BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. Features * High Current: 1.0 Amp * The SOT-223 package can be soldered using wave or reflow. The * * * formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BCP56T1 to order the 7 inch/1000 unit reel Use BCP56T3 to order the 13 inch/4000 unit reel PNP Complement is BCP53T1 Pb-Free Packages are Available http://onsemi.com MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage Rating VCEO 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 5 Vdc Collector Current IC 1 Adc Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C PD Operating and Storage Temperature Range TJ, Tstg 1.5 12 W mW/C -65 to 150 C 4 1 2 3 SOT-223 CASE 318E STYLE 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient (surface mounted) Symbol Max Unit RqJA 83.3 C/W AYW xxxxxG G 1 Maximum Temperature for Soldering Purposes Time in Solder Bath TL C Sec 260 10 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in. xx = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2005 July, 2005 - Rev. 4 1 Publication Order Number: BCP56T1/D BCP56T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 100 - - Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 80 - - Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 - - Vdc Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO - - 100 nAdc Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO - - 10 mAdc 25 40 63 100 25 - - - - - - 250 160 250 - Characteristics OFF CHARACTERISTICS ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 5.0 mA, VCE = 2.0 V) (IC = 150 mA, VCE = 2.0 V) hFE All Part Types BCP56T1 BCP56-10T1 BCP56-16T1 All Types (IC = 500 mA, VCE = 2.0 V) - Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) - - 0.5 Vdc Base-Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) - - 1.0 Vdc fT - 130 - MHz DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz) 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0% ORDERING INFORMATION Marking Package Shipping BCP56T1 BH SOT-223 1000 / Tape & Reel BCP56T1G BH SOT-223 (Pb-Free) 1000 / Tape & Reel BCP56T3 BH SOT-223 4000 / Tape & Reel BCP56T3G BH SOT-223 (Pb-Free) 4000 / Tape & Reel BCP56-10T1 BH-10 SOT-223 1000 / Tape & Reel BCP56-10T1G BH-10 SOT-223 (Pb-Free) 1000 / Tape & Reel BCP56-16T1 BH-16 SOT-223 1000 / Tape & Reel BCP56-16T1G BH-16 SOT-223 (Pb-Free) 1000 / Tape & Reel BCP56-16T3 BH-16 SOT-223 4000 / Tape & Reel BCP56-16T3G BH-16 SOT-223 (Pb-Free) 4000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BCP56T1 Series TYPICAL ELECTRICAL CHARACTERISTICS hFE , DC CURRENT GAIN 1000 TJ = 125C TJ = 25C 100 10 TJ = - 55C 1 10 100 1000 IC, COLLECTOR CURRENT (mA) 1000 80 60 C, CAPACITANCE (pF) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 1. DC Current Gain 100 TJ = 25C 40 Cibo 20 10 8.0 6.0 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) Cobo 4.0 0.1 1000 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 1.0 V, VOLTAGE (VOLTS) 0.8 TJ = 25C VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) 200 100 Figure 3. Capacitance VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Current-Gain - Bandwidth Product 50 500 1.0 TJ = 25C 0.8 0.6 IC = 10mA 50 mA 100mA 250mA 500mA 0.4 0.2 0 0.05 Figure 4. "On" Voltages 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 20 Figure 5. Collector Saturation Region http://onsemi.com 3 50 BCP56T1 Series PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D b1 4 HE 1 2 3 E b e1 e A 0.08 (0003) C q A1 DIM A A1 b b1 c D E e e1 L1 HE q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 STYLE 1: PIN 1. 2. 3. 4. L1 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10 BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 mm inches 1.5 SCALE 6:1 0.059 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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