MOTOROLA SC (XSTRS/R F) UBE D MB 6367254 0095059 9 MENOTL MOTOROLA . . Tr 3I- 23 = SEMICONDUCTOR EE TECHNICAL DATA The RF Line BF433* age NPN Silicon 3 , *European Part Number RF Low Power Transistor : ic = 200 mA a ... designed for high current, low power amplifiers up to 2 GHz. SURFACE MOUNT fr High Current Gain-Bandwidth Product fy = 5.5 GHz (Typ) @ te = 75 mA HIGH FREQUENCY @ Low Noise 2 dB (Typ) @ 500 MHz TRANSISTOR @ Low intermodulation Distortion NPN SILICON High Gain 15.5 dB (Typ) @ 500 MHz @ Low Cost SORF Plastic Surface Mount Package @ State-of-the-Art Technology Fine Line Geometry Gold Top Metal and Wires 8 Silicon Nitride Passivated lon implanted Arsenic Emitters 1 Die Same as MRFS81,A CASE 751-03, STYLE 1 SORF (50-8) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Vceo 15 Vde Collector-Base Voltage , Vcso 20 Vde Emitter-Base Voltage VEeBO 2.5 Vde Collector-Current Continuous Ic 200 mAdc Total Device Dissipation @ Tc = 110C (1) Pp 1.0 Watts Derate above 110C 26 mwrc Total Device Dissipation @ Ta = 28C Pp 10 Watts Derate above 25C (2) 8.0 mw/c Operating Junction and Storage Temperature Range Ts Tstg {65 to +150 c THERMAL CHARACTERISTICS Cheracteristic Symbol Max Unk Thermal Resistance, Junction to Case Rec 4 c/w Thermal Resistance, Junction to Ambient Rela as CW ELECTRICAL CHARACTERISTICS (Tc = 26C unless otherwise noted.) | Characteristic [ Symbot | Mm | Typ | Mex | Unt | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (ic = 5 mAdc, Ig = 0) ViBRICEO 15 - ~ Vde Collector-Emitter Breakdown Voltage (ic = 6 mAdc, Vge = 0} =| VieRICES EO) _ - Vide Emitter-Base Breakdown Voltage (le = 0.1 mAdc, ic = 0) ViIBRIEBO 2.5 - - Vde Collector Cutoff Current (Vcg = 15 Vde, Vee = 0, Te = 28C) (cao _ _ 0.1 mAde ON CHARACTERISTICS [ DC Current Gain (ic = 50 mAdc, Voge = 10 Vdc} | ne [| 20 ~o | 2 [| | (1) Case temperature is measured on the collector lead where the lead contacts the printed {continued} circuit boerd closest to the body of the package. (2) Free air. a MOTOROLA RF DEVICE DATA 2-1037 MOTOROLA SC CXSTRS/R F) 4UBE D MM 6367254 0095060 S MEMOTL MRF5812 T-31-23 ELECTRICAL CHARACTERISTICS continued (Tc = 25C unless otherwise noted.) | Characteristic | symbot [| min | tye | Max | Unt | DYNAMIC CHARACTERISTICS " Collector Base Capacitance Cop ~ 1.2 2 pF (Vee = 10 Vde, ig = 0, f = 1 MHz) Current-Gain Bandwidth Product (1) fr _ $5 _ GHz (l = 75 mAde, Vcg = 10 Vde, f = 1 GHz) FUNCTIONAL TESTS Noise Figure (Minimum) NFEMIN - 2 od dB (lg = 50 mAde, Veg = 10 Vde, f = 0.5 GHz} Figure 4 Noise Figure (50 Ohm Insertion) NFs0 9 _ 25 3 dB {l = 80 mAdc, Vcg = 10 Vdc, f = 0.5 GHz) Figure 6 Power Gain Associated with Noise Figure (Saal? 13 15.8 - dB (l = 50 mAdc, Veg = 10 Vdc, f = 0.5 GHz) Figure 5 Maximum Unilateral Gain (1) Gumax - 7 - 68 (ig = 75 mAdc, Voge = 10 Vde, f = 0.5 GHz) Intermodulation Distortion (2) Figure 1 IMO(d3) _- -65 _ aB (Vee = 10 V, ic = 75 mA, Vout = +50 dmv) Notes: (1) Ch ized on HPBE4Z Automatic Network Analyzer. Gumex = 1 15/2) (1 [Sza/2) {2) 2 Tones, ft = 497 Mitz, f2 = 503 Mitz, 3rd Order Single Tone Reference. *HP115908 BIAS = **MICROLAB FXR NETWORK SP-TIN FOR f < 1 GHz SF-J1N FOR f > 1 GHz pur st AF INPUT, C, CAPACITANCE (pF) C, CAPACITANCE (pF) Veg, EMITTER-BASE VOLTAGE (VOLTS) Voly. COLLECTOR-BASE (VOLTS} Figure 2. Cy, input Capacitance versus Voitage Figure 3. Cop, Cop Collector-Base Capacitance versus Voltage en MOTOROLA RF DEVICE DATA 2-1038 MOTOROLA SC (XSTRS/R F) 2 _ > Veg = 10 Vde = 50 mA 1 Gyyp. GAIN ASSOCIATED WITH NOISE FIGURE (48) f, FREQUENCY (GHz) 4BE D MM 6367254 0095061 7 BEMOTE MRF5812 NOXSE FIGURE (08) Gn. GAIN ASSOCIATED WITH NOISE FIGURE (48) T-31-23 fs=PTL=0 % = 00 CKT FIGURE 1 W/O SLUG TUNERS NF50 0 NOISE FIGURE (d6) f = 500 MHz $ 3 Veg = 10Vde 1? CE = 1 Ic, COLLECTOR CURRENT (mA) Figure 4. Noise Figure and Gain Associated with Noise Figure 5. Noise Figure and Gain Associated with Noise Figure versus Frequency Saq|2 i= Rate ~ Bali f, FREQUENCY (Gitz) Figure 6. Gumax Maximum Unilateral Gain, [S2ql@ versus Frequency fr, GAIN-BANDWIDTH PRODUCT (Giz) Ic, COLLECTOR CURRENT (mA) Figure 8. Gain-Bandwidth Product versus Collector Figure versus Collector Current Fl (K+ Vk2-1), Kat Gamax = GAIN (08) Vee = 10 ic = mA , FREQUENCY (GHz) Figure 7. Gamax, Maximum Available Gain versus Frequency + 50 + Pin, INPUT POWER (dBm) Figure 9. 2nd and 3rd Order intercept Points and 1 d& Compression Point a MOTOROLA RF DEVICE DATA 2-1039 MOTOROLA SC CXSTRS/R FD WLE D MM 6367254 00950be 9 MEMOTL MRF5812 1-31-23 vi , t 8 3; St2 S22 vol) |i wut [onl | ze | ol | co | al | co | @al | co 5 | @ 100 0.68 123 18.3 118 0.04 a3 0.53 -79 300 0.68 ~ 167 7 92 0.06 0.31 ~120 500 0.65 178 43 at 0.08 62 0.28 -13 1000 0.62 184 22 83 0.13 61 0.28 -141 2000 0.87 109 13 39 0.28 5? 0.31 148 3000 0.55 68 1 23 0.41 41 0.34 -164 60 100 0.64 -133 20.2 114 0.04 051 -33 300 0.65 -171 78 a1 0.06 50 0.34 ~137 500 0.65 175 46 a1 0.08 58 0.31 -148 1000 0.63 182 23 63 0.13 6 0.28 -149 2000 0.56 109 1.3 39 0.28 7 0.3 -150 3000 0.52 70 1 23 0.41 39 0.29 -169 75 100 0.64 -137 20.8 113 0.04 44 05 ~99 300 0.66 -173 77 91 0.06 52 0.35 142 500 0.64 174 47 82 0.08 59 0.32 -154 1000 0.61 181 24 6 0.14 64 0.3 164 2000 0.54 107 14 42 0.3 55 0.27 -167 3000 0.52 69 1.1 24 0.42 37 0.28 172 100 100 0.64 -140 20.8 12 0.03 4 0.5 -103 300 0.65 174 76 0.06 53 0.36 ~145 600 0.64 173 47 81 0.08 60 0.33 156 1000 0.61 151 24 85 0.15 64 0.31 ~168 2000 0.54 107 14 42 03 54 0.27 - 169 3000 0.62 65 1.1 24 0.42 37 0.25 -174 10 25 100 0.65 112 20.2 121 0.04 46 0.66 ~62 300 0.63 162 8 93 0.05 4% 0.29 -93 500 0.62 -178 5 82 0.07 52 0.26 -102 1000 0.8 187 28 63 0.11 63 0.28 -112 2000 0.56 112 1.4 39 0.28 61 0.35 -125 3000 0.85 69 1 23 0.39 47 0.4 -145 50 100 0.63 122 22.9 117 0.03 46 0s 74 300 0.62 - 167 88 92 0.05 51 0.28 -112 500 0.8 178 53 82 0.07 58 0.24 ~122 1000 0.58 184 27 64 0.12 68 0.23 ~129 2000 0.81 111 18 40 0.26 59 0.28 -132 3000 0.6 70 1.2 24 0.39 44 0.34 144 76 100 0.63 126 23.8 116 0.03 45 0.49 390 300 0.63 - 168 9 92 0.05 51 0.28 ~120 500 0.62 177 5.5 82 0.07 58 0.24 ~130 1000 0.58 154 28 65 0.12 65 0.23 -137 2000 0.52 M1 18 41 0.26 58 0.27 ~136 3000 05 70 12 24 0.39 42 0.32 ~146 100 100 0.62 128 23.8 114 0.03 46 0.48 -82 300 0.62 -169 89 91 0.05 54 0.26 120 500 0.8 176 5.4 81 0.07 61 0.23 -130 1000 0.87 152 28 64 0.12 66 0.21 -136 2000 0.51 109 18 40 0.27 89 0.26 ~134 3000 0.6 68 1.2 24 0.39 43 0.32 ~145 18 25 100 0.68 106 21 123 0.03 47 0.57 54 300 0.63 - 189 85 94 0.05 46 0.3 -77 500 0.61 -177 5.2 &2 0.08 52 0.26 -84 1000 0.58 156 26 62 0.11 64 0.28 -96 2000 0.54 110 14 36 0.23 63 0.39 ~118 3000 0.56 68 1 22 0.37 49 0.46 ~137 50 100 0.62 114 24 119 0.03 48 0.51 ~64 300 06 -163 9.2 93 0.05 51 0.26 92 600 0.68 -179 5.7 81 0.07 58 0.22 -100 1000 0.56 154 29 63 0.12 66 0.23 -109 2000 0.52 109 15 338 0.25 60 0.32 -118 3000 0.62 67 14 22 0.37 46 0.39 -137 75 100 0.62 -118 24.6 117 0.03 46 0.48 67 300 0.89 ~188 24 92 0.05 53 0.24 -96 500 0.58 179 5.7 81 0.07 60 0.21 ~104 | 1000 0.68 154 29 0.12 68 0.22 -111 | 2000 0.5 109 18 33 0.25 60 6.31 -118 3000 0.62 67 1.1 22 0.37 46 0.38 -136 100 100 0.62 -121 248 116 0.03 48 0.48 68 300 06 - 185 9.3 91 0.05 53 0.23 -98 $00 0.58 179 5.7 81 0.07 61 0.2 -102 1000 0.56 188 29 63 0.12 65 0.22 -109 2000 05 11 18 39 0.25 62 0.32 117 3000 06 68 11 23 0.37 47 0.39 136 Figure 10. Common Emitter S-Parameters MOTOROLA RF DEVICE DATA 2-1040