PNP SWITCHING SILICON TRANSISTOR 2N3867SMD05 * High Voltage * Hermetic Ceramic Surface Mount Package * Ideally suited for Power Linear, Switching and general Purpose Applications * Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Base Current TC = 25C(1) Total Power Dissipation at TA = 25C(2) Junction Temperature Range Storage Temperature Range 40V 40V 4V 3A 0.5A 35W 1.0W -65 to +200C -65 to +200C THERMAL PROPERTIES Symbols Parameters RJC Thermal Resistance, Junction To Case Max. Units 5 C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 7960 Issue 2 Page 1 of 3 PNP SWITCHING SILICON TRANSISTOR 2N3867SMD05 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CEO Collector-Emitter Breakdown Voltage IC = 20mA IB = 0 ICEX Collector Cut-Off Current VCE = 40V VEB = 2V 1.0 TA = 150C 50 ICBO Collector Cut-Off Current VCB = 40V IE = 0 100 IEBO Emitter Cut-Off Current VEB = 4V IC = 0 100 IC = 500mA VCE = 1.0V 50 TA = -55C 25 IC = 1.5A VCE = 2V 40 IC = 2.5A VCE = 3V 25 IC = 3A VCE = 5V 20 IC = 500mA IB = 50mA 0.5 IC = 1.5A IB = 150mA 0.75 IC = 2.5A IB = 250mA 1.5 IC = 500mA IB = 50mA 1.0 IC = 1.5A IB = 150mA IC = 2.5 IB = 250mA IC = 100mA VCE = 5 (3) hFE Forward-current transfer ratio (3) (3) VCE(sat) VBE(sat) (3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Min. Typ Max. 40 0.9 Units V 200 A A - V 1.4 2 DYNAMIC CHARACTERISTICS hfe Magnitude of commonemitter small-signal shortcircuit forward-current transfer ratio Cobo Output Capacitance VCB = 10V Cibo Input Capacitance VEB = 3V IC = 0 td Delay Time VCC = -30V VEB = 0V tr Rise Time IC = 1.5A ,IB1 = 150mA 65 ts Storage Time VCC = -30V 500 tf Fall Time IC = 1.5A ,IB1 = IB2 = 150mA 3 12 f = 20MHz IE = 0 120 f = 1 MHz pF 800 f = 1 MHz 35 VEB = 0V ns 100 Notes (1) Derate Linearly 200mW/C for TC > 25C (2) Derate Linearly 5.7mW/C for TA > 25C (3) Pulse Width 300us, 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 7960 Issue 2 Page 2 of 3 PNP SWITCHING SILICON TRANSISTOR 2N3867SMD05 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 2 0.127 (0.005) 0.127 (0.005) 16 PLCS 0.50(0.020) 0.50 (0.020) max. 7.26 (0.286) SMD05 (TO-276AA) Underside View Pad 1 - Base Pad 2 - Collector Pad 3 - Emitter Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 7960 Issue 2 Page 3 of 3