140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1577 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS Features * * * * * * * * * * 860 - 900 MHz 24 VOLTS POUT = 40 WATTS GP = 6.0 dB MINIMUM CLASS AB PUSH PULL INTERNAL INPUT MATCHED HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1577 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. ABSOLUTE MAXIMUM RATINGS (Tcase Tcase = 25 25 C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value Unit 45 30 3.0 8.0 175 +200 -65 to +150 V V V A W C C 1.0 C/W Thermal Data RTH(J-C) Thermal Resistance Junction-case MSCXXXX.PDF 01-19-99 MS1577 ELECTRICAL SPECIFICATIONS (Tcase = 25 25 C) STATIC Symbol BVCBO BVCER BVCEO BVEBO ICEO HFE Test Conditions IC = 20 mA IC = 20mA IC = 40 mA IE = 5 mA VCE = 28V VCE = 20 V IE = 0 mA RBE = 10 IB = 0 mA IC = 0 mA IE = 0 mA IC = 3 A Min. Value Typ. Max. Unit 45 40 30 3.0 --10 ------------- --------5 80 V V V V mA --- Min. Value Typ. Max. Unit DYNAMIC Symbol Test Conditions POUT f = 900 MHz VCE = 24 V ICQ = 2 x 250 mA 40 --- --- GP f = 900 MHz VCE = 24 V ICQ = 2 x 250 mA 6.0 --- --- W dB C f = 900 MHz VCE = 24 V ICQ = 2 x 250 mA 40 --- --- % COB f =1 MHz VCB = 28 V 60 --- 80 pf MSCXXXX.PDF 01-19-99 MS1577 TYPICAL PERFORMANCE MSCXXXX.PDF 01-19-99 MS1577 PACKAGE MECHANICAL DATA MSCXXXX.PDF 01-19-99