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1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surfa ce -M o unte d De vice (SMD) plas tic package.
NPN complement: PBHV8215Z.
1.2 Features
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
Medium power SMD plastic package
1.3 Applications
LED driver for LED chain module
LCD backlighting
Automotive motor management
Switch Mode Power Supply (SMPS)
1.4 Quick reference data
[1] Pulse test: tp≤300 μs; δ≤0.02.
PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
Rev. 01 — 11 December 2009 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - −150 V
ICcollector current - - −2A
hFE DC current gain VCE =−10 V;
IC=−100 mA [1] 100 180 -
PBHV9215Z_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 December 2009 2 of 12
NXP Semiconductors PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1base
2 collector
3emitter
4 collector 132
4
sym028
2, 4
3
1
Table 3. Ordering information
Type number Package
Name Description Version
PBHV9215Z SC-73 plastic surface-mounted package with increased
heatsink; 4 leads SOT223
Table 4. Marking codes
Type number Marking code
PBHV9215Z V9215Z
PBHV9215Z_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 December 2009 3 of 12
NXP Semiconductors PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, sing le-sided copper, tin-plated and mounting pad for collector 6 cm2.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - −200 V
VCEO collector-emitter voltage open base - −150 V
VEBO emitter-base voltage open collector - −6V
ICcollector current - −2A
ICM peak collector current single pulse;
tp≤1ms -−4A
IBM peak base current single pulse;
tp≤1ms -−500 mA
Ptot total power dissipation Tamb ≤25 °C[1] -0.73W
[2] -1.45W
Tjjunction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
Tamb (°C)
−75 17512525 75−25
006aab764
1.0
0.5
1.5
2.0
Ptot
(W)
0.0
(2)
(1)
PBHV9215Z_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 December 2009 4 of 12
NXP Semiconductors PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, sing le-sided copper, tin-plated and mounting pad for collector 6 cm2.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 170 K/W
[2] --85K/W
Rth(j-sp) thermal resistance from
junction to solder point --15K/W
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junctio n to ambient as a func tion of pulse duration; typical values
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junctio n to ambient as a func tion of pulse duration; typical values
006aab765
10
1
102
103
Zth(j-a)
(K/W)
10−1
10−51010−2
10−4102
10−1
tp (s)
10−3103
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
006aab766
10
1
102
103
Zth(j-a)
(K/W)
10−1
10−51010−2
10−4102
10−1
tp (s)
10−3103
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
PBHV9215Z_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 December 2009 5 of 12
NXP Semiconductors PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
7. Characteristics
[1] Pulse test: tp≤300 μs; δ≤0.02.
Table 7. Characteristics
Tamb =25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector -base cut-off
current VCB =−120 V; IE=0A - - −100 nA
VCB =−120 V; IE=0A;
Tj= 150 °C--−10 μA
ICES collector-emitter cut-off
current VCE =−120 V; VBE =0V - - −100 nA
IEBO emitter-base cut-off
current VEB =−4V; I
C=0A - - −100 nA
hFE DC curren t ga i n V CE =−10 V
IC=−100 mA [1] 100 180 -
IC=−1A [1] 80 155 -
IC=−1.5 A [1] 70 140 -
IC=−2A [1] 60 120 -
VCEsat collector-emitter
saturation voltage IC=−100 mA;
IB=−20 mA [1] -−25 −50 mV
IC=−1A; I
B=−200 mA [1] -−110 −190 mV
IC=−1.5 A; IB=−300 mA [1] -−155 −270 mV
IC=−2A; I
B=−400 mA [1] -−200 −350 mV
RCEsat collector-emitter
saturation resistance IC=−2A; I
B=−400 mA [1] - 100 175 mΩ
VBEsat base-emitter saturation
voltage IC=−2A; I
B=−400 mA [1] -−1.0 −1.15 V
tddelay time VCC =−6V; I
C=−0.5 A;
IBon =−0.1 A; IBoff =0.1A -20-ns
trrise time - 105 - ns
ton turn-on time - 125 - ns
tsstorage time - 875 - ns
tffall time - 150 - ns
toff turn-off time - 1025 - ns
fTtransition frequency VCE =−10 V;
IE=−10 mA; f = 100 MHz -35-MHz
Cccollector capacitance VCB =−20 V; IE=i
e=0A;
f=1MHz -30-pF
Ceemitter capacitance VEB =−0.5 V;
IC=i
c=0A; f=1MHz - 530 - pF
PBHV9215Z_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 December 2009 6 of 12
NXP Semiconductors PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
VCE =−10 V
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Tamb =25°C
Fig 4. DC current gain as a function of collector
current; typical values Fig 5. Collector current as a fun ction of
collector-emitter voltage; typical values
VCE =−10 V
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
IC/IB=5
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
Fig 6. Base-emitter voltage as a function of collector
current; typical values Fig 7. Base-emitter saturation voltage as a function
of collector current; typical val ue s
006aab855
100
200
300
hFE
0
IC (mA)
−10−1−104
−103
−1−102
−10
(2)
(1)
(3)
VCE (V)
0−5−4−2−3−1
006aab856
−1.6
−2.4
−0.8
−3.2
−4.0
IC
(A)
0
IB (mA) = −360
−324
−36
−144
−252
−72
−288
−180
−216
−108
006aab857
−0.4
−0.8
−1.2
VBE
(V)
0
IC (mA)
−10−1−104
−103
−1−102
−10
(2)
(1)
(3)
006aab858
−0.5
−0.9
−1.3
VBEsat
(V)
−0.1
IC (mA)
−10−1−104
−103
−1−102
−10
(2)
(1)
(3)
PBHV9215Z_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 December 2009 7 of 12
NXP Semiconductors PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
IC/IB=5
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Tamb =25°C
(1) IC/IB=20
(2) IC/IB=10
(3) IC/IB=5
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values Fig 9. Collector-emitter sa turation voltage as a
function of collector current; typical values
IC/IB=5
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Tamb =25°C
(1) IC/IB=20
(2) IC/IB=10
(3) IC/IB=5
Fig 10. Collec t or-emitter saturation resistance as a
function of collector current; typical values Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
006aab859
IC (mA)
−10−1−104
−103
−1−102
−10
−10−1
−1
VCEsat
(V)
−10−2
(2)
(1) (3)
006aab860
IC (mA)
−10−1−104
−103
−1−102
−10
−10−1
−1
VCEsat
(V)
−10−2
(2)
(1)
(3)
IC (mA)
−10−1−104
−103
−1−102
−10
006aab861
1
10−1
102
10
103
RCEsat
(Ω)
10−2
(2)
(1)
(3)
IC (mA)
−10−1−104
−103
−1−102
−10
006aab862
1
10−1
102
10
103
RCEsat
(Ω)
10−2
(2)
(1)
(3)
PBHV9215Z_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 December 2009 8 of 12
NXP Semiconductors PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in auto motive applications.
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 12. Test circuit for switch in g times
RC
R2
R1
DUT
mgd624
Vo
RB
(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
VBB
VI
VCC
Fig 13. Package outline SOT223 (SC-73)
04-11-10Dimensions in mm
6.7
6.3
3.1
2.9
1.8
1.5
7.3
6.7
3.7
3.3
1.1
0.7
132
4
4.6
2.3 0.8
0.6
0.32
0.22
Table 8. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
1000 4000
PBHV9215Z SOT223 8 mm pitch, 12 mm tape and reel -115 -135
PBHV9215Z_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 December 2009 9 of 12
NXP Semiconductors PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
11. Soldering
Fig 14. Reflow soldering footprint SOT223 (SC-73)
Fig 15. Wave soldering footprint SOT223 (SC-73)
sot223_
fr
1.2
(4×)
1.2
(3×)
1.3
(4×)
1.3
(3×)
6.15
7
3.85
3.6
3.5
0.3
3.9 7.65
2.3 2.3
6.1
4
231
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
sot223_
fw
1.9
6.7
8.9
8.7
1.9
(3×)
1.9
(2×)
1.1
6.2
2.7 2.7
2
4
31
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
PBHV9215Z_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 December 2009 10 of 12
NXP Semiconductors PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PBHV9215Z_1 20091211 Product data sheet - -
PBHV9215Z_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 December 2009 11 of 12
NXP Semiconductors PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warrant ies as to t he accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short dat a sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
13.3 Disclaimers
General — In formation in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give an y represent ations or
warranties, expressed or impli ed, as to the accuracy or completeness of such
information and shall have no liability for th e co nsequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and with out
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for il lustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ra tings System of IEC 60134) may cause permane nt
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other co nditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may af fect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between inf ormation in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Not hing in this document may be interpret ed or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patent s or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All refe renced brands, produc t names, service names and trademarks
are the property of their respective ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 December 2009
Document identifier: PBHV9215Z_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
