TIP107 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R203-023,C
ABSOLUTE MAXIMUM RA TING (TC=25°C)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCES -100 V
Emitter-Base Voltage VEBO -5 V
DC IC -8 A
Collector Current Pulse ICP -15 A
Base Current DC IB -1
A
Collector Power Dissipation PC 80 W
Junction Temperature TJ 150 °C
Storage Temperature TSTG -65~+150 °C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device op eration is not implied.
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Sustaining Voltage VCEO(SUS) I
C=-30mA, IB=0A -100
V
Collector-Base Cut-Off Current ICBO VCB=-100V, IE=0A -50 µA
Collector-Emitter Cut-Off Current ICEO VCE=-50V, IB=0A 50
µA
Emitter-Base Cut-Off Current IEBO VEB=-5V, IC=0A -2
mA
ON CHARACTERISTICS hFE1 VCE=-4V, IC=-3A 1000 20000
DC Current Gain hFE2 VCE=-4V, IC=-8A 200
IC=-3A, IB=-6mA -2
V
Collector-Emitter Saturation Voltage VCE(SAT) IC=-8A, IB=-80mA -2.5 V
Base-Emitter ON Voltage VBE(ON) V
CE=-4V, IC=-8A -2.8 V
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance Cob VCB=-10V, IE=0A, f=0.1MHZ 300 pF