TIP41/TIP41A/TIP41B/TIP41C — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP41/TIP41A/TIP41B/TIP41C Rev. A 1
July 2008
TIP41/TIP41A/TIP41B/TIP41C
NPN Epitaxial Silicon Transistor
Features
• Complementary to TIP42/TIP42A/TIP42B/TIP42C
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Emitter Voltage: TIP41
: TIP41A
: TIP41B
: TIP41C
40
60
80
100
V
V
V
V
VCEO Collector-Emitter Voltage: TIP41
: TIP41A
: TIP41B
: TIP41C
40
60
80
100
V
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 6 A
ICP Collector Current (Pulse) 10 A
IB Base Current 2 A
PC Collector Dissipation (TC=25°C) 65 W
Collector Dissipation (Ta=25°C) 2 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
1. Base 2. Collector 3. Emitter
TIP41/TIP41A/TIP41B/TIP41C — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP41/TIP41A/TIP41B/TIP41C Rev. A 2
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW≤300ms, Duty Cycle≤2%
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: TIP41
: TIP41A
: TIP41B
: TIP41C
IC = 30mA, IB = 0
40
60
80
100
V
V
V
V
ICEO Collector Cut-off Current
: TIP41/41A
: TIP41B/41C VCE = 30V, IB = 0
VCE = 60V, IB = 0 0.7
0.7 mA
mA
ICES Collector Cut-off Current
: TIP41
: TIP41A
: TIP41B
: TIP41C
VCE = 40V, VEB = 0
VCE = 60V, VEB = 0
VCE = 80V, VEB = 0
VCE = 100V, VEB = 0
400
400
400
400
μA
μA
μA
μA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1mA
hFE * DC Current Gain VCE = 4V,IC = 0.3A
VCE = 4V, IC = 3A 30
15 75
VCE(sat) * Collector-Emitter Saturation Voltage IC = 6A, IB = 600mA 1.5 V
VBE(sat) * Base-Emitter Saturation Voltage VCE = 4V, IC = 6A 2.0 V
fT Current Gain Bandwid th Product VCE = 10V, IC = 500m A, f = 1MHz 3.0 MHz
TIP41/TIP41A/TIP41B/TIP41C — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP41/TIP41A/TIP41B/TIP41C Rev. A 3
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
1 10 100 1000 10000
1
10
100
1000 VCE = 4V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000 10000
10
100
1000
10000 IC/IB = 10
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
110100
0.1
1
10
100
TIP41C VCEO MAX.
TIP41B VCEO MAX.
TIP41A VCEO MAX.
TIP41 VCEO MAX.
IC(MAX) (DC)
IC(MAX) (PULSE)
5ms
1ms
0.5ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP41/TIP41A/TIP41B/TIP41C — NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP41/TIP41A/TIP41B/TIP41C Rev. A 4
Mechanical Dimensions
TO220
TIP41/TIP41A/TIP41B/TIP41C NPN Epitaxial Silicon TransistorTIP41/TIP41A/TIP41B/TIP41C
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP41/TIP41A/TIP41B/TIP41C Rev. A 5
