2-107
Minimizing the response time can minimize the output
capacitance required.
The response time to a transient is different for the
application of load and the removal of load. The following
equations give the approximate response time interval for
application and removal of a transient load:
where: ITRAN is the transient load current step, tRISE is the
response time to the application of load, and tFALL is the
response time to the removal of load. With a +5V input
source, the worst case response time can be either at the
application or removal of load and dependent upon the
DACOUT setting. Be sure to check both of these equations
at the minimum and maximum output levels for the worst
case response time. With a +12V input, and output voltage
level equal to DACOUT, tFALL is the longest response time.
Input Capacitor Selection
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use small ceramic
capacitors for high frequency decoupling and bulk
capacitors to supply the current needed each time Q1turns
on. Place the small ceramic capacitors physically close to
the MOSFETs and between the drain of Q1 and the anode
of Schottky diode D2.
The important parameters for the bulk input capacitor are
the voltage rating and the RMS current rating. For reliable
operation, select the bulk capacitor with voltage and
current ratings above the maximum input voltage and
largest RMS current required by the circuit. The capacitor
voltage rating should be at least 1.25 times greater than the
maximum input voltage and a voltage rating of 1.5 times is
a conser vative guideline. The RMS current rating
requirement for the input capacitor of a buck regulator is
approximately 1/2 the DC load current.
F or a through hole design, sev er al electrolytic capacitors
(Panasonic HFQ series or Nichicon PL series or Sanyo MV-
GX or equivalent) may be needed. For surface mount designs,
solid tantalum capacitors can be used, but caution m ust be
e xercised with regard to the capacitor surge current rating.
These capacitors must be capab le of handling the surge-
current at power-up. The TPS series available from AVX, and
the 593D series from Sprague are both surge current tested.
MOSFET Selection/Considerations
The HIP6005A requires an N-Channel power MOSFET. It
should be selected based upon rDS(ON), gate supply
requirements, and thermal management requirements.
In high-current applications, the MOSFET po w er dissipation,
package selection and heatsink are the dominant design
factors. The power dissipation includes two loss components;
conduction loss and switching loss. The conduction losses are
the largest component of power dissipation for the MOSFET.
Switching losses also contribute to the overall MOSFET
power loss (see the equations below). These equations
assume linear voltage-current tr ansitions and are
approximations. The gate-charge losses are dissipated by the
HIP6005A and do not heat the MOSFET. Howe ver, large
gate-charge increases the s witching interval, tSW, which
increases the upper MOSFET s witching losses . Ensure that
the MOSFET is within its maximum junction temperature at
high ambient temperature b y calculating the temper ature rise
according to package thermal-resistance specifications. A
separate heatsink may be necessary depending upon
MOSFET power, package type, ambient temperature and air
flow.
Standard-gate MOSFETs are normally recommended for
use with the HIP6005A. However, logic-level gate MOSFETs
can be used under special circumstances. The input voltage,
upper gate drive level, and the MOSFETs absolute gate-
to-source voltage rating determine whether logic-level
MOSFETs are appropriate.
Figure 9 shows the upper gate drive (BOOT pin) supplied by
a bootstrap circuit from VCC. The boot capacitor, CBOOT,
develops a floating supply voltage referenced to the PHASE
pin. This supply is refreshed each cycle to a voltage of VCC
less the boot diode drop (VD) when the Schottky diode, D2,
conducts. Logic-level MOSFETs can only be used if the
MOSFETs absolute gate-to-source voltage rating exceeds
the maximum voltage applied to VCC.
Figure 10 shows the upper gate drive supplied by a direct
connection to VCC. This option should only be used in
converter systems where the main input voltage is +5VDC or
less. The peak upper gate-to-source voltage is approximately
VCC less the input supply. F or +5V main power and +12VDC
f or the bias , the gate-to-source voltage of Q1 is 7V. A logic-
level MOSFET is a good choice for Q1under these conditions.
tRISE LI
TRAN
•
VIN VOUT
–
--------------------------------= tFALL LI
TRAN
•
VOUT
--------------------------=
PCOND = IO2• rDS(ON) • D
Where: D is the duty cycle = VOUT/VIN,
tSW is the switching interval, and
FS is the switching frequency.
PSW = 1/2 IO• VIN • tSW • FS
HIP6005A