AUTOMOTIVE GRADE PD - 96351 AUIRFR9024N AUIRFU9024N Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * HEXFET(R) Power MOSFET D V(BR)DSS RDS(on) max. G S Specifically designed for Automotive applications, this Cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. 0.175 ID -11A D D Description -55V G D S G D S I-Pak AUIRFU9024N D-Pak AUIRFR9024N G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Max. Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V c Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy(Thermally limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt c d c e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Units -11 -8 -44 38 0.30 20 62 -6.6 3.8 -10 A W W/C V mJ A mJ V/ns -55 to + 150 C 300 (1.6mm from case ) Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount) ** Junction-to-Ambient Typ. Max. Units --- --- --- 3.3 50 110 C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 01/19/11 AUIRFR/U9024N Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage Parameter -55 --- --- V Conditions V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- -0.05 --- RDS(on) Static Drain-to-Source On-Resistance --- --- 0.175 VGS = -10V, ID = -6.6A VGS(th) Gate Threshold Voltage -2.0 --- -4.0 V VDS = VGS, ID = -250A gfs IDSS Forward Transconductance 2.5 --- --- S VDS = -25V, ID = -7.2A Drain-to-Source Leakage Current --- --- -25 A VDS = -55V, VGS = 0V --- --- -250 IGSS Gate-to-Source Forward Leakage --- --- 100 Gate-to-Source Reverse Leakage --- --- -100 VGS = 0V, ID = -250A V/C Reference to 25C, ID = -1mA f h VDS = -44V, VGS = 0V, TJ = 150C nA VGS = -20V VGS = 20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time --- tr Rise Time --- 55 --- td(off) Turn-Off Delay Time --- 23 --- tf Fall Time --- 37 --- LD Internal Drain Inductance LS Internal Source Inductance --- --- 19 --- --- 5.1 --- --- 10 VGS = -10V,See Fig 6 and 13 13 --- VDD = -28V --- 4.5 --- --- 7.5 --- Ciss Input Capacitance --- 350 --- Coss Output Capacitance --- 170 --- Crss Reverse Transfer Capacitance --- 92 --- Min. Typ. Max. ID = -7.2A nC VDS = -44V fh ID = -7.2A ns RG = 24 RD = 3.7, See Fig.10 Between lead, nH fh D 6mm (0.25in.) from package G S and center of die contact VGS = 0V pF VDS = -25V = 1.0MHz,see Fig.5 h Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current Units --- --- -11 --- -44 VSD (Body Diode) Diode Forward Voltage --- --- --- -1.6 V trr Reverse Recovery Time --- 47 71 ns Qrr Reverse Recovery Charge --- 84 130 nC ton Forward Turn-On Time c Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 2.8mH RG = 25, IAS = -6.6A (See Figure 12) ISD -6.6A, di/dt -240A/s, VDD V(BR)DSS, TJ 150C Conditions MOSFET symbol A D showing the integral reverse G p-n junction diode. TJ = 25C, IS = -7.2A, VGS = 0V TJ = 25C, IF = -7.2A di/dt = 100A/s S f fh Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Pulse width 300s; duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. Uses IRF9Z24N data and test conditions. ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com AUIRFR/U9024N Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level ESD RoHS Compliant Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D PAK MSL1 I-PAK N/A Machine Model Class M2(+/-150V ) AEC-Q101-002 Human Body Model Class H1A(+/-500V ) AEC-Q101-001 Charged Device Model Class C5(+/-2000V ) AEC-Q101-005 Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage www.irf.com 3 AUIRFR/U9024N 4 www.irf.com AUIRFR/U9024N www.irf.com 5 AUIRFR/U9024N 6 www.irf.com AUIRFR/U9024N www.irf.com 7 AUIRFR/U9024N Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + + * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14 For P Channel HEXFETS 8 www.irf.com AUIRFR/U9024N D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information Part Number AUFR9024N YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRFR/U9024N I-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information Part Number AUFU9024N YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRFR/U9024N D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. www.irf.com 11 AUIRFR/U9024N Ordering Information Base part Package Type AUIRFR9024N DPak AUIRFU9024N IPak 12 Complete Part Number Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Tube Quantity 75 2000 3000 3000 75 AUIRFR9024N AUIRFR9024NTR AUIRFR9024NTRL AUIRFR9024NTRR AUIRFU9024N www.irf.com AUIRFR/U9024N IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. 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Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 13