T TRF250,251 D86FN2,M2 30 AMPERES 200, 150 VOLTS RDS(ON) = 0.085 0 PONE: MOS [FET FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear N-CHANNEL QD) 6 CASE STYLE TO-204AE (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) transfer characteristics makes it well suited for many linear LL MAX. | F3581905) Max applications such as audio amplifiers and servo motors. waxy [oe Features + + SEATING PLANE sae ope TT .063(1.60). L 426(10.82) MIN @ Polysilicon gate Improved stability and reliability ceenras) Of No secondary breakdown Excellent ruggedness SNMAX =f o.sr5ct7.15 0.650(16.51) Ultra-fast switching Independent of temperature $ _ . : w wa 1.197(30 e Voltage controlled High transconductance CASE TEMP. +E iS Hee > . . . POINT J . Low input capacitance Reduced drive requirement aso oN | oie * URCE oe Excellent thermal stability Ease of paralleling Drain AL | [022515721 Daan 0.16214.09) Dia, 0.205(5 21) (CASE) 0.15(3.84) 2 HOLES 0.440(11.18) 0 420( 10.67) maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF250/D86FN2 IRF251/D86FM2 UNITS Drain-Source Voitage Voss 200 150 Voits Drain-Gate Voltage, Rgs = 1MQ. VparR 200 150 Volts Continuous Drain Current @ Tc = 25C Ip 30 30 A @ Tc = 100C 19 19 A Pulsed Drain Current lom 120 120 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 150 150 Watts Derate Above 25C 1.2 1.2 w/C Operating and Storage Junction Temperature Range Ty, TstG -5 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Resc 0.83 0.83 C/W Thermal Resistance, Junction to Ambient Raja 30 30 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 145 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC |SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF250/D86FN2 BVpss 200 _ _ Volts (Vag = OV, Ip = 250 uA) IRF251/D86FM2 150 Zero Gate Voltage Drain Current Ipss (Vos = Max Rating, Vag = OV, To = 25C) _ _ 250 LA (Vog = Max Rating, x 0.8, Vag = OV, To = 125C) _ 1000 OAoee poy Current lass _ _ +100 nA on characteristics Gate Threshold Voltage To = 26C | VasctH) 2.0 _ 4.0 Volts (Vps = Vas; Ip = 250 nA) On-State Drain Current (Vag = 10V, Vos = 10V) ID(ON) 30 A Static Drain-Source On-State Resistance (Vag = 10V, Ip = 18A) Rps(ON) _ 0.075 0.085 Ohms Forward Transconductance (Vpg = 10V, Ip = 16A) Ofs 7.2 10 mhos dynamic characteristics Input Capacitance Vas = OV Ciss _ 2800 3000 pF Output Capacitance Vpsg = 25V Coss _ 520 1200 pF Reverse Transfer Capacitance f= 1 MHz Cres _ 120 500 pF switching characteristics* Turn-on Delay Time Vps = 90V ta(on) - 20 _ ns Rise Time Ip = 16A, Vag = 15V tr _ 75 _ ns Turn-off Delay Time Raen = 509, Rag = 12.50 | taoft) _ 90 _ ns Fall Time (Res (equiv.) = 100) tt _ 65 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 30 A Pulsed Source Current ISM _ _ 120 A Diode Forward Voltage _ 1 2 (To = 25C, Vag = OV, Ig = 30A) Vsp 3 0 Volts Reverse Recovery Time trr _ 345 ns (Ig = 380A, dig/dt = 100A/us, To = 125C) Qrr _ 45 uc Pulse Test: Pulse width s 300 ws, duty cycle = 2% 600 200 1 80 80 40 20 7 10 Sf OPERATION IN THIS AREA 6 MAY BE LIMITED BY Rosion; 4 tp. DRAIN CURRENT (AMPERES) Rosion AND Vegan) NORMALIZED SINGLE PULSE To= 26C 2 4 6 810 20 40 60 80100 Vpg- ORAIN-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 200 400 600 1000 146 CONDITIONS: Ros(on) CONDITIONS: Ip = 18 A, Vag = 10V V@si(TH) CONDITIONS: Ip = 250uA, Vos * Vas Rosien) Q 40 80 120 Ty, JUNCTION TEMPERATURE (C) 40 160 TYPICAL NORMALIZED Rygion; AND Vagirn) VS- TEMP.