MSCXXXX.PDF 01-19-99
MS1577
DESCRIPTION: DESCRIPTION:
The MS1577 is a gold metallized epitaxial silicon NPN planar
transistor using diffused emitter ballast resistors for high
linearity Class AB operation in cellular base station applications.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25Tcase = 25°°C)C)
Symbol
Parameter
Value
Unit
VCBO Collector-Base Voltage 45 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 3.0 V
ICDevice Current 8.0 A
PDISS Power Dissipation 175 W
TJJunction Temperature +200 °°C
TSTG Storage Temperature -65 to +150 °°C
Thermal DataThermal Data
RTH(J-C) Thermal Resistance Junction-case 1.0 °°C/W
FeaturesFeatures
• 860 - 900 MHz
• 24 VOLTS
• POUT = 40 WATTS
• GP = 6.0 dB MINIMUM
• CLASS AB PUSH PULL
• INTERNAL INPUT MATCHED
• HIGH SATURATED POWER CAPABILITY
• GOLD METALLIZATION
• DIFFUSED EMITTER BALLAST
• COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
800/900 MHz APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MSCXXXX.PDF 01-19-99
MS1577
ELECTRICAL SPECIFICATIONS (Tcase = 25 ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATICSTATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCBO IC = 20 mA IE = 0 mA 45 --- --- V
BVCER IC = 20mA RBE = 10ΩΩ 40 --- --- V
BVCEO IC = 40 mA IB = 0 mA 30 --- --- V
BVEBO IE = 5 mA IC = 0 mA 3.0 --- --- V
ICEO VCE = 28V IE = 0 mA --- --- 5mA
HFE VCE = 20 V IC = 3 A 10 --- 80 ---
DYNAMICDYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT f = 900 MHz V
CE
= 24 V I
CQ
= 2 x 250 mA 40 --- --- W
GPf = 900 MHz VCE = 24 V ICQ = 2 x 250 mA 6.0 --- --- dB
ηηCf = 900 MHz VCE = 24 V ICQ = 2 x 250 mA 40 --- --- %%
COB f =1 MHz VCB = 28 V 60 --- 80 pf
MSCXXXX.PDF 01-19-99
MS1577
TYPICAL PERFORMANCE TYPICAL PERFORMANCE
MSCXXXX.PDF 01-19-99
MS1577
PACKAGE MECHANICAL DATA PACKAGE MECHANICAL DATA
