FDH3595
FDH3595
DO-35
High Conductance Low Leakage Diode
Sourced from Process 1M. See MMBD1501-1505 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
WIV Workin g Inverse Voltage 125 V
IOAverage Rectified Current 200 mA
IFDC Forwa rd Current 500 mA
ifRecurrent Peak Forward Current 600 mA
if(surge) Peak Forward Surge Curren t
Pulse width = 1.0 second
Pulse width = 1.0 microsecond 1.0
4.0 A
A
Tstg Storage Temperature Range -65 to +175 °C
TJOperating Junction Temperature 175 °C
Symbol Characteristic Max Units
MMBD7000*
PDTotal D evice Dissipation
Derate above 25°C500
3.33 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 300 °C/W
Discrete POWER & Signal
Technologies
ã1997 Fairchild Semiconductor Corporation
FDH3595
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
BVBreakdown Voltage IR = 100
µ
A150 V
IRReverse Voltage Leakage Current VR = 125 V
VR = 30 V, TA = 125°C
VR = 125 V, TA = 125°C
VR = 125 V, TA = 150°C
1.0
300
500
3.0
nA
nA
nA
µ
A
VFForward Vol tage IF = 1.0 mA
IF = 5.0 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
520
600
650
750
790
0.83
680
760
800
890
920
1.0
mV
mV
mV
mV
mV
V
CTDiode Capacitance VR = 0, f = 1.0 MHz 8.0 pF
High Conductance Low Leakage Diode
(continued)
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
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As used herein:
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SuperSOT™-3
SuperSOT™-6
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This datasheet contains the design specifications for
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