DL2G75SH6N Aug. 2009 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN'S IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are significant portion of the total losses. Equivalent Circuit Features High Speed Switching BVCES = 600V Low Conduction Loss : VCE(sat) = 1.95 V (typ.) Fast & Soft Anti-Parallel FWD Short circuit rated : Min.10uS at TC=100 Reduced EMI and RFI Isolation Type Package C1 E1 G1 G2 E2 C2 Package : 6DM-2 Series Applications Motor Drives, High Power Inverters, Welding Machine, Induction Heating, UPS , CVCF, Robotics , Servo Controls, High Speed SMPS Please see the package out line information Absolute Maximum Ratings @ Tj=25(Per Leg) Symbol Parameter Conditions Ratings Unit VCES Collector-Emitter Voltage - 600 V VGES Gate-Emitter Voltage - 20 V IC Collector Current Tc = 25 100 A Tc = 70 75 A - 150 A ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current Tc = 100 75 A IFM Diode Maximum Forward Current - 150 A TSC Short Circuit Withstand Time Tc = 100 10 uS PD Maximum Power Dissipation Tc = 25 300 W Tj Operating Junction Temperature - -40 ~ 150 Tstg Storage Temperature Range - -40 ~ 125 Viso Isolation Voltage Maximum Lead Temp. for soldering Purposes, 1/8" from case for 9 seconds AC 1 minute 2500 V - 260 - 4.0 N.m TL Mounting screw Torque :M3 Note : (1) Repetitive rating : Pulse width limited by max. junction temperature Copyright@Dawin Electronics Corp. All right reserved 1/6 DL2G75SH6N Aug. 2009 Electrical Characteristics of IGBT @ TC=25 (unless otherwise specified) Values Symbol Parameter Unit Conditions Min. Typ. Max. BVCES C - E Breakdown Voltage VGE = 0V , IC =250uA 600 - - V BVCES/ Temperature Coeff. of VGE = 0V , IC = 1.0mA - 0.6 - V/ TJ Breakdown Voltage VGE(th) G - E threshold voltage IC = 500uA , VCE = VGE 5 - 8.5 V ICES Collector cutoff Current VCE = 600V , VGE = 0V - - 250 uA IGES G - E leakage Current VGE =20V - - 100 nA VCE(sat) Collector to Emitter IC= 75A, VGE= 15V @TC= 25 - 2.1 2.8 V saturation voltage IC= 75A, VGE= 15V @TC= 100 - 2.4 - V Cies Input capacitance VGE = 0V , f = 1 - 7000 - pF Coes Output capacitance VCE = 30V - 650 - pF Cres Reverse transfer capacitance - 160 - pF td(on) Turn on delay time VCC = 300V , IC = 75A - 20 - nS Turn on rise time VGE = 15V - 40 - nS Turn off delay time RG = 8.2 - 70 - nS Turn off fall time Inductive Load, @Tc=25 - 100 200 nS tr td(off) tf Eon Turn on Switching Loss - 1.4 - mJ Eoff Turn off Switching Loss - 2.6 - mJ Ets Total Switching Loss - 4.0 - mJ Tsc Short Circuit Withstand Time 10 - - uS Vcc = 300V, VGE = 15V @TC = 100 Qg Total Gate Charge Vcc = 300V - 300 360 nC Qge Gate-Emitter Charge VGE = 15V - 60 85 nC Qgc Gate-Collector Charge IC = 75A - 120 150 nC Copyright@Dawin Electronics Corp. All right reserved 2/7 DL2G75SH6N Aug. 2009 Electrical Characteristics of FRD @ TC=25 (unless otherwise specified) Values Symbol VFM trr Irr Qrr Parameter Conditions Unit Min. Typ. Max. Tc =25 - 1.5 1.9 Tc =100 - 1.4 - Tc =25 - 115 - Tc =100 - 125 - Tc =25 - 6.2 - Recovery Current Tc =100 - 7.5 - Diode Reverse Tc =25 - 360 - Tc =100 - 468 - Diode Forward Voltage IF=75A Diode Reverse IF=75A, VR=300V Recovery Time di/dt= -150A/uS V nS Diode Peak Reverse A nC Recovery Charge Thermal Characteristics and Weight Values Symbol Parameter Conditions Unit Min. Typ. Max. RJC Junction-to-Case(IGBT Part, Per 1/2 Module) - - 0.42 /W RJC Junction-to-Case(DIODE Part, Per 1/2 Module) - - 0.72 /W RCS Case-to-Sink ( Conductive grease applied) 0.05 - - /W Weight Weight of Module - - 30 g Copyright@Dawin Electronics Corp. All right reserved 3/7 DL2G75SH6N Aug. 2009 Performance Curves 200 200 Common Emitter TC=125 20V 15V 12V 120 10V 80 V GE = 8V 40 0 12V 120 10V 80 V GE = 8V 40 1 2 3 4 5 0 6 Collector - Emitter Voltage, VCE(sat) [V] 1 2 3 4 5 6 Collector - Emitter Voltage, VCE(sat) [V] Fig 1. Typical Output characteristics Fig 2. Typical Output characteristics 100 200 80 150 T C =25 Load Current [A] Collector Current, IC [A] 15V 0 0 T C =125 100 50 60 40 20 Duty cycle = 50% TC=125 Power Dissipation = 100W 0 0 0 1 2 3 4 5 0.1 6 1 Collector - Emitter Voltage, VCE(sat) [V] Common Emitter TC=25 16 12 8 150A 75A IC=40A 0 0 4 8 12 16 100 1000 Fig 4. Load Current vs. Frequency Collector - Emitter Voltage, VCE(sat) [V] 20 4 10 Frequency [KHz] Fig 3. Typical Saturation Voltage characteristics Collector - Emitter Voltage, VCE(sat) [V] 20V 160 160 Collector Current, IC [A] Collector Current, IC [A] Common Emitter TC=25 20 20 Common Emitter TC=125 16 12 8 150A 4 75A IC=40A 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, VGE [V] Fig 6. Typical Saturation Voltage vs. V GE Fig 5. Typical Saturation Voltage vs. V GE Copyright@Dawin Electronics Corp. All right reserved 4/7 20 DL2G75SH6N Aug. 2009 16000 15 Cies Gate-Emitter Voltage ,VGE [V] Common Emitter Common Emitter VGE=0V, f=1MHZ VGE=0V, f=1MHZ TC=25 TC=25 14000 Capacitance [pF] 12000 Cies 10000 8000 6000 Coes Coes 4000 Cres 2000 12 300V 9 0.1 TBD 3 0 1 10 0 100 50 100 Collector - Emitter Voltage, VCE [V] 200 250 350 600 700 Collector Current, IC [A] 1000 0.1 0.01 IGBT : DIODE : TC=25 1.E -04 1.E-03 1.E-02 1.E-01 100 10 Single Non-repetitive Pulse Tj125 VGE = 15V RG = 8.2 1 1.E+0 0 0 1.E+0 1 100 Rectangular Pulse Duration [sec] 200 300 400 500 Collector-Emitter Voltage, VCE [V] Fig 9. Transient Thermal Impedance Fig 10. RBSOA Characteristic 1000 120 TJ 150 VGE 15V Collector Current ,Ic [ A ] 900 800 Collector Current, IC [A] 300 Fig 8. Gate Charge Characteristics 1 Thermal Response Zthjc [ /W] 150 Gate Charge, Qg [nc] Fig 7. Capacitance characteristics 0.001 1.E -05 200V VCC = 100V 6 Cres 0 Common Emitter RL = 3.3 TC = 25 700 600 500 400 300 200 100 80 60 40 20 100 0 0 0 100 200 300 400 500 600 700 0 20 40 60 80 100 120 140 160 Case Temperature, Tc [ ] Collector-Emitter Voltage, VCE [V] Fig 11. SCSOA Characteristic Fig 12. rated Current vs. Case Temperature Copyright@Dawin Electronics Corp. All right reserved 5/7 DL2G75SH6N Aug. 2009 500 TJ 150 VGE 15V Ic MAX. (Pulsed) Collector Current, IC [A] Power Dissipation ,PD [ W ] 400 300 200 100 100 100us 1ms 10 DC Operation Single Non-repetitive Pulse Tc = 25 Curves must be derated linerarly with increase In temperature 1 0.1 0 0 20 40 60 80 100 120 140 160 0.1 Case Temperature, Tc [ ] 1 Fig14. SOA characteristics Forward Current, IF [A] 200 T C=125 100 T C=25 0 1 2 3 10 100 Collector-Emitter Voltage, VCE [V] Fig 13. Power Dissipation vs. Case Temperature 0 50us Ic MAX. (Continuous) 4 Forward Drop Voltage, VF [V] Fig 15. Forward characteristics Copyright@Dawin Electronics Corp. All right reserved 6/7 1000 Aug. 2009 Package Out Line Information 6DM-2 Copyright@Dawin Electronics Corp. All right reserved 7/7 DL2G75SH6N