AUIRFR9024N
AUIRFU9024N
HEXFET® Power MOSFET
01/19/11
www.irf.com 1
D-Pak
AUIRFR9024N
GDS
Gate Drain Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V
(BR)DSS
-55V
R
DS(on)
max. 0.175Ω
I
D
-11A
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ -10V A
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy(Thermally limited)
d
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
c
mJ
dv/dt Peak Diode Recovery dv/dt
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 3.3
R
θJA
Junction-to-Ambient (PCB mount) ** ––– 50 °C/W
R
θJA
Junction-to-Ambient ––– 110
-55 to + 150
300 (1.6mm from case )
38
0.30
± 20
Max.
-11
-8
-44
-10
3.8
62
-6.6
S
D
G
I-Pak
AUIRFU9024N
S
D
G
D
D
S
D
G
l
Advanced Planar Technology
l
Low On-Resistance
lP-Channel
l
Dynamic dV/dT Rating
l
150°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Features
Specifically designed for Automotive applications, this
Cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
Description
AUTOMOTIVE GRADE PD - 96351
AUIRFR/U9024N
2www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 2.8mH
RG = 25Ω, IAS = -6.6A (See Figure 12)
ISD ≤ -6.6A, di/dt ≤ -240A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
S
D
G
S
D
G
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V
∆V(BR)DSS
/
∆TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.175 Ω
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V
gfs Forward Transconductance 2.5 ––– ––– S
IDSS Drain-to-Source Leakage Current ––– ––– -25 µA
––– ––– -250
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
QgTotal Gate Charge ––– ––– 19
Qgs Gate-to-Source Charge ––– ––– 5.1 nC
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 10
td(on) Turn-On Delay Time ––– 13 –––
trRise Time ––– 55 –––
td(off) Turn-Off Delay Time ––– 23 ––– ns
tfFall Time ––– 37 –––
LDInternal Drain Inductance Between lead,
nH 6mm (0.25in.)
LSInternal Source Inductance from package
and center of die contact
Ciss Input Capacitance ––– 350 –––
Coss Output Capacitance ––– 170 –––
Crss Reverse Transfer Capacitance ––– 92 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode) A
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– -1.6 V
t
rr
Reverse Recovery Time ––– 47 71 ns
Q
rr
Reverse Recovery Charge ––– 84 130 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
pF
–––
–––
–––
–––
-11
-44
––– –––
––––––
4.5
7.5
VGS = -10V,See Fig 6 and 13
fh
VDD = -28V
ID = -7.2A
RG = 24 Ω
T
J
= 25°C, I
S
= -7.2A, V
GS
= 0V
f
T
J
= 25°C, I
F
= -7.2A
di/dt = 100A/
µ
s
fh
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -6.6A
f
VDS = VGS, ID = -250µA
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = -25V, ID = -7.2A
h
ID = -7.2A
VDS = -44V
Conditions
RD = 3.7Ω, See Fig.10
fh
VGS = 0V
VDS = -25V
ƒ = 1.0MHz,see Fig.5
h
VGS = -20V
VGS = 20V
Pulse width ≤ 300µs; duty cycle ≤ 2%.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
Uses IRF9Z24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
AUIRFR/U9024N
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Qualification Information
†
D
PAK MSL1
I-PAK N/A
RoHS Compliant Yes
ESD
Machine Model Class M2(+/-150V )
†††
AEC-Q101-002
Human Body Model Class H1A(+/-500V )
†††
AEC-Q101-001
Charged Device
Model
Class C5(+/-2000V )
†††
AEC-Q101-005
Moisture Sensitivity Level
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
AUIRFR/U9024N
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AUIRFR/U9024N
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AUIRFR/U9024N
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AUIRFR/U9024N
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AUIRFR/U9024N
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Peak Diode Recovery dv/dt Test Circuit
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14 For P Channel HEXFETS
AUIRFR/U9024N
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUFR9024N
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRFR/U9024N
10 www.irf.com
I-Pak (TO-251AA) Part Marking Information
I-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUFU9024N
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRFR/U9024N
www.irf.com 11
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
AUIRFR/U9024N
12 www.irf.com
Ordering Information
Base part Package Type Complete Part Number
Form Quantity
AUIRFR9024N DPak Tube 75 AUIRFR9024N
Tape and Reel 2000 AUIRFR9024NTR
Tape and Reel Left 3000 AUIRFR9024NTRL
Tape and Reel Right 3000 AUIRFR9024NTRR
AUIRFU9024N IPak Tube 75 AUIRFU9024N
Standard Pack
AUIRFR/U9024N
www.irf.com 13
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