG325/XR 3.3.1
BFG325W/XR 3.3.1
BFG35 3.3.1
BFG403W 3.3.1
BFG410W 3.3.1
BFG424F 3.3.1
BFG424W 3.3.1
BFG425W 3.3.1
BFG480W 3.3.1
BFG505(/X) 3.3.1
BFG505W/X 3.3.1
BFG520(/X) 3.3.1
BFG520W(/X) 3.3.1
BFG540(/X) 3.3.1
BFG540W(/X/XR) 3.3.1
BFG541 3.3.1
BFG590(/X) 3.3.1
BFG591 3.3.1
BFG67(/X) 3.3.1
BFG92A(/X) 3.3.1
BFG93A(/X) 3.3.1
BFG94 3.3.1
Type Portfolio
chapter
BFG97 3.3.1
BFM505 3.3.1
BFM520 3.3.1
BFQ149 3.3.1
BFQ18A 3.3.1
BFQ19 3.3.1
BFQ540 3.3.1
BFQ591 3.3.1
BFQ67 3.3.1
BFQ67W 3.3.1
BFR106 3.3.1
BFR30 3.3.1
BFR31 3.3.1
BFR505 3.3.1
BFR505T 3.3.1
BFR520 3.3.1
BFR520T 3.3.1
BFR540 3.3.1
BFR92A 3.3.1
BFR92AW 3.3.1
BFR93A(R) 3.3.1
BFR93AW 3.3.1
BFS17 3.3.1
BFS17A 3.3.1
BFS17W 3.3.1
BFS25A 3.3.1
BFS505 3.3.1
BFS520 3.3.1
BFS540 3.3.1
BFT25 3.3.1
BFT25A 3.3.1
BFT46 3.3.1
BFT92 3.3.1
BFT92W 3.3.1
BFT93 3.3.1
BFT93W 3.3.1
BFU610F 3.3.1
BFU630F 3.3.1
BFU660F 3.3.1
BFU690F 3.3.1
BFU710F 3.3.1
BFU725F/N1 3.3.1
BFU730F 3.3.1
BFU760F 3.3.1
BFU790F 3.3.1
BGA2001 3.4.1
BGA2003 3.4.1
BGA2011 3.4.1
BGA2012 3.4.1
BGA2022 3.4.1
BGA2031/1 3.4.1
BGA2709 3.4.1
BGA2711 3.4.1
BGA2712 3.4.1
BGA2714 3.4.1
BGA2715 3.4.1
BGA2716 3.4.1
BGA2717 3.4.1
BGA2748 3.4.1
BGA2771 3.4.1
BGA2776 3.4.1
BGA2800 3.4.1
BGA2801 3.4.1
BGA2815 3.4.1
BGA2816 3.4.1
BGA2850 3.4.1
BGA2865 3.4.1
BGA2866 3.4.1
BGA6289 3.4.1
BGA6489 3.4.1
BGA6589 3.4.1
9. Product index
107NXP Semiconductors RF Manual 14th edition
Type Portfolio
chapter
BGA7024 3.4.1
BGA7027 3.4.1
BGA7030 3.4.1
BGA7033 3.4.1
BGA7124 3.4.1
BGA7127 3.4.1
BGA7202 3.4.1
BGA7203 3.4.1
BGA7204 3.4.1
BGA7350 3.4.1
BGA7351 3.4.1
BGD502 3.6.3
BGD702 3.6.3
BGD702N 3.6.3
BGD704 3.6.3
BGD712 3.6.3
BGD712C 3.6.3
BGD714 3.6.3
BGD802 3.6.3
BGD804 3.6.3
BGD812 3.6.3
BGD814 3.6.3
BGD816L 3.6.3
BGD885 3.6.3
BGE787B 3.6.2
BGE788 3.6.2
BGE788C 3.6.2
BGE885 3.6.2
BGM1011 3.4.1
BGM1012 3.4.1
BGM1013 3.4.1
BGM1014 3.4.1
BGO807 3.6.4
BGO807/FC0 3.6.4
BGO807/SC0 3.6.4
BGO807C 3.6.4
BGO807C/FC0 3.6.4
BGO807C/SC0 3.6.4
BGO807CE 3.6.4
BGO827 3.6.4
BGO827/SC0 3.6.4
BGU7003 3.4.1
BGU7005 3.4.1
BGU7006 3.4.1
BGU7007 3.4.1
BGU7031 3.4.1
BGU7032 3.4.1
BGU7033 3.4.1
BGY1085A 3.6.2
BGY585A 3.6.2
BGY587 3.6.2
BGY587B 3.6.2
BGY588C 3.6.2
BGY588N 3.6.2
BGY66B 3.6.1
BGY67 3.6.1
BGY67A 3.6.1
BGY68 3.6.1
BGY685A 3.6.2
BGY687 3.6.2
BGY785A 3.6.2
BGY787 3.6.2
BGY835C 3.6.2
BGY883 3.6.2
BGY885A 3.6.2
BGY887 3.6.2
BGY887B 3.6.2
BGY888 3.6.2
BLA6H0912-500 3.7.3
BLA6H1011-600 3.7.3
BLD6G21L-50 3.7.1
Type Portfolio
chapter
BLD6G21LS-50 3.7.1
BLD6G22L-50 3.7.1
BLD6G22LS-50 3.7.1
BLF571 3.7.2
BLF573 3.7.2
BLF573 3.7.2.1
BLF573S 3.7.2
BLF574 3.7.2
BLF578 3.7.2
BLF645 3.7.2
BLF6G07L(S)-260PBM 3.7.1.1
BLF6G10-135RN 3.7.1
BLF6G10-160RN 3.7.1
BLF6G10-200RN 3.7.1
BLF6G10-45 3.7.1
BLF6G10L(S)-260PRN 3.7.1.1
BLF6G10L(S)-40BRN 3.7.1.1
BLF6G10LS-135RN 3.7.1
BLF6G10LS-160RN 3.7.1
BLF6G10LS-200RN 3.7.1
BLF6G10S-45 3.7.1
BLF6G20-110 3.7.1
BLF6G20-180PN 3.7.1
BLF6G20-180RN 3.7.1
BLF6G20-230PRN 3.7.1
BLF6G20-40 3.7.1
BLF6G20-45 3.7.1
BLF6G20-75 3.7.1
BLF6G20LS-110 3.7.1
BLF6G20LS-140 3.7.1
BLF6G20LS-180RN 3.7.1
BLF6G20LS-75 3.7.1
BLF6G20S-45 3.7.1
BLF6G21-10G 3.7.1
BLF6G22-180PN 3.7.1
BLF6G22-180RN 3.7.1
BLF6G22-45 3.7.1
BLF6G22LS-100 3.7.1
BLF6G22LS-130 3.7.1
BLF6G22LS-180RN 3.7.1
BLF6G22LS-75 3.7.1
BLF6G22S-45 3.7.1
BLF6G27-10 3.7.1
BLF6G27-10G 3.7.1
BLF6G27-135 3.7.1
BLF6G27-45 3.7.1
BLF6G27-75 3.7.1
BLF6G27L(S)-45BN 3.7.1.4
BLF6G27LS-135 3.7.1
BLF6G27LS-75 3.7.1
BLF6G27S-45 3.7.1
BLF6G38-10 3.7.1
BLF6G38-100 3.7.1
BLF6G38-10G 3.7.1
BLF6G38-25 3.7.1
BLF6G38-50 3.7.1
BLF6G38LS-100 3.7.1
BLF6G38LS-50 3.7.1
BLF6G38S-25 3.7.1
BLF7G20L(S)-200 3.7.1.2
BLF7G20L(S)-250P 3.7.1.2
BLF7G20L(S)-300P 3.7.1.2
BLF7G22L-130 3.7.1
BLF7G22L(S)-250P 3.7.1.3
BLF7G22LS-130 3.7.1
BLF7G24L(S)-100(G) 3.7.1.4
BLF7G27L-200P 3.7.1
BLF7G27L(S)-100 3.7.1.4
BLF7G27L(S)-140 3.7.1.4
BLF7G27L(S)-75P 3.7.1.4
BLF7G27LS-200P 3.7.1
Type Portfolio
chapter
BLF871 3.7.2
BLF871S 3.7.2
BLF878 3.7.2
BLF881 3.7.2
BLF888 3.7.2
BLF888A(S) 3.7.2
BLL6H0514-25 3.7.3
BLL6H1214-500 3.7.3
BLM6G10-30 3.7.1
BLM6G10-30G 3.7.1
BLM6G22-30 3.7.1
BLM6G22-30G 3.7.1
BLS6G2731-120 3.7.3
BLS6G2731-6G 3.7.3
BLS6G2731S-120 3.7.3
BLS6G2933P-200 3.7.3
BLS6G2933S-130 3.7.3
BLS6G3135-120 3.7.3
BLS6G3135-20 3.7.3
BLS6G3135S-120 3.7.3
BLS6G3135S-20 3.7.3
BLS7G2729-300P 3.7.3
BLS7G2729S-300 3.7.3
BLT50 3.3.1
BLT70 3.3.1
BLT80 3.3.1
BLT81 3.3.1
BSR56 3.5.1
BSR57 3.5.1
BSR58 3.5.1
BSS83 3.5.2
CGD1040Hi 3.6.3
CGD1042H 3.6.3
CGD1042Hi 3.6.3
CGD1044H 3.6.3
CGD1044Hi 3.6.3
CGD1046Hi 3.6.3
CGD914 3.6.3
CGD923 3.6.3
CGD942C 3.6.3
CGD944C 3.6.3
CGY1032 3.6.2
CGY1041 3.6.2
CGY1043 3.6.2
CGY1049 3.6.2
CGY887A 3.6.2
CGY887B 3.6.2
CGY888C 3.6.2
DAC1001D125 3.8.2
DAC1003D160 3.8.2
DAC1005D series 3.8.2
DAC1008D series 3.8.2
DAC1201D125 3.8.2
DAC1203D160 3.8.2
DAC1205D series 3.8.2
DAC1208D series 3.8.2
DAC1401D125 3.8.2
DAC1403D160 3.8.2
DAC1405D series 3.8.2
DAC1408D series 3.8.2
J108 3.5.1
J109 3.5.1
J110 3.5.1
J111 3.5.1
J112 3.5.1
J113 3.5.1
J174 3.5.1
J175 3.5.1
J176 3.5.1
J177 3.5.1
OM7650 3.6.2
Type Portfolio
chapter
OM7670 3.6.2
PBR941 3.3.1
PBR951 3.3.1
PMBD353 3.2.4
PMBD354 3.2.4
PMBF4391 3.5.1
PMBF4392 3.5.1
PMBF4393 3.5.1
PMBFJ108 3.5.1
PMBFJ109 3.5.1
PMBFJ110 3.5.1
PMBFJ111 3.5.1
PMBFJ112 3.5.1
PMBFJ113 3.5.1
PMBFJ174 3.5.1
PMBFJ175 3.5.1
PMBFJ176 3.5.1
PMBFJ177 3.5.1
PMBFJ308 3.5.1
PMBFJ309 3.5.1
PMBFJ310 3.5.1
PMBFJ620 3.5.1
PRF947 3.3.1
PRF949 3.3.1
PRF957 3.3.1
TFF1003HN 3.4.2
TFF1007HN 3.4.2
TFF11070HN 3.4.2
TFF11073HN 3.4.2
TFF11077HN 3.4.2
TFF11080HN 3.4.2
TFF11084HN 3.4.2
TFF11088HN 3.4.2
TFF11092HN 3.4.2
TFF11096HN 3.4.2
TFF11101HN 3.4.2
TFF11105HN 3.4.2
TFF11110HN 3.4.2
TFF11115HN 3.4.2
TFF11121HN 3.4.2
TFF11126HN 3.4.2
TFF11132HN 3.4.2
TFF11139HN 3.4.2
TFF11145HN 3.4.2
TFF11152HN 3.4.2
108 NXP Semiconductors RF Manual 14th edition
Notes
109NXP Semiconductors RF Manual 14th edition
Notes
110 NXP Semiconductors RF Manual 14th edition
Notes
Application and design manual
for High Performance RF products
May 2010
Date of release: May 2010
Document order number: 9397 750 16881
Printed in the Netherlands
© 2010 NXP B.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner. The information presented in this document does not form part of any quotation or contract,
is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
RF Manual 14th edition
RF Manual 14th edition