Ordering number : ENA1218A MCH5908 N-Channel JFET 15V, 10 to 32mA, 35mS, Dual MCPH5 http://onsemi.com Features * * Composite type with 2 J-FET contained in a MCPH5 package currently in use, improving the mounting efficiency greatly The MCH5908 is formed with two chips, being equivalent to the 2SK3557, placed in one package Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage VDSX VGDS Gate Current IG Drain Current ID PD Allowable Power Dissipation Junction Temperature Total Power Dissipation PT Tj Storage Temperature Tstg Conditions Ratings Unit 15 1 unit V --15 V 10 mA 50 mA 200 mW 300 mW 150 C --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7021A-009 * Package : MCPH5 * JEITA, JEDEC : SC-88A, SC-70-5, SOT-353 * Minimum Packing Quantity : 3,000 pcs./reel 5 0.15 MCH5908H-TL-E MCH5908G-TL-E Packing Type : TL Marking 4 K NA R K LOT No. LOT No. 0 to 0.02 2.1 1.6 0.25 2.0 0.25 TL 1 2 3 0.65 0.3 0.07 0.85 Electrical Connection 4 5 1 5 2 3 1 : Drain1 2 : Source1/Source2 3 : Drain2 4 : Gate2 5 : Gate1 4 MCPH5 Semiconductor Components Industries, LLC, 2013 August, 2013 1 2 3 91212 TKIM/22410AC TKIM TC-00002292 No. A1218-1/6 MCH5908 Electrical Characteristics at Ta=25C Parameter Symbol Gate-to-Drain Breakdown Voltage V(BR)GDS IGSS VGS(off) Gate-to-Source Leakage Current Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance IDSS | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Crss Noise Figure NF Ratings Conditions min IG=--10A, VDS=0V VGS=--10V, VDS=0V typ Unit max --15 V --1.0 VDS=5V, ID=100A --0.3 VDS=5V, VGS=0V --0.7 10.0* VDS=5V, VGS=0V, f=1kHz 24 VDS=5V, VGS=0V, f=1MHz VDS=5V, Rg=1k, ID=1mA, f=1kHz nA --1.5 V 32.0* mA 35 mS 10.5 pF 3.5 pF 1.0 dB The specifications shown above are for each individual J-FET. * : The MCH5908 is classified by IDSS as follows (unit : mA). Rank G H IDSS 10 to 20 16 to 32 Ordering Information Package Shipping MCH5908H-TL-E Device MCPH5 3,000pcs./reel MCH5908G-TL-E MCPH5 3,000pcs./reel ID -- VDS 20 memo Pb Free ID -- VDS 20 VGS=0V 16 V V GS=0 12 Drain Current, ID -- mA Drain Current, ID -- mA 16 --0.1V --0.2V 8 --0.3V 4 --0.3V --0.4V --0.5V --0.6V --0.7V 0 0 0.4 0.8 1.2 1.6 2.0 Drain-to-Source Voltage, VDS -- V 20 8 --0.5V --0.6V 0 22 --0.2V 4 --0.4V --0.7V --0.1V 12 0 2.4 2 4 6 8 10 Drain-to-Source Voltage, VDS -- V ITR02749 ID -- VGS 16 VDS=5V 14 12 ITR02750 ID -- VGS VDS=5V IDSS=15mA 6 8 6 4 75 C 8 10 --2 5C 10 20 m 15 A mA 10 mA 0m 12 Ta = A 14 12 25 C Drain Current, ID -- mA 16 ID SS = 3 Drain Current, ID -- mA 18 4 2 2 0 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V 0 0.2 IT04224 0 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V 0 0.2 ITR02752 No. A1218-2/6 MCH5908 yfs -- ID 5 30m 3 = I DSS 2 yfs -- IDSS 100 VDS=5V f=1kHz Forward Transfer Admittance, yfs -- mS Forward Transfer Admittance, yfs -- mS 7 A A 15m 10 7 5 3 2 VDS=5V VGS=0V f=1kHz 7 5 3 2 10 3 5 7 2 1.0 3 5 7 2 10 3 Drain Current, ID -- mA 5 7 VGS(off) -- IDSS 3 3 5 Drain Current, IDSS -- mA 2 IT04226 10 IT04225 Ciss -- VDS 3 VGS=0V f=1MHz 2 Input Capacitance, Ciss -- pF Cutoff Voltage, VGS(off) -- V VDS=5V ID=100A 1.0 7 5 3 7 2 3 5 Drain Current, IDSS -- mA IT04227 10 5 2 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V VDS=5V ID=1mA Rg=1k 7 Noise Figure, NF -- dB 8 5 3 2 3 IT13691 NF -- f 10 6 4 2 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V VDS=5V ID=1mA f=1kHz 8 6 4 2 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Signal Source Resistance, Rg -- k 2 3 5 7 0.1 2 3 5 71000 ITR02759 2 3 5 7 1.0 2 3 5 7 10 Frequency, f -- kHz IT13692 NF -- Rg 10 0 0.1 0 0.01 3 300 2 3 5 7100 ITR02758 PT, PD -- Ta 350 Allowable Power Dissipation, PT, PD -- mW Reverse Transfer Capacitance, Crss -- pF 7 VGS=0V f=1MHz 1.0 1.0 Noise Figure, NF -- dB 10 3 1.0 Crss -- VDS 10 2 PT Total power dissipation 250 200 PD 1unit 150 100 50 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT15408 No. A1218-3/6 MCH5908 Taping Specification MCH5908H-TL-E, MCH5908G-TL-E No. A1218-4/6 MCH5908 Outline Drawing MCH5908H-TL-E, MCH5908G-TL-E Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No. A1218-5/6 MCH5908 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. 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