© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 4 1Publication Order Number:
BCP56T1/D
BCP56T1 Series
Preferred Devices
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-223
package, which is designed for medium power surface mount
applications.
Features
•High Current: 1.0 Amp
•The SOT-223 package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
•Available in 12 mm Tape and Reel
Use BCP56T1 to order the 7 inch/1000 unit reel
Use BCP56T3 to order the 13 inch/4000 unit reel
•PNP Complement is BCP53T1
•Pb−Free Packages are Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 100 Vdc
Emitter-Base Voltage VEBO 5 Vdc
Collector Current IC1 Adc
Total Power Dissipation
@ TA = 25°C (Note 1)
Derate above 25°C
PD1.5
12 W
mW/°C
Operating and Storage
Temperature Range TJ, Tstg −65 to 150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
(surface mounted)
RqJA 83.3 °C/W
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
TL260
10 °C
Sec
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
Preferred devices are recommended choices for future use
and best overall value.
COLLECTOR 2,4
BASE
1
EMITTER 3
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
123
4
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See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
AYW
xxxxxG
G
xx = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location
)
BCP56T1 Series
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0) V(BR)CBO 100 − − Vdc
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) V(BR)CEO 80 − − Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc
Collector−Base Cutoff Current
(VCB = 30 Vdc, IE = 0) ICBO − − 100 nAdc
Emitter-Base Cutoff Current
(VEB = 5.0 Vdc, IC = 0) IEBO − − 10 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 5.0 mA, VCE = 2.0 V) All Part Types
(IC = 150 mA, VCE = 2.0 V) BCP56T1
BCP56-10T1
BCP56-16T1
(IC = 500 mA, VCE = 2.0 V) All Types
hFE 25
40
63
100
25
−
−
−
−
−
−
250
160
250
−
−
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc) VCE(sat) − − 0.5 Vdc
Base-Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) − − 1.0 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz) fT− 130 − MHz
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
ORDERING INFORMATION
Device Marking Package Shipping†
BCP56T1 BH SOT−223 1000 / Tape & Reel
BCP56T1G BH SOT−223
(Pb−Free) 1000 / Tape & Reel
BCP56T3 BH SOT−223 4000 / Tape & Reel
BCP56T3G BH SOT−223
(Pb−Free) 4000 / Tape & Reel
BCP56−10T1 BH−10 SOT−223 1000 / Tape & Reel
BCP56−10T1G BH−10 SOT−223
(Pb−Free) 1000 / Tape & Reel
BCP56−16T1 BH−16 SOT−223 1000 / Tape & Reel
BCP56−16T1G BH−16 SOT−223
(Pb−Free) 1000 / Tape & Reel
BCP56−16T3 BH−16 SOT−223 4000 / Tape & Reel
BCP56−16T3G BH−16 SOT−223
(Pb−Free) 4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BCP56T1 Series
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3
TYPICAL ELECTRICAL CHARACTERISTICS
hFE, DC CURRENT GAIN
100
10 1000100101
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 2. Current-Gain − Bandwidth Product
f, CURRENT-GAIN  BANDWIDTH PRODUCT (MHz)
T
1000
100
10 100101.0 1000
C, CAPACITANCE (pF)
80
60
40
20
10
8.0
6.0
4.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
1.0
0.4
01001.00.5 500
1.0
0.8
0.6
0.4
0.2
0
IC, COLLECTOR CURRENT (mA)
Figure 5. Collector Saturation Region
0.05 0.1 0.2 0.5 2.0 5.0 10 20 50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
0.8
0.6
0.2
2.0 5.0 10 20 50 200 1.0
VBE(on) @ VCE = 1.0 V
VCE(sat) @ IC/IB = 10
VBE(sat) @ IC/IB = 10
TJ = 125°C
TJ = 25°C
TJ = −55°C
TJ = 25°C
50
mA
100mA
TJ = 25°C
250mA 500mA
IC = 10mA
TJ = 25°C
Cibo
Cobo
1000
BCP56T1 Series
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4
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE L
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091 2.3
0.091
2.0
0.079
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
HEDIM
AMIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264 0.069 0.078
0.276 0.287
HE− −
e1
0°10°0°10°
qq
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BCP56T1/D
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