JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
D882 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
P
CM : 1.25 W（Tamb=25℃）
Collector current
ICM : 3 A
Collector-base voltage
V(BR)CBO : 40 V
Operating and storage junction temperature range
T
J，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=100μA ，IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10 mA , I
B=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 100 μA，IC=0 6 V
Collector cut-off current ICBO VCB=40 V , IE=0 1 μA
Collector cut-off current ICEO VCE=30 V , IB=0 10 μA
Emitter cut-off current IEBO VEB=6V , IC=0 1 μA
hFE（1） VCE= 2V, IC= 1A 60 400
DC current gain hFE（2） VCE=2V, IC= 100mA 32
Collector-emitter saturation voltage VCE(sat) IC=2A, IB= 0.2A 0.5 V
Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.2A 1.5 V
Transition frequency f T VCE=5 V, I
C=0.1mA
f = 10MHz 50 MHz
CLASSIFICATION OF hFE(1)
Rank
R O Y GR
Range
60-120 100-200 160-320 200-400
1 2 3
TO—126
1. EMITTER
2.COLLECTOR
3.BASE
D
C
A
A1
b
b1
E
P
L
L1
e
e1
TO-126 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
b1
c
D
E
e
e1
L
L1
P
φ
Min
2.500
1.100
0.660
1.170
0.450
7.400
10.600
4.480
15.300
2.100
3.900
3.000
Max
2.900
1.500
0.860
1.370
0.600
7.800
11.000
4.680
15.700
2.300
4.100
3.200
Min
0.098
0.043
0.026
0.046
0.018
0.291
0.417
0.176
0.602
0.083
0.154
0.118
Max
0.114
0.059
0.034
0.054
0.024
0.307
0.433
0.184
0.618
0.091
0.161
0.126
Dimensions In Millimeters Dimensions In Inches
0.090TYP
2.290TYP
φ
