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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS INTEGRATED CIRCUIT PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The PD44165082A-A is a 2,097,152-word by 8-bit, the PD44165092A-A is a 2,097,152-word by 9-bit, the PD44165182A-A is a 1,048,576-word by 18-bit and the PD44165362A-A is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The PD44165082A-A, PD44165092A-A, PD44165182A-A and PD44165362A-A integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and K#. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin PLASTIC BGA. Features * 1.8 0.1 V power supply * 165-pin PLASTIC BGA (13 x 15) * HSTL interface * PLL circuitry for wide output data valid window and future frequency scaling * Separate independent read and write data ports with concurrent transactions * 100% bus utilization DDR READ and WRITE operation * Two-tick burst for low DDR transaction size * Two input clocks (K and K#) for precise DDR timing at clock rising edges only * Two output clocks (C and C#) for precise flight time and clock skew matching-clock and data delivered together to receiving device * Internally self-timed write control * Clock-stop capability. Normal operation is restored in 1,024 cycles after clock is resumed. * User programmable impedance output * Fast clock cycle time : 4.0 ns (250 MHz), 5.0 ns (200 MHz) * Simple control logic for easy depth expansion * JTAG boundary scan * Operating ambient temperature : Commercial TA = 0 to +70C (-E40, -E50) Industrial TA = -40 to +85C (-E40Y, -E50Y) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. M19869EJ1V0DS00 (1st edition) Date Published July 2009 Printed in Japan 2009 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Ordering Information (1) Operating Ambient Temperature TA = 0 to +70C Part number Cycle Clock Organization Time Frequency (word x bit) ns MHz PD44165082AF5-E40-EQ2-A 4.0 250 PD44165082AF5-E50-EQ2-A 5.0 200 PD44165092AF5-E40-EQ2-A 4.0 250 PD44165092AF5-E50-EQ2-A 5.0 200 PD44165182AF5-E40-EQ2-A 4.0 250 PD44165182AF5-E50-EQ2-A 5.0 200 PD44165362AF5-E40-EQ2-A 4.0 250 PD44165362AF5-E50-EQ2-A 5.0 200 Package Ambient Temperature 2M x 8-bit 165-pin PLASTIC Commercial BGA (13 x 15) (TA = 0 to +70C) 2M x 9-bit Lead-free 1M x 18-bit 512K x 36-bit Remarks 1. QDR Consortium standard package size is 13 x 15 and 15 x 17. The footprint is commonly used. 2. Products with -A at the end of the part number are lead-free products. 2 Operating Data Sheet M19869EJ1V0DS PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A (2) Operating Ambient Temperature TA = -40 to +85C Part number Cycle Clock Organization Time Frequency (word x bit) ns MHz PD44165082AF5-E40Y-EQ2-A 4.0 250 PD44165082AF5-E50Y-EQ2-A 5.0 200 PD44165092AF5-E40Y-EQ2-A 4.0 250 PD44165092AF5-E50Y-EQ2-A 5.0 200 PD44165182AF5-E40Y-EQ2-A 4.0 250 PD44165182AF5-E50Y-EQ2-A 5.0 200 Package Operating Ambient Temperature 2M x 8-bit 165-pin PLASTIC Industrial BGA (13 x 15) (TA = -40 to +85C) 2M x 9-bit Lead-free 1M x 18-bit Remarks 1. QDR Consortium standard package size is 13 x 15 and 15 x 17. The footprint is commonly used. 2. Products with -A at the end of the part number are lead-free products. Data Sheet M19869EJ1V0DS 3 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Pin Configurations 165-pin PLASTIC BGA (13 x 15) (Top View) [PD44165082A-A] 2M x 8-bit 1 2 3 4 5 6 7 8 9 10 11 A CQ# VSS A W# NW1# K# NC R# A VSS CQ B NC NC NC A NC K NW0# A NC NC Q3 C NC NC NC VSS A A A VSS NC NC D3 D NC D4 NC VSS VSS VSS VSS VSS NC NC NC E NC NC Q4 VDDQ VSS VSS VSS VDDQ NC D2 Q2 F NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC G NC D5 Q5 VDDQ VDD VSS VDD VDDQ NC NC NC H DLL# VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC NC VDDQ VDD VSS VDD VDDQ NC Q1 D1 K NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC L NC Q6 D6 VDDQ VSS VSS VSS VDDQ NC NC Q0 M NC NC NC VSS VSS VSS VSS VSS NC NC D0 N NC D7 NC VSS A A A VSS NC NC NC P NC NC Q7 A A C A A NC NC NC R TDO TCK A A A C# A A A TMS TDI A : Address inputs DLL# : DLL/PLL disable D0 to D7 : Data inputs TMS : IEEE 1149.1 Test input Q0 to Q7 : Data outputs TDI : IEEE 1149.1 Test input R# : Read input TCK : IEEE 1149.1 Clock input W# : Write input TDO : IEEE 1149.1 Test output NW0#, NW1# : Nibble Write data select VREF : HSTL input reference input K, K# : Input clock VDD : Power Supply C, C# : Output clock VDDQ : Power Supply CQ, CQ# : Echo clock VSS : Ground ZQ : Output impedance matching NC : No connection Remarks 1. xxx# indicates active LOW signal. 2. Refer to Package Drawing for the index mark. 3. 2A, 7A and 10A are expansion addresses: 10A for 36Mb, 2A for 72Mb and 7A for 144Mb. 2A and 10A of this product can also be used as NC. 4 Data Sheet M19869EJ1V0DS PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A 165-pin PLASTIC BGA (13 x 15) (Top View) [PD44165092A-A] 2M x 9-bit 1 2 3 4 5 6 7 8 9 10 11 A CQ# VSS A W# NC K# NC R# A VSS CQ B NC NC NC A NC K BW0# A NC NC Q4 C NC NC NC VSS A A A VSS NC NC D4 D NC D5 NC VSS VSS VSS VSS VSS NC NC NC E NC NC Q5 VDDQ VSS VSS VSS VDDQ NC D3 Q3 F NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC G NC D6 Q6 VDDQ VDD VSS VDD VDDQ NC NC NC H DLL# VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC NC VDDQ VDD VSS VDD VDDQ NC Q2 D2 K NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC L NC Q7 D7 VDDQ VSS VSS VSS VDDQ NC NC Q1 M NC NC NC VSS VSS VSS VSS VSS NC NC D1 N NC D8 NC VSS A A A VSS NC NC NC P NC NC Q8 A A C A A NC D0 Q0 R TDO TCK A A A C# A A A TMS TDI A : Address inputs DLL# : DLL/PLL disable D0 to D8 : Data inputs TMS : IEEE 1149.1 Test input Q0 to Q8 : Data outputs TDI : IEEE 1149.1 Test input R# : Read input TCK : IEEE 1149.1 Clock input W# : Write input TDO : IEEE 1149.1 Test output BW0# : Byte Write data select VREF : HSTL input reference input K, K# : Input clock VDD : Power Supply C, C# : Output clock VDDQ : Power Supply CQ, CQ# : Echo clock VSS : Ground ZQ : Output impedance matching NC : No connection Remarks 1. xxx# indicates active LOW signal. 2. Refer to Package Drawing for the index mark. 3. 2A, 7A and 10A are expansion addresses: 10A for 36Mb, 2A for 72Mb and 7A for 144Mb. 2A and 10A of this product can also be used as NC. Data Sheet M19869EJ1V0DS 5 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A 165-pin PLASTIC BGA (13 x 15) (Top View) [PD44165182A-A] 1M x 18-bit 1 2 3 4 5 6 7 8 9 10 11 A CQ# VSS NC W# BW1# K# NC R# A VSS CQ B NC Q9 D9 A NC K BW0# A NC NC Q8 C NC NC D10 VSS A A A VSS NC Q7 D8 D NC D11 Q10 VSS VSS VSS VSS VSS NC NC D7 E NC NC Q11 VDDQ VSS VSS VSS VDDQ NC D6 Q6 F NC Q12 D12 VDDQ VDD VSS VDD VDDQ NC NC Q5 G NC D13 Q13 VDDQ VDD VSS VDD VDDQ NC NC D5 H DLL# VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC D14 VDDQ VDD VSS VDD VDDQ NC Q4 D4 K NC NC Q14 VDDQ VDD VSS VDD VDDQ NC D3 Q3 L NC Q15 D15 VDDQ VSS VSS VSS VDDQ NC NC Q2 M NC NC D16 VSS VSS VSS VSS VSS NC Q1 D2 N NC D17 Q16 VSS A A A VSS NC NC D1 P NC NC Q17 A A C A A NC D0 Q0 R TDO TCK A A A C# A A A TMS TDI A : Address inputs DLL# : DLL/PLL disable D0 to D17 : Data inputs TMS : IEEE 1149.1 Test input Q0 to Q17 : Data outputs TDI : IEEE 1149.1 Test input R# : Read input TCK : IEEE 1149.1 Clock input W# : Write input TDO : IEEE 1149.1 Test output BW0#, BW1# : Byte Write data select VREF : HSTL input reference input K, K# : Input clock VDD : Power Supply C, C# : Output clock VDDQ : Power Supply CQ, CQ# : Echo clock VSS : Ground ZQ : Output impedance matching NC : No connection Remarks 1. xxx# indicates active LOW signal. 2. Refer to Package Drawing for the index mark. 3. 2A, 3A and 10A are expansion addresses: 3A for 36Mb, 10A for 72Mb and 2A for 144Mb. 2A and 10A of this product can also be used as NC. 6 Data Sheet M19869EJ1V0DS PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A 165-pin PLASTIC BGA (13 x 15) (Top View) [PD44165362A-A] 512K x 36-bit 1 2 3 4 5 6 7 8 9 10 11 A CQ# VSS NC W# BW2# K# BW1# R# NC VSS CQ B Q27 Q18 D18 A BW3# K BW0# A D17 Q17 Q8 C D27 Q28 D19 VSS A A A VSS D16 Q7 D8 D D28 D20 Q19 VSS VSS VSS VSS VSS Q16 D15 D7 E Q29 D29 Q20 VDDQ VSS VSS VSS VDDQ Q15 D6 Q6 F Q30 Q21 D21 VDDQ VDD VSS VDD VDDQ D14 Q14 Q5 G D30 D22 Q22 VDDQ VDD VSS VDD VDDQ Q13 D13 D5 H DLL# VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J D31 Q31 D23 VDDQ VDD VSS VDD VDDQ D12 Q4 D4 K Q32 D32 Q23 VDDQ VDD VSS VDD VDDQ Q12 D3 Q3 L Q33 Q24 D24 VDDQ VSS VSS VSS VDDQ D11 Q11 Q2 M D33 Q34 D25 VSS VSS VSS VSS VSS D10 Q1 D2 N D34 D26 Q25 VSS A A A VSS Q10 D9 D1 P Q35 D35 Q26 A A C A A Q9 D0 Q0 R TDO TCK A A A C# A A A TMS TDI A : Address inputs DLL# : DLL/PLL disable D0 to D35 : Data inputs TMS : IEEE 1149.1 Test input Q0 to Q35 : Data outputs TDI : IEEE 1149.1 Test input R# : Read input TCK : IEEE 1149.1 Clock input W# : Write input TDO : IEEE 1149.1 Test output BW0# to BW3# : Byte Write data select VREF : HSTL input reference input K, K# : Input clock VDD : Power Supply C, C# : Output clock VDDQ : Power Supply CQ, CQ# : Echo clock VSS : Ground ZQ : Output impedance matching NC : No connection Remarks 1. xxx# indicates active LOW signal. 2. Refer to Package Drawing for the index mark. 3. 3A, 9A and 10A are expansion addresses: 9A for 36Mb, 3A for 72Mb and 10A for 144Mb. 2A and 10A of this product can also be used as NC. Data Sheet M19869EJ1V0DS 7 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Pin Identification Symbol A D0 to Dxx Q0 to Qxx R# W# BWx# NWx# K, K# C, C# 8 (1/2) Description Synchronous Address Inputs: These inputs are registered and must meet the setup and hold times around the rising edge of K for READ cycles and must meet the setup and hold times around the rising edge of K# for WRITE cycles. All transactions operate on a burst of two words (one clock period of bus activity). These inputs are ignored when device is deselected, i.e., NOP (R# = W# = HIGH). Synchronous Data Inputs: Input data must meet setup and hold times around the rising edges of K and K# during WRITE operations. See Pin Configurations for ball site location of individual signals. x8 device uses D0 to D7. x9 device uses D0 to D8. x18 device uses D0 to D17. x36 device uses D0 to D35. Synchronous Data Outputs: Output data is synchronized to the respective C and C# or to K and K# rising edges if C and C# are tied HIGH. Data is output in synchronization with C and C# (or K and K#), depending on the R# command. See Pin Configurations for ball site location of individual signals. x8 device uses Q0 to Q7. x9 device uses Q0 to Q8. x18 device uses Q0 to Q17. x36 device uses Q0 to Q35. Synchronous Read: When LOW this input causes the address inputs to be registered and a READ cycle to be initiated. This input must meet setup and hold times around the rising edge of K. Synchronous Write: When LOW this input causes the address inputs to be registered and a WRITE cycle to be initiated. This input must meet setup and hold times around the rising edge of K. Synchronous Byte Writes (Nibble Writes on x8): When LOW these inputs cause their respective byte or nibble to be registered and written during WRITE cycles. These signals must meet setup and hold times around the rising edges of K and K# for each of the two rising edges comprising the WRITE cycle. See Pin Configurations for signal to data relationships. x8 device uses NW0#, NW1#. x9 device uses BW0#. x18 device uses BW0#, BW1#. x36 device uses BW0# to BW3#. See Byte Write Operation for relation between BWx#, NWx# and Dxx. Input Clock: A READ address and control input signal are input in synchronization with the rising edge of K and a WRITE address is input in synchronization with the rising edge of K#. Input data is input in synchronization with the rising edge of K and K#. K# is ideally 180 degrees out of phase with K. All synchronous inputs must meet setup and hold times around the clock rising edges. Output Clock: This clock pair provides a user controlled means of tuning device output data. The rising edge of C# is used as the output timing reference for first output data. The rising edge of C is used as the output reference for second output data. Ideally, C# is 180 degrees out of phase with C. When use of K and K# as the reference instead of C and C#, then fixed C and C# to HIGH. Operation cannot be guaranteed unless C and C# are fixed to HIGH (i.e. toggle of C and C#). Data Sheet M19869EJ1V0DS PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A (2/2) Symbol CQ, CQ# ZQ DLL# Description Synchronous Echo Clock Outputs. The rising edges of these outputs are tightly matched to the synchronous data outputs and can be used as a data valid indication. These signals run freely and do not stop when Q tristates. If C and C# are stopped (if K and K# are stopped in the single clock mode), CQ and CQ# will also stop. Output Impedance Matching Input: This input is used to tune the device outputs to the system data bus impedance. Q, CQ and CQ# output impedance are set to 0.2 x RQ, where RQ is a resistor from this bump to ground. The output impedance can be minimized by directly connect ZQ to VDDQ. This pin cannot be connected directly to GND or left unconnected. The output impedance is adjusted every 1,024 cycles upon power-up to account for drifts in supply voltage and temperature. After replacement for a resistor, the new output impedance is reset by implementing power-on sequence. DLL/PLL Disable: When debugging the system or board, the operation can be performed at a clock frequency slower than TKHKH (MAX.) without the DLL/PLL circuit being used, if DLL# = LOW. The AC/DC characteristics cannot be guaranteed. For normal operation, DLL# must be HIGH and it can be connected to VDDQ through a 10 k or less resistor. TMS TDI TCK IEEE 1149.1 Test Inputs: 1.8 V I/O level. These balls may be left Not Connected if the JTAG function is not used in the circuit. IEEE 1149.1 Clock Input: 1.8 V I/O level. This pin must be tied to VSS if the JTAG function is not used in the circuit. TDO IEEE 1149.1 Test Output: 1.8 V I/O level. VREF HSTL Input Reference Voltage: Nominally VDDQ/2. Provides a reference voltage for the input buffers. VDD Power Supply: 1.8 V nominal. See Recommended DC Operating Conditions and DC Characteristics for range. Power Supply: Isolated Output Buffer Supply. Nominally 1.5 V. 1.8 V is also permissible. See Recommended DC Operating Conditions and DC Characteristics for range. VDDQ VSS Power Supply: Ground NC No Connect: These signals are not connected internally. Data Sheet M19869EJ1V0DS 9 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Block Diagram [PD44165082A-A] 20 ADDRESS R# ADDRESS W# 20 REGISTRY & LOGIC K K# W# NW0# R# ARRAY 16 MUX 16 OUTPUT BUFFER & LOGIC MEMORY OUTPUT SELECT REGISTRY 20 2 x 16 OUTPUT REGISTER 16 SENSE AMPS DATA WRITE DRIVER D0 to D7 8 WRITE REGISTER NW1# 8 Q0 to Q7 2 CQ, CQ# K K K# K C, C# OR K, K# [PD44165092A-A] 20 ADDRESS R# ADDRESS W# 20 REGISTRY & LOGIC K K# W# BW0# 18 10 9 Q0 to Q8 2 CQ, CQ# K K# OUTPUT BUFFER R# ARRAY 18 MUX OUTPUT SELECT & LOGIC MEMORY OUTPUT REGISTER REGISTRY 20 2 x 18 SENSE AMPS 18 WRITE DRIVER D0 to D8 DATA WRITE REGISTER 9 K K Data Sheet M19869EJ1V0DS C, C# OR K, K# PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A [PD44165182A-A] 19 ADDRESS R# ADDRESS W# 19 REGISTRY & LOGIC K K# W# BW0# R# 36 OUTPUT BUFFER ARRAY 36 MUX OUTPUT SELECT & LOGIC MEMORY OUTPUT REGISTER REGISTRY D0 to D17 19 2 x 36 SENSE AMPS 36 WRITE DRIVER DATA 18 WRITE REGISTER BW1# 18 Q0 to Q17 2 CQ, CQ# K K K# K C, C# OR K, #K [PD44165362A-A] 18 ADDRESS R# ADDRESS W# 18 REGISTRY & LOGIC K K# W# 72 OUTPUT BUFFER ARRAY 72 MUX OUTPUT SELECT & LOGIC MEMORY OUTPUT REGISTER REGISTRY 18 2 x 72 SENSE AMPS 36 72 WRITE DRIVER D0 to D35 DATA WRITE REGISTER BW0# BW1# BW2# BW3# 36 Q0 to Q35 2 CQ, CQ# R# K K# K K Data Sheet M19869EJ1V0DS C, C# OR K, K# 11 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Power-on Sequence The following timing charts show the recommended power-on sequence, i.e., when starting the clock after VDD/VDDQ stable and when starting the clock before VDD/VDDQ stable. 1. Clock starts after VDD/VDDQ stable The clock is supplied from a controller. (a) VDD/VDDQ VDD/VDDQ Stable (< 0.1 V DC per 50 ns) DLL# Fix HIGH (or tied to VDDQ) 20 ns (MIN.) Clock Clock Start Note 1,024 cycles or more Stable Clock Normal Operation Start Note Input a stable clock from the start. (b) VDD/VDDQ VDD/VDDQ Stable (< 0.1 V DC per 50 ns) DLL# Switched to HIGH after Clock is stable. Clock Unstable Clock (level, frequency) 1,024 cycles or more Stable Clock Normal Operation Start Clock Start (c) VDD/VDDQ VDD/VDDQ Stable (< 0.1 V DC per 50 ns) DLL# Fix HIGH (or tied to VDDQ) Clock Unstable Clock (level, frequency) 30 ns. (MIN.) Clock Stop Clock Start 12 Data Sheet M19869EJ1V0DS 1,024 cycles or more Stable Clock Normal Operation Start PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A 2. Clock starts before VDD/VDDQ stable The clock is supplied from a clock generator. (a) VDD/VDDQ VDD/VDDQ Stable (< 0.1 V DC per 50 ns) DLL# Fix HIGH (or tied to VDDQ) Clock Unstable Clock (level, frequency) 30 ns. (MIN.) Clock Stop 1,024 cycles or more Stable Clock Normal Operation Start Clock Start (b) VDD/VDDQ VDD/VDDQ Stable (< 0.1 V DC per 50 ns) HIGH or LOW 30 ns (MIN.) DLL# LOW DLL# Switched to HIGH after Clock is stable. Clock Unstable Clock (level, frequency) Clock keep running Clock Start Data Sheet M19869EJ1V0DS 1,024 cycles or more Stable Clock Normal Operation Start 13 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Truth Table Operation WRITE cycle CLK R# W# D or Q LH X L Data in Load address, input write data on Input data DA (A+0) DA (A+1) consecutive K and K# rising edge Input clock K( t ) K#( t ) LH READ cycle L X Data out Load address, output data on Output data QA (A+0) QA (A+1) consecutive C and #C rising edge Output clock C#(t+1) C(t+2) NOP (No operation) Clock stop LH H H D = X, Q = High-Z Stopped X X Previous state Remarks 1. H : HIGH, L : LOW, x : don't care, : rising edge. 2. Data inputs are registered at K and K# rising edges. Data outputs are delivered at C and C# rising edges except if C and C# are HIGH then Data outputs are delivered at K and K# rising edges. 3. All control inputs in the truth table must meet setup/hold times around the rising edge (LOW to HIGH) of K. All control inputs are registered during the rising edge of K. 4. This device contains circuitry that ensure the outputs to be in high impedance during power-up. 5. Refer to state diagram and timing diagrams for clarification. 6. It is recommended that K = K# = C = C# when clock is stopped. This is not essential but permits most rapid restart by overcoming transmission line charging symmetrically. 14 Data Sheet M19869EJ1V0DS PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Byte Write Operation [PD44165082A-A] Operation Write D0 to D7 Write D0 to D3 Write D4 to D7 Write nothing K K# NW0# NW1# LH - 0 0 - LH 0 0 LH - 0 1 - LH 0 1 LH - 1 0 - LH 1 0 LH - 1 1 - LH 1 1 Remarks 1. H : HIGH, L : LOW, : rising edge. 2. Assumes a WRITE cycle was initiated. NW0# and NW1# can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied. [PD44165092A-A] K K# BW0# Write D0 to D8 Operation LH - 0 - LH 0 Write nothing LH - 1 - LH 1 Remarks 1. H : HIGH, L : LOW, : rising edge. 2. Assumes a WRITE cycle was initiated. BW0# can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied. [PD44165182A-A] K K# BW0# BW1# Write D0 to D17 Operation LH - 0 0 - LH 0 0 Write D0 to D8 LH - 0 1 - LH 0 1 Write D9 to D17 LH - 1 0 - LH 1 0 Write nothing LH - 1 1 - LH 1 1 Remarks 1. H : HIGH, L : LOW, : rising edge. 2. Assumes a WRITE cycle was initiated. BW0# and BW1# can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied. Data Sheet M19869EJ1V0DS 15 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A [PD44165362A-A] K K# BW0# BW1# BW2# BW3# Write D0 to D35 Operation LH - 0 0 0 0 - LH 0 0 0 0 Write D0 to D8 LH - 0 1 1 1 - LH 0 1 1 1 Write D9 to D17 LH - 1 0 1 1 - LH 1 0 1 1 LH - 1 1 0 1 - LH 1 1 0 1 LH - 1 1 1 0 - LH 1 1 1 0 LH - 1 1 1 1 - LH 1 1 1 1 Write D18 to D26 Write D27 to D35 Write nothing Remarks 1. H : HIGH, L : LOW, : rising edge. 2. Assumes a WRITE cycle was initiated. BW0# to BW3# can be altered for any portion of the BURST WRITE operation provided that the setup and hold requirements are satisfied. 16 Data Sheet M19869EJ1V0DS PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Bus Cycle State Diagram LOAD NEW WRITE ADDRESS AT K# Always LOAD NEW READ ADDRESS R# = LOW W# = LOW WRITE DOUBLE AT K# Always READ DOUBLE R# = LOW W# = LOW W# = HIGH R# = HIGH W# = HIGH WRITE PORT NOP R# = HIGH Supply voltage provided Power UP Supply voltage provided READ PORT NOP R_Init = 0 Remarks 1. The address is concatenated with 1 additional internal LSB to facilitate burst operation. The address order is always fixed as: xxx...xxx+0, xxx...xxx+1. Bus cycle is terminated at the end of this sequence (burst count = 2). 2. Read and write state machines can be active simultaneously. 3. State machine control timing sequence is controlled by K. Data Sheet M19869EJ1V0DS 17 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Electrical Specifications Absolute Maximum Ratings Parameter Supply voltage Symbol Conditions MIN. TYP. MAX. Unit VDD -0.5 +2.5 V VDDQ -0.5 VDD V Input voltage VIN -0.5 VDD + 0.5 (2.5 V MAX.) V Input / Output voltage VI/O -0.5 VDDQ + 0.5 (2.5 V MAX.) V Operating ambient temperature TA 0 +70 C -40 +85 -55 +125 Output supply voltage Commercial Industrial Storage temperature Tstg C Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended DC Operating Conditions Parameter Supply voltage Symbol Conditions MIN. TYP. MAX. Unit Note VDD 1.7 1.9 V Output supply voltage VDDQ 1.4 VDD V 1 Input HIGH voltage VIH (DC) VREF + 0.1 VDDQ + 0.3 V 1, 2 Input LOW voltage VIL (DC) -0.3 VREF - 0.1 V 1, 2 Clock input voltage VIN -0.3 VDDQ + 0.3 V 1, 2 Reference voltage VREF 0.68 0.95 V MAX. Unit Note Notes 1. During normal operation, VDDQ must not exceed VDD. 2. Power-up: VIH VDDQ + 0.3 V and VDD 1.7 V and VDDQ 1.4 V for t 200 ms Recommended AC Operating Conditions Parameter Symbol Conditions MIN. TYP. Input HIGH voltage VIH (AC) VREF + 0.2 - V 1 Input LOW voltage VIL (AC) - VREF - 0.2 V 1 Note 1. Overshoot: VIH (AC) VDD + 0.7 V (2.5 V MAX.) for t TKHKH/2 Undershoot: VIL (AC) - 0.5 V for t TKHKH/2 Control input signals may not have pulse widths less than TKHKL (MIN.) or operate at cycle rates less than TKHKH (MIN.). 18 Data Sheet M19869EJ1V0DS PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A DC Characteristics (VDD = 1.8 0.1 V) Parameter Symbol Test condition MIN. TYP. MAX. x8, x9 x18 Unit Note x36 Input leakage current ILI -2 - +2 A I/O leakage current ILO -2 - +2 A Operating supply IDD Commercial -E40 530 640 850 current (TA = 0 to +70C) -E50 460 550 710 (Read cycle/ Industrial -E40Y 570 660 - Write cycle) (TA = -40 to +85C) -E50Y 490 570 - Commercial -E40 290 290 290 current (TA = 0 to +70C) -E50 270 270 270 (NOP) Industrial -E40Y 310 310 - (TA = -40 to +85C) -E50Y 290 290 - Standby supply ISB1 Note1 Note1 Output HIGH voltage VOH(Low) |IOH| 0.1 mA VOH Note2 Output LOW voltage VOL(Low) IOL 0.1 mA VOL Note3 VDDQ - 0.2 - VDDQ VDDQ/2-0.12 - VDDQ/2+0.12 VSS - 0.2 VDDQ/2-0.12 - VDDQ/2+0.12 mA mA V 4, 5 4, 5 V 4, 5 4, 5 Notes 1. VIN VIL or VIN VIH, II/O = 0 mA, Cycle = MAX. 2. Outputs are impedance-controlled. | IOH | = (VDDQ/2)/(RQ/5) 15% for values of 175 RQ 350 . 3. Outputs are impedance-controlled. IOL = (VDDQ/2)/(RQ/5) 15% for values of 175 RQ 350 . 4. AC load current is higher than the shown DC values. 5. HSTL outputs meet JEDEC HSTL Class I standards. Capacitance (TA = 25C, f = 1 MHz) Parameter Symbol Test conditions MIN. TYP. MAX. Unit Input capacitance (Address, Control) CIN VIN = 0 V 4 5 pF Input / Output capacitance CI/O VI/O = 0 V 6 7 pF Cclk Vclk = 0 V 5 6 pF (D, Q, CQ, CQ#) Clock Input capacitance Remark These parameters are periodically sampled and not 100% tested. Thermal Resistance Parameter Thermal resistance Symbol Test conditions MIN. TYP. MAX. Unit j-a 25.1 C/W j-c 2.8 C/W (junction - ambient) Thermal resistance (junction - case) Remark These parameters are simulated under the condition of air flow velocity = 1 m/s. Data Sheet M19869EJ1V0DS 19 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A AC Characteristics (VDD = 1.8 0.1 V) AC Test Conditions (VDD = 1.8 0.1 V, VDDQ = 1.4 V to VDD) Input waveform (Rise / Fall time 0.3 ns) 1.25 V 0.75 V Test Points 0.75 V 0.25 V Output waveform Test Points VDDQ / 2 VDDQ / 2 Output load condition Figure 1. External load at test VDDQ / 2 0.75 V 50 VREF ZO = 50 SRAM 250 ZQ 20 Data Sheet M19869EJ1V0DS PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Read and Write Cycle Parameter Symbol -E40, -E40Y -E50, -E50Y (250 MHz) (200 MHz) Unit Note MIN. MAX. MIN. MAX. 4.0 8.4 5.0 8.4 ns 1 2 Clock Average Clock cycle time (K, K#, C, C#) TKHKH Clock phase jitter (K, K#, C, C#) TKC var - 0.2 - 0.2 ns Clock HIGH time (K, K#, C, C#) TKHKL 1.6 - 2.0 - ns Clock LOW time (K, K#, C, C#) TKLKH 1.6 - 2.0 - ns Clock HIGH to Clock# HIGH (KK#, CC#) Clock# HIGH to Clock HIGH (K#K, C#C) TKHK#H 1.8 - 2.2 - ns TK#HKH 1.8 - 2.2 - ns Clock to data clock 200 to 250 MHz TKHCH 0 1.8 - - ns (KC, K#C#) 167 to 200 MHz 0 2.3 0 2.3 133 to 167 MHz 0 2.8 0 2.8 < 133 MHz 0 3.55 0 3.55 DLL/PLL lock time (K, C) TKC lock 1,024 - 1,024 - Cycle 3 K static to DLL/PLL reset TKC reset 30 - 30 - ns 4 TCHQV - 0.45 - 0.45 ns Output Times C, C# HIGH to output valid C, C# HIGH to output hold TCHQX - 0.45 - - 0.45 - ns TCHCQV - 0.45 - 0.45 ns C, C# HIGH to echo clock hold TCHCQX - 0.45 - - 0.45 - ns CQ, CQ# HIGH to output valid TCQHQV - 0.3 - 0.35 ns 5 CQ, CQ# HIGH to output hold TCQHQX - 0.3 - - 0.35 - ns 5 C, C# HIGH to echo clock valid C HIGH to output High-Z TCHQZ - 0.45 - 0.45 ns C HIGH to output Low-Z TCHQX1 - 0.45 - - 0.45 - ns Address valid to K rising edge TAVKH 0.35 - 0.4 - ns 6 Control inputs (R#, W#) valid to K rising edge TIVKH 0.35 - 0.4 - ns 6 Data inputs and write data select inputs (BWx#, NWx#) valid to K, K# TDVKH 0.35 - 0.4 - ns 6 K rising edge to address hold TKHAX 0.35 - 0.4 - ns 6 K rising edge to control inputs (R#, W#) hold TKHIX 0.35 - 0.4 - ns 6 K, K# rising edge to data inputs and TKHDX 0.35 - 0.4 - ns 6 Setup Times rising edge Hold Times write data select inputs (BWx#, NWx#) hold Data Sheet M19869EJ1V0DS 21 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Notes 1. When debugging the system or board, these products can operate at a clock frequency slower than TKHKH (MAX.) without the DLL/PLL circuit being used, if DLL# = LOW. Read latency (RL) is changed to 1.5 clock in this operation. The AC/DC characteristics cannot be guaranteed, however. 2. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. TKC var (MAX.) indicates a peak-to-peak value. 3. VDD slew rate must be less than 0.1 V DC per 50 ns for DLL/PLL lock retention. DLL/PLL lock time begins once VDD and input clock are stable. It is recommended that the device is kept NOP (R# = W# = HIGH) during these cycles. 4. K input is monitored for this operation. See below for the timing. K TKC reset or K TKC reset 5. Echo clock is very tightly controlled to data valid / data hold. By design, there is a 0.1 ns variation from echo clock to data. The data sheet parameters reflect tester guardbands and test setup variations. 6. This is a synchronous device. All addresses, data and control lines must meet the specified setup and hold times for all latching clock edges. Remarks 1. This parameter is sampled. 2. Test conditions as specified with the output loading as shown in AC Test Conditions unless otherwise noted. 3. Control input signals may not be operated with pulse widths less than TKHKL (MIN.). 4. If C, C# are tied HIGH, K, K# become the references for C, C# timing parameters. 5. VDDQ is 1.5 V DC. 22 Data Sheet M19869EJ1V0DS PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Read and Write Timing READ WRITE 1 2 READ WRITE 3 4 READ WRITE 5 NOP 6 WRITE 7 8 NOP 9 10 K TKHKL TKLKH TKHKH TKHK#H TK#HKH K# R# TKHIX TIVKH W# Address A0 A1 TAVKH Data in A2 A3 A4 A5 A6 D50 D51 TKHAX TKHAX TAVKH D11 D30 D10 D31 TDVKH TKHDX Data out D60 D61 TDVKH TKHDX Q00 Q01 TCHQX TCHQX Q20 Q21 Q41 TCQHQX TCHQX1 TCHQV Q40 TCHQZ TCHQV TCQHQV CQ TCHCQX TCHCQV CQ# TKHCH TCHCQX TCHCQV C TKHKL TKHKH TKLKH TKHK#H TK#HKH TKHCH C# Remarks 1. Q00 refers to output from address A0+0. Q01 refers to output from the next internal burst address following A0,i.e.,A0+1. 2. Outputs are disabled (high impedance) 2.5 clocks after the last READ (R# = LOW) is input in the sequences of [READ/WRITE]-[NOP/WRITE], [READ/WRITE]-[NOP/NOP], [READ/NOP]-[NOP/WRITE] and [READ/NOP] -[NOP/NOP]. 3. In this example, if address A0 = A1, data Q00 = D10, Q01 = D11. Write data is forwarded immediately as read results. Data Sheet M19869EJ1V0DS 23 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Application Example SRAM#1 D Vt SRAM Controller A R# ZQ CQ# CQ Q R= 250 D ZQ CQ# CQ Q A R# W# BWx# C/C# K/K# ... SRAM#4 W# BWx# C/C# K/K# R Data In Data Out R Address Vt R R# Vt W# BW# ... SRAM#1 CQ/CQ# SRAM#4 CQ/CQ# Vt R Vt R Source CLK/CLK# Return CLK/CLK# Vt R R = 50 Vt = Vref Remark AC specifications are defined at the condition of SRAM outputs, CQ, CQ# and Q with termination. 24 Data Sheet M19869EJ1V0DS R= 250 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A JTAG Specification These products support a limited set of JTAG functions as in IEEE standard 1149.1. Test Access Port (TAP) Pins Pin name TCK Pin assignments Description Test Clock Input. 2R All input are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. TMS 10R TDI 11R Test Mode Select. This is the command input for the TAP controller state machine. Test Data Input. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP controller state machine and the instruction that is currently loaded in the TAP instruction. TDO 1R Test Data Output. This is the output side of the serial registers placed between TDI and TDO. Output changes in response to the falling edge of TCK. Remark The device does not have TRST (TAP reset). The Test-Logic Reset state is entered while TMS is held HIGH for five rising edges of TCK. The TAP controller state is also reset on the SRAM POWER-UP. JTAG DC Characteristics (VDD = 1.8 0.1 V, unless otherwise noted) Parameter Symbol Conditions MIN. TYP. MAX. Unit JTAG Input leakage current ILI 0 V VIN VDD -5.0 - +5.0 A JTAG I/O leakage current ILO 0 V VIN VDDQ , -5.0 - +5.0 A Outputs disabled JTAG input HIGH voltage VIH 1.3 - VDD+0.3 V JTAG input LOW voltage VIL -0.3 - +0.5 V JTAG output HIGH voltage JTAG output LOW voltage VOH1 | IOHC | = 100 A 1.6 - - V VOH2 | IOHT | = 2 mA 1.4 - - V VOL1 IOLC = 100 A - - 0.2 V VOL2 IOLT = 2 mA - - 0.4 V Data Sheet M19869EJ1V0DS 25 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A JTAG AC Test Conditions Input waveform (Rise / Fall time 1 ns) 1.8 V 0.9 V Test Points 0.9 V 0.9 V Test Points 0.9 V 0V Output waveform Output load Figure 2. External load at test VTT = 0.9 V 50 ZO = 50 TDO 20 pF 26 Data Sheet M19869EJ1V0DS PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A JTAG AC Characteristics Parameter Symbol Conditions MIN. TYP. MAX. Unit 50 - - ns Clock Clock cycle time tTHTH Clock frequency fTF - - 20 MHz Clock HIGH time tTHTL 20 - - ns Clock LOW time tTLTH 20 - - ns TCK LOW to TDO unknown tTLOX 0 - - ns TCK LOW to TDO valid tTLOV - - 10 ns TMS setup time tMVTH 5 - - ns TDI valid to TCK HIGH tDVTH 5 - - ns tCS 5 - - ns TMS hold time tTHMX 5 - - ns TCK HIGH to TDI invalid tTHDX 5 - - ns tCH 5 - - ns Output time Setup time Capture setup time Hold time Capture hold time JTAG Timing Diagram tTHTH TCK tMVTH tTHTL tTLTH TMS tTHMX tDVTH TDI tTHDX tTLOX tTLOV TDO Data Sheet M19869EJ1V0DS 27 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Scan Register Definition (1) Register name Description Instruction register The instruction register holds the instructions that are executed by the TAP controller when it is moved into the run-test/idle or the various data register state. The register can be loaded when it is placed between the TDI and TDO pins. The instruction register is automatically preloaded with the IDCODE instruction at power-up whenever the controller is placed in test-logic-reset state. Bypass register The bypass register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through the RAMs TAP to another device in the scan chain with as little delay as possible. ID register The ID Register is a 32 bit register that is loaded with a device and vendor specific 32 bit code when the controller is put in capture-DR state with the IDCODE command loaded in the instruction register. The register is then placed between the TDI and TDO pins when the controller is moved into shift-DR state. Boundary register The boundary register, under the control of the TAP controller, is loaded with the contents of the RAMs I/O ring when the controller is in capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to shift-DR state. Several TAP instructions can be used to activate the boundary register. The Scan Exit Order tables describe which device bump connects to each boundary register location. The first column defines the bit's position in the boundary register. The second column is the name of the input or I/O at the bump and the third column is the bump number. Scan Register Definition (2) Register name Bit size Unit Instruction register 3 bit Bypass register 1 bit ID register 32 bit Boundary register 107 bit ID Register Definition Part number Organization ID [31:28] vendor revision no. ID [27:12] part no. ID [11:1] vendor ID no. ID [0] fix bit PD44165082A-A 2M x 8 XXXX 0000 0000 0000 1100 00000010000 1 PD44165092A-A 2M x 9 XXXX 0000 0000 0101 0001 00000010000 1 PD44165182A-A 1M x 18 XXXX 0000 0000 0000 1101 00000010000 1 PD44165362A-A 512K x 36 XXXX 0000 0000 0000 1110 00000010000 1 28 Data Sheet M19869EJ1V0DS PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A SCAN Exit Order Bit no. Signal name x8 x9 x18 x36 Bump Bit Signal name ID no. x8 x9 x18 Bump Bit Signal name Bump x36 ID no. x8 X9 x18 x36 ID 1 C# 6R 37 NC NC NC D15 10D 73 NC NC NC Q28 2C 2 C 6P 38 NC NC NC Q15 9E 74 Q4 Q5 Q11 Q20 3E 3 A 6N 39 NC NC Q7 Q7 10C 75 D4 D5 D11 D20 2D 4 A 7P 40 NC NC D7 D7 11D 76 NC NC NC D29 2E 5 A 7N 41 NC NC NC D16 9C 77 NC NC NC Q29 1E 6 A 7R 42 NC NC NC Q16 9D 78 NC NC Q12 Q21 2F 7 A 8R 43 Q3 Q4 Q8 Q8 11B 79 NC NC D12 D21 3F 8 A 8P 44 D3 D4 D8 D8 11C 80 NC NC NC D30 1G 9 A 9R 45 NC NC NC D17 9B 81 NC NC NC Q30 1F NC NC NC Q17 10B 82 Q5 Q6 Q13 Q22 3G 10 NC Q0 Q0 Q0 11P 46 11 NC D0 D0 D0 10P 47 CQ 11A 83 D5 D6 D13 D22 2G 12 NC NC NC D9 10N 48 - Internal 84 NC NC NC D31 1J 13 NC NC NC Q9 9P 49 9A 85 NC NC NC Q31 2J 14 NC NC Q1 Q1 10M 50 A 8B 86 NC NC Q14 Q23 3K 15 NC NC D1 D1 11N 51 A 7C 87 NC NC D14 D23 3J 16 NC NC NC D10 9M 52 A 6C 88 NC NC NC D32 2K 17 NC NC NC Q10 9N 53 R# 8A 89 NC NC NC Q32 1K 18 Q0 Q1 Q2 Q2 11L 54 NC BW1# 7A 90 Q6 Q7 Q15 Q24 2L 19 D0 D1 D2 D2 11M 55 NW0# BW0# BW0# BW0# 7B 91 D6 D7 D15 D24 3L 20 NC NC NC D11 9L 56 K 6B 92 NC NC NC D33 1M 21 NC NC NC Q11 10L 57 K# 6A 93 NC NC NC Q33 1L 22 NC NC Q3 Q3 11K 58 NC BW3# 5B 94 NC NC Q16 Q25 3N 23 NC NC D3 D3 10K 59 NW1# NC BW1# BW2# 5A 95 NC NC D16 D25 3M 24 NC NC NC D12 9J 60 W# 4A 96 NC NC NC D34 1N 25 NC NC NC Q12 9K 61 A 5C 97 NC NC NC Q34 2M 26 Q1 Q2 Q4 Q4 10J 62 A 4B 98 Q7 Q8 Q17 Q26 3P 27 D1 D2 D4 D4 11J 63 3A 99 D7 D8 D17 D26 2N 11H 64 DLL# 1H 100 NC NC NC D35 2P CQ# 1A 101 NC NC NC Q35 1P 28 ZQ A NC NC A A A NC NC A NC NC NC 29 NC NC NC D13 10G 65 30 NC NC NC Q13 9G 66 NC NC Q9 Q18 2B 102 A 3R 31 NC NC Q5 Q5 11F 67 NC NC D9 D18 3B 103 A 4R 32 NC NC D5 D5 11G 68 NC NC NC D27 1C 104 A 4P 33 NC NC NC D14 9F 69 NC NC NC Q27 1B 105 A 5P 34 NC NC NC Q14 10F 70 NC NC Q10 Q19 3D 106 A 5N 35 Q2 Q3 Q6 Q6 11E 71 NC NC D10 D19 3C 107 A 5R 36 D2 D3 D6 D6 10E 72 NC NC NC D28 1D Data Sheet M19869EJ1V0DS 29 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A JTAG Instructions Instructions EXTEST Description The EXTEST instruction allows circuitry external to the component package to be tested. Boundaryscan register cells at output pins are used to apply test vectors, while those at input pins capture test results. Typically, the first test vector to be applied using the EXTEST instruction will be shifted into the boundary scan register using the PRELOAD instruction. Thus, during the update-IR state of EXTEST, the output drive is turned on and the PRELOAD data is driven onto the output pins. IDCODE The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in capture-DR mode and places the ID register between the TDI and TDO pins in shift-DR mode. The IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed in the test-logic-reset state. BYPASS When the BYPASS instruction is loaded in the instruction register, the bypass register is placed between TDI and TDO. This occurs when the TAP controller is moved to the shift-DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path. SAMPLE / PRELOAD SAMPLE / PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is loaded in the instruction register, moving the TAP controller into the captureDR state loads the data in the RAMs input and Q pins into the boundary scan register. Because the RAM clock(s) are independent from the TAP clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents while the input buffers are in transition (i.e., in a metastable state). Although allowing the TAP to sample metastable input will not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the TAPs input data capture setup plus hold time (tCS plus tCH). The RAMs clock inputs need not be paused for any other TAP operation except capturing the I/O ring contents into the boundary scan register. Moving the controller to shift-DR state then places the boundary scan register between the TDI and TDO pins. SAMPLE-Z If the SAMPLE-Z instruction is loaded in the instruction register, all RAM Q pins are forced to an inactive drive state (high impedance) and the boundary register is connected between TDI and TDO when the TAP controller is moved to the shift-DR state. JTAG Instruction Coding IR2 IR1 IR0 Instruction 0 0 0 EXTEST 0 0 1 IDCODE 0 1 0 SAMPLE-Z 1 0 1 1 RESERVED 2 1 0 0 SAMPLE / PRELOAD 1 0 1 RESERVED 2 1 1 0 RESERVED 2 1 1 1 BYPASS Notes 1. TRISTATE all Q pins and CAPTURE the pad values into a SERIAL SCAN LATCH. 2. Do not use this instruction code because the vendor uses it to evaluate this product. 30 Data Sheet M19869EJ1V0DS Note PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Output Pin States of CQ, CQ# and Q Instructions Control-Register Status EXTEST IDCODE SAMPLE-Z SAMPLE BYPASS Remark Output Pin Status CQ, CQ# Q 0 Update High-Z 1 Update Update 0 SRAM SRAM 1 SRAM SRAM 0 High-Z High-Z 1 High-Z High-Z 0 SRAM SRAM 1 SRAM SRAM 0 SRAM SRAM 1 SRAM SRAM The output pin statuses during each instruction vary according to the Control-Register status (value of Boundary Scan Boundary Scan Register CAPTURE Register Register, bit no. 48). There are three statuses: Update : Contents of the "Update Register" are output to the output pin (QDR Pad). SRAM : Contents of the SRAM internal output "SRAM SRAM Output Update Register Update Output" are output to the output pin (QDR Pad). High-Z : The output pin (QDR Pad) becomes high impedance by controlling of the "High-Z JTAG ctrl". QDR Pad SRAM The Control-Register status is set during Update-DR at the High-Z EXTEST or SAMPLE instruction. SRAM Output Driver High-Z JTAG ctrl Data Sheet M19869EJ1V0DS 31 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Boundary Scan Register Status of Output Pins CQ, CQ# and Q Instructions SRAM Status EXTEST IDCODE SAMPLE-Z SAMPLE BYPASS Remark Boundary Scan Register Status CQ, CQ# Q READ (Low-Z) Pad Pad NOP (High-Z) Pad Pad READ (Low-Z) - - NOP (High-Z) - - READ (Low-Z) Pad Pad NOP (High-Z) Pad Pad READ (Low-Z) Internal Internal NOP (High-Z) Internal Pad READ (Low-Z) - - NOP (High-Z) - - The Boundary Scan Register statuses during execution each Note No definition No definition Boundary Scan Register instruction vary according to the instruction code and SRAM CAPTURE Register operation mode. There are two statuses: Internal Pad : Contents of the output pin (QDR Pad) are captured in the "CAPTURE Register" in the Boundary Scan Update Register Pad Register. Internal : Contents of the SRAM internal output "SRAM Output" are captured in the "CAPTURE Register" in the Boundary Scan Register. QDR Pad SRAM Output Driver High-Z JTAG ctrl 32 Data Sheet M19869EJ1V0DS SRAM Output PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A TAP Controller State Diagram 1 Test-Logic-Reset 0 1 0 1 Run-Test / Idle 1 Select-IR-Scan Select-DR-Scan 0 0 1 1 Capture-IR Capture-DR 0 0 0 Shift-DR 0 Shift-IR 1 1 1 1 Exit1-DR Exit1-IR 0 0 0 Pause-DR 0 Pause-IR 1 1 0 0 Exit2-DR Exit2-IR 1 1 Update-DR 1 Update-IR 0 1 0 Disabling the Test Access Port It is possible to use this device without utilizing the TAP. To disable the TAP Controller without interfering with normal operation of the device, TCK must be tied to VSS to preclude mid level inputs. TDI and TMS may be left open but fix them to VDD via a resistor of about 1 k when the TAP controller is not used. TDO should be left unconnected also when the TAP controller is not used. Data Sheet M19869EJ1V0DS 33 New Instruction PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Run-Test/Idle Update-IR Exit1-IR Shift-IR Exit2-IR IDCODE Pause-IR Exit1-IR Shift-IR 34 Select-IR-Scan Run-Test/Idle Data Sheet M19869EJ1V0DS Instruction Register state TDI Controller state TMS Test-Logic-Reset TDO Output Inactive Select-DR-Scan TCK Test Logic Operation (Instruction Scan) Capture-IR IDCODE PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Test-Logic-Reset Select-IR-Scan Select-DR-Scan Run-Test/Idle Update-DR Exit1-DR Shift-DR Instruction Exit2-DR Pause-DR Exit1-DR Shift-DR Capture-DR Data Sheet M19869EJ1V0DS Instruction Register state TDI Controller state TMS TCK Test Logic (Data Scan) Run-Test/Idle TDO Output Inactive Select-DR-Scan 35 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Package Drawing 165-PIN PLASTIC BGA (13x15) E w S B ZD ZE B 11 10 9 8 7 6 5 4 3 2 1 A D RPNML K J HGFEDCBA w S A INDEX MARK A y1 A2 S S y e S A1 (UNIT:mm) b x M S AB ITEM D DIMENSIONS 13.000.10 E 15.000.10 w 0.15 e 1.00 A 1.400.11 A1 0.400.05 A2 1.00 b 0.500.05 x 0.08 y 0.10 y1 0.20 ZD 1.50 ZE 36 Data Sheet M19869EJ1V0DS 0.50 P165F5-100-EQ2 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A Recommended Soldering Condition Please consult with our sales offices for soldering conditions of these products. Types of Surface Mount Devices PD44165082AF5-EQ2-A : 165-pin PLASTIC BGA (13 x 15) PD44165092AF5-EQ2-A : 165-pin PLASTIC BGA (13 x 15) PD44165182AF5-EQ2-A : 165-pin PLASTIC BGA (13 x 15) PD44165362AF5-EQ2-A : 165-pin PLASTIC BGA (13 x 15) Quality Grade * A quality grade of the products is "Standard". * Anti-radioactive design is not implemented in the products. * Semiconductor devices have the possibility of unexpected defects by affection of cosmic ray that reach to the ground and so forth. Data Sheet M19869EJ1V0DS 37 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A [ MEMO ] 38 Data Sheet M19869EJ1V0DS PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, etc., the device may malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed, and also in the transition period when the input level passes through the area between VIL (MAX) and VIH (MIN). 2 HANDLING OF UNUSED INPUT PINS Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must be judged separately for each device and according to related specifications governing the device. 3 PRECAUTION AGAINST ESD A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it when it has occurred. Environmental control must be adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work benches and floors should be grounded. The operator should be grounded using a wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with mounted semiconductor devices. 4 STATUS BEFORE INITIALIZATION Power-on does not necessarily define the initial status of a MOS device. Immediately after the power source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the reset signal is received. A reset operation must be executed immediately after power-on for devices with reset functions. 5 POWER ON/OFF SEQUENCE In the case of a device that uses different power supplies for the internal operation and external interface, as a rule, switch on the external power supply after switching on the internal power supply. When switching the power supply off, as a rule, switch off the external power supply and then the internal power supply. Use of the reverse power on/off sequences may result in the application of an overvoltage to the internal elements of the device, causing malfunction and degradation of internal elements due to the passage of an abnormal current. The correct power on/off sequence must be judged separately for each device and according to related specifications governing the device. 6 INPUT OF SIGNAL DURING POWER OFF STATE Do not input signals or an I/O pull-up power supply while the device is not powered. The current injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and the abnormal current that passes in the device at this time may cause degradation of internal elements. Input of signals during the power off state must be judged separately for each device and according to related specifications governing the device. Data Sheet M19869EJ1V0DS 39 PD44165082A-A, 44165092A-A, 44165182A-A, 44165362A-A QDR RAMs and Quad Data Rate RAMs comprise a new series of products developed by Cypress Semiconductor, Renesas, IDT, NEC Electronics, and Samsung. * The information in this document is current as of July, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC Electronics products are not taken measures to prevent radioactive rays in the product design. When customers use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in order to avoid risks of the damages to property (including public or social property) or injury (including death) to persons, as the result of defects of NEC Electronics products. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E0904E