0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45°
0.040 (1.02)
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
0.50 (12.7)
MIN
0.255 (6.48)
Collector
(Case)
Base
Emitter
Ø0.100 (2.54)
0.020 (0.51) 3X
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of
940 nm.
PACKAGE DIMENSIONS FEATURES
• Hermetically sealed package
• Narrow reception angle
• European “Pro Electron” registered
Parameter Symbol Rating Unit
Operating Temperature TOPR -65 to +125 °C
Storage Temperature TSTG -65 to +150 °C
Soldering Temperature (Iron)(3,4,5 and 6) TSOL-I 240 for 5 sec °C
Soldering Temperature (Flow)(3,4 and 6) TSOL-F 260 for 10 sec °C
Collector-Emitter Voltage VCEO 25 V
Collector-Base Voltage VCBO 25 V
Emitter-Base Voltage VEBO 12 V
Power Dissipation (TA= 25°C)(1) PD300 mW
Power Dissipation (TC= 25°C)(2) PD600 mW
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
BPW38
HERMETIC SILICON PHOTODARLINGTON
DESCRIPTION
• The BPW38 is a silicon photodarlington
mounted in narrow angle TO-18 package.
C
E
B
SCHEMATIC
2001 Fairchild Semiconductor Corporation
DS300280 3/15/01 1 OF 4 www.fairchildsemi.com
0.1
1.0
10
100
IL - NORMALIZED LIGHT CURRENT
0.01
0.1
1.0
10
IL/IL @25˚C - RELATIVE LIGHT CURRENT
0 5 10 15 20 25 30 35 -50 -25 0 25 50 75 100 125
VCE - COLLECTOR TO EMITTER (V)
Fig. 1 Light Current vs. Collector to Emitter Voltage
TA - TEMPERATURE (˚C)
Fig. 2 Relative Light Current vs. Ambient Temperature
Normalized to:
VCE = 5 V
Ee = .2 mW/cm2
Normalized to:
VCE = 5 V
Ee = 0.2 mW/cm2
Ee = 5.0 mW/cm2
Ee = 2.0 mW/cm2
Ee = 1.0 mW/cm2
Ee = 0.5 mW/cm2
Ee = 0.2 mW/cm2
Ee = 0.1 mW/cm2
Ee = 0.05 mW/cm2
www.fairchildsemi.com 2 OF 4 3/15/01 DS300280
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Collector-Emitter Breakdown IC= 10 mA, Ee = 0 BVCEO 25 — — V
Emitter-Base Breakdown IE= 100 µA, Ee = 0 BVEBO 12 — — V
Collector-Base Breakdown IC= 100 µA, Ee = 0 BVCBO 25 — — V
Collector-Emitter Leakage VCE = 12 V, Ee = 0 ICEO — — 100 nA
Reception Angle at 1/2 Sensitivity 0— ±8 — Deg.
On-State Collector Current Ee = 0.125 mW/cm2
IC(ON) 7.5 — — mA
VCE = 5 V(7)
Rise Time IC= 10 mA, VCC = 10 V tr— 300 — µs
RL= 100 1
Fall Time IC= 10 mA, VCC = 10 V tf— 250 — µs
RL= 100 1
ELECTRICAL / OPTICAL CHARACTERISTICS (TA=25°C) (All measurements made under pulse conditions)
BPW38
HERMETIC SILICON PHOTODARLINGTON
TYPICAL PERFORMANCE CURVES
BPW38
HERMETIC SILICON PHOTODARLINGTON
0
10
20
30
40
50
60
70
80
90
100
110
RELATIVE AMPLITUDE
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RELATIVE SPECTRAL RESPONSE
400 500 600 700 800 900 1000 1100 1200
D- WAVELENGTH - NANOMETERS
Fig. 3 Spectral Response Curve
0.1
1.0
10
100
IL - LIGHT CURRENT (mA)
0.01 0.1 1.0 10 100
RELATIVE SWITCHING SPEED
Fig. 5 Light Current vs. Relative Switching Speed Fig. 6 Test Circuit and Voltage Waveforms
-90˚-70˚-50˚-30˚-10˚10˚30˚50˚70˚90˚
DEGREES
Fig. 4 Angular Response
Normalized to:
RL = 1001
IL = 10 mA
Load Resistance
101
10001
1001
VCC = 10 V
tf
t
r
t
s
INPUT PULSE
10
90
1.0 V
OUTPUT
OUTPUT
V
CC
BPW38
INPUT
LED
t
d
%
%
PULSE
R
L
I
t
ON
= t
d +
t
r
t
OFF =
t
s +
t
f
DS300280 3/15/01 3 OF 4 www.fairchildsemi.com
TYPICAL PERFORMANCE CURVES
BPW38
HERMETIC SILICON PHOTODARLINGTON
www.fairchildsemi.com 4 OF 4 3/15/01 DS300280
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.