VS-ST1230C..K Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 1745 A FEATURES * Center amplifying gate * Metal case with ceramic insulator * International standard case K-PUK (A-24) * High profile hockey PUK * Designed and qualified for industrial level * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS * DC motor controls K-PUK (A-24) * Controlled DC power supplies * AC controllers PRIMARY CHARACTERISTICS IT(AV) 1745 A VDRM/VRRM 800 V, 1200 V, 1400 V, 1600 V VTM 1.62 V IGT 100 mA TJ -40 C to +125 C Package K-PUK (A-24) Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t VALUES UNITS 1745 A 55 C 3200 A 25 C 50 Hz 33 500 60 Hz 35 100 50 Hz 5615 60 Hz 5126 VDRM/VRRM 800 to 1600 tq Typical TJ A kA2s V 200 s -40 to +125 C VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST1230C..K VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 100 Revision: 27-Sep-17 Document Number: 94395 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1230C..K Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled Maximum I2t for fusing Maximum I2t for fusing ITSM I2t I2t A 55 (85) C 3200 No voltage reapplied t = 10 ms 100 % VRRM 28 200 t = 8.3 ms reapplied t = 10 ms t = 8.3 ms No voltage reapplied t = 10 ms 100 % VRRM 3971 t = 8.3 ms reapplied 3625 t = 8.3 ms 35 100 Sinusoidal half wave, initial TJ = TJ maximum t = 0.1 to 10 ms, no voltage reapplied 5615 5126 56 150 VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.93 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.02 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.17 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.16 Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.62 VTM Maximum holding current IH Typical latching current IL TJ = 25 C, anode supply 12 V resistive load A 29 500 Low level value of threshold voltage Maximum on-state voltage UNITS 1745 (700) 33 500 t = 10 ms Maximum peak, one-cycle non-repetitive surge current VALUES 600 1000 kA2s kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/s Typical delay time td Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C 1.9 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s 200 s BLOCKING PARAMETER SYMBOL Maximum critical rate of rise of off-state voltage dV/dt Maximum peak reverse and off-state leakage current IRRM, IDRM TEST CONDITIONS VALUES UNITS TJ = TJ maximum linear to 80 % rated VDRM 500 V/s TJ = TJ maximum, rated VDRM/VRRM applied 100 mA Revision: 27-Sep-17 Document Number: 94395 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1230C..K Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM DC gate current required to trigger 16 TJ = TJ maximum, f = 50 Hz, d% = 50 3 IGD DC gate voltage not to trigger VGD UNITS W 3.0 A 20 V 5.0 TJ = -40 C 200 - TJ = 25 C 100 200 50 - Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = -40 C DC gate current not to trigger Max. TJ = TJ maximum, tp 5 ms TJ = 125 C VGT typ. TJ = TJ maximum, tp 5 ms IGT DC gate voltage required to trigger VALUES TEST CONDITIONS TJ = 25 C TJ = 125 C 1.4 - 1.1 3.0 0.9 TJ = TJ maximum Maximum gate current/ voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TEST CONDITIONS TJ -40 to 125 TStg -40 to 150 RthJ-hs Maximum thermal resistance, case to heatsink RthC-hs DC operation single side cooled 0.042 DC operation double side cooled 0.021 DC operation single side cooled 0.006 DC operation double side cooled K/W 0.003 Mounting force, 10 % Approximate weight Case style C See dimensions - link at the end of datasheet 24 500 (2500) N (kg) 425 g K-PUK (A-24) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.003 0.003 0.002 0.002 120 0.004 0.004 0.004 0.004 90 0.005 0.005 0.005 0.005 60 0.007 0.007 0.007 0.007 30 0.012 0.012 0.012 0.012 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 27-Sep-17 Document Number: 94395 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1230C..K Series 130 Vishay Semiconductors ST1230C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 120 110 100 90 Conduction Angle 30 80 60 70 90 60 120 180 50 40 0 200 400 600 800 1000 1200 1400 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) www.vishay.com 130 ST1230C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 120 110 100 90 Conduction Period 80 30 70 60 60 90 50 40 120 30 180 0 ST1230C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 110 100 90 Conduction Period 80 70 60 30 50 60 90 40 120 30 180 DC 20 0 400 800 1200 1600 2000 Fig. 4 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (C) Fig. 1 - Current Ratings Characteristics 120 4000 180 120 90 60 30 3500 3000 2500 RMS Limit 2000 1500 Conduction Angle 1000 ST1230C..K Series T J = 125C 500 0 0 ST1230C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 110 100 90 Conduction Angle 80 70 30 60 60 90 120 50 180 40 30 0 500 1000 1500 2000 800 1200 1600 2000 2400 2500 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (C) Fig. 2 - Current Ratings Characteristics 120 400 Average On-state Current (A) Average On-state Current (A) 130 500 1000 1500 2000 2500 3000 3500 Average On-state Current (A) Average On-state Current (A) 130 DC 20 5000 DC 180 120 90 60 30 4000 3000 RMS Limit 2000 Conduction Period 1000 ST1230C..K Series T J = 125C 0 0 500 1000 1500 2000 2500 3000 3500 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics Revision: 27-Sep-17 Document Number: 94395 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1230C..K Series 30000 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C 28000 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 26000 24000 22000 20000 18000 16000 ST1230C..K Series 14000 1 10 100 34000 32000 30000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated VRRM Reapplied 28000 26000 24000 22000 20000 18000 16000 ST1230C..K Series 14000 12000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 TJ = 25C 1000 TJ = 125C ST1230C..K Series 100 0.5 1 1.5 2 2.5 3 Instantaneous On-state Voltage (V) (K/W) Fig. 9 - On-State Voltage Drop Characteristics 0.1 Transient Thermal Impedance Z thJ-hs Steady State Value R thJ-hs = 0.042 K/W (Single Side Cooled) R thJ-hs = 0.021 K/W (Double Side Cooled) 0.01 (DC Operation) ST1230C..K Series 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 27-Sep-17 Document Number: 94395 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1230C..K Series www.vishay.com 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 s (1) PGM = 16W, tp = 4ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (a) (b) IGD 0.1 0.001 Tj=-40 C VGD Tj=25 C 1 Tj=125 C Instantaneous Gate Voltage (V) 100 Vishay Semiconductors (1) (2) (3) Device: ST1230C..K Series 0.01 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 123 0 C 16 K 1 - 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = converter grade 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - K = PUK case K-PUK (A-24) 8 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) 9 - Critical dV/dt: None = 500 V/s (standard selection) L = 1000 V/s (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95081 Revision: 27-Sep-17 Document Number: 94395 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors K-PUK (A-24) DIMENSIONS in millimeters (inches) Creepage distance: 28.88 (1.137) minimum Strike distance: 17.99 (0.708) minimum 1 (0.04) MIN. 2 places 47.5 (1.87) DIA. MAX. 2 places C G Pin receptable AMP. 60598-1 27.5 (1.08) MAX. Note: A = Anode C = Cathode G = Gate A 67 (2.6) DIA. MAX. 20 5 74.5 (2.9) DIA. MAX. 4.75 (0.2) NOM. 44 (1.73) 2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Revision: 12-Jul-17 Document Number: 95081 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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