PNP SWITCHING SILICON
TRANSISTOR
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 7960
Issue 2
Page 1 of 3
2N3867SMD05
• High Voltage
• Hermetic Ceramic Surface Mount Package
• Ideally suited for Power Linear, Switching
and general Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 40V
VCEO Collector – Emitter Voltage 40V
VEBO Emitter – Base Voltage 4V
IC Continuous Collector Current 3A
IB Base Current 0.5A
PD Total Power Dissipation at TC = 25°C
(1)
35W
TA = 25°C
(2)
1.0W
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJC Thermal Resistance, Junction To Case 5 °C/W
PNP SWITCHING SILICON
TRANSISTOR
2N3867SMD05
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 7960
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CEO
(3)
Collector-Emitter
Breakdown Voltage IC = 20mA IB = 0 40 V
VCE = 40V VEB = 2V 1.0
ICEX Collector Cut-Off Current
TA = 150°C 50
µA
ICBO Collector Cut-Off Current VCB = 40V IE = 0 100
IEBO Emitter Cut-Off Current VEB = 4V IC = 0 100
µA
IC = 500mA VCE = 1.0V 50
TA = -55°C 25
IC = 1.5A VCE = 2V 40 200
IC = 2.5A VCE = 3V 25
hFE
(3)
Forward-current transfer
ratio
IC = 3A VCE = 5V 20
-
IC = 500mA IB = 50mA 0.5
IC = 1.5A IB = 150mA 0.75
VCE(sat)
(3)
Collector-Emitter Saturation
Voltage
IC = 2.5A IB = 250mA 1.5
IC = 500mA IB = 50mA 1.0
IC = 1.5A IB = 150mA 0.9 1.4
VBE(sat)
(3)
Base-Emitter Saturation
Voltage
IC = 2.5 IB = 250mA 2
V
DYNAMIC CHARACTERISTICS
IC = 100mA VCE = 5
hfe
Magnitude of common-
emitter small-signal short-
circuit forward-current
transfer ratio f = 20MHz
3 12
Cobo Output Capacitance VCB = 10V
IE = 0
f = 1 MHz
120
Cibo Input Capacitance VEB = 3V
IC = 0
f = 1 MHz
800
pF
td Delay Time VCC = -30V VEB = 0V 35
tr Rise Time IC = 1.5A ,IB1 = 150mA 65
ts Storage Time VCC = -30V VEB = 0V 500
tf Fall Time IC = 1.5A ,IB1 = IB2 = 150mA 100
ns
Notes
NotesNotes
Notes
(1) Derate Linearly 200mW/
°C for TC
> 25
°C
(2) Derate Linearly 5.7mW/
°C for TA
> 25
°C
(3) Pulse Width ≤ 300us, δ ≤ 2%
PNP SWITCHING SILICON
TRANSISTOR
2N3867SMD05
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 7960
Issue 2
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
SMD05 (TO
-
276AA)
Underside View
Pad 1 – Base Pad 2 – Collector Pad 3 - Emitter
2
1 3
2.41 (0.095)
(0.030)
min.
3.05 (0.120)
5.72 (.225)
0.127 (0.005)
(0.296)
10.16 (0.400)
0.76
(0.030)
min.
3.175 (0.125)
Max.
0.50 (0.020)
max.
7.54
0.76
2.41 (0.095)
0.127 (0.005)
(0.286) 7.26
16 PLCS
0.50(0.020)
0.127 (0.005)
