SEMITRANSTM 3
Superfast NPT-IGBT
Modules
SKM 150GB063D
Features
  
  
 
!   ! !
 ""
   #$ %
 % &  "  '
& &%% % ()'
*+ ,   %% 
-+ ,    
($ ! ) ) )
 %
. / % 0 )1 ""
"  # 
2) 2 ) "
$ ! " "
  3-  "
 " 4+ 
Typical Applications
!  %  
!" " ! 
5
1) 0 0 "0
 %6  #0 3+
78
9" 0
Absolute Maximum Ratings : 4* ;)  ! %"
Symbol Conditions Values Units
IGBT
()' <++ (
): 4* >+ ;) 4++ 3*+ 1
)?@ : 3  -++ 1
(' A4+ (
0B  C'?1C D  E+ &&& F3*+ 34* ;)
( 1) 3 & 4*++ (
Inverse diode
.: 4* G+ ;) 3-+ H+ 1
.?@ : 3  -++ 1
.@ : 3+ I &I B: 3*+ ;) GG+ 1
Characteristics : 4* ;)  ! %"
Symbol Conditions min. typ. max. Units
IGBT
(' (' : ()' ): 3 1 E* ** <* (
)' (' : + ()' : ()' B: 4* 34* ;) +3* +E* 1
()'C B: 4* 34* ;) 3+* 3 (
)' (' : 3* ( B: 4* 34* ;) > G> J
()' ) : 3*+ 1 (' : 3* (  0 43 4E 4* 4G (
) " %! " GE .
) (' : + ()' : 4* ( % : 3 @8 3 .
) +< .
)' 4+ 
?))KF''K &  : 4* 34* ;) +-* +* J
" ()) : -++ ( ) : 3*+ 1 3-+ 
? : ?%% : 3+ J B: 34* ;) <* 
"%% (' : A 3* ( E*+ 
%E+ 
' '%% G* ** L
Inverse diode
(.: (') . : 3*+ 1I (' :+(IB: 4* 34*
;)
3** 3** 3H (
(C B: 34*  ;) +H (
B: 34*  ;) < G J
??@ . : 3*+ 1I B: 34* ;) *- 1
M "N" : 1NO G3 O)
' (' : ( L
Thermal characteristics
?B   +3G PN9
?B2  0 2" +* PN9
?  " ++-G PN9
Mechanical data
@ 7 @< - * 
@  @< 4* * 
! -4*
SKM 150GB063D
1 09-03-2006 RAA © by SEMIKRON
GB
SKM 150GB063D
2 09-03-2006 RAA © by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SKM 150GB063D
3 09-03-2006 RAA © by SEMIKRON
Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zthp(j-c) = f (tp);D=tp/tc= tp*f
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp);D=tp/tc= tp*f
Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current
SKM 150GB063D
4 09-03-2006 RAA © by SEMIKRON
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
File no. E 63 532 Dimensions in mm
) 2 *<
 ) 2 *<
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKM 150GB063D
5 09-03-2006 RAA © by SEMIKRON