2SB1409(L)/(S) Silicon PNP Epitaxial ADE-208-877 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1409(L)/(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO -180 V Collector to emitter voltage VCEO -160 V Emitter to base voltage VEBO -5 V Collector current IC -1.5 A Collector peak current I C(peak) -3 A 18 W 1 Collector power dissipation PC * Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note: 1. Value at TC = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO -180 -- -- V I C = -1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage -160 -- -- V I C = -10 mA, RBE = Emitter to base breakdown voltage V(BR)EBO -5 -- -- V I E = -1 mA, IC = 0 Collector cutoff current I CBO -- -- -10 A VCB = -160 V, IE = 0 60 -- 200 VCE = -5 V, IC = -150 mA*2 hFE2 30 -- -- VCE = -5 V, IC = -500 mA*2 Collector to emitter saturation voltage VCE(sat) -- -- -1 V I C = -500 mA, IB = -50 mA Base to emitter voltage VBE -- -- -1.5 V VCE = -5 V, IC = -150 mA Gain bandwidth product fT -- 240 -- MHz VCE = -5 V, IC = -150 mA Collector output capacitance Cob -- 25 -- pF VCB = -10 A, IE = 0, f = 1 MHz DC current transfer ratio hFE1* 1 Notes: 1. The 2SB1409(L)/(S) is grouped by h FE1 as follows. B C 60 to 120 100 to 200 2. Pulse test. 2 2SB1409(L)/(S) Maximum Collector Dissipation Curve Area of Safe Operation 20 -1.0 PW = IC (max) -0.3 s 1m -0.1 on a ti (T C = -0.03 Ta = 25C 1 Shot Pulse -0.01 -3 -10 -30 -100 -300 Collector to emitter Voltage VCE (V) C 25 ) 0 50 100 Case Temperature TC (C) 150 DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics -0.8 -0.6 1,000 PC = 18 W -5 5 -4. -4 -3.5 -3 -2.5 DC current transfer ratio hFE -1.0 Collector Current IC (A) 10 ms iC (peak) er 10 -3 Op Collector Current IC (A) -10 DC Collector power dissipation Pc (W) 30 -2 -0.4 -1.5 -1 mA -0.2 IB = 0 0 TC = 25C -10 -20 -30 -40 -50 Collector to emitter Voltage VCE (V) 300 100 30 10 -0.01 VCE = -5 V Ta = 25C -0.03 -0.1 -0.3 Collector current IC (A) -1.0 3 2SB1409(L)/(S) Saturation Voltage vs. Collector Current -10 -1.0 -0.1 -0.01 -0.001 lC = 10 lB Ta = 25C -0.01 -0.1 Collector current IC (A) Base to emitter saturation voltage VBE (sat) (V) Collector to emitter saturation voltage VCE (sat) (V) Saturation Voltage vs. Collector Current -10 -3 -1.0 -0.3 -0.1 -0.03 -1.0 -3.0 1,000 -1.6 -1.2 -0.8 -0.4 VCE = -5 V Ta = 25C 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Base to emitter voltage VBE (V) Gain bandwidth product fT (MHz) -2.0 Collector current IC (A) -0.1 -0.3 -1.0 Collector current IC (A) Gain Bandwidth Product vs. Collector Current Typical Transfer Characteristics 4 lC = 10 lB Ta = 25C 300 100 30 10 -0.01 VCE = -5 V Ta = 25C -0.03 -0.1 -0.3 Collector current IC (A) -1.0 2SB1409(L)/(S) Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 300 100 30 10 f = 1 MHz IE = 0 Ta = 25C 3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) 5 2SB1409(L)/(S) Package Dimensions 1.7 0.5 Unit: mm 2.3 0.2 0.55 0.1 5.5 0.5 6.5 0.5 5.4 0.5 3.1 0.5 1.15 0.1 0.8 0.1 2.29 0.5 16.2 0.5 1.2 0.3 2.29 0.5 0.55 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (L)-(1) -- Conforms 0.42 g 2.3 0.2 0.55 0.1 (4.9) (5.3) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.7 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 6 DPAK (S)-(1) -- Conforms 0.28 g 2SB1409(L)/(S) Cautions 1. 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