©2001 Fairchild Semiconductor Corporation HGT1S14N37G3VLS, HGTP14N37G3VL Rev. A
File Number
4857
HGT1S14N37G3VLS, HGTP14N37G3VL
14A, 370V N-Channel, Logic Level, Voltage
Clamping IGBTs
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in
automotive ignition circuits. Unique features include an
active voltage clamp between the collector and the gate
which provides Self Clamped Inductive Switching (SCIS)
capability in ignition circuits. Internal diodes provide ESD
protection for the logic level gate. Both a series resistor and
a shunt resister are provided in the gate circuit.
Formerly Developmental Type TA49169.
Symbol
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
•T
J
= 175
o
C
• Internal Series and Shunt Gate Resistors
• Low Conduction Loss
• Ignition Energy Capable
Packaging
JEDEC TO-263AB
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
HGT1S14N37G3VLS TO-263AB 14N37GVL
HGTP14N37G3VL TO-220AB 14N37GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e. HGT1S14N37G3VLS9A
EMITTER
GATE
R2
R1
COLLECTOR
COLLECTOR
(FLANGE)
E
G
C
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet July 2000
©2001 Fairchild Semiconductor Corporation HGT1S14N37G3VLS, HGTP14N37G3VL Rev. A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGT1S14N37G3VLS,
HGTP14N37G3VL UNITS
Collector to Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CER
380 V
Emitter to Collector Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
ECS
24 V
Collector Current Continuous at V
GE
= 5V, T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
25 A
at V
GE
= 5V, T
C
= 110
o
C. . . . . . . . . . . . . . . . . . . . . . . . . I
C110
18 A
Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
±
10 V
Inductive Switching Current at L = 3mH, T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SCIS
15 A
at L = 3mH, T
C
= 150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SCIS
11.5 A
Collector to Emitter Avalanche Energy at L = 3 mH, T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . E
AS
340 mJ
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
136 W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.91 W/
o
C
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
-55 to 175
o
C
Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
-55 to 175
o
C
Electrostatic Voltage HBM at 250pF, 1500
Ω
All Pin Configurations. . . . . . . . . . . . . . . . . .ESD 5 kV
Electrostatic Voltage MM at 200pF, 0
Ω
All Pin Configurations. . . . . . . . . . . . . . . . . . . . . .ESD 2 kV
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. May be exceeded if I
GEM
is limited to 10mA.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
CER
I
C
= 10mA, R
G
= 1k
Ω,
V
GE
= 0V,
T
J
= -55
o
C to 175
o
C (Figure 16)
320 350 380 V
Gate to Emitter Plateau Voltage V
GEP
I
C
= 6.5A, V
CE
= 12V - 2.76 - V
Gate Charge Q
G(ON)
I
C
= 6.5A, V
CE
= 12V, V
GE
= 5V
(Figure 16)
-27 - nC
Collector to Emitter Clamp Breakdown Voltage BV
CE(CL)
I
C
= 15A, R
G
= 1k
Ω
320 350 380 V
Emitter to Collector Breakdown Voltage BV
ECS
I
C
= 10mA 24 28 - V
Collector to Emitter Leakage Current I
CES
V
CE
= 300V, V
GE
= 0V
(Figure 13)
T
J
= 25
o
C- - 40
µ
A
T
J
= 175
o
C - - 250
µ
A
V
CE
= 250V,
V
GE
= 0V (Figure 13)
T
J
= 25
o
C- - 10
µ
A
T
J
= 175
o
C- - 75
µ
A
Emitter to Collector Leakage Current I
ECS
V
EC
= -24V,
V
GE
= 0V (Figure 13)
T
J
= 25
o
C- - 10 mA
T
J
= 175
o
C- - 50 mA
Collector to Emitter On-State Voltage V
CE(ON)
I
C
= 6A, V
GE
= 4.0V
(Figures 3 through 9)
T
J
= -55
o
C - 1.3 1.45 V
T
J
= 25
o
C - 1.25 1.6 V
I
C
= 10A, V
GE
= 4.5V
(Figures 3 through 9)
T
J
= 25
o
C - 1.45 1.75 V
T
J
= 175
o
C - 1.5 1.9 V
I
C
= 14A, V
GE
= 5V
(Figures 3 through 9)
T
J
= 25
o
C - 1.6 2 V
T
J
= 175
o
C - 1.7 2.3 V
Gate to Emitter Threshold Voltage V
GE(TH)
I
C
= 1mA, V
CE
= V
GE
(Figure 12) 1.3 1.8 2.2 V
Gate Series Resistance R
1
- 70 150
Ω
Gate to Emitter Resistance R
2
10 18 26 k
Ω
Gate to Emitter Leakage Current I
GES
V
GE
=
±
10V
±
310
±
500
±
1000
µ
A
HGT1S14N37G3VLS, HGTP14N37G3VL
©2001 Fairchild Semiconductor Corporation HGT1S14N37G3VLS, HGTP14N37G3VL Rev. A
Gate to Emitter Breakdown Voltage BV
GES
I
GES
=
±2mA ±12 ±14 - V
Current Turn-On Delay Time -
Resistive Load
td(ON)I IC = 6.5A, RG = 1kΩ, VGE = 5V,
RL = 2.1Ω, VDD = 14V, TJ = 150oC
(Figure 14)
-14µs
Current Turn-On Rise Time -
Resistive Load
trI IC = 6.5A, RG = 1kΩ
VGE = 5V, RL = 2.1Ω
VDD = 14V, TJ = 150oC (Figure 14)
-37µs
Current Turn-Off Time -
Inductive Load
td(OFF)I + tfI IC = 6.5A, RG = 1kΩ
VGE = 5V, L = 300µH
VDD = 300V, TJ = 150oC (Figure 14)
-1030µs
Inductive Use Test ISCIS L = 3mH, VG = 5V,
RG = 1kΩ
(Figures 1 and 2)
TC = 150oC 11.5 - - A
TC = 25oC15 - - A
Thermal Resistance RθJC (Figure 18) - - 1.1 oC/W
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT vs TIME IN AVALANCHE
FIGURE 2. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT vs INDUCTANCE
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs JUNCTION TEMPERARURE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs JUNCTION TEMPERATURE
12
4
44
20
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
40 160 20012080
tAV, TIME IN AVALANCHE (ms)
28
36
52
60
RG = 1kΩ, VGE = 5V
ISCIS CAN BE LIMITED BY gfs at VGE = 5V
TJ = 25oC
TJ = 150oC
L, INDUCTANCE (mH)
24
0
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
8
684210
0
32
40
16
48
56
TJ = 25oC
TJ = 150oC
RG = 1kΩ, VGE = 5V
ISCIS CAN BE LIMITED BY gfs at VGE = 5V
TJ, JUNCTION TEMPERATURE (oC)
1.08
1.00
1.20
1.28
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
-50 25 100 175
1.04
1.12
1.16
1.24
ICE = 6A
VGE = 4.0V
VGE = 4.5V
VGE = 5.0V
TJ, JUNCTION TEMPERATURE (oC)
-50 25 100 175
1.38
1.30
1.50
1.34
1.42
1.46
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE = 10A
VGE = 5.0V
VGE = 4.0V
VGE = 4.5V
HGT1S14N37G3VLS, HGTP14N37G3VL
©2001 Fairchild Semiconductor Corporation HGT1S14N37G3VLS, HGTP14N37G3VL Rev. A
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 8. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 9. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 10. TRANSFER CHARACTERISTIC
Typical Performance Curves Unless Otherwise Specified (Continued)
1
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
15
023
30
54
45
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, TJ = 175oCVGE = 5.0V
VGE = 4.0V
VGE = 4.5V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
012 5
0
30
34
15
45
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, TJ = 150oCVGE = 5.0V
VGE = 4.0V
VGE = 4.5V
023
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
10
20
45
50
30
60
1
40
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, TJ = 25oCVGE = 5.0V
VGE = 4.5V
VGE = 4.0V
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
20
40
60
50
70
0 2341
10
30
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, TJ = -40oC
5
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
10
40
30
20
50
60
324501
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
TJ = 25oC
0
32
40
21345
16
8
24
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 5V
TJ = 150oC
TJ = -40oC
TJ = 25oC
HGT1S14N37G3VLS, HGTP14N37G3VL
©2001 Fairchild Semiconductor Corporation HGT1S14N37G3VLS, HGTP14N37G3VL Rev. A
FIGURE 11. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 12. THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 13. LEAKAGE CURRENT vs JUNCTION
TEMPERATURE
FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
8
4
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
16
24
12
5025 75 100 125 150
20
28
0
175
VGE = 5V
VGE(TH) , THRESHOLD VOLTAGE (V)
0.8
1.2
1.6
1.0
1.4
1.8
2.0
-50 25 100 175
TJ, JUNCTION TEMPERATURE (oC)
ICE = 1mA
VCE = VGE
LEAKAGE CURRENTS (µA)
0.1
10
100
25 50 75 100 150
TJ, JUNCTION TEMPERATURE (oC)
125
1000
10000
1
175
VECS = 24V
VCES = 300V
VCES = 250V
SWITCHING TIME (µs)
TJ, JUNCTION TEMPERATURE (oC)
2
14
4
10
6
8
12
16
25 50 75 100 150125 175
RESISTIVE tOFF
INDUCTIVE tOFF
RESISTIVE tON
ICE = 6.5A, VGE = 5V, RG = 1kΩ
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (pF)
0 5 10 15 20 25
0
800
1600
2000
1200
2400
400
FREQUENCY = 1MHz
CRES
COES
CIES
016 40
QG, GATE CHARGE (nC)
4
056
VGE , GATE TO EMITTER VOLTAGE (V)
8
8243248
2
6
IG(REF) = 1mA, RL = 1.865Ω, TJ = 25oC
VCE = 12V
VCE = 6V
HGT1S14N37G3VLS, HGTP14N37G3VL
©2001 Fairchild Semiconductor Corporation HGT1S14N37G3VLS, HGTP14N37G3VL Rev. A
FIGURE 17. BREAKDOWN VOLTAGE vs SERIES GATE RESISTANCE
FIGURE 18. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Typical Performance Curves Unless Otherwise Specified (Continued)
RG, GATE SERIES RESISTANCE (kΩ)
BVCER, BREAKDOWN VOLTAGE (V)
4
330
320
360
340
350
268100
ICER = 10mA
TJ (oC)
-55
25
150
175
t1, RECTANGULAR PULSE DURATION (s)
ZθJC, NORMALIZED THERMAL RESPONSE
10-2
10-1
100
10-5 10-3 10-2 10-1 100
10-4
t1
t2
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
Test Circuits
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. tON AND tOFF SWITCHING TEST CIRCUIT
RG
G
C
E
VDD
3mH
PULSE
GEN DUT
RG = 1kΩ+
-
VDD
DUT
5V
C
G
E
LOAD
R
or
L
HGT1S14N37G3VLS, HGTP14N37G3VL
©2001 Fairchild Semiconductor Corporation HGT1S14N37G3VLS, HGTP14N37G3VL Rev. A
HGT1S14N37G3VLS, HGTP14N37G3VL
TO-263AB SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
TO-263AB
24mm TAPE AND REEL
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
E
A1
A
H1
D
L
b
e
e1
L2
b1
L1
c
TERM. 4
13
13
L3
b2
TERM. 4 0.450
0.350
0.150
(3.81)
0.080 TYP (2.03)
0.700
(11.43)
(8.89)
(17.78)
0.062 TYP (1.58)
J1
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A 0.170 0.180 4.32 4.57 -
A10.048 0.052 1.22 1.32 4, 5
b 0.030 0.034 0.77 0.86 4, 5
b10.045 0.055 1.15 1.39 4, 5
b20.310 - 7.88 - 2
c 0.018 0.022 0.46 0.55 4, 5
D 0.405 0.425 10.29 10.79 -
E 0.395 0.405 10.04 10.28 -
e 0.100 TYP 2.54 TYP 7
e10.200 BSC 5.08 BSC 7
H10.045 0.055 1.15 1.39 -
J10.095 0.105 2.42 2.66 -
L 0.175 0.195 4.45 4.95 -
L10.090 0.110 2.29 2.79 4, 6
L20.050 0.070 1.27 1.77 3
L30.315 - 8.01 - 2
NOTES:
1. These dimensions are within allowable dimensions of Rev. C of
JEDEC TO-263AB outline dated 2-92.
2. L3 and b2 dimensions established a minimum mounting surface
for terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L1 is the terminal length for soldering.
7. Position of lead to be measured 0.120 inches (3.05mm) from bottom
of dimension D.
8. Controlling dimension: Inch.
9. Revision 10 dated 5-99.
2.0mm
4.0mm
1.75mm
1.5mm
DIA. HOLE
C
L
USER DIRECTION OF FEED
16mm
24mm
330mm 100mm
13mm
30.4mm
24.4mm
COVER TAPE
GENERAL INFORMATION
1. 800 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
ACCESS HOLE
40mm MIN.
©2001 Fairchild Semiconductor Corporation HGT1S14N37G3VLS, HGTP14N37G3VL Rev. A
HGT1S14N37G3VLS, HGTP14N37G3VL
TO-220AB
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
LEAD TERMINAL
Lead No. 1 Gate
Lead No. 2 Collector
Lead No. 3 Emitter
Term. No. 4
Mounting Flange
Collector
E
ØP
Q
D
H1
E1
L
L1
60o
b1
b
123
e
e1
A
c
J1
45o
D1
A1
TERM. 4
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A 0.170 0.180 4.32 4.57 -
A10.048 0.052 1.22 1.32 -
b 0.030 0.034 0.77 0.86 3, 4
b10.045 0.055 1.15 1.39 2, 3
c 0.014 0.019 0.36 0.48 2, 3, 4
D 0.590 0.610 14.99 15.49 -
D1- 0.160 - 4.06 -
E 0.395 0.410 10.04 10.41 -
E1- 0.030 - 0.76 -
e 0.100 TYP 2.54 TYP 5
e10.200 BSC 5.08 BSC 5
H10.235 0.255 5.97 6.47 -
J10.100 0.110 2.54 2.79 6
L 0.530 0.550 13.47 13.97 -
L10.130 0.150 3.31 3.81 2
ØP 0.149 0.153 3.79 3.88 -
Q 0.102 0.112 2.60 2.84 -
NOTES:
1. These dimensions are within allowable dimensions of Rev. J of
JEDEC TO-220AB outline dated 3-24-87.
2. Lead dimension and finish uncontrolled in L1.
3. Lead dimension (without solder).
4. Add typically 0.002 inches (0.05mm) for solder coating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bot-
tom of dimension D.
7. Controlling dimension: Inch.
8. Revision 2 dated 7-97.
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not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
PACMAN™
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OPTOLOGIC™
OPTOPLANAR™
Rev. H
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
F ACT Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET™
VCX™