UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION FEATURES *Suitable for automatic insertion in thick and thin-film circuits. *Complement to BC856 ... BC860 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise noted) PARAMETER SYMBOL Collector-Base Voltage BC846 BC847 / BC850 BC848 / BC849 Collector-Emitter Voltage BC846 BC847 / BC850 BC848 / BC849 Emitter-Base Voltage BC846 / BC847 BC848 / BC849 / BC850 Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature VALUE UNIT 80 50 30 V V V 65 45 30 V V 6 5 100 310 150 -65 ~ +150 V V mA mW C C VCBO VCEO VEBO Ic Pc Tj Tstg ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise noted) PARAMETER Collector Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage UTC SYMBOL ICBO hFE VCE(sat) TEST CONDITIONS VCB=30V, IE=0 VCE=5.0V, Ic=2.0mA Ic=10mA,IB=0.5mA Ic=100mA,IB=5.0mA UNISONIC TECHNOLOGIES MIN TYP MAX UNITS nA 90 200 15 800 250 600 110 CO. LTD mV mV 1 QW-R206-027,A UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL Collector-Base Saturation Voltage VBE(sat) Base-Emitter On Voltage VBE(on) Current Gain Bandwidth Product Output Capacitance Input Capacitance Noise Figure: BC846/BC847/BC848 BC849/BC850 BC849 BC850 fT Cob Cib NF TEST CONDITIONS Ic=10mA,IB=0.5mA Ic=100mA,IB=5.0mA VCE=5.0V,Ic=2.0mA VCE=5.0V,Ic=10mA VCE=5.0V,Ic=10mA f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=5V, Ic=200A, f=1KHz, RG=2K VCE=5V, IC=200A, RG=2K, f=30~15000Hz MIN TYP 580 700 900 660 MAX UNITS mV mV mV mV MHz 700 720 300 3.5 9 6 pF pF 2 1.2 1.4 1.4 10 4 4 3 dB dB dB dB Classification of hFE RANK RANGE A 110-220 B 200-450 C 420-800 Marking Code P/N BC846 BC847 BC848 BC849 BC850 UTC RANK A A A A A MARK 8AA 8BA 8CA 8DA 8EA RANK B B B B B MARK 8AB 8BB 8CB 8DB 8EB UNISONIC TECHNOLOGIES RANK C C C C C MARK 8AC 8BC 8CC 8DC 8EC CO. LTD 2 QW-R206-027,A UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R206-027,A UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R206-027,A