1N6356 thru 1N6372, e3 or MPT-5 thru MPT-45C, e3 1500 W LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor (TVS) series for 1N6356 thru 1N6372 are JEDEC registered selections for both unidirectional and bidirectional devices. The 1N6356 thru 1N6364 are unidirectional and the 1N6365 thru 1N6372 are bi-directional where they all provide a very low specified clamping factor for minimal clamping voltages (VC) above their respective breakdown voltages (VBR) as specified herein. They are most often used in protecting sensitive components from inductive switching transients or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5 . They are also very successful in protecting airborne avionics and electrical systems. Since their response time is virtually instantaneous, they can also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. DO-13 (DO-202AA) WWW . Microsemi .C OM DESCRIPTION IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com FEATURES * * * * * * * * * * APPLICATIONS / BENEFITS Unidirectional and bidirectional TVS series for thru-hole mounting Suppresses transients up to 1500 watts @ 10/1000 s tclamping (0 volts to V(BR) min): Unidirectional - Less than 100 pico seconds. Bidirectional - Less than 5 nano seconds. Working voltage (VWM) range 5 V to 45 V Low clamping factor (ratio of actual VC/VBR): 1.33 @ full rated power and 1.20 @ 50% rated power Hermetic sealed DO-13 metal package Options for screening in accordance with MIL-PRF-19500 for JAN, JANTX, JANTXV, and JANS are also available by adding MQ, MX, MV, SP prefixes respectively to part numbers, e.g. MX1N6356, etc. RoHS Compliant devices available by adding "e3" suffix Surface mount equivalent packages also available as SMCJ6356 - SMCJ6372 (consult factory for other surface mount options) Plastic axial-leaded equivalents available in the 1N6373 - 1N6389 series (see separate data sheet) * Designed to protect Bipolar and MOS Microprocessor based systems. * Protection from switching transients and induced RF * ESD and EFT protection per IEC 61000-4-2 and -4-4 * Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance: Class 1, 2 & 3 1N6356 to 1N6372 Class 4: 1N6356 to 1N6362 * Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance: Class 1 & 2: 1N6356 to 1N6372 Class 3: 1N6356 to 1N6362 Class 4: 1N6356 to 1N6358 * Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance: Class 2: 1N6356 to 1N6361 Class 3: 1N6356 to 1N6358 * Inherently radiation hard per Microsemi MicroNote 050 MAXIMUM RATINGS * * * * 1500 Watts for 10/1000 s with repetition rate of 0.01% or o less* at lead temperature (TL) 25 C (See Figs. 1, 2, & 4) Operating & Storage Temperatures: -65o to +175oC o THERMAL RESISTANCE: 50 C/W junction to lead at 0.375 inches (10 mm) from body or 110 oC/W junction to 2 ambient when mounted on FR4 PC board with 4 mm copper pads (1 oz) and track width 1 mm, length 25 mm o DC Power Dissipation*: 1 Watt at TL < +125 C 3/8" or 10 mm from body (also see Figure 5) Forward surge current: 200 Amps for 8.3ms half-sine wave at TA = +25oC for unidirectional only (1N6356-6364) Solder Temperatures: 260 o C for 10 s (maximum) * * * * * * * CASE: DO-13 (DO-202AA), welded, hermetically sealed metal and glass FINISH: All external metal surfaces are Tin-Lead or RoHS Compliant annealed matte-Tin plating solderable per MIL-STD-750 method 2026 POLARITY: Cathode connected to case and polarity indicated by diode symbol MARKING: Part number and polarity diode symbol WEIGHT: 1.4 grams. (Approx) TAPE & REEL option: Standard per EIA-296 (add "TR" suffix to part number) See package dimension on last page * TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage (VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region). Copyright (c) 2007 10-03-2007 REV C Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N6356 thru 1N6372, e3 MPT-5 thru MPT-45C, e3 * * MECHANICAL AND PACKAGING 1N6356 thru 1N6372, e3 or MPT-5 thru MPT-45C, e3 1500 W LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION MAXIMUM MINIMUM* REVERSE BREAKDOWN STAND-OFF LEAKAGE VOLTAGE VOLTAGE @VWM @ 1.0 mA (NOTE 1) ID V(BR) (min) VWM MICROSEMI PART NUMBER VOLTS A VOLTS 6.0 300 5.0 MPT-5 1N6356 9.4 25 8.0 MPT-8 1N6357 11.7 2 10.0 MPT-10 1N6358 14.1 2 12.0 MPT-12 1N6359 17.6 2 15.0 MPT-15 1N6360 21.2 2 18.0 MPT-18 1N6361 25.9 2 22.0 MPT-22 1N6362 42.4 2 36.0 MPT-36 1N6363 52.9 2 45.0 MPT-45 1N6364 VF at 100 amps peak is 3.5 volts maximum at 8.3 ms half-sine wave. MAXIMUM CLAMPING VOLTAGE (Fig. 2) IPP1 = 1A VC VOLTS 7.1 11.3 13.7 16.1 20.1 24.2 29.8 50.6 63.3 MAXIMUM CLAMPING VOLTAGE (Fig. 2) @ IPP2 = 10A VC VOLTS 7.5 11.5 14.1 16.5 20.6 25.2 32.0 54.3 70.0 MAXIMUM PEAK PULSE CURRENT IPP3 A 160 100 90 70 60 50 40 23 19 7.1 11.4 14.1 16.7 20.8 24.8 30.8 50.6 63.3 7.5 11.6 14.5 17.1 21.4 25.5 32.0 54.3 70.0 160 100 90 70 60 50 40 23 19 WWW . Microsemi .C OM ELECTRICAL CHARACTERISTICS @ 25oC (Unidirectional) ELECTRICAL CHARACTERISTICS @ 25oC (Bidirectional) MPT-5C MPT-8C 1N6365 MPT-10C 1N6366 MPT-12C 1N6367 MPT-15C 1N6368 MPT-18C 1N6369 MPT-22C 1N6370 MPT-36C 1N6371 MPT-45C 1N6372 C Suffix indicates Bidirectional 5.0 8.0 10.0 12.0 15.0 18.0 22.0 36.0 45.0 300 25 2 2 2 2 2 2 2 6.0 9.4 11.7 14.1 17.6 21.2 25.9 42.4 52.9 NOTE 1: TVS devices are normally selected according to the reverse "Stand Off Voltage" (VWM) which should be equal to or greater than the DC or continuous peak operating voltage level. * The minimum breakdown voltage as shown takes into consideration the + volt tolerance normally specified for power supply regulation on most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated power supply voltages are employed. GRAPHS 1N6356 thru 1N6372, e3 MPT-5 thru MPT-45C, e3 FIGURE 1 Peak Pulse Power vs. Pulse Time Copyright (c) 2007 10-03-2007 REV C FIGURE 2 Typical Characteristic Clamping Voltage vs. Peak Pulse Current Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 1N6356 thru 1N6372, e3 or MPT-5 thru MPT-45C, e3 1500 W LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR WWW . Microsemi .C OM Pulse current (IP) in percent of IPP SCOTTSDALE DIVISION Peak Value IPP Pulse time duration (tp) is defined as that point where IP decays to 50% of peak value (IPP). time (t) in milliseconds FIGURE 3 Pulse wave form for exponential surge FIGURE 4 Typical Capacitance vs. Breakdown Voltage (Unidirectional Types) PACKAGE DIMENSIONS FIGURE 5 Typical Capacitance vs. Breakdown Voltage (Bidirectional Types) Steady-state power dissipation (watts) 1N6356 thru 1N6372, e3 MPT-5 thru MPT-45C, e3 TL - lead Temperature oC FIG. 5 Steady-state power derating curve Copyright (c) 2007 10-03-2007 REV C Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3