Copyright@Dawin Electronics Corp. All right reserved
DL2G75SH6N
Aug. 2009
Description
DAWIN’S IGBT 6DM-2 Package devices are optimized to reduce losses
and switching noise in high frequency power conditioning electrical systems.
These IGBT modules are ideally suited for power inverters, motors drives
and other applications where switching losses are significant portion of the
total losses.
Features
☞High Speed Switching
☞BVCES = 600V
☞Low Conduction Loss : VCE(sat) = 1.95 V (typ.)
☞Fast & Soft Anti-Parallel FWD
☞Short circuit rated : Min.10uS at TC=100℃
☞Reduced EMI and RFI
☞Isolation Type Package
Applications
Motor Drives, High Power Inverters, Welding Machine,
Induction Heating, UPS , CVCF, Robotics , Servo Controls,
High Speed SMPS
1/6
Equivalent Circuit
Equivalent Circuit and Package
Package : 6DM-2 Series
Please see the package out line information
Absolute Maximum Ratings@ Tj=25℃(Per Leg)
E2
C2
G2
Symbol Parameter Ratings UnitConditions
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
Tj
Tstg
Viso
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 9 seconds
Mounting screw Torque :M3
600
±20
100
75
150
75
150
10
300
-40 ~ 150
-40 ~ 125
2500
260
4.0
V
V
A
A
A
A
A
uS
W
℃
℃
V
℃
N.m
-
-
Tc = 25℃
Tc = 70℃
-
Tc = 100℃
-
Tc = 100℃
Tc = 25℃
-
-
AC 1 minute
-
-
C1 E1 G1
High Power Rugged Type IGBT Module
Note : (1) Repetitive rating : Pulse width limited by max. junction temperature
Copyright@Dawin Electronics Corp. All right reserved
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Aug. 2009
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Electrical Characteristics of IGBT @ TC=25℃(unless otherwise specified)
Symbol Parameter
Values
Unit
Conditions
Min. Typ. Max.
C - E Breakdown Voltage
Temperature Coeff. of
Breakdown Voltage
G - E threshold voltage
Collector cutoff Current
G - E leakage Current
Collector to Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Turn on rise time
Turn off delay time
Turn off fall time
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
BVCES
ΔBVCES/
ΔTJ
VGE(th)
ICES
IGES
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tsc
Qg
Qge
Qgc
600
-
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
0.6
-
-
-
2.1
2.4
7000
650
160
20
40
70
100
1.4
2.6
4.0
-
300
60
120
-
-
8.5
250
±100
2.8
-
-
-
-
-
-
-
200
-
-
-
-
360
85
150
V
V/℃
V
uA
nA
V
V
pF
pF
pF
nS
nS
nS
nS
mJ
mJ
mJ
uS
nC
nC
nC
VGE = 0V , IC=250uA
VGE = 0V , IC= 1.0mA
IC= 500uA , VCE = VGE
VCE = 600V , VGE = 0V
VGE =±20V
IC= 75A, VGE= 15V @TC= 25℃
IC= 75A, VGE= 15V @TC= 100℃
VGE = 0V , f = 1㎒
VCE = 30V
VCC = 300V , IC= 75A
VGE = 15V
RG= 8.2Ω
Inductive Load, @Tc=25℃
Vcc = 300V, VGE = 15V
@TC= 100℃
Vcc = 300V
VGE = 15V
IC= 75A
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DL2G75SH6N
Aug. 2009
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Electrical Characteristics of FRD @ TC=25℃(unless otherwise specified)
Symbol Parameter
Values
UnitConditions
Min. Typ. Max.
IF=75A
IF=75A, VR=300V
di/dt= -150A/uS
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
Diode Forward Voltage
Diode Reverse
Recovery Time
Diode Peak Reverse
Recovery Current
Diode Reverse
Recovery Charge
VFM
trr
Irr
Qrr
-
-
-
-
-
-
-
-
1.5
1.4
115
125
6.2
7.5
360
468
1.9
-
-
-
-
-
-
-
V
nS
A
nC
Thermal Characteristics and Weight
Symbol Parameter
Values
UnitConditions
Min. Typ. Max.
RθJC
RθJC
RθCS
Weight
Junction-to-Case(IGBT Part, Per 1/2 Module)
Junction-to-Case(DIODE Part, Per 1/2 Module)
Case-to-Sink ( Conductive grease applied)
Weight of Module
℃/W
℃/W
℃/W
g
-
-
-
-
0.42
0.72
-
30
-
-
0.05
-
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Aug. 2009
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Performance Curves
Collector – Emitter Voltage, VCE(sat) [V]
Collector Current, IC[A]
Gate – Emitter Voltage, VGE [V]
Collector – Emitter Voltage, VCE(sat) [V]
Collector – Emitter Voltage, VCE(sat) [V]
Gate – Emitter Voltage, VGE [V]
Fig 1. Typical Output characteristics
Fig 5. Typical Saturation Voltage vs. VGE
Fig 2. Typical Output characteristics
Fig 6. Typical Saturation Voltage vs. VGE
Load Current [A]
Frequency [KHz]
0
4
8
12
16
20
0 4 8 12 16 20
Common Emitter
TC=25℃
150A
75A
IC=40A
0
4
8
12
16
20
0 4 8 12 16 20
Common Emitter
TC=125℃
150A
75A
IC=40A
0
20
40
60
80
100
0.1 1 10 100 1000
Duty cycle = 50%
TC=125℃
Power Dissipation = 100W
Fig 4. Load Current vs. FrequencyFig 3. Typical Saturation Voltage characteristics
Collector – Emitter Voltage, VCE(sat) [V]
Collector Current, IC[A]
0
40
80
120
160
200
0 1 2 3 4 5 6
20V
12V
10V
VGE = 8V
Common Emitter
TC=25℃15V
0
40
80
120
160
200
0 1 2 3 4 5 6
Common Emitter
TC=125℃20V
12V
10V
VGE = 8V
15V
Collector – Emitter Voltage, VCE(sat) [V]
Collector Current, IC[A]
0
50
100
150
200
0123456
TC=125℃
TC=25℃
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Aug. 2009
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Fig 8. Gate Charge Characteristics
Fig 9. Transient Thermal Impedance Fig 10. RBSOA Characteristic
Fig 11. SCSOA Characteristic
Collector Current, IC[A]
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Collector Current, IC[A]
Fig 7. Capacitance characteristics
Collector – Emitter Voltage, VCE [V]
Capacitance [pF]
Common Emitter
VGE=0V, f=1MHZ
TC=25℃
Cies
Coes
Cres
0
2000
4000
6000
8000
10000
12000
14000
16000
0.1 1 10 1 00
Cies
Coes
Cres
Common Emitter
VGE=0V, f=1MHZ
TC=25℃
Thermal Response Zthjc [ /W]
℃
0.001
0. 01
0. 1
1
1.E -05 1.E -04 1.E- 03 1.E-02 1.E-0 1 1.E+0 0 1.E+0 1
IGBT :
DIODE :
TC=25℃
Gate-Emitter Voltage ,VGE [V]
Rectangular Pulse Duration [sec]
Gate Charge, Qg[nc]
TBD
0
3
6
9
12
15
0 50 100 150 200 250 300 350
Common Emitter
RL= 3.3Ω
TC= 25℃
VCC = 100V
200V
300V
1
10
100
1000
0 100 200 300 400 500 600 700
Single Non-repetitive
Pulse Tj≤125℃
VGE = 15V
RG= 8.2Ω
0
100
200
300
400
500
600
700
800
900
1000
0 100 200 300 400 500 600 700
Case Temperature, Tc [ ℃]
Collector Current ,Ic [ A ]
Fig 12. rated Current vs. Case Temperature
0
20
40
60
80
100
120
0 20 40 60 80 100 120 140 160
TJ≤ 150℃
VGE ≥15V
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Aug. 2009
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Fig 13. Power Dissipation vs. Case Temperature
Power Dissipation ,PD[ W ]
Case Temperature, Tc [ ℃]
0
100
200
300
400
0 20 40 60 80 100 120 140 160
TJ≤ 150℃
VGE ≥15V
Fig 15. Forward characteristics
Forward Drop Voltage, VF[V]
Forward Current, IF[A]
0
100
200
0 1 2 3 4
TC=125℃
TC=25℃
500
100
10
1
0.1
0.1 1 10 100 1000
Single Non-repetitive
Pulse Tc = 25℃
Curves must be derated
linerarly with increase
In temperature
Collector Current, IC[A]
Collector-Emitter Voltage, VCE [V]
Fig14. SOA characteristics
DC Operation
1ms
100us
50us
Ic MAX. (Pulsed)
Ic MAX. (Continuous)
Copyright@Dawin Electronics Corp. All right reserved
DL2G75SH6N
Aug. 2009
Package Out Line Information
6DM-2
7/7
