2SB1234 / 2SD1851
No.2553-1/4
Features
•AF amplifier, solenoid drivers, LED drivers.
•Darlington connection.
•High DC current gain.
•Ultrasmall-sized package permitting sets to be made smaller and slimer.
Specifications ( ) : 2SB1234
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)80 V
Collector-to-Emitter Voltage VCEO (--)50 V
Emitter-to-Base Voltage VEBO (--)10 V
Collector Current IC(--)200 mA
Collector Current (Pulse) ICP (--)400 mA
Collector Dissipation PC200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)60V, IE=0A (--)100 nA
Emitter Cutoff Current IEBO VEB=(--)8V, IC=0A (--)100 nA
DC Current Gain hFE1V
CE=(--)2V, IC=(--)10mA 5000
hFE2V
CE=(--)2V, IC=(--)100mA
(3000)4000
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)100mA, IB=(--)100µA (--)0.9 (--)1.5 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)100mA, IB=(--)100µA (--)1.5 (--)2.0 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10µA, IE=0A (--)80 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞(--)50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0A (--)10 V
Marking 2SB1234: PL
2SD1851: XY
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN2553B
82506HA MS IM TC-00000087 / D1003TN (KT) / 92098HA (KT) / D138MO / 4167TA, TS
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SB1234 / 2SD1851
PNP / NPN Epitaxial Planar Silicon Transistors
Driver Applications
2SB1234 / 2SD1851
No.2553-2/4
Package Dimensions
unit : mm (typ)
7013A-009
Electrical Connection
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
12
3
1.5
2.5
1.1
0.3
0.05
2.9
0.95 0.4
0.1
0.5
0.5
IC -- VCE IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
IC -- VBE
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
ITR09426
0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
40
80
120
160
200
240
Ta=75
°C
25
°
C
--25
°
C
ITR09425
--
0.6
--
0.8
--
1.0
--
1.2
--
1.4
--
1.6
--
1.8
0
--
40
--
80
--
120
--
160
--
200
--
240
Ta=75
°C
25
°
C
--25
°
C
ITR09423
0
--
1
--
2
--
3
--
4
--
5
0
--
20
--
40
--
60
--
80
--
100
IB=0
µA
ITR09424
012345
0
20
40
60
80
100
IB=0
µA
2SB1234 2SD1851
2SB1234
VCE= --2V 2SD1851
VCE=2V
--
7µA
--
6µA
--
4µA
--
3µA
6µA
4µA
2µA
--
5µA
--
2µA
--
1µA
5µA
3µA
1µA
Base
Collector
Emitter 2SB1234
Base
Collector
Emitter 2SD1851
2SB1234 / 2SD1851
No.2553-3/4
--
10
--
100
2375723
7
--
1.0
--
10
5
7
5
3
2
ITR09431
25°
C
75
°C
10 100
2375723
7
1.0
10
5
7
5
3
2
ITR09432
25
°C
75
°C
ITR09433
0 20 40 60 80 100 120 140 160
0
40
80
120
160
200
240
Ta= --25
°C
2SB1234
IC / IB=1000
Ta= --25
°C
2SD1851
IC / IB=1000
2SB1234 / 2SD1851
--
10
--
100
2375723
7
--
10
--
1.0
5
7
5
3
2
ITR09429
Ta= --25
°C
25°
C
75°
C
10 100
2375723
7
10
1.0
5
7
5
3
2
ITR09430
25°
C
75
°C
2SB1234
IC / IB=1000
Ta= --25
°C
2SD1851
IC / IB=1000
ITR09427
--
1.0 23 5 23 35
--
10
--
100
7772
7
100000
10000
1000
3
2
5
7
3
2
5
Ta=75
°C
25°
C
--25
°C
ITR09428
1.0 23 5 23 35
10 100
7772
7
100000
10000
1000
3
2
5
7
3
2
5
Ta=75
°C
25°
C
--25
°C
2SD1851
VCE=2V
2SB1234
VCE= --2V
hFE -- IChFE -- IC
Collector Current, IC -- mA
DC Current Gain, hFE
Collector Current, IC -- mA
DC Current Gain, hFE
VCE(sat) -- IC
VCE(sat) -- IC
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
PC -- Ta
Ambient Temperature, Ta -- °C
Collector Dissipation, PC -- mW
VBE(sat) -- ICVBE(sat) -- IC
Collector Current, IC -- mA Collector Current, IC -- mA
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SB1234 / 2SD1851
No.2553-4/4
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
PS
This catalog provides information as of August, 2006. Specifications and information herein are subject
to change without notice.
