2fach-Silizium-PIN Fotodiode in SMT 2-Chip Silicon PIN Photodiode in SMT Lead (Pb) Free Product - RoHS Compliant KOM 2125 KOM 2125 FA KOM 2125 FA KOM 2125 Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm und bei 880nm (KOM 2125 FA) * Kurze Schaltzeit (typ. 25 ns) * geeignet fur Vapor-Phase Loten und IR-Reflow-Loten * SMT-fahig * Especially suitable for applications from 400 nm to 1100 nm and for 880nm (KOM 2125 FA) * Short switching time (typ. 25 ns) * Suitable for vapor-phase and IR-reflow soldering * Suitable for SMT Anwendungen Applications * * * * * * * * Nachlaufsteuerungen Kantenfuhrung Industrieelektronik Messen/Steuern/Regeln" Typ Type Bestellnummer Ordering Code KOM 2125 Q65110A2703 KOM 2125 FA Q65110A2702 2005-05-09 1 Follow-up controls Edge drives Industrial electronics For control and drive circuits KOM 2125 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ...+ 80 C Sperrspannung Reverse voltage VR 60 V Verlustleistung, TA = 25 C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 C) Characteristics (TA = 25 C) Bezeichnung Parameter Symbol Symbol Wert Value KOM 2125 Fotostrom Photocurrent VR = 5 V; Normlicht/standard light A Diode A T = 2856 K, Ev = 1000 lx Diode B 2 VR = 5 V; = 870 nm, Ee = 1 mW/cm Diode A Diode B IP KOM 2125 FA A 40 ( 30) 100 ( 75) IP Einheit Unit 26 ( 20) 70 ( 50) A Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 850 900 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 400 ...1100 750 ...1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 4 10 4 10 mm2 Lx B Lx W 2x 2 2x 5 2x 2 2x 5 mm x mm 60 60 Grad deg. IR 5 (30) 10 (30) 5 (30) 10 (30) nA Diode A Diode B Abmessung der bestrahlungsempfindlichen Flache Diode A Dimensions of radiant sensitive area Diode B Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current 2005-05-09 Diode A Diode B 2 KOM 2125 Kennwerte (TA = 25 C) Characteristics (TA = 25 C) (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value KOM 2125 Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standard light A = 870 nm, Ee = 1 mW/cm2 VO VO 350 ( 300) Diode A Diode B Diode A Diode B ISC 38 95 Diode A Diode B tr , tf Durchlaspannung, IF = 100 mA; E = 0 Forward voltage Kapazitat Capacitance VR = 0 V; f = 1 MHz; E = 0 Kurzschlustrom Short-circuit current Normlicht/standard light A T = 2856 K, Ev = 1000 lx = 870 nm, Ee = 1 mW/cm2 Anstiegszeit/Abfallzeit Rise and fall time RL = 50 ; VR = 5 V; = 850 nm Diode A Diode B Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von IP Temperature coefficient of IP Normlicht/standard light A = 870 nm 2005-05-09 KOM 2125 FA 350 ( 300) mV mV A 24 66 A 18 25 18 25 ns VF 1.0 1.0 V C0 40 100 40 100 pF TCV - 2.6 - 2.6 mV/K ISC %/K TCI 0.18 0.14 Rauschaquivalente Strahlungsleistung Diode A Noise equivalent power Diode B VR = 10 V Nachweisgrenze Detection limit VR = 10 V Einheit Unit Diode A Diode B NEP 6.4 x 10- 14 9.1 x 10- 14 6.4 x 10- 14 9.1 x 10- 14 W -----------Hz D* 3.1 x 1012 3.5 x 1012 3.1 x 1012 3.5 x 1012 cm x Hz --------------------------W 3 KOM 2125 Relative Spectral Sensitivity KOM 2125, Srel = f () Relative Spectral Sensitivity KOM 2125FA , Srel = f () Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev) OHF01430 100 Srel % 80 70 60 50 40 30 20 10 0 400 Dark Current, IR = f (VR), E = 0 normalized to 10 V/25 oC 600 800 1000 nm 1200 Dark Current IR = f (TA), VR = 10 V, E = 0, normalized to TA = 25 oC Capacitance C = f (VR), f = 1 MHz, E = 0 Total Power Dissipation Ptot = f (TA) Directional Characteristics Srel = f () 40 30 20 10 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2005-05-09 0.8 0.6 0.4 0 20 40 60 80 4 100 120 KOM 2125 Mazeichnung Package Outlines 2 A 3 B 1 8.5 (0.335) Cathode 8.2 (0.323) 6.7 (0.264) 6.2 (0.244) Chip position 0...0.1 (0...0.004) 0.3 (0.012) Active area 4.3 (0.169) 5.0 (0.197) 1.4 (0.055) 0.2 (0.008) 4.5 (0.177) Photosensitive area A = 2 (0.079) x 2 (0.079) B = 5 (0.197) x 2 (0.079) 0.9 (0.035) 0.7 (0.028) 5.2 (0.205) 1.2 (0.047) 1.1 (0.043) GEOY6860 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Lotbedingungen Soldering Conditions IR-Reflow Lotprofil fur bleifreies Loten IR Reflow Soldering Profile for lead free soldering Vorbehandlung nach JEDEC Level 4 Preconditioning acc. to JEDEC Level 4 (nach J-STD-020B) (acc. to J-STD-020B OHLA0688 300 C Maximum Solder Profile T 250 C 245 C +0 -10 C 240 C C 235 C +5 -0 C 217 C 10 s min 200 30 s max Ramp Down 6 K/s (max) 150 100 s max 120 s max 100 Ramp Up 3 K/s (max) 50 25 C 0 0 50 100 150 200 250 t 2005-05-09 5 s 300 KOM 2125 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered 2005-05-09 6