FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366m Features tm General Description Max rDS(on) = 366m at VGS = 10V, ID = 1.0A UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Typ Qg = 12.7nC at VGS = 10V Low Miller charge Low Qrr Body Diode Application Optimized efficiency at high frequencies UIS Capability ( Single Pulse and Repetitive Pulse) DC/DC converters and Off-Line UPS RoHS Compliant Distributed Power Architectures Bottom 5 6 7 Top 8 D 4 3 2 D D D 1 S S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S Power 33 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Silicon limited) TC= 25C -Continuous TA = 25C ID TJ, TSTG Units V 20 V 7.0 (Note 1b) -Pulsed PD Ratings 220 1.0 A 13.8 Power Dissipation TC = 25C Power Dissipation TA = 25C 42 (Note 1a) Operating and Storage Junction Temperature Range 2.1 -55 to +150 W C Thermal Characteristics RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient (Note 1) 3.0 (Note 1a) 60 C/W Package Marking and Ordering Information Device Marking FDMC2674 Device FDMC2674 (c)2006 Fairchild Semiconductor Corporation FDMC2674 Rev.F Package Power 33 1 Reel Size 7'' Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench MOSFET January 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V BVDSS TJ Breakdown Voltage Temperature Coefficient 220 V ID = 250A, referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = 176V, VGS = 0V 1 A IGSS Gate to Source Leakage Current VGS = 20V, VDS = 0V 100 nA 4 V mV/C 248 On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250A, referenced to 25C rDS(on) Static Drain to Source On Resistance 2 3.4 -10.2 mV/C VGS = 10V, ID = 1.0A 305 366 VGS = 10V, ID = 1.0A , TJ = 150C 678 814 880 1180 pF 70 95 pF 11 20 pF m Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 100V, VGS = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDD = 100V, ID = 1.0A VGS = 10V, RGEN = 2.4 VGS = 0V to 10V VDD = 15V ID = 1.0A 9 18 ns 13 23 ns 15 27 ns 21 34 ns 12.7 18 nC 3.8 nC 2.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 2.2A (Note 2) IF = 1.0A, di/dt = 100A/s 0.8 1.5 V 60 ns 109 nC Notes: 1: RJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a)RJA = 60C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5'x1.5'x0.062' thick PCB. (b)RJA = 135C/W when mounted on a minimum pad of 2 oz copper. a. 60C/W when mounted on a 1 in2 pad of 2 oz copper b. 135C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDMC2674 Rev.F 2 www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench MOSFET Electrical Characteristics TJ = 25C unless otherwise noted 2.5 VGS = 10V 2.0 VGS = 5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 3.0 VGS = 7V 1.5 VGS = 4.5V 1.0 0.5 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 0.0 0.0 0.5 1.0 1.5 1.6 VGS = 4.5V 1.4 VGS = 5.0V 1.2 VGS = 7V 1.0 VGS = 10V 0.8 0.5 VDS, DRAIN TO SOURCE VOLTAGE (V) ID = 1A VGS = 10V 2.0 1.6 1.2 0.8 0.4 -50 3.0 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) TJ = 150oC TJ = 25oC TJ = -55oC 0 2 0.4 0.3 TJ = 25oC 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 8 12 16 VGS, GATE TO SOURCE VOLTAGE (V) 20 Figure 4. On-Resistance vs Gate to Source Voltage VDD = 5V 1 TJ = 150oC 0.5 4 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 2 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 0.6 150 4 3 ID = 1A 0.7 0.2 Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 2.5 0.8 2.4 6 Figure 5. Transfer Characteristics FDMC2674 Rev.F 1.0 1.5 2.0 ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage RDS(on), DRAIN TO SOURCE ON-RESISTANCE () NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On-Region Characteristics PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 20 10 VGS = 0V 1 TJ = 150oC 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-3 1E-4 0.0 0.3 0.6 0.9 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2000 VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = 1A 1000 CAPACITANCE (pF) 8 VDD = 100V 6 4 2 Ciss 100 Coss f = 1MHz VGS = 0V 10 0 3 6 9 Qg, GATE CHARGE(nC) 12 15 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 2 30 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) Crss 5 0.1 0 1 TJ = 25oC TJ = 125oC rDS(on) LIMITED 10 100us 1 1ms 10ms 0.1 100ms SINGLE PULSE TJ = MAX RATED 1s 10s RJA = 135oC/W 0.01 TA = 25oC 0.1 0.01 0.1 1 10 1E-3 0.1 100 tAV, TIME IN AVALANCHE(ms) DC 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 500 TA = 25oC 100 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 I = I25 150 - T A -----------------------125 SINGLE PULSE o 1 0.5 -4 10 RJA = 135 C/W -3 10 -2 10 -1 10 t, PULSE WIDTH (s) 0 10 1 10 2 10 3 10 Figure 11. Single Pulse Maximum Power Dissipation FDMC2674 Rev.F 4 www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE o RJA = 135 C/W 1E-3 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve FDMC2674 Rev.F 5 www.fairchildsemi.com FDMC2674 N-Channel UltraFET Trench MOSFET Typical Characteristics TJ = 25C unless otherwise noted FDMC2674 N-Channel UltraFET Trench MOSFET www.fairchildsemi.com 6 FDMC2674 Rev.F The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 FDMC2674 Rev. F 7 www.fairchildsemi.com FDMC2674 N-Channel UItraFET Trench MOSFET TRADEMARKS