BGS13SN8 Wideband RF SP3T Switch Data Sheet Revision 2.2 - 2015-11-11 Final Power Management & Multimarket Edition 2015-11-11 Published by Infineon Technologies AG 81726 Munich, Germany c 2015 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGS13SN8 Confidential Revision History Document No.: BGS13SN8_Final_v2.2.pdf Revision History: Final Rev. v2.2 Previous Version: Final, Revision v2.1 - 2015-03-30 Page Subjects (major changes since last revision) 1 Status updated 5 Marking updated Trademarks of Infineon Technologies AG AURIXTM , C166TM , CanPAKTM , CIPOSTM , CIPURSETM , CoolGaNTM , CoolMOSTM , CoolSETTM , CoolSiCTM , CORECONTROLTM , CROSSAVETM , DAVETM , DI-POLTM , DrBLADETM , EasyPIMTM , EconoBRIDGETM , EconoDUALTM , EconoPACKTM , EconoPIMTM , EiceDRIVERTM , eupecTM , FCOSTM , HITFETTM , HybridPACKTM , ISOFACETM , IsoPACKTM , i-WaferTM , MIPAQTM , ModSTACKTM , my-dTM , NovalithICTM , OmniTuneTM , OPTIGATM , OptiMOSTM , ORIGATM , POWERCODETM , PRIMARIONTM , PrimePACKTM , PrimeSTACKTM , PROFETTM , PRO-SILTM , RASICTM , REAL3TM , ReverSaveTM , SatRICTM , SIEGETTM , SIPMOSTM , SmartLEWISTM , SOLID FLASHTM , SPOCTM , TEMPFETTM , thinQ!TM , TRENCHSTOPTM , TriCoreTM . Other Trademarks Advance Design SystemTM (ADS) of Agilent Technologies, AMBATM , ARMTM , MULTI-ICETM , KEILTM , PRIMECELLTM , REALVIEWTM , THUMBTM , VisionTM of ARM Limited, UK. ANSITM of American National Standards Institute. AUTOSARTM of AUTOSAR development partnership. BluetoothTM of Bluetooth SIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM , FirstGPSTM of Trimble Navigation Ltd. EMVTM of EMVCo, LLC (Visa Holdings Inc.). EPCOSTM of Epcos AG. FLEXGOTM of Microsoft Corporation. HYPERTERMINALTM of Hilgraeve Incorporated. MCSTM of Intel Corp. IECTM of Commission Electrotechnique Internationale. IrDATM of Infrared Data Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks, Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM , NUCLEUSTM of Mentor Graphics Corporation. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO., MICROWAVE OFFICETM (MWO) of Applied Wave Research Inc., OmniVisionTM of OmniVision Technologies, Inc. OpenwaveTM of Openwave Systems Inc. RED HATTM of Red Hat, Inc. RFMDTM of RF Micro Devices, Inc. SIRIUSTM of Sirius Satellite Radio Inc. SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYO YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM , PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of Texas Instruments Incorporated. VXWORKSTM , WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex. Last Trademarks Update 2014-07-17 Data Sheet 3 Revision 2.2 - 2015-11-11 BGS13SN8 Confidential Contents Contents 1 Features 5 2 Product Description 5 3 Maximum Ratings 6 4 Operation Ranges 7 5 RF Characteristics 8 6 GPIO Specification 9 7 Pin Definition and Package Outline 9 List of Figures 1 2 3 4 5 BGS13SN8 Block Diagram . . . . . . . Package Outline (bottom and side view) Marking Pattern . . . . . . . . . . . . . . Land pattern and stencil mask . . . . . Packing (Tape) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 10 10 11 11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 6 7 7 7 8 9 9 9 List of Tables 1 2 3 4 5 6 7 8 9 Ordering Information . . . . Maximum Ratings, Table I . Maximum Ratings, Table II . Operation Ranges . . . . . RF Input Power . . . . . . . RF Characteristics . . . . . GPIO Truth Table . . . . . . Pin Configuration . . . . . . Mechanical Data . . . . . . Data Sheet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Revision 2.2 - 2015-11-11 BGS13SN8 Confidential BGS13SN8 Wideband RF SP3T Switch 1 Features * 3 high-linearity TRx paths with power handling capability of up to 30 dBm * High switching speed, ideal for WLAN and Bluetooth applications * Low insertion loss * Low harmonic generation * High port-to-port-isolation * Suitable for Edge / CDMA2000 / LTE / WCDMA applications * 0.1 to 6 GHz coverage * No decoupling capacitors required if no DC applied on RF lines * On-chip control logic including ESD protection * General Purpose Input-Output (GPIO) Interface * Small form factor 1.1 mm x 1.1 mm * No power supply blocking required * High EMI robustness * RoHS and WEEE compliant package 2 Product Description The BGS13SN8 RF MOS switch is specifically designed for WLAN and Bluetooth applications. Any of the 3 ports can be used as termination of the diversity antenna handling up to 30 dBm. This SP3T offers low insertion loss and high robustness against interferer signals at the antenna port and low harmonic generation in termination mode. The on-chip controller integrates CMOS logic and level shifters, driven by control inputs from 1.35 V to VDD . The BGS13SN8 RF Switch is manufactured in Infineon's patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.1 mm2 and a maximum height of 0.4 mm. No decoupling capacitors are required in typical applications as long as no DC is applied to any RF port. Table 1: Ordering Information Type Package Marking BGS13SN8 TSNP-8-1 R Data Sheet 5 Revision 2.2 - 2015-11-11 BGS13SN8 Confidential Figure 1: BGS13SN8 Block Diagram 3 Maximum Ratings Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Table 2: Maximum Ratings, Table I at TA = 25 C, unless otherwise specified Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Frequency Range f 0.1 - 6 GHz 1) Supply voltage VDD -0.5 - 3.6 V - Storage temperature range TSTG -55 - 150 C - C - Junction temperature Tj - - 125 RF input power at all Rx ports PRF_Rx - - 32 dBm CW 2) VESD_CDM -1000 - +1000 V All pins 3) ESD capability, HBM VESD_HBM -1000 - +1000 V Digital versus RF interface -1000 - +1000 V RF interface ESD capability, system level4) VESD_ANT -8000 - +8000 V ANT versus system GND, ESD capability, CDM with 27 nH shunt inductor 1) There is also a DC connection between switched paths. The DC voltage at RF ports VRFDC has to be 0V. 2) Field-Induced Charged-Device Model JESD22-C101. Simulates charging/discharging events that occur in production equipment and processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing. 3) Human Body Model ANSI/ESDA/JEDEC JS-001-2012 (R=1.5 k, C=100 pF). 4) IEC 61000-4-2 (R=330 , C=150 pF), contact discharge. Data Sheet 6 Revision 2.2 - 2015-11-11 BGS13SN8 Confidential Table 3: Maximum Ratings, Table II at TA = 25 C, unless otherwise specified Parameter Symbol Maximum DC-voltage on RF- VRFDC Values Min. Typ. Max. 0 - 0 Unit Note / Test Condition V No DC voltages allowed on Ports and RF-Ground RF-Ports 4 Operation Ranges Table 4: Operation Ranges Parameter Symbol Values Unit Note / Test Condition 3.4 V - 80 - A - 1.35 - VBAT V - VCtrl_L -0.3 - 0.45 V - CCtrl - - 2 pF Guaranteed by design TA -40 25 85 - Min. Typ. Max. VDD 1.8 - Supply current IBAT - GPIO control voltage high VCtrl_H GPIO control voltage low GPIO control input capaci- Supply voltage 1) + 0.3 tance Ambient temperature 1) T A= -40 C - 85 C, C VDD= 1.8 - 3.4 V Table 5: RF Input Power Parameter Rx ports (50 ) Data Sheet Symbol PRF_Rx Values Min. Typ. Max. - - 30 7 Unit Note / Test Condition dBm - Revision 2.2 - 2015-11-11 BGS13SN8 Confidential 5 RF Characteristics Table 6: RF Characteristics at TA = -40 C-85 C, PIN = 0 dBm, Supply Voltage VDD= 1.8 V-3.4 V, unless otherwise specified Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. 0.15 0.22 0.42 dB 698-960 MHz 0.18 0.25 0.45 dB 1428-1990 MHz 0.18 0.28 0.63 dB 1920-2170 MHz 0.20 0.33 0.63 dB 2170-2690 MHz 0.30 0.65 1.10 dB 5150-5725 MHz 20 30 40 dB 698-960 MHz 19 23 38 dB 1428-1990 MHz 17 21 35 dB 1920-2170 MHz 15 19 32 dB 2170-2690 MHz 12 14 28 dB 5150-5725 MHz 30 35 48 dB 698-960 MHz 22 30 38 dB 1428-1990 MHz 18 18 27 25 38 35 dB dB 1920-2170 MHz 2170-2690 MHz 10 15 30 dB 5150-5725 MHz 34 - - dBm 824-960 MHz - -90 -75 dBc 23 dBm, 50 , CW mode -95 -80 dBc 23 dBm, 50 , CW mode Insertion Loss (TA = 25 C) All Rx Ports IL Return Loss All Rx Ports RL Isolation All Rx Ports ISO P0.1 dB Compression Point, Extrapolated All Rx Ports 1) P0.1dB Harmonic Generation up to 12.75 GHz H2 PHarm H3 PHarm Intermodulation Distortion in Rx Band - 2) (TA = 25 C) IMD2, low IMD2low - - -105 dBm IMD3 IMD3 - - -115 dBm IMD2, high IMD2high - - -105 dBm RF Rise Time 3) ton/off - 90 150 ns Ctrl to RF Time 3) tCtrl-RF - 500 1000 ns Tx = 10 dBm, Interferer = -15 dBm, 50 Switching Time 90 % OFF to 90 % ON; 90 % ON to 90 % OFF 50 % of Ctrl Signal to 90 % of RF Signal 1) Guaranteed by design. application board with shunt inductor, Min/Max-values measured with phase shifter. 3) Guaranteed by characterization. 2) On Data Sheet 8 Revision 2.2 - 2015-11-11 BGS13SN8 Confidential 6 GPIO Specification Table 7: Modes of Operation (Truth Table) Control Inputs State Mode V1 V2 1 Isolation 0 0 2 RFin - RF1 1 0 3 RFin - RF2 0 1 4 RFin - RF3 1 1 7 Pin Definition and Package Outline Table 8: Pin Configuration No Name 1 VDD 2 V2 3 V1 4 RF3 5 RF1 6 RFin 7 RF2 8 DGND Pin Type PWR I I I/O I/O I/O I/O GND Buffer Type Function Power Supply Control Pin 2 Control Pin 1 RF-Port 3 RF-Port 1 RF Input RF-Port 2 Digital Ground Table 9: Mechanical Data Parameter Symbol Value Unit X-Dimension X 1.1 0.05 mm Y-Dimension Y 1.1 0.05 mm Size Size 1.21 mm2 Height H 0.375 mm Data Sheet 9 Revision 2.2 - 2015-11-11 BGS13SN8 Confidential Figure 2: Package Outline (bottom and side view) Figure 3: Marking Pattern Data Sheet 10 Revision 2.2 - 2015-11-11 BGS13SN8 Confidential Figure 4: Land pattern and stencil mask Figure 5: Packing (Tape) Data Sheet 11 Revision 2.2 - 2015-11-11 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG