Bulletin I27268 rev. A 12/06 IRKCS203/100P SCHOTTKY RECTIFIER 200 Amp Description/ Features The IRKCS203.. Schottky rectifier Common Cathode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, free-wheeling diodes, welding, and reverse battery protection. (1) + (2) 150C TJ operation Low forward voltage drop High frequency operation - Guard ring for enhanced ruggedness and long term reliability (3) UL pending TOTALLY LEAD-FREE, RoHS Compliant Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 200 A VRRM 100 V 12800 A 0.76 V - 55 to 175 C waveform IFSM @ tp = 5 s sine VF @ 100Apk, TJ=125C TJ range www.irf.com Outline TO-240AA 1 IRKCS203/100P Bulletin I27268 rev. A 12/06 Voltage Ratings Parameters VR IRKCS203/100P Max. DC Reverse Voltage (V) 100 VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IFSM Values Units 200 A Per Module Per Leg Conditions 50% duty cycle @ TC = 119 C, rectangular wave form 100 Max. Peak One Cycle Non-Repetitive 12800 Surge Current 1700 A EAS Non-Repetitive Avalanche Energy 15 mJ IAR Repetitive Avalanche Current 1 A 5s Sine or 3s Rect. pulse Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied TJ = 25 C, IAS = 5.5 Amps, L = 1mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM IRM Values Units Max. Forward Voltage Drop (1) Max. Reverse Leakage Current (1) Conditions 0.9 1.19 0.76 V V V @ 100A @ 200A @ 100A 0.98 V @ 200A 3 mA TJ = 25 C 40 mA TJ = 125 C TJ = 25 C TJ = 125 C VR = rated VR CT Max. Junction Capacitance 2750 pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25C LS Typical Series Inductance 7.0 nH From top of terminal hole to mounting plane dv/dt Max. Voltage Rate of Change VINS 10000 RMS isolation voltage (1 sec) 3500 V/ s (Rated VR) V 50 Hz, circuit to base, all terminals shorted (1) Pulse Width < 500s Thermal-Mechanical Specifications Parameters Values Units C TJ Max. Junction Temperature Range -55 to 175 Tstg Max. Storage Temperature Range -55 to 175 Conditions C RthJC Max. Thermal Resistance, Junction to Case (Per Leg) 0.6 C/W DC operation RthCS Max. Thermal Resistance, case to Heatsink 0.1 C/W Mounting Surface, smooth and greased wt T Approximate Weight Mounting Torque 10% Case Style 2 to heatsink busbar 110 (4) gr (oz) 5 Nm 4 TO - 240AA JEDEC www.irf.com IRKCS203/100P Bulletin I27268 rev. A 12/06 1000 1000 Reverse Current - IR (mA) TJ = 175C 100 100 150C 10 125C 100C 1 75C 0.1 50C 25C 0.01 0.001 0 20 40 60 80 100 Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 10000 Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) Tj = 175C 10 Tj = 125C Tj = 25C 1 TJ= 25C 1000 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Forward Voltage Drop - VFM (V) Fig. 1 - Max. Forward Voltage Drop Characteristics 0 10 20 30 40 50 60 70 80 90 100110 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Impedance ZthJC (C/W) 1 D = 0.75 D = 0.5 D = 0.33 D = 0.25 D = 0.2 0.1 Single Pulse (Thermal Resistance) 0.01 1E-04 1E-03 1E-02 1E-01 t1, Rectangular Pulse Duration (Seconds) 1E+00 Fig. 4 - Max. Thermal Impedance ZthJC Characteristics www.irf.com 3 IRKCS203/100P Bulletin I27268 rev. A 12/06 120 Square wave (D=0.50) 80% rated Vr applied 160 Average Power Loss - (Watts) Allowable Case Temperature (C) 180 140 120 DC 100 80 60 40 see note (2) 20 0 80 180 120 90 60 30 60 RMS limit 100 DC 40 20 0 0 50 100 150 200 250 300 0 Average Forward Current - IF(AV) (A) 60 90 120 150 Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Non-Repetitive Surge Current - IFSM (A) 30 Fig. 6 - Forward Power Loss Characteristics 100000 10000 1000 100 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Max. Non-Repetitive Surge Current L IRFP460 DUT Rg = 25 ohm CURRENT MONITOR HIGH-SPEED SWITCH FREE-WHEEL DIODE + Vd = 25 Volt 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com IRKCS203/100P Bulletin I27268 rev. A 12/06 Outline Table Dimensions are in millimeters and [inches] Ordering Information Table Device Code IR KC S 20 3 1 2 3 4 5 / 100 P 6 7 1 - International Rectifier 2 - Circuit Configuration 3 - S = Schottky Diode 4 - Average Rating (x10) 5 - Product Silicon Identification 6 - Voltage Rating (100 = 100V) 7 - Lead-Free KC = Add-A-Pak - 2 diodes/common cathode www.irf.com 5 IRKCS203/100P Bulletin I27268 rev. A 12/06 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/06 6 www.irf.com