September 2, 1994
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.2 80 2 LFL (S 06 8)
epoxy sealed
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.∞:1 VSWR CAPABILITY
.LOW THERMAL RESISTANCE
.INPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.POUT = 35 W MIN. WITH 10.7 dB GAIN
DESCRIPTION
The MSC81035M is a medium power Class C
transistor designed specifically for pulsed L-Band
avionics applications. This device is a direct re-
placement for the MSC1035M. MSC81035M of-
fers improved saturated ouput power and collec-
tor efficiency based on the test circuit described
herein.
Low RF thermal resistance and computerized au-
tomatic wire bonding techniques ensure high reli-
ability and product consistency.
The MSC81035M is housed in the IMPAC™
package with internal input matching.
PIN CONNECTION
BRANDING
81035M
OR DER COD E
MSC81035M
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
PDISS Power Dissipation* (TC ≤ 100˚C) 150 W
ICDevice Current* 3. 0 A
VCC Collector-Supply Voltage* 55 V
TJJunction Temperature (Pulsed RF Operation) 25 0 °C
TSTG Storage Temperature − 65 to +200 °C
RTH(j-c) Junction-Case Thermal Resistance* 1. 0 °C/W
*Applies only to rated RF amplifier operation
Note: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot
Junction Temperature at rated RF operating conditions.
MSC81035M
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA
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ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
Symb ol Test C ond iti ons Value Unit
Min. Typ. Max.
POUT f = 1025 − 1150 MHz PIN = 3.0 W VCC = 50 V 35 40 — W
ηcf = 1025 − 1150 MHz PIN = 3.0 W VCC = 50 V 40 — — %
PGf = 1025 − 1150 MHz PIN = 3.0 W VCC = 50 V 10.7 11.2 — dB
N ote: Pu ls e Widt h =10µSec
Duty Cycle =1%
STATIC
Symbol Test Co nditions Value Unit
Min. Typ. Max.
BVCBO IC = 10 mA IE = 0 mA 65 — — V
BVEBO IE = 1 mA IC = 0 mA 3.5 — — V
BVCER IC = 10 mA RBE = 10 Ω65 — — V
ICES VBE = 0 V VCE = 50 V — — 5 mA
hFE VCE = 5 V IC = 500 mA 15 — 120 —
DYNAMIC
TYPICAL PERFORMANCE
TYPICAL BROADBAND POWER
AMPLIFIER
MSC81035M
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TEST CIRCUIT
All dimensions are in inches.
Ref.: Dwg. No. 101 002888
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
PIN = 3.0 W
VCC = 50 V
Normalized to 50 ohms
H
ZCL
H
L
M
LM
ZIN
IMPEDANCE DATA
ZIN
ZCL
FREQ. ZIN (Ω)Z
CL (Ω)
L = 1025 MHz 2.6 + j 8.3 7.7 + j 2.0
M = 1090 MHz 2.8 + j 8.7 7.1 + j 1.0
H = 1150 MHz 3.2 + j 4.4 6.5 − j 0.5
MSC81035M
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PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0218 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the conseque nces of use of such informa tion nor for any infringement o f patents or other r ights of third p arties w hich may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron-
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approva l of S GS- THO MSON Mic roel ect ro nics .
© 1994 SGS-TH OM SON Microe lectronics - All Rights Reser ved
SGS-THOMSO N Micr oelectronics GR OUP OF C OMPANIES
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MSC81035M
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