Rev. 2.0 Page 1 2012-12-10
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Normal Level
Pin 1 Pin 2 Pin 3
GDS
Type
V
DS
I
D
R
DS(on)Package Pb-free
BUZ 31 H3046 200 V 14.5 A 0.2
Ω
PG-TO-262-3 Yes
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
C = 30 ˚C
I
D 14.5
A
Pulsed drain current
T
C = 25 ˚C
I
Dpuls 58
Avalanche current,limited by
T
jmax
I
AR 13.5
Avalanche energy,periodic limited by
T
jmax
E
AR 9 mJ
Avalanche energy, single pulse
I
D = 14.5 A,
V
DD = 50 V,
R
GS = 25
Ω
L
= 1.42 mH,
T
j = 25 ˚C
E
AS
200
Gate source voltage
V
GS
±
20 V
ESD-Sensitivity HBM as per MIL-STD 883 Class 1
Power dissipation
T
C = 25 ˚C
P
tot 95
W
Operating temperature
T
j -55 ... + 150 ˚C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip case
R
thJC
≤
1.32 K/W
Thermal resistance, chip to ambient
R
thJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
BUZ 31 H3046
. Halogen-free according to IEC61249-2-21
. Pb-free lead plating; RoHs compliant
Electrical Characteristics, at
T
j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = 0.25 mA,
T
j = 25 ˚C
V
(BR)DSS 200 --
V
Gate threshold voltage
V
GS=
V
DS,
I
D = 1 mA
V
GS(th) 2.1 3 4
Zero gate voltage drain current
V
DS = 200 V,
V
GS = 0 V,
T
j = 25 ˚C
V
DS = 200 V,
V
GS = 0 V,
T
j = 125 ˚C
I
DSS
-
-
10
0.1
100
1
µA
Gate-source leakage current
V
GS = 20 V,
V
DS = 0 V
I
GSS - 10 100
nA
Drain-Source on-resistance
V
GS = 5 V,
I
D = 9 A
R
DS(on) - 0.16 0.2
Ω
BUZ 31 H3046
Rev. 2.0 Page 2 2012-12-10
Electrical Characteristics, at
T
j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS
≥
2 *
I
D *
R
DS(on)max,
I
D = 7 A
g
fs 5 12 -
S
Input capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
iss - 840 1120
pF
Output capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
oss -180270
Reverse transfer capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
rss -95 150
Turn-on delay time
V
DD = 30 V,
V
GS = 5 V,
I
D = 3 A
R
GS = 50
Ω
t
d(on)
- 12 20
ns
Rise time
V
DD = 30 V,
V
GS = 5 V,
I
D = 3 A
R
GS = 50
Ω
t
r
-50 75
Turn-off delay time
V
DD = 30 V,
V
GS = 5 V,
I
D = 3 A
R
GS = 50
Ω
t
d(off)
-150 200
Fall time
V
DD = 30 V,
V
GS = 5 V,
I
D = 3 A
R
GS = 50
Ω
t
f
- 60 80
Rev. 2.0 Page 3 2012-12-10
BUZ 31 H3046
Electrical Characteristics, at
T
j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
C = 25 ˚C
I
S-- 14.5
A
Inverse diode direct current,pulsed
T
C = 25 ˚C
I
SM -- 58
Inverse diode forward voltage
V
GS = 0 V,
I
F = 29A
V
SD - 1.1 1.6
V
Reverse recovery time
V
R = 100 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
t
rr - 170-
ns
Reverse recovery charge
V
R = 100 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
Q
rr - 1.1-
µC
BUZ 31 H3046
Rev. 2.0 Page 4 2012-12-10
Power dissipation
P
tot =
ƒ
(
T
C)
020 40 60 80 100 120 ˚C 160
T
C
0
10
20
30
40
50
60
70
80
W
100
P
tot
Drain current
I
D =
ƒ
(
T
C)
parameter:
V
GS
≥
10 V
020 40 60 80 100 120 ˚C 160
T
C
0
1
2
3
4
5
6
7
8
9
10
11
12
A
14
I
D
Safe operating area
I
D =
ƒ
(
V
DS)
parameter:
D
= 0.01
, T
C = 25˚C
-1
10
0
10
1
10
2
10
A
I
D
10 0 10 1 10 2 V
V
DS
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
t
p = 15.0µs
Transient thermal impedance
Z
th JC =
ƒ
(
t
p)
parameter:
D = t
p /
T
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
BUZ 31 H3046
Rev. 2.0 Page 5 2012-12-10
Typ. output characteristics
I
D =
ƒ(
V
DS)
parameter:
t
p = 80 µs
0 2 4 6 8 10 V13
V
DS
0
4
8
12
16
20
24
A
32
I
D
V
GS [V]
a
a 4.0
b
b 4.5
c
c 5.0
d
d 5.5
ee 6.0
f
f 6.5
g
g 7.0
h
h 7.5
i
i 8.0
j
j 9.0
k
k 10.0
l
P
tot = 95W
l 20.0
Typ. drain-source on-resistance
R
DS (on) =
ƒ(
I
D)
parameter:
V
GS
0 4 8 12 16 20 A28
I
D
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
Ω
0.65
R
DS (on)
V
GS [V] =
a
4.0
V
GS [V] =
a
a
4.5
b
b
5.0
c
c
5.5
d
d
6.0
e
e
6.5
f
f
7.0
g
g
7.5
h
h
8.0
i
i
9.0
j
j
10.0
k
k
20.0
Typ. transfer characteristics
I
D
=
f
(
V
GS
)
parameter:
t
p = 80 µs
V
DS
≥
2 x
I
D x
R
DS(on)max
0 1 2 3 4 5 6 7 8 V 10
V
GS
0
2
4
6
8
10
12
A
16
I
D
Typ. forward transconductance
g
fs
=
f
(
I
D)
parameter:
t
p = 80 µs,
V
DS
≥
2 x
I
D
x R
DS(on)max
0 2 4 6 8 10 12 A16
I
D
0
1
2
3
4
5
6
7
8
9
10
11
S
13
g
fs
BUZ 31 H3046
Rev. 2.0 Page 6 2012-12-10
Gate threshold voltage
V
GS (th) =
ƒ
(
T
j)
parameter:
V
GS =
V
DS,
I
D = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
V
GS(th)
-60 -20 20 60 100 ˚C 160
T
j
2%
typ
98%
Drain-source on-resistance
R
DS (on) =
ƒ
(
T
j)
parameter:
I
D = 9 A,
V
GS = 10 V
-60 -20 20 60 100 ˚C 160
T
j
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
Ω
0.75
R
DS (on)
typ
98%
Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS = 0V,
f
= 1MHz
0 5 10 15 20 25 30 V40
V
DS
1
10
2
10
3
10
4
10
pF
C
C
rss
C
oss
C
iss
Forward characteristics of reverse diode
I
F =
ƒ
(
V
SD)
parameter:
T
j
, t
p = 80 µs
-1
10
0
10
1
10
2
10
A
I
F
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
V
SD
T
j = 25 ˚C typ
T
j = 25 ˚C (98%)
T
j = 150 ˚C typ
T
j = 150 ˚C (98%)
BUZ 31 H3046
Rev. 2.0 Page 7 2012-12-10
Avalanche energy
E
AS =
ƒ
(
T
j)
parameter:
I
D = 14.5 A,
V
DD = 50 V
R
GS = 25
Ω
,
L
= 1.42 mH
20 40 60 80 100 120 ˚C 160
T
j
0
20
40
60
80
100
120
140
160
180
mJ
220
E
AS
Typ. gate charge
V
GS =
ƒ
(
Q
Gate)
parameter:
I
D puls = 20 A
010 20 30 40 50 60 70 90
Q
Gate
0
2
4
6
8
10
12
V
16
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS =
ƒ
(
T
j)
-60 -20 20 60 100 ˚C 160
T
j
180
185
190
195
200
205
210
215
220
225
230
V
240
V
(BR)DSS
BUZ 31 H3046
Rev. 2.0 Page 8 2012-12-10
BUZ 31 H3046
Rev. 2.0 Page 9 2012-12-10
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Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
BUZ 31 H3046
Rev. 2.0 Page 10 2012-12-10
Mouser Electronics
Authorized Distributor
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