BGS13SN8
Wideband RF SP3T Switch
Data Sheet
Revision 2.2 - 2015-11-11
Final
Power Management & Multimarket
Edition 2015-11-11
Published by Infineon Technologies AG
81726 Munich, Germany
c
2015 Infineon Technologies AG
All Rights Reserved.
LEGAL DISCLAIMER
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used
in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support device or system or to affect the
safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in
the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
BGS13SN8
Confidential
Revision History
Document No.: BGS13SN8_Final_v2.2.pdf
Revision History: Final Rev. v2.2
Previous Version: Final, Revision v2.1 - 2015-03-30
Page Subjects (major changes since last revision)
1 Status updated
5 Marking updated
Trademarks of Infineon Technologies AG
AURIXTM, C166TM, CanPAKTM, CIPOSTM, CIPURSETM, CoolGaNTM , CoolMOSTM, CoolSETTM, CoolSiCTM, CORECONTROLTM,
CROSSAVETM, DAVETM, DI-POLTM, DrBLADETM, EasyPIMTM , EconoBRIDGETM, EconoDUALTM, EconoPACKTM, EconoPIMTM,
EiceDRIVERTM, eupecTM, FCOSTM, HITFETTM, HybridPACKTM, ISOFACETM, IsoPACKTM, i-WaferTM, MIPAQTM, ModSTACKTM,
my-dTM, NovalithICTM, OmniTuneTM, OPTIGATM, OptiMOSTM, ORIGATM, POWERCODETM, PRIMARIONTM, PrimePACKTM,
PrimeSTACKTM, PROFETTM, PRO-SILTM, RASICTM, REAL3TM, ReverSaveTM, SatRICTM, SIEGETTM, SIPMOSTM, SmartLEWISTM,
SOLID FLASHTM, SPOCTM, TEMPFETTM, thinQ!TM, TRENCHSTOPTM, TriCoreTM.
Other Trademarks
Advance Design SystemTM (ADS) of Agilent Technologies, AMBATM, ARMTM, MULTI-ICETM, KEILTM, PRIMECELLTM,
REALVIEWTM, THUMBTM,µVisionTM of ARM Limited, UK. ANSITM of American National Standards Institute. AUTOSARTM
of AUTOSAR development partnership. BluetoothTM of Bluetooth SIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM, FirstGPSTM
of Trimble Navigation Ltd. EMVTM of EMVCo, LLC (Visa Holdings Inc.). EPCOSTM of Epcos AG. FLEXGOTM of Microsoft
Corporation. HYPERTERMINALTM of Hilgraeve Incorporated. MCSTM of Intel Corp. IECTM of Commission Electrotechnique
Internationale. IrDATM of Infrared Data Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARD-
IZATION. MATLABTM of MathWorks, Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM, NUCLEUSTM of Mentor
Graphics Corporation. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANU-
FACTURING CO., MICROWAVE OFFICETM (MWO) of Applied Wave Research Inc., OmniVisionTM of OmniVision Technologies,
Inc. OpenwaveTM of Openwave Systems Inc. RED HATTM of Red Hat, Inc. RFMDTM of RF Micro Devices, Inc. SIRIUSTM of
Sirius Satellite Radio Inc. SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian
Software Limited. TAIYO YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of
TOKO KABUSHIKI KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM, PALLADIUMTM of Cadence Design Systems,
Inc. VLYNQTM of Texas Instruments Incorporated. VXWORKSTM, WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of
Diodes Zetex.
Last Trademarks Update 2014-07-17
Data Sheet 3 Revision 2.2 - 2015-11-11
BGS13SN8
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Contents
1 Features 5
2 Product Description 5
3 Maximum Ratings 6
4 Operation Ranges 7
5 RF Characteristics 8
6 GPIO Specification 9
7 Pin Definition and Package Outline 9
List of Figures
1 BGS13SN8BlockDiagram .......................................... 6
2 Package Outline (bottom and side view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3 MarkingPattern................................................. 10
4 Landpatternandstencilmask ........................................ 11
5 Packing(Tape) ................................................. 11
List of Tables
1 OrderingInformation.............................................. 5
2 MaximumRatings,TableI........................................... 6
3 MaximumRatings,TableII........................................... 7
4 OperationRanges ............................................... 7
5 RFInputPower................................................. 7
6 RFCharacteristics ............................................... 8
7 GPIOTruthTable................................................ 9
8 PinConfiguration................................................ 9
9 MechanicalData ................................................ 9
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BGS13SN8 Wideband RF SP3T Switch
1 Features
•3 high-linearity TRx paths with power handling capability of up to
30 dBm
•High switching speed, ideal for WLAN and Bluetooth applications
•Low insertion loss
•Low harmonic generation
•High port-to-port-isolation
•Suitable for Edge / CDMA2000 / LTE / WCDMA applications
•0.1 to 6 GHz coverage
•No decoupling capacitors required if no DC applied on RF lines
•On-chip control logic including ESD protection
•General Purpose Input-Output (GPIO) Interface
•Small form factor 1.1 mm x 1.1 mm
•No power supply blocking required
•High EMI robustness
•RoHS and WEEE compliant package
2 Product Description
The BGS13SN8 RF MOS switch is specifically designed for WLAN and Bluetooth applications. Any of the 3 ports
can be used as termination of the diversity antenna handling up to 30 dBm.
This SP3T offers low insertion loss and high robustness against interferer signals at the antenna port and low
harmonic generation in termination mode. The on-chip controller integrates CMOS logic and level shifters, driven
by control inputs from 1.35 V to VDD . The BGS13SN8 RF Switch is manufactured in Infineon’s patented MOS
technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the
inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.1 mm2and a maximum height of
0.4 mm.
No decoupling capacitors are required in typical applications as long as no DC is applied to any RF port.
Table 1: Ordering Information
Type Package Marking
BGS13SN8 TSNP-8-1 R
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Figure 1: BGS13SN8 Block Diagram
3 Maximum Ratings
Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings;
exceeding only one of these values may cause irreversible damage to the integrated circuit.
Table 2: Maximum Ratings, Table I at TA= 25 ◦C, unless otherwise specified
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Frequency Range f 0.1 – 6 GHz 1)
Supply voltage VDD -0.5 – 3.6 V –
Storage temperature range TSTG -55 – 150 ◦C –
Junction temperature Tj– – 125 ◦C –
RF input power at all Rx ports PRF_Rx – – 32 dBm CW
ESD capability, CDM2) VESD_CDM -1000 – +1000 V All pins
ESD capability, HBM3) VESD_HBM -1000 – +1000 V Digital versus RF interface
-1000 – +1000 V RF interface
ESD capability, system level4) VESD_ANT -8000 – +8000 V ANT versus system GND,
with 27 nH shunt inductor
1)There is also a DC connection between switched paths. The DC voltage at RF ports VRFDC has to be 0V.
2)Field-Induced Charged-Device Model JESD22-C101. Simulates charging/discharging events that occur in production equipment and
processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing.
3)Human Body Model ANSI/ESDA/JEDEC JS-001-2012 (R=1.5 kΩ, C=100 pF).
4)IEC 61000-4-2 (R=330 Ω, C=150 pF), contact discharge.
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Table 3: Maximum Ratings, Table II at TA= 25 ◦C, unless otherwise specified
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum DC-voltage on RF-
Ports and RF-Ground
VRFDC 0 – 0 V No DC voltages allowed on
RF-Ports
4 Operation Ranges
Table 4: Operation Ranges
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Supply voltage VDD 1.8 – 3.4 V –
Supply current1) IBAT – 80 – µA –
GPIO control voltage high VCtrl_H 1.35 – VBAT
+ 0.3
V –
GPIO control voltage low VCtrl_L -0.3 – 0.45 V –
GPIO control input capaci-
tance
CCtrl – – 2 pF Guaranteed by design
Ambient temperature TA-40 25 85 ◦C –
1)TA= −40 ◦C - 85 ◦C, VDD= 1.8 - 3.4 V
Table 5: RF Input Power
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Rx ports (50 Ω) PRF_Rx – – 30 dBm –
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5 RF Characteristics
Table 6: RF Characteristics at TA= −40 ◦C–85 ◦C, PIN = 0 dBm, Supply Voltage VDD= 1.8 V–3.4 V, unless
otherwise specified
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Insertion Loss (TA= 25 ◦C)
All Rx Ports IL
0.15 0.22 0.42 dB 698–960 MHz
0.18 0.25 0.45 dB 1428–1990 MHz
0.18 0.28 0.63 dB 1920–2170 MHz
0.20 0.33 0.63 dB 2170–2690 MHz
0.30 0.65 1.10 dB 5150–5725 MHz
Return Loss
All Rx Ports RL
20 30 40 dB 698–960 MHz
19 23 38 dB 1428–1990 MHz
17 21 35 dB 1920–2170 MHz
15 19 32 dB 2170–2690 MHz
12 14 28 dB 5150–5725 MHz
Isolation
All Rx Ports ISO
30 35 48 dB 698–960 MHz
22 30 38 dB 1428–1990 MHz
18 27 38 dB 1920–2170 MHz
18 25 35 dB 2170–2690 MHz
10 15 30 dB 5150–5725 MHz
P0.1 dB Compression Point, Extrapolated
All Rx Ports 1) P0.1dB 34 – – dBm 824–960 MHz
Harmonic Generation up to 12.75 GHz
H2 PHarm – -90 -75 dBc 23 dBm, 50 Ω, CW mode
H3 PHarm – -95 -80 dBc 23 dBm, 50 Ω, CW mode
Intermodulation Distortion in Rx Band 2) (TA= 25 ◦C)
IMD2, low IMD2low – – -105 dBm Tx = 10 dBm,
Interferer = −15 dBm, 50 Ω
IMD3 IMD3 – – -115 dBm
IMD2, high IMD2high – – -105 dBm
Switching Time
RF Rise Time 3) ton/off – 90 150 ns 90 % OFF to 90 % ON;
90 % ON to 90 % OFF
Ctrl to RF Time 3) tCtrl-RF – 500 1000 ns 50 % of Ctrl Signal to
90 % of RF Signal
1)Guaranteed by design.
2)On application board with shunt inductor, Min/Max-values measured with phase shifter.
3)Guaranteed by characterization.
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6 GPIO Specification
Table 7: Modes of Operation (Truth Table)
Control Inputs
State Mode V1 V2
1 Isolation 0 0
2 RFin - RF1 1 0
3 RFin - RF2 0 1
4 RFin - RF3 1 1
7 Pin Definition and Package Outline
Table 8: Pin Configuration
No Name Pin Type Buffer Type Function
1 VDD PWR Power Supply
2 V2 I Control Pin 2
3 V1 I Control Pin 1
4 RF3 I/O RF-Port 3
5 RF1 I/O RF-Port 1
6 RFin I/O RF Input
7 RF2 I/O RF-Port 2
8 DGND GND Digital Ground
Table 9: Mechanical Data
Parameter Symbol Value Unit
X-Dimension X 1.1 ±0.05 mm
Y-Dimension Y 1.1 ±0.05 mm
Size Size 1.21 mm2
Height H 0.375 mm
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Figure 2: Package Outline (bottom and side view)
Figure 3: Marking Pattern
Data Sheet 10 Revision 2.2 - 2015-11-11
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Figure 4: Land pattern and stencil mask
Figure 5: Packing (Tape)
Data Sheet 11 Revision 2.2 - 2015-11-11
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
