2SB1234 / 2SD1851 Ordering number : EN2553B SANYO Semiconductors DATA SHEET 2SB1234 / 2SD1851 PNP / NPN Epitaxial Planar Silicon Transistors Driver Applications Features * * * * AF amplifier, solenoid drivers, LED drivers. Darlington connection. High DC current gain. Ultrasmall-sized package permitting sets to be made smaller and slimer. Specifications ( ) : 2SB1234 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)80 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)10 V IC (--)200 mA ICP PC (--)400 mA 200 mW Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Tj Storage Temperature Tstg 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO hFE1 hFE2 DC Current Gain Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Conditions VCB=(--)60V, IE=0A VEB=(--)8V, IC=0A VCE=(--)2V, IC=(--)10mA VCE=(--)2V, IC=(--)100mA IC=(--)100mA, IB=(--)100A IC=(--)100mA, IB=(--)100A IC=(--)10A, IE=0A IC=(--)1mA, RBE= IE=(--)10A, IC=0A Ratings min typ max Unit (--)100 nA (--)100 nA 5000 (3000)4000 (--)0.9 (--)1.5 V (--)1.5 (--)2.0 V (--)80 V (--)50 V (--)10 V Marking 2SB1234: PL 2SD1851: XY Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82506HA MS IM TC-00000087 / D1003TN (KT) / 92098HA (KT) / D138MO / 4167TA, TS No.2553-1/4 2SB1234 / 2SD1851 Package Dimensions unit : mm (typ) 7013A-009 0.5 2.9 0.1 1 2 0.4 1 : Base 2 : Emitter 3 : Collector SANYO : CP 0.3 1.1 0.95 0.05 0.5 2.5 1.5 3 Electrical Connection Collector Collector Base Base Emitter IC -- VCE --4A --60 --3A --2A --40 --1A --20 20 1A IB=0A 1 2 3 4 5 IC -- VBE 240 2SD1851 VCE=2V --25C 25C --40 Collector Current, IC -- mA 200 Ta=7 5C Collector Current, IC -- mA 2A 2SB1234 VCE= --2V --80 0 40 Collector-to-Emitter Voltage, VCE -- V ITR09424 IC -- VBE --160 --0.6 3A 0 0 --200 --120 4A 60 160 120 --25C --240 IB=0A --1 --2 --3 --4 --5 Collector-to-Emitter Voltage, VCE -- V ITR09423 80 25C 0 2SD1851 5A --5A 0 IC -- VCE A 6 2SB1234 Ta=7 5C --80 2SD1851 100 --7A --6A Collector Current, IC -- mA --100 Collector Current, IC -- mA Emitter 2SB1234 80 40 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 Base-to-Emitter Voltage, VBE -- V ITR09425 0 0.6 0.8 1.0 1.2 1.4 Base-to-Emitter Voltage, VBE -- V 1.6 1.8 ITR09426 No.2553-2/4 2SB1234 / 2SD1851 hFE -- IC 100000 2SB1234 VCE= --2V 7 5 25C DC Current Gain, hFE DC Current Gain, hFE Ta=75C 2 --25C 10000 5 25C --25C 7 5 3 2 2 1000 2 --1.0 3 5 7 2 3 5 7 --100 2 3 --10 Collector Current, IC -- mA ITR09427 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 --1.0 Ta= --25C 7 25C 3 5 75C 7 2 10 3 5 7 100 2 3 ITR09428 VCE(sat) -- IC 10 2SB1234 IC / IB=1000 7 2 1.0 Collector Current, IC -- mA VCE(sat) -- IC --10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Ta=75C 2 3 7 2SD1851 IC / IB=1000 7 5 3 2 Ta= --25C 1.0 7 75C 25C 5 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 Ta= --25C 75C 25C --1.0 2 7 3 5 7 100 Collector Current, IC -- mA 2 3 ITR09430 VBE(sat) -- IC 10 2SB1234 IC / IB=1000 7 10 ITR09429 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 10000 7 1000 2SD1851 IC / IB=1000 7 5 3 2 Ta= --25C 75C 25C 1.0 7 5 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 ITR09431 PC -- Ta 240 Collector Dissipation, PC -- mW 2SD1851 VCE=2V 7 5 3 hFE -- IC 100000 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 ITR09432 2SB1234 / 2SD1851 200 160 120 80 40 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 ITR09433 No.2553-3/4 2SB1234 / 2SD1851 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice. PS No.2553-4/4