BCX19 BCX20 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 FEBRUARY 1996 PARTMARKING DETAILS COMPLEMENTARY TYPES - BCX19 BCX20 BCX19R BCX20R - U1 U2 U4 U5 BCX19 BCX20 BCX17 BCX18 - E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCX19 BCX20 UNIT Collector-Emitter Voltage VCES 50 30 V Collector-Emitter Voltage VCEO 45 Emitter-Base Voltage VEBO Peak Pulse Current 25 V 5 V ICM 1000 mA Continuous Collector Current IC 500 mA Base Current IB 100 mA Peak Base Current IBM 200 mA 330 mW -55 to +150 C Power Dissipation at Tamb=25C PTOT Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL Collector-Base Cut-Off Current MIN. TYP. MAX. UNIT CONDITIONS. ICBO 100 200 A nA VCB =20V VCB =20V, Tj=150C Emitter-Base Cut-Off Current IEBO 10 A VEB =5V Base-Emitter Voltage VBE 1.2 V IC =500mA, VCE =1V* Collector-Emitter Saturation Voltage VCE(sat) 620 mV IC =500mA, IB =50mA* Static Forward Current Transfer Ratio hFE Transition Frequency fT 200 MHz IC =10mA, VCE =5V f =35MHz Collector Capacitance CTC 5.0 pF IE =Ie =0, VCB =10V f =1MHz 600 100 70 40 IC =100mA, VCE =1V IC =300mA, VCE =1V* IC =500mA, VCE =1V* *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 32